N-Channel QFET® MOSFET
600 V, 1.9 A, 4.7 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,
ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D-PAK
G
I-PAK
D
G
S
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IDM
Drain Current
FQD2N60CTM / FQU2N60CTU
600
Unit
V
1.9
A
- Continuous (TC = 100°C)
1.14
A
- Pulsed
7.6
A
(Note 1)
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
IAR
Avalanche Current
(Note 1)
1.9
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
(Note 1)
4.4
4.5
2.5
mJ
V/ns
W
44
0.35
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max.
©2003 Semiconductor Components Industries, LLC.
October-2017,Rev.2
FQD2N60CTM /
FQU2N60CTU
2.87
110
Unit
°C/W
50
Publication Order Number:
FQU2N60C/D
FQD2N60C / FQU2N60C — N-Channel QFET® MOSFET
FQD2N60C / FQU2N60C
Device Marking
FQD2N60C
Device
FQD2N60CTM
Package
D-PAK
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FQU2N60C
FQU2N60CTU
I-PAK
Tube
N/A
70 units
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted.
Parameter
Off Characteristics
Test Conditions
Min
Typ
Max
Unit
600
--
--
V
--
0.6
--
V/°C
VDS = 600 V, VGS = 0 V
--
--
1
μA
VDS = 480 V, TC = 125°C
---
10
100
μA
nA
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
---
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.95 A
--
3.6
4.7
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 0.95 A
--
5.0
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
180
235
pF
--
20
25
pF
--
4.3
5.6
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25 Ω
(Note 4)
VDS = 480 V, ID = 2 A,
VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
--
9
28
ns
--
25
60
ns
--
24
58
ns
--
28
66
ns
--
8.5
12
nC
--
1.3
--
nC
--
4.1
--
nC
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.9
A
ISM
--
--
7.6
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 1.9 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
230
--
ns
Qrr
Reverse Recovery Charge
--
1.0
--
μC
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/μs
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
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2
FQD2N60C / FQU2N60C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
-1
10
o
150 C
o
-55 C
0
10
o
25 C
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-2
10
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
12
VGS = 10V
8
6
4
VGS = 20V
2
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
※ Note : TJ = 25℃
0
-1
0
1
2
3
4
5
10
0.2
0.4
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
450
Capacitance [pF]
400
350
Ciss
300
Coss
250
200
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
150
Crss
100
0.8
1.2
1.4
12
VDS = 120V
10
VDS = 300V
8
VDS = 480V
6
4
2
50
0
-1
10
1.0
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
Figure 5. Capacitance Characteristics
0.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
※ Note : ID = 2A
0
10
1
10
0
0
2
4
6
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
8
10
FQD2N60C / FQU2N60C — N-Channel QFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.95 A
0.5
0.0
-100
200
-50
o
TJ, Junction Temperature [ C]
0
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
Operation in This Area
is Limited by R DS(on)
1
1.6
100 μs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
0
10
1.2
10 ms
100 ms
DC
0.8
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.4
-2
1
2
10
0.0
25
3
10
10
50
75
100
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
Zθ JC(t), Thermal Response
0
10
ZθJC(t), Thermal Response [oC/W]
10
D = 0 .5
10
※ N o te s :
1 . Z θ J C (t) = 2 .8 7 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
0 .0 1
-1
t1
t2
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
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4
10
0
10
1
125
150
FQD2N60C / FQU2N60C — N-Channel QFET® MOSFET
Typical Performance Characteristics (Continued)
FQD2N60C / FQU2N60C — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
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5
Time
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
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6
VDD
FQD2N60C / FQU2N60C — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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