FGH40N60SMD-F085

IGBT - Field Stop 600 V, 40 A FGH40N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. www.onsemi.com Features • • • • • • • • C Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A High Input Impedance Tightened Parameter Distribution AEC Qualified and PPAP Capable IGBT: AEC−Q101 This Device is Pb−Free and is RoHS Compliant G E E C G Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, SMPS, PFC, UPS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit Collector to Emitter Voltage Rating VCES 600 V Gate to Emitter Voltage VGES ±20 V Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current ICM (Note 1) Diode Forward Current @ TC = 25°C @ TC = 100°C IF Pulsed Diode Maximum Forward Current IFM (Note 1) 80 40 120 $Y&Z&3&K FGH40N60 SMD A A 40 20 120 A PD Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL 300 °C W 349 174 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. February, 2020 − Rev. 4 MARKING DIAGRAM A Maximum Power Dissipation @ TC = 25°C @ TC = 100°C © Semiconductor Components Industries, LLC, 2013 TO−247−3LD CASE 340CK 1 $Y &Z &3 &K FGH40N60SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FGH40N60SMD−F085/D FGH40N60SMD−F085 THERMAL CHARACTERISTICS Symbol Ratings Unit Thermal Resistance Junction−to−Case, for IGBT Parameter RJC (Note 2) 0.43 °C/W Thermal Resistance Junction−to−Case, for Diode RJC 1.8 °C/W Symbol Typ. RJA 45 Parameter Thermal Resistance Junction−to−Ambient (PCB Mount) (Note 2) °C/W 2. RJC for TO−247: according to Mil standard 883−1012 test method. RJA for TO−247 : according to JESD51−2, test method environmental condition and JESD51−10, test boards for through hole perimeter leaded package thermal measurements. JESD51−3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Package Type Quantity FGH40N60SMD FGH40N60SMD−F085 TO−247−3 Tube 30 Units ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A − 0.6 − V/°C ICES VCE = VCES, VGE = 0 V − − 250 A ICES at 80% * BVCES, 175°C − − 800 IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 3.5 4.5 6.0 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.9 2.5 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 1880 2500 pF Collector Cut−Off Current G−E Leakage Current ON CHARACTERISTICs DYNAMIC CHARACTERISTICS Input Capacitance Cies Output Capacitance Coes − 180 240 pF Reverse Transfer Capacitance Cres − 50 65 pF − 18 24 ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time td(on) − 28 36.4 ns td(off) − 110 143 ns tf − 13.2 18.5 ns Turn−On Switching Loss Eon − 0.92 1.2 mJ Turn−Off Switching Loss Eoff − 0.3 0.39 mJ Total Switching Loss Ets − 1.22 1.59 mJ Turn−On Delay Time td(on) − 16.7 23.8 ns Turn−Off Delay Time Fall Time Rise Time tr VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 25°C − 27 35.1 ns td(off) − 116 151 ns tf − 56.5 81 ns Turn−On Switching Loss Eon − 1.47 1.91 mJ Turn−Off Switching Loss Eoff − 0.73 0.95 mJ Total Switching Loss Ets − 2.20 2.86 mJ Turn−Off Delay Time Fall Time tr VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 175°C www.onsemi.com 2 FGH40N60SMD−F085 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Test Conditions Min Typ Max Unit Total Gate Charge Parameter Qg VCE = 400 V, IC = 40 A, VGE = 15 V − 119 180 nC Gate to Emitter Charge Qge − 13 20 nC Gate to Collector Charge Qgc − 58 90 nC Min Typ Max Unit TC = 25°C − 2.3 2.8 V TC = 175°C − 1.67 − TC = 175°C − 48.9 − J TC = 25°C − 36 47 ns TC = 175°C − 110 − TC = 25°C − 46.8 61 TC = 175°C − 470 − ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parametr Diode Forward Voltage Reverse Recovery Energy Symbol VFM Erec Diode Reverse Recovery Time trr Diode Reverse Recovery Charge Qrr Test Conditions IF = 20 A IF = 20 A, diF/dt = 200 A/s nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40N60SMD−F085 TYPICAL CHARACTERISTICS VGE = 20 V 100 120 12 V 10 V 15 V Collector Current, IC [A] Collector Current, IC [A] 120 80 60 40 8V 20 VGE = 20 V 15 V 100 12 V 80 60 8V 40 20 TC = 175°C TC = 25°C 0 0 4 6 8 2 Collector−Emitter Voltage, VCE [V] 0 0 10 100 100 Collector Current, IC [A] 120 Collector Current, IC [A] 120 80 60 40 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 20 4 1 2 3 Collector−Emitter Voltage, VCE [V] 0 4 6 8 10 2 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics Figure 1. Typical Output Characteristics 0 Common Emitter VCE = 20 V TC = 25°C TC = 175°C 80 60 40 20 0 5 0 Figure 3. Typical Saturation Voltage Characteristics Common Emitter VGE = 15 V 20 80 A 2 40 A IC = 20 A 1 25 50 75 2 4 6 8 10 Gate−Emitter Voltage, VGE [V] 100 125 150 12 Figure 4. Transfer Characteristics Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 3 10 V 16 80 A 12 Collector−Emitter Case Temperature, TC [°C] 40 A 8 IC = 20 A 4 0 175 Common Emitter TC = −40°C 4 16 8 12 Gate−Emitter Voltage, VGE [V] 20 Figure 6. Saturation Voltage vs. VGE Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 FGH40N60SMD−F085 TYPICAL CHARACTERISTICS 20 Common Emitter TC = 25°C 16 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 20 80 A 12 40 A 8 IC = 20 A 4 0 4 14 80 A 12 40 A 8 4 0 20 8 12 16 Gate−Emitter Voltage, VGE [V] Common Emitter TC = 175°C IC = 20 A 4 4000 15 Gate−Emitter Voltage, VGE [V] Capacitance [pF] Cies 1000 Coes Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 100 1 10 Collector−Emitter Voltage, VCE [V] 400 V 300 V 6 3 Common Emitter TC = 25°C 100 50 Gate Charge, Qg [nC] 120 tr Switching Time [ns] 10 s 100 s 10 ms 1 ms DC 0.1 1 9 100 100 1 VCC = 200 V Figure 10. Gate Charge Characteristics 300 10 12 0 0 30 Figure 9. Capacitance Characteristics Collector Current, IC [A] 20 Figure 8. Saturation Voltage vs. VGE Figure 7. Saturation Voltage vs. VGE 50 8 12 16 Gate−Emitter Voltage, VGE [V] *Notes: 1. TC = 25°C 2. TJ ≤ 175°C 3. Single Pulse 10 100 Collector−Emitter Voltage, VCE [V] td(on) 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 1 1000 0 10 30 40 20 Gate Resistance, RG [] 50 Figure 12. Turn−on Characteristics vs. Gate Resistance Figure 11. SOA Characteristics www.onsemi.com 5 FGH40N60SMD−F085 TYPICAL CHARACTERISTICS 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 1000 100 10 tr Switching Time [ns] Switching Time [ns] 10000 td(off) tf 0 10 20 30 40 Gate Resistance, RG [] td(on) 10 Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C 1 20 50 1000 100 td(off) Switching Loss [mJ] Switching Time [ns] 80 Figure 14. Turn−on Characteristics vs. Collector Current Figure 13. Turn−off Characteristics vs. Gate Resistance 100 tf 10 Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C 1 20 40 60 Collector Current, IC [A] Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 175°C 10 Eon 1 Eoff 0.1 80 0 Figure 15. Turn−off Characteristics vs. Collector Current 100 Eon 1 Eoff 0.1 20 50 200 Collector Current, IC [A] Common Emitter VGE = 15 V, RG = 6  TC = 25°C TC = 175°C 10 20 30 40 Gate Resistance, RG [] Figure 16. Switching Loss vs. Gate Resistance 10 Switching Loss [mJ] 40 60 Collector Current, IC [A] 10 Safe Operating Area VGE = 15 V, TC ≤ 175°C 40 60 Collector Current, IC [A] 1 80 Figure 17. Switching Loss vs. Collector Current 1 Collector−Emitter Voltage, VCE [V] Figure 18. Turn−off Switching SOA Characteristics www.onsemi.com 6 FGH40N60SMD−F085 TYPICAL CHARACTERISTICS 120 110 90 60 50 40 30 20 90 80 60 TC = 100°C 50 40 30 20 10 0 1k 0 25 50 75 100 125 150 175 Collector−Emitter Case Temperature, TC [°C] Reverse Current ICES [A] TC = 175°C 10 TC = 25°C 0 1 2 Forward Voltage, VF [V] TC = 175°C 100 10 TC = 100°C 1 0.1 TC = 25°C 0.01 0 3 200 400 600 Collector to Emitter Voltage, VCES [V] Figure 22. Reverse Current Figure 21. Forward Characteristics 200 TC = 25°C TC = 175°C 500 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 600 400 300 di/dt = 200 A/s 200 di/dt = 100 A/s 100 0 1M 1000 100 1 10k 100k Switching Frequency, f [Hz] Figure 20. Load Current vs. Frequency Figure 19. Current Derating Forward Current, IF [A] TC = 75°C 70 10 0 Square Wave TJ ≤ 175°C, D = 0.5, VCE = 400 V VGE = 15/0 V, RG = 6  100 70 Collector Current, IC [A] Collector Current, IC [A] 80 0 5 10 15 20 25 30 35 Forward Current, IF [A] 40 TC = 25°C TC = 175°C di/dt = 100 A/s 150 200 A/s 100 50 0 45 di/dt = 100 A/s 200 A/s 0 5 10 15 20 25 30 35 Forward Current, IF [A] 40 Figure 24. Reverse Recovery Time Figure 23. Stored Charge www.onsemi.com 7 45 FGH40N60SMD−F085 Thermal Response [Zjc] 0.5 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse 1E−3 1E−5 PDM t1 t2 Duty Factor, D = t1/t2 Peak TJ = Pdm x Zjc + TC 1E−4 1E−3 0.01 Rectangular Pulse Duration [sec] 0.1 Figure 25. Transient Thermal Impedance of IGBT Thermal Response [Zjc] 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak TJ = Pdm x Zjc + TC single pulse 0.01 1E−5 1E−4 1E−3 0.01 Rectangular Pulse Duration [sec] 0.1 Figure 26. Transient Thermal Impedance of Diode www.onsemi.com 8 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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