FQU5N60CTU

N-Channel QFET® MOSFET 600 V, 2.8 A, 2.5 Ω Features Description • 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 1.4 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge ( Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant D D G S I-PAK D-PAK G D G S S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD5N60CTM / FQU5N60CTU 600 Unit V 2.8 A - Continuous (TC = 100°C) 1.8 A 11.2 A IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 2.8 A EAR (Note 1) dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* 4.9 4.5 2.5 mJ V/ns W PD Power Dissipation (TC = 25°C) 49 0.39 -55 to +150 W W/°C °C 300 °C TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max. ©2003 Semiconductor Components Industries, LLC. October-2017,Rev.3 FQD5N60CTM / FQU5N60CTU 2.56 110 Unit °C/W 50 Publication Order Number: FQU5N60C/D FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET FQD5N60C / FQU5N60C Device Marking FQD5N60C Device FQD5N60CTM Package D-PAK Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FQU5N60C FQU5N60CTU I-PAK Tube N/A 70 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 600 -- -- V -- 0.6 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSSF IGSSR VDS = 600 V, VGS = 0 V -- -- 1 μA VDS = 480 V, TC = 125°C -- -- 10 μA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.4 A -- 2.0 2.5 Ω gFS Forward Transconductance VDS = 40 V, ID = 1.4 A -- 4.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 515 670 pF -- 55 72 pF -- 6.5 8.5 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4) -- 10 30 ns -- 42 90 ns -- 38 85 ns -- 46 100 ns -- 15 19 nC -- 2.5 -- nC -- 6.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A ISM -- -- 11.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.8 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 300 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/μs -- 2.2 -- μC NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 0 10 1 10 ID, Drain Current [A] 1 10 -1 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -2 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1 10 5 VGS = 10V 4 3 2 VGS = 20V 1 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ ※ Note : TJ = 25℃ 0 -1 0 2 4 6 8 10 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1000 1.2 1.4 12 Ciss 600 Coss 400 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] 800 Capacitance [pF] 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 200 0.8 VSD, Source-Drain voltage [V] VDS = 120V 10 VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 4.5A 0 -1 10 0 0 10 1 10 0 4 12 16 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 8 Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 1.4 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 1 10 μs 100 μs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 100 ms DC 0 10 -1 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 1 2 10 1.5 1.0 0.5 -2 10 2.0 0.0 25 3 10 10 50 75 100 125 TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature ZθJC(t), Thermal Response [oC/W] Zθ JC(t), Thermal Response VDS, Drain-Source Voltage [V] 10 D = 0 .5 0 ※ N o te s : 1 . Z θ J C (t) = 2 .5 6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 0 .1 PDM 0 .0 5 10 -1 t1 0 .0 2 t2 0 .0 1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET Typical Characteristics FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp www.onsemi.com 5 Time DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET Mechanical Dimensions TO-252 3L (DPAK) Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. Dimension in Millimeter www.onsemi.com 7 FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET Mechanical Dimensions TO-251 3L (IPAK) Figure 17. TO251 (IPAK) Molded 3 Lead Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 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