FGH40N60SMDF-F085

IGBT - Field Stop 600 V, 40 A FGH40N60SMDF-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • • • • • • • • • Max Junction Temperature TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 40 A High Input Impedance Fast Switching : EOFF = 6.25 uJ/A Tighten Parameter Distribution Qualified to Automotive Requirements of AEC−Q101 This Device is Pb−Free and is RoHS Compliant www.onsemi.com VCES IC 600 V 40 A C G E1 E C G Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40N60 SMDF $Y &Z &3 &K FGH40N60SMDF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2020 − Rev. 3 1 Publication Order Number: FGH40N60SMDF−F085/D FGH40N60SMDF−F085 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ±20 V TC = 25°C 80 A TC = 100°C 40 A Pulsed Collector Current TC = 25°C 120 A Maximum Power Dissipation TC = 25°C 349 W TC = 100°C 174 W Operating Junction Temperature −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C IC Description Collector Current ICM (Note 1) PD TJ TSTG TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Unit RqJC (IGBT) Thermal Resistance, Junction to Case 0.43 _C/W RqJC (Diode) Thermal Resistance, Junction to Case 1.45 _C/W 40 _C/W RqJA Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Qty per Tube FGH40N60SMDF−F085 FGH40N60SMDF TO−247 Tube N/A N/A 30 www.onsemi.com 2 FGH40N60SMDF−F085 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGE = 0 V, IC = 250 mA 600 − − V VGE = 0 V, IC = 250 mA − 0.6 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA 3.5 4.8 6.0 V ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, − 1.7 2.5 V IC = 40 A, VGE = 15 V, TC = 150°C − 2.0 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 1840 − pF − 180 − pF − 50 − pF − 18 − ns − 22 − ns Turn−Off Delay Time − 110 − ns Fall Time − 11 20 ns Eon Turn−On Switching Loss − 1.3 − mJ Eoff Turn−Off Switching Loss − 0.25 − mJ Ets Total Switching Loss − 1.55 − mJ Td(on) Turn−On Delay Time − 18 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Turn−On Delay Time Rise Time VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 125°C − 32 − ns Turn−Off Delay Time − 112 − ns Fall Time − 11 20 ns Eon Turn−On Switching Loss − 2.05 − mJ Eoff Turn−Off Switching Loss − 0.48 − mJ Ets Total Switching Loss − 2.53 − mJ Qg Total Gate Charge − 122 − nC Qge Gate to Emitter Charge − 11 − nC Qgc Gate to Collector Charge − 59 − nC Td(off) Tf Rise Time VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 25°C VCE = 400 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40N60SMDF−F085 ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Trr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Test Conditions IF = 20 A IF = 20 A, dIF/dt = 200 A/ms Diode Reverse Recovery Charge Min Typ Max Unit TC = 25°C − 1.3 1.7 V TC = 150°C − 1.2 − TC = 25°C − 57 90 TC = 125°C − 130 − TC = 25°C − 164 290 TC = 125°C − 718 − ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH40N60SMDF−F085 TYPICAL PERFORMANCE CHARACTERISTICS TC = 25°C 120 20V 12V 90 10V VGE = 8V 60 30 0 0.0 1.5 TC = 125°C 15V Collector Current, IC (A) Collector Current, IC (A) 120 3.0 4.5 90 15V 12V 10V 30 0 0.0 6.0 3.0 4.5 6.0 Figure 2. Typical Output Characteristics 80 120 Common Emitter VGE = 15 V TC = 25°C TC = 125°C 90 Collector Current, IC (A) Collector Current, IC (A) 1.5 Collector−Emitter Voltage, VCE (V) Figure 1. Typical Output Characteristics 60 30 Common Emitter VCE = 20 V TC = 25°C TC = 125°C 60 40 20 0 0 1 2 3 4 0 Collector−Emitter Voltage, VCE (V) 4 6 Collector−Emitter Voltage, VCE (V) 20 Common Emitter VGE = 15 V 80A 2.5 2.0 40A IC = 20A 1.5 50 75 100 125 8 10 12 Figure 4. Transfer Characteristics 3.0 1.0 25 2 Gate−Emitter Voltage,VGE (V) Figure 3. Typical Saturation Voltage Characteristics Collector−Emitter Voltage, VCE (V) VGE = 8V 60 Collector−Emitter Voltage, VCE (V) 0 20V Common Emitter TC = −40°C 16 12 8 IC = 20A 0 150 80A 40A 4 0 4 8 12 16 20 Gate−Emitter Voltage, VGE (V) Collector−Emitter Case Temperature Voltage, TC (5C) Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH40N60SMDF−F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Common Emitter TC = 25°C 16 12 8 80A 4 40A 0 20 Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) 20 16 12 8 4 8 12 16 40A 80A 4 IC = 20A IC = 20A 0 Common Emitter TC = 125°C 0 20 0 Gate−Emitter Voltage, VCE (V) Cies 15 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 2000 Coes 1000 11 0 VCC = 100V 200V 300V 6 3 0 30 0 30 60 90 120 Gate Charge, Qg(nC) Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics 400 100 tr 100 ms 10 10 ms Switching Time (ns) 100 Collector Current, IC (A) 20 Common Emitter TC = 25°C 9 Collector−Emitter Voltage, VCE (V) 1ms 10 ms DC 1 *Notes: Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 16 12 Cres 0 12 Figure 8. Saturation Voltage vs VGE Gate−Emitter Voltage, VGE (V) Capacitance (pF) 3000 8 Gate−Emitter Voltage, VGE(V) Figure 7. Saturation Voltage vs VGE 4000 4 1 10 100 td(on) 10 Common Emitter VCC = 400 V VGE = 15 V IC = 40 A TC = 25°C TC = 125°C 1 1000 0 Collector−Emitter Voltage, VCE (V) 10 20 30 40 Gate Resistance, RG (W) Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics vs. Gate Resistance www.onsemi.com 6 50 FGH40N60SMDF−F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 100 tf Common Emitter VCC = 400 V VGE = 15 V IC = 40 A TC = 25°C TC = 125°C 10 1 1000 td(off) Switching Time (ns) Switching Time (ns) 1000 0 10 20 30 40 Common Emitter VGE = 15 V, RG = 6 W TC = 25°C TC = 125°C 100 tr td(on) 10 1 20 50 30 Gate Resistance, RG (W) 40 50 60 70 80 Collector Current, IC (A) Figure 14. Turn−on Characteristics vs. Collector Current Figure 13. Turn−off Characteristics vs. Gate Resistance 1000 5 Eon Switching Loss (mJ) Switching Time (ns) td(off) 100 tf 10 Common Emitter VGE = 15 V, RG = 6 W TC = 25°C TC = 125°C 1 20 40 60 1 0.1 80 Eoff Common Emitter VCC = 400 V VGE = 15 V IC = 40 A TC = 25°C TC = 125°C 0 Collector Current, IC (A) 40 50 50 100 Eon Eoff 30 40 200 Common Emitter VGE = 15 V, RG = 6 W TC = 25°C TC = 125°C 1 0.1 20 30 Figure 16. Switching Loss vs. Gate Resistance Collector Current, IC (A) Switching Loss (mJ) 10 20 Gate Resistance, RG (W) Figure 15. Turn−off Characteristics vs. Collector Current 20 10 60 70 10 Safe Operating Area VGE = 15 V, TC = 125°C 1 80 Collector Current, IC (A) 1 10 100 1000 Collector−Emitter Voltage, VCE (V) Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics www.onsemi.com 7 FGH40N60SMDF−F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 100 Reverse Current, IR (uA) Forward Current, IF (A) 100 o TJ = 125 C 10 o TJ = 25 C o 1 TJ = 75 C TC = 25°C TC = 125°C TC = 75°C 0.1 0.0 0.5 1.0 1.5 2.0 o TJ = 125 C 10 o TJ = 75 C 1 0.1 o TJ = 25 C 0.01 50 2.5 150 Forward Voltage, VF (V) 450 600 Figure 20. Reverse Current 200 Reverse Recovery Time, trr (ns) 80 200A/ms 150 100 di/dt = 100A/ ms 50 5 10 15 20 25 30 35 di/dt = 100A/ ms 60 200A/ms 40 20 40 5 10 Forward Current, IF (A) 15 20 25 0.5 0.2 0.1 PDM 0.05 0.01 1E−5 35 Figure 22. Reverse Recovery Time 1 0.1 30 Forward Current, IF (A) Figure 21. Stored Charge Thermal Response (Zthjc) Stored Recovery Charge, Qrr (nC) Figure 19. Forward Characteristics 0 300 Reverse Voltage, VR (V) t1 0.02 0.01 single pulse 1E−4 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + T C 1E−3 0.01 0.1 Rectangular Pulse Duration (s) 1 Figure 23. Transient Thermal Impedance of IGBT www.onsemi.com 8 10 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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