FGH60N60SFTU

IGBT - Field Stop 600 V, 60 A FGH60N60SF Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 60 A High Input Impedance Fast Switching This Device is Pb−Free and is RoHS Compliant www.onsemi.com VCES IC 600 V 60 A C G Applications • Solar Inverter, UPS, Welder, PFC E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SF $Y &Z &3 &K FGH60N60SF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 February, 2020 − Rev. 2 1 Publication Order Number: FGH60N60SF/D FGH60N60SF ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ±20 V Transient Gate−to−Emitter Voltage ±30 V TC = 25°C 120 A TC = 100°C 60 A Pulsed Collector Current TC = 25°C 180 A Maximum Power Dissipation TC = 25°C 378 W TC = 100°C 151 W Operating Junction Temperature −55 to +150 °C Storage Temperature Range −55 to +150 °C 300 °C IC ICM (Note 1) PD TJ TSTG TL Description Collector Current Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive test: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol RqJC (IGBT) RqJA Parameter Value Max. Unit Thermal Resistance, Junction to Case − 0.33 _C/W Thermal Resistance, Junction to Ambient − 40 _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH60N60SFTU FGH60N60SF TO−247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 mA 600 − − V VGE = 0 V, IC = 250 mA − 0.4 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA 4.0 5.0 6.5 V ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, − 2.3 2.9 V IC = 60 A, VGE = 15 V, TC = 125°C − 2.5 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 2820 − pF − 350 − pF − 140 − pF DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance www.onsemi.com 2 FGH60N60SF ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit − 22 − ns − 42 − ns Turn−Off Delay Time − 134 − ns Fall Time − 31 62 ns Eon Turn−On Switching Loss − 1.79 − mJ Eoff Turn−Off Switching Loss − 0.67 − mJ Ets Total Switching Loss − 2.46 − mJ Td(on) Turn−On Delay Time − 22 − ns SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Turn−On Delay Time Rise Time VCC = 400 V, IC = 60 A, RG = 5 W, VGE = 15 V, Inductive Load, TC = 125°C − 44 − ns Turn−Off Delay Time − 144 − ns Fall Time − 43 − ns Eon Turn−On Switching Loss − 1.88 − mJ Eoff Turn−Off Switching Loss − 1.0 − mJ Ets Total Switching Loss − 2.88 − mJ Qg Total Gate Charge − 198 − nC Qge Gate to Emitter Charge − 22 − nC Qgc Gate to Collector Charge − 106 − nC Td(off) Tf Rise Time VCC = 400 V, IC = 60 A, RG = 5 W, VGE = 15 V, Inductive Load, TC = 25°C VCE = 400 V, IC = 60 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH60N60SF TYPICAL PERFORMANCE CHARACTERISTICS 180 o TC = 25 C 20V 15V 150 Collector Current, IC (A) Collector Current, IC (A) 180 12V 10V 120 90 60 VGE = 8V 90 60 VGE = 8V 30 0 2 4 6 0 8 0 2 4 6 8 Collector−Emitter Voltage, VCE (V) Figure 2. Typical Output Characteristics 180 180 Common Emitter VGE = 15V 150 o Collector Current, IC (A) Collector Current, IC (A) 10V 120 Figure 1. Typical Output Characteristics TC = 25 C o TC = 125 C 120 90 60 0 1 2 3 4 Common Emitter VCE = 20V 150 o TC = 25 C o TC = 125 C 120 30 90 60 30 0 5 0 Figure 3. Typical Saturation Voltage Characteristics 4.0 Collector−Emitter Voltage, VCE (V) 120A 3.0 2.5 60A 2.0 IC = 30A 1.5 1.0 25 50 75 100 2 3 4 5 Figure 4. Transfer Characteristics Common Emitter VGE = 15V 3.5 1 Gate−Emitter Voltage,VGE (V) Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) 15V 12V Collector−Emitter Voltage, VCE (V) 0 20V 150 30 0 o TC = 125 C 20 o TC = −40 C 16 12 8 125 120A 4 60A IC = 30A 0 Collector−Emitter Case Temperature, TC (5C) Common Emitter 0 4 8 12 16 20 Gate−Emitter Voltage, VGE (V) Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 FGH60N60SF TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 20 Common Emitter Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) 20 o TC = 25 C 16 12 8 120A 4 0 60A IC = 30A 0 4 8 12 16 Common Emitter o TC = 125 C 16 12 8 60A 4 IC = 30A 0 20 0 4 Gate−Emitter Voltage, VGE (V) 15 Capacitance (pF) o TC = 25 C Cies 3000 Coes 2000 Cres 1 10 Collector−Emitter Voltage, VCE (V) Common Emitter 12 300V VCC = 100V 9 200V 6 3 0 30 0 50 100 150 200 Gate Charge, Qg(nC) Figure 10. Gate Charge Characteristics 500 300 10 ms 100 Collector Current, IC (A) Collector Current, IC (A) 20 o Figure 9. Capacitance Characteristics 100 ms 10 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 255C 0.1 0.01 16 TC = 25 C Gate−Emitter Voltage, VGE (V) Common Emitter VGE = 0V, f = 1MHz 1000 12 Figure 8. Saturation Voltage vs. VGE 6000 4000 8 Gate−Emitter Voltage, VGE(V) Figure 7. Saturation Voltage vs. VGE 5000 120A 100 10 Curves must be derated linearly with increase in temperature 1 10 Safe Operating Area o 100 1 1000 Collector−Emitter Voltage, VCE (V) VGE = 15V, TC = 125 C 1 10 100 1000 Collector−Emitter Voltage, VCE (V) Figure 11. SOA Characteristics Figure 12. Turn−off Switching SOA Characteristics www.onsemi.com 5 FGH60N60SF TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 300 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A 100 Switching Time (ns) Switching Time (ns) o tr Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) o 1000 TC = 25 C o TC = 125 C td(off) 100 tf TC = 25 C o TC = 125 C 10 0 10 20 30 40 10 50 0 10 50 Common Emitter VGE = 15V, RG = 5 W Common Emitter VGE = 15V, RG = 5W o o TC = 25 C TC = 25 C o TC = 125 C Switching Time (ns) Switching Time (ns) 40 1000 500 tr 100 td(on) 0 20 40 60 80 100 o TC = 125 C td(off) 100 tf 10 120 0 20 40 Figure 15. Turn−on Characteristics vs. Collector Current 20 10 30 IC = 60A Switching Loss, (mJ) TC = 25 C o TC = 125 C Eon Eoff 10 20 30 Gate Resistance, RG (W) 100 120 Common Emitter VGE = 15V, RG = 5 W o 10 o 0.5 0 80 Figure 16. Turn−off Characteristics vs. Collector Current Common Emitter VCC = 400V, VGE = 15V 1 60 Collector Current, IC (A) Collector Current, IC (A) Switching Loss (mJ) 30 Figure 14. Turn−off Characteristics vs. Gate Resistance Figure 13. Turn−on Characteristics vs. Gate Resistance 10 20 Gate Resistance,RG (W) Gate Resistance, RG (W) 40 Eon o TC = 125 C Eoff 1 0.1 50 TC = 25 C 0 20 40 60 80 100 120 Collector Current, IC (A) Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current www.onsemi.com 6 FGH60N60SF TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Thermal Response (Zthjc) 1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + T single pulse 1E−3 1E−5 1E−4 1E−3 0.01 Rectangular Pulse Duration (sec) 0.1 Figure 19. Transient Thermal Impedance of IGBT www.onsemi.com 7 C 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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