FQU6N40CTU

FQD6N40C / FQU6N40C N-Channel QFET MOSFET 400 V, 4.5 A, 1.0 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 4.5 A, 400 V, RDS(on) = 1.0 Ω (Max) @VGS = 10 V, ID = 2.25 A • Low Gate Charge (Typ. 16 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested D ! D ● G S D-PAK FQD Series G D S G! I-PAK ◀ ▲ ● ● FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD6N40C / FQU6N40C 400 Unit V 4.5 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) 2.7 A 18 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* (Note 1) 4.8 4.5 2.5 mJ V/ns W 48 0.38 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient.* RθJA Thermal Resistance, Junction-to-Ambient. Max 2.6 Unit °C/W -- 50 °C/W -- 110 °C/W Typ -- * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 www.fairchildsemi.com FQD6N40C / FQU6N40C N-Channel MOSFET March 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 400 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.54 IDSS IGSSF IGSSR VDS = 400 V, VGS = 0 V -- -- 1 µA VDS = 320 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.25A -- 0.83 1 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.25A -- 4.7 -- S -- 480 625 pF -- 80 105 pF -- 15 20 pF -- 13 35 ns -- 65 140 ns -- 21 55 ns -- 38 85 ns -- 16 20 nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 6A, RG = 25 Ω (Note 4, 5) VDS = 320 V, ID = 6A, VGS = 10 V (Note 4, 5) -- 2.3 -- nC -- 8.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A ISM -- -- 18 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 230 -- ns Qrr Reverse Recovery Charge -- 1.7 -- µC VGS = 0 V, IS = 6 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7 mH, IAS = 6 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 www.fairchildsemi.com FQD6N40C / FQU6N40C N-Channel MOSFET Electrical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C o 0 -55 C 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.5 1 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0.5 0 5 10 15 20 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1200 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 80V 10 Capacitance [pF] Ciss Coss 600 400 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 VGS, Gate-Source Voltage [V] VDS = 200V 800 8 VDS = 320V 6 4 2 ※ Note : ID = 6A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 0 5 10 15 20 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQD6N40C / FQU6N40C N-Channel MOSFET Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.25 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature o 2 5 10 Operation in This Area is Limited by R DS(on) 1 100 µs 4 10 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 3 10 ms 0 DC 10 2 -1 10 ※ Notes : 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] (t), T h e r m a l R e s p o n s e 100 125 150 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area D = 0 .5 10 ※ N o te s : 1 . Z θ J C (t) = 2 .6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 0 .2 0 .1 0 .0 5 10 -1 0 .0 1 10 PDM 0 .0 2 Z θ JC 75 TC, Case Temperature [℃] -5 t1 s in g le p u ls e 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 www.fairchildsemi.com FQD6N40C / FQU6N40C N-Channel MOSFET Typical Characteristics FQD6N40C / FQU6N40C N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQD6N40C / FQU6N40C N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 www.fairchildsemi.com FQD6N40C / FQU6N40C N-Channel MOSFET Mechanical Dimensions D - PAK Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 www.fairchildsemi.com FQD6N40C / FQU6N40C N-Channel MOSFET Mechanical Dimensions I - PAK Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2003 Fairchild Semiconductor Corporation FQD6N40C / FQU6N40C Rev. C0 www.fairchildsemi.com FQD6N40C / FQU6N40C N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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