SMMBT2369ALT1G

MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • www.onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MARKING DIAGRAM SOT−23 CASE 318 STYLE 6 MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage VCES 40 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage VEBO 4.5 Vdc IC 200 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous xxx = M1J or 1JA M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature xxx MG G PD RqJA PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 1 BASE 2 EMITTER ORDERING INFORMATION Package Shipping† MMBT2369LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT2369LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBT2369LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT2369ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBT2369ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 October, 2018 − Rev. 11 1 Publication Order Number: MMBT2369LT1/D MMBT2369L, MMBT2369AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Collector −Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CES Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Min Typ Max 15 − − 40 − − 40 − − 4.5 − − − − − − 0.4 30 − − 0.4 40 − 40 20 30 20 20 − − − − − − − 120 120 − − − − − − − − − − − − − − − 0.25 0.20 0.30 0.25 0.50 0.7 − − − − − − − 0.85 1.02 1.15 1.60 − − 4.0 5.0 − − − 5.0 13 − 8.0 12 − 10 18 Unit OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) ICBO Collector Cutoff Current MMBT2369A (VCE = 20 Vdc, VBE = 0) ICES Vdc Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) MMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc) MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C) MMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc) MMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc) MMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector −Emitter Saturation Voltage (Note 3) MMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 3) MMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C) MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Cobo Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) hfe pF − SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) ts Turn−On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton Turn−Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff ns ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. www.onsemi.com 2 MMBT2369L, MMBT2369AL t1 +10.6 V 0 -1.5 V 3V < 1 ns 270 W t1 +10.8 V 3.3 k -2 V Cs* < 4 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 10 V 95 W 0 < 1 ns Cs* < 12 pF 1k PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 2. ton Circuit − 100 mA Figure 1. ton Circuit − 10 mA +10.75 V 270 W t1 +11.4 V t1 10 V 0 -8.6 V 0 -9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Cs* < 12 pF 1k < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 ms DUTY CYCLE = 2% Cs* < 4 pF 3.3 k 95 W 1N916 *Total shunt capacitance of test jig and connectors. Figure 4. toff Circuit − 100 mA Figure 3. toff Circuit − 10 mA TO OSCILLOSCOPE INPUT IMPEDANCE = 50 W RISE TIME = 1 ns TURN-ON WAVEFORMS Vin 0 220 W 10% Vout ton 90% PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 W PW ≥ 300 ns DUTY CYCLE < 2% Vin 0.1 mF Vout 3.3 kW 50 W VBB +- 50 W 3.3 k 0.0023 mF 0.005 mF 0.0023 mF 0.005 mF 0.1 mF 0.1 mF 3 10% Vin 90% Vout +V =3V - CC Figure 5. Turn−On and Turn−Off Time Test Circuit www.onsemi.com TURN-OFF WAVEFORMS 0 toff VBB = +12 V Vin = -15 V MMBT2369L, MMBT2369AL 100 6 LIMIT TYPICAL TJ = 25°C 5 Cib SWITCHING TIMES (nsec) CAPACITANCE (pF) 4 3 Cob 2 1 0.1 βF = 10 VCC = 10 V VOB = 2 V 50 tr 5 ts td 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 C < COPT 1 10 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 7. Typical Switching Times t1 +6 V C=0 10 V 980 0 -4 V COPT Cs* < 3 pF 500 < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% TIME Figure 8. Turn−Off Waveform VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) VCC = 10 V 10 Figure 6. Junction Capacitance Variations C tf tr (VCC = 3 V) 20 Figure 9. Storage Time Equivalent Test Circuit 1.0 TJ = 25°C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 Figure 10. Maximum Collector Saturation Voltage Characteristics www.onsemi.com 4 10 20 MMBT2369L, MMBT2369AL TJ = 125°C VCE = 1 V 75°C 25°C 100 TJ = 25°C and 75°C -15°C 50 -55°C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 11. Minimum Current Gain Characteristics 1.4 V(sat) , SATURATION VOLTAGE (VOLTS) hFE, MINIMUM DC CURRENT GAIN 200 βF = 10 TJ = 25°C 1.2 MAX VBE(sat) 1.0 MIN VBE(sat) 0.8 0.6 0.4 0.2 MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 Figure 12. Saturation Voltage Limits www.onsemi.com 5 100 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative