DATA SHEET
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EcoSPARK Ignition IGBT
20 mJ, 360 V, N−Channel Ignition IGBT
FGB3236-F085,
FGI3236-F085
D2PAK−3
CASE 418AJ
I2PAK (TO−262 3 LD)
CASE 418AV
Features
•
•
•
•
•
Industry Standard D2PAK Package
SCIS Energy = 330 mJ at TJ = 25°C
Logic Level Gate Drive
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant
MARKING DIAGRAM
1 Gate
3 Emitter
Applications
A
Y
WW
XXXX
G
• Automotive Ignition Coil Driver Circuits
• Coil On Plug Applications
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Units
BVCER
Collector to Emitter Breakdown Voltage
(IC = 1 mA)
360
V
BVECS
Emitter to Collector Voltage − Reverse
Battery Condition (IC = 10 mA)
24
V
ESCIS25
Self Clamping Inductive Switching Energy
(ISCIS = 14.7 A, L = 3.0 mHy, TJ = 25°C)
320
mJ
ESCIS150 Self Clamping Inductive Switching Energy
(ISCIS = 10.4 A, L = 3.0 mHy, TJ = 150°C)
160
mJ
IC25
Collector Current Continuous
at VGE = 4.0 V, TC = 25°C
44
A
IC110
Collector Current Continuous
at VGE = 4.0 V, TC = 110°C
27
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total, at TC = 25°C
187
W
Power Dissipation Derating, for TC > 25°C
1.25
W/°C
Operating Junction Temperature Range
−40 to +175
°C
TSTG
Storage Junction Temperature Range
−40 to +175
°C
TL
Max. Lead Temperature for Soldering
(Leads at 1.6 mm from case for 10 s)
300
°C
TPKG
Max. Lead Temperature for Soldering
(Package Body for 10 s)
260
°C
ESD
Electrostatic Discharge Voltage
at 100 pF, 1500 W
4
kV
TJ
AYWW
XXX
XXXXXG
2 Collector
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
4 Collector
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
Collector (Flange)
$Y&Z&3&K
FGI
3236
Gate
$Y
&Z
&3
&K
FGI3236
Emitter
= onsemi Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
SYMBOL
COLLECTOR
GATE
R1
R2
EMITTER
ORDERING INFORMATION
See detailed ordering and shipping information on page 3
of this data sheet.
© Semiconductor Components Industries, LLC, 2008
July, 2022 − Rev. 2
1
Publication Order Number:
FGB3236−F085/D
FGB3236−F085, FGI3236−F085
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF STATE CHARACTERISTICS
BVCER
Collector to Emitter Breakdown
Voltage
ICE = 2 mA, VGE = 0 V,
RGE = 1 kW, see Figure 15
TJ = −40 to 150°C
330
363
390
V
BVCES
Collector to Emitter Breakdown
Voltage
ICE = 10 mA, VGE = 0 V,
RGE = 0,
TJ = −40 to 150°C
350
378
410
V
BVECS
Emitter to Collector Breakdown
Voltage
ICE = −75 mA, VGE = 0 V,
TJ = 25°C
30
−
−
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ±2 mA
±12
±14
−
V
ICES
Collector to Emitter Leakage Current
VCES = 250 V,
see Figure 11
TJ = 25°C
−
−
25
mA
TJ = 150°C
−
−
1
mA
IECS
Emitter to Collector Leakage Current
VEC = 24 V,
see Figure 11
TJ = 25°C
−
−
1
mA
TJ = 150°C
−
−
40
−
120
−
W
10K
−
30K
W
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
ON STATE CHARACTERISTICS
VCE(SAT)
Collector to Emitter Saturation
Voltage
ICE = 6 A, VGE = 4 V, TC = 25°C,
see Figure 3
−
1.14
1.4
V
VCE(SAT)
Collector to Emitter Saturation
Voltage
ICE = 10 A, VGE = 4.5 V, TC = 150°C,
see Figure 4
−
1.32
1.7
V
VCE(SAT)
Collector to Emitter Saturation
Voltage
ICE = 15 A, VGE = 4.5 V, TC = 150°C
−
1.61
2.05
V
Collector to Emitter On State Current
VGE = 5 V, VCE = 5 V
50
−
−
A
−
20
−
nC
TC = 25°C
1.3
1.6
2.2
V
TC = 150°C
0.75
1.1
1.8
VCE = 12 V, ICE = 10 A
−
2.6
−
V
VCE = 14 V, RL = 1 W,
VGE = 5 V, RG = 1 kW,
TJ = 25°C, see Figure 12
−
0.65
4
ms
−
1.7
7
VCE = 300 V, L = 500 mHy,
VGE = 5 V, RG = 1 kW,
TJ = 25°C, see Figure 12
−
5.4
15
−
1.64
15
TJ = 25°C, L = 3.0 mHy, ICE = 14.7 A,
VGE = 5 V, RG = 1 kW,
see Figures 1 & 2
−
−
320
mJ
All Packages
−
−
0.8
°C/W
ICE(ON)
DYNAMIC CHARACTERISTICS
QG(ON)
Gate Charge
ICE = 10 A, VCE = 12 V, VGE = 5 V,
see Figure 14
VGE(TH)
Gate to Emitter Threshold Voltage
ICE = 1 mA,
VCE = VGE,
see Figure 10
VGEP
Gate to Emitter Plateau Voltage
SWITCHING CHARACTERISTICS
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn−On Delay
Time−Resistive
Current Rise Time−Resistive
Current Turn−Off Delay
Time−Inductive
Current Fall Time−Inductive
Self Clamped Inductive Switching
THERMAL CHARACTERISTICS
RqJC
Thermal Resistance Junction to Case
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FGB3236−F085, FGI3236−F085
PACKAGE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping†
FGB3236−F085
FGB3236
D2PAK (Pb−Free)
800 units / Tape & Reel
FGB3236−F085C
FGB3236
D2PAK (Pb−Free)
800 units / Tape & Reel
FGI3236−F085
FGI3236
I2PAK (TO−262 3 LD) (Pb−Free)
400 units / Tube
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
FGB3236−F085, FGI3236−F085
35
ISCIS , INDUCTIVE SWITCHING CURRENT (A)
ISCIS , INDUCTIVE SWITCHING CURRENT (A)
TYPICAL PERFORMANCE CHARACTERISTICS
RG = 1K W , V GE = 5V
30
25
20
o
T J = 25 C
15
o
T J = 150 C
10
5
0
SCIS Curves valid for V clamp
0
20
40
60
Voltages of