FGH40N60SFTU

IGBT - Field Stop 600 V, 40 A FGH40N60SF Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching: EOFF = 8 J/A This Device is Pb−Free and is RoHS Compliant G E E Applications • Solar Inverter, UPS, Welder, PFC C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40N60 SF $Y &Z &3 &K FGH40N60SF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 February, 2020 − Rev. 2 1 Publication Order Number: FGH40N60SF/D FGH40N60SF ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Ratings Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES ±20 V Description Transient Gate−to−Emitter Voltage ±30 Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current TC = 25°C Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C IC 80 A 40 A ICM (Note 1) 120 A PD 290 W 116 W Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction to Case Symbol Typ Max Unit RJC(IGBT) − 0.43 °C/W RJA − 40 °C/W Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Packing Method Reel Size Tape Width Quantity FGH40N60SFTU FGH40N60SF TO−247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A − 0.6 − V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.0 5.0 6.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 2.3 2.9 V IC = 40 A, VGE = 15 V, TC = 125°C − 2.5 − V ON CHARACTERISTICs www.onsemi.com 2 FGH40N60SF ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 2110 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 200 − pF Reverse Transfer Capacitance Cres − 60 − pF − 25 − ns − 42 − ns td(off) − 115 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VCC = 400 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 25°C tf − 27 54 ns Turn−On Switching Loss Eon − 1.13 − mJ Turn−Off Switching Loss Eoff − 0.31 − mJ Total Switching Loss Ets 1.44 − mJ Turn−On Delay Time td(on) − 24 − ns − 43 − ns td(off) − 120 − ns tf − 30 − ns Turn−On Switching Loss Eon − 1.14 − mJ Turn−Off Switching Loss Eoff − 0.48 − mJ Total Switching Loss Ets − 1.62 − mJ Total Gate Charge Qg − 120 − nC Gate to Emitter Charge Qge − 14 − nC Gate to Collector Charge Qgc − 58 − nC Rise Time Turn−Off Delay Time Fall Time tr VCC = 400 V, IC = 40 A, RG = 10  VGE = 15 V, Inductive Load, TC = 125°C VCE = 400 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH40N60SF TYPICAL PERFORMANCE CHARACTERISTICS 120 120 100 20 V TC = 125°C 15 V 80 12 V 60 40 10 V 20 0.0 80 1.5 3.0 4.5 Collector−Emitter Voltage, VCE [V] 60 10 V 40 0 0.0 6.0 40 20 0 0 1 2 3 Collector−Emitter Voltage, VCE [V] 80 40 0 4 Common Emitter VCE = 20 V TC = 25°C TC = 125°C 6 4.0 20 Common Emitter VGE = 15 V Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 10 12 8 Gate−Emitter Voltage, VGE [V] 80 A 3.0 2.5 40 A 2.0 IC = 20 A 1.5 25 50 75 100 13 Figure 4. Transfer Characteristics Figure 3. Typical Saturation Voltage Characteristics 3.5 6.0 120 Common Emitter VGE = 15 V TC = 25°C TC = 125°C 60 1.5 3.0 4.5 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics Collector Current, IC [A] Collector Current, IC [A] 80 VGE = 8 V Figure 1. Typical Output Characteristics 1.0 15 V 12 V 20 VGE = 8 V 0 20 V 100 Collector Current, IC [A] Collector Current, IC [A] TC = 25°C 16 12 8 Case Temperature, TC [°C] 40 A 4 80 A IC = 20 A 0 125 Common Emitter TC = −40°C 4 8 12 16 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 20 FGH40N60SF TYPICAL PERFORMANCE CHARACTERISTICS (continued) 20 Common Emitter TC = 25°C 16 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 20 12 8 4 0 80 A 40 A IC = 20 A 4 8 12 16 12 8 40 A IC = 20 A 0 4 Gate−Emitter Voltage, VGE [V] Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C Ciss Gate−Emitter Voltage, VGE [V] 4000 Capacitance [pF] 20 15 5000 3000 Coss 2000 Crss 1000 0 0.1 VCC = 100 V 300 V 200 V 9 6 3 0 30 1 10 Collector−Emitter Voltage, VCE [V] Common Emitter TC = 25°C 12 0 50 100 Gate Charge, Qg [nC] 150 Figure 10. Gate Charge Characteristics Figure 9. Capacitance Characteristics 400 200 100 10 s 100 s 10 Switching Time [ns] Collector Current, IC [A] 12 16 8 Gate−Emitter Voltage, VGE [V] Figure 8. Saturation Voltage vs. VGE Figure 7. Saturation Voltage vs. VGE 1 ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.01 80 A 4 20 16 Common Emitter TC = 125°C 1 10 100 tr td(on) 100 10 0 1000 Collector−Emitter Voltage, VCE [V] 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 125°C 20 30 40 Gate Resistance, RG [] 50 Figure 12. Turn−On Characteristics vs. Gate Resistance Figure 11. SOA Characteristics www.onsemi.com 5 FGH40N60SF TYPICAL PERFORMANCE CHARACTERISTICS (continued) 500 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 125°C Switching Time [ns] 1000 Switching Time [ns] 5500 td(off) 100 tf 10 0 10 20 30 40 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C td(on) 10 50 tr 100 60 40 Collector Current, IC [A] 20 Gate Resistance, RG [] Figure 14. Turn−On Characteristics vs. Collector Current Figure 13. Turn−Off Characteristics vs. Gate Resistance 10 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C Switching Loss [mJ] Switching Time [ns] 500 td(off) 100 tf 10 40 20 80 60 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TC = 25°C TC = 125°C 1 Eoff 0.2 80 Collector Current, IC [A] Eon 0 10 20 30 40 Gate Resistance, RG [] 50 Figure 16. Switching Loss vs. Gate Resistance Figure 15. Turn−Off Characteristics vs. Collector Current 30 Eon Load Current [A] Switching Loss [mJ] 10 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 125°C Eoff 1 0.1 20 30 40 50 60 Collector Current, IC [A] 70 80 Frequency [kHz] Figure 17. Switching Loss vs. Collector Current Figure 18. Load Current vs. Frequency www.onsemi.com 6 FGH40N60SF TYPICAL PERFORMANCE CHARACTERISTICS (continued) 200 Collector Current, IC [A] 100 10 Safe Operating Area VGE = 15 V, TC = 125°C 1 1 10 1000 100 Collector−Emitter Voltage, VCE [V] Figure 19. Turn−Off Switching SOA Characteristics Thermal Response [Zjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse 1E−3 1E−5 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−4 1E−3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 20. Transient Thermal Impedance of IGBT www.onsemi.com 7 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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