MMBT5550LT3G

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Other names and brands may be claimed as the property of others. High Voltage Transistors NPN Silicon MMBT5550L, MMBT5551L Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MMBT5550 MMBT5551 MMBT5550 MMBT5551 Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge Human Body Model Machine Model VCEO VCBO Value Unit Vdc 140 160 Vdc 160 180 6.0 Vdc IC 600 mAdc V > 8000 > 400 2 x1x M G G SOT−23 (TO−236) CASE 318 STYLE 6 1 Max Unit 225 1.8 mW mW/°C 556 °C/W x1x = Device Code M1F = MMBT5550LT G1 = MMBT5551LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 300 2.4 mW mW/°C ORDERING INFORMATION RqJA 417 °C/W TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate Above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C PD Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM 3 1 VEBO ESD 2 EMITTER Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. Device Package Shipping† MMBT5550LT1G, SOT−23 NSVMMBT5550LT1G (Pb−Free) 3,000 / Tape & Reel MMBT5550LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBT5551LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBT5551LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT5551LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBT5551LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 May, 2020 − Rev. 13 1 Publication Order Number: MMBT5550LT1/D MMBT5550L, MMBT5551L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 140 160 − − 160 180 − − 6.0 − − − − − 100 50 100 50 − 50 60 80 60 80 20 30 − − 250 250 − − − − − 0.15 0.25 0.20 − − − 1.0 1.2 1.0 − − 50 100 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) MMBT5550 MMBT5551 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MMBT5550 MMBT5551 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5550 MMBT5551 MMBT5550 MMBT5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Both Types MMBT5550 MMBT5551 Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Both Types MMBT5550 MMBT5551 Collector Emitter Cut−off (VCB = 10 V) (VCB = 75 V) Both Types hFE VCE(sat) VBE(sat) ICES − Vdc Vdc nA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. www.onsemi.com 2 MMBT5550L, MMBT5551L TYPICAL CHARACTERISTICS 500 300 h FE, DC CURRENT GAIN VCE = 1.0 V VCE = 5.0 V TJ = 125°C 200 25°C 100 -55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region 101 0.30 IC/IB = 10 VCE(sat), Coll-Emitt Saturation Voltage (V) IC, COLLECTOR CURRENT (A) μ VCE = 30 V 100 10-1 TJ = 125°C 10-2 75°C REVERSE 10-3 FORWARD 25°C 10-4 10-5 0.4 IC = ICES 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.25 150°C 0.20 0.15 25°C 0.10 -55°C 0.05 0 0.0001 Figure 3. Collector Cut−Off Region 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 4. VCE(sat) www.onsemi.com 3 0.1 MMBT5550L, MMBT5551L TYPICAL CHARACTERISTICS 1.00 1.10 IC/IB = 10 -55°C 0.90 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.20 0.0001 VCE = 10 V 1.00 VBE(on), Base-Emitter Voltage (V) VBE(sat), Base-Emitt Saturation Voltage (V) 1.10 0.90 -55°C 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.20 0.0001 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 5. VBE(sat) Figure 6. VBE(on) 100 70 50 TJ = - 55°C to +135°C 1.5 0.5 qVC for VCE(sat) 0 - 0.5 - 1.0 qVB for VBE(sat) - 1.5 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 - 2.0 - 2.5 0.1 TJ = 25°C 30 1.0 C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENT (mV/ °C) 2.5 2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Temperature Coefficients Figure 8. Capacitances VCC 30 V VBB -8.8 V 10.2 V Vin 100 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RB Vout 5.1 k Vin 100 1N914 Values Shown are for IC @ 10 mA Figure 9. Switching Time Test Circuit www.onsemi.com 4 RC 10 20 MMBT5550L, MMBT5551L TYPICAL CHARACTERISTICS 1 VCE = 1 V TA = 25°C IC, COLLECTOR CURRENT (A) fT, Current Gain Bandwidth Product (Mhz) 1000 100 10 1 0.1 100 1.0 10 IC, COLLECTOR CURRENT (mA) 10 mS 0.1 1.0 S 0.01 0.001 1.0 1000 100 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Current Gain Bandwidth Product Figure 11. Safe Operating Area 1000 500 30 300 20 200 10 Cibo 7.0 5.0 Cobo 3.0 tr @ VCC = 120 V tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 1.0 0.2 IC/IB = 10 TJ = 25°C TJ = 25°C t, TIME (ns) C, CAPACITANCE (pF) 100 70 50 1000 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 10 0.2 0.3 0.5 20 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 12. Capacitances Figure 13. Turn−On Time www.onsemi.com 5 1.0 50 100 200 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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