MMBT2369ALT1G

MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • www.onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOT−23 CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage VCES 40 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage VEBO 4.5 Vdc IC 200 mAdc Collector Current − Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C PD RqJA MARKING DIAGRAM xxx M G G PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 1 xxx = M1J or 1JA M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MMBT2369LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBT2369LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT2369ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBT2369ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 October, 2016 − Rev. 10 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBT2369LT1/D MMBT2369L, MMBT2369AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Collector −Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CES Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Min Typ Max 15 − − 40 − − 40 − − 4.5 − − − − − − 0.4 30 − − 0.4 40 − 40 20 30 20 20 − − − − − − − 120 120 − − − − − − − − − − − − − − − 0.25 0.20 0.30 0.25 0.50 0.7 − − − − − − − 0.85 1.02 1.15 1.60 − − 4.0 5.0 − − − 5.0 13 − 8.0 12 − 10 18 Unit OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) ICBO Collector Cutoff Current MMBT2369A (VCE = 20 Vdc, VBE = 0) ICES Vdc Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) MMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc) MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C) MMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc) MMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc) MMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector −Emitter Saturation Voltage (Note 3) MMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 3) MMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C) MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Cobo Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) pF hfe − SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) ts Turn−On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton Turn−Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff ns ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. www.onsemi.com 2 MMBT2369L, MMBT2369AL t1 +10.6 V 0 -1.5 V 3V < 1 ns 270 W t1 +10.8 V 3.3 k -2 V Cs* < 4 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 10 V 95 W 0 < 1 ns Cs* < 12 pF 1k PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 2. ton Circuit − 100 mA Figure 1. ton Circuit − 10 mA +10.75 V 270 W t1 +11.4 V t1 10 V 0 -8.6 V 0 -9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Cs* < 12 pF 1k < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 ms DUTY CYCLE = 2% Cs* < 4 pF 3.3 k 95 W 1N916 *Total shunt capacitance of test jig and connectors. Figure 4. toff Circuit − 100 mA Figure 3. toff Circuit − 10 mA TO OSCILLOSCOPE INPUT IMPEDANCE = 50 W RISE TIME = 1 ns TURN-ON WAVEFORMS Vin 0 220 W 10% Vout ton 90% PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 W PW ≥ 300 ns DUTY CYCLE < 2% Vin 0.1 mF Vout 3.3 kW 50 W VBB +- 50 W 3.3 k 0.0023 mF 0.005 mF 0.0023 mF 0.005 mF 0.1 mF 0.1 mF 3 10% Vin 90% Vout +V =3V - CC Figure 5. Turn−On and Turn−Off Time Test Circuit www.onsemi.com TURN-OFF WAVEFORMS 0 toff VBB = +12 V Vin = -15 V MMBT2369L, MMBT2369AL 100 6 LIMIT TYPICAL TJ = 25°C 5 Cib SWITCHING TIMES (nsec) CAPACITANCE (pF) 4 3 Cob 2 1 0.1 βF = 10 VCC = 10 V VOB = 2 V 50 tr 5 ts td 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 C < COPT 1 10 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 7. Typical Switching Times t1 +6 V C=0 10 V 980 0 -4 V COPT Cs* < 3 pF 500 < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% TIME Figure 8. Turn−Off Waveform VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) VCC = 10 V 10 Figure 6. Junction Capacitance Variations C tf tr (VCC = 3 V) 20 Figure 9. Storage Time Equivalent Test Circuit 1.0 TJ = 25°C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 Figure 10. Maximum Collector Saturation Voltage Characteristics www.onsemi.com 4 10 20 MMBT2369L, MMBT2369AL TJ = 125°C VCE = 1 V 75°C 25°C 100 TJ = 25°C and 75°C -15°C 50 -55°C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 11. Minimum Current Gain Characteristics 1.4 V(sat) , SATURATION VOLTAGE (VOLTS) hFE, MINIMUM DC CURRENT GAIN 200 βF = 10 TJ = 25°C 1.2 MAX VBE(sat) 1.0 MIN VBE(sat) 0.8 0.6 0.4 0.2 MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 Figure 12. Saturation Voltage Limits www.onsemi.com 5 100 100 MMBT2369L, MMBT2369AL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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