NTGS3441T1G

NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P−Channel TSOP−6 Features • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW P−Channel Applications 1 2 5 6 • Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol 3 Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS "8.0 V Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) RqJA Pd ID IDM 244 0.5 −1.65 −10 °C/W W A A Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) RqJA Pd ID IDM 128 1.0 −2.35 −14 °C/W W A A Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) RqJA Pd ID IDM 62.5 2.0 −3.3 −20 °C/W W A A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C 4 MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Source 6 5 4 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, operating to steady state. 2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), operating to steady state. 3. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), t t 5.0 seconds. TSOP−6 CASE 318G STYLE 1 PT M G PT MG G 1 2 3 Drain Drain Gate = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NTGS3441T1G TSOP−6 (Pb−Free) 3000 / Tape & Reel NVGS3441T1G TSOP−6 (Pb−Free) 3000 / Tape& Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 6 1 Publication Order Number: NTGS3441T1/D NTGS3441, NVGS3441 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5) Symbol Characteristic Min Typ Max Unit −20 − − − − − − −1.0 −5.0 − − −100 − − 100 −0.45 −1.05 −1.50 − − 0.069 0.117 0.090 0.135 − 6.8 − Ciss − 480 − pF Coss − 265 − pF Crss − 100 − pF td(on) − 13 25 ns tr − 23.5 45 ns td(off) − 27 50 ns tf − 24 45 ns Qtot − 6.2 14 nC OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = −10 mA) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C) IDSS Gate−Body Leakage Current (VGS = −8.0 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) IGSS Vdc mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) VGS(th) Static Drain−Source On−State Resistance (VGS = −4.5 Vdc, ID = −3.3 Adc) (VGS = −2.5 Vdc, ID = −2.9 Adc) RDS(on) Forward Transconductance (VDS = −10 Vdc, ID = −3.3 Adc) gFS Vdc W Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 W) Fall Time Total Gate Charge Gate−Source Charge Gate−Drain Charge (VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc) Qgs − 1.3 − nC Qgd − 2.5 − nC BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = −1.6 Adc, VGS = 0 Vdc) VSD − −0.88 −1.2 Vdc Diode Forward On−Voltage (IS = −3.3 Adc, VGS = 0 Vdc) VSD − −0.98 − Vdc (IS = −1.6 Adc, dIS/dt = 100 A/ms) trr − 30 60 ns Reverse Recovery Time 4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2 NTGS3441, NVGS3441 TYPICAL ELECTRICAL CHARACTERISTICS TJ = 25°C 20 VGS = −2.7 V 8 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 10 VGS = −2.5 V 6 VGS = −3 V VGS = −3.5 V VGS = −4 V VGS = −4.5 V VGS = −6 V V 4 GS = −2 V 2 VGS = −10 V 0 0.4 0 VGS = −1.5 V 0.8 1.2 1.6 TJ = −55°C 12 TJ = 100°C 8 4 1.2 1.6 2 2.4 2.8 3.2 3.6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 4 0.28 ID = −3.3 A TJ = 25°C 0.3 0.2 0.1 3 2 4 6 5 7 8 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance vs. Gate−to−Source Voltage TJ = 25°C 0.24 VGS = −2.5 V 0.2 0.16 0.12 VGS = −4.5 V 0.08 0.04 0 0 1 0.8 −25 0 12 16 20 VGS = 0 V TJ = 125°C 1.2 0.6 −50 8 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = −3.3 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 1.4 4 −ID, DRAIN CURRENT (AMPS) 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 16 0 0.4 2 0.4 0 VDS> = −10 V 25 50 75 100 125 150 10 TJ = 100°C 1 0.1 TJ = 25°C 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTGS3441, NVGS3441 TYPICAL ELECTRICAL CHARACTERISTICS VDS = 0 V VGS = 0 V 8 TJ = 25°C −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1200 C, CAPACITANCE (pF) Ciss 900 Crss 600 Ciss 300 Coss Crss 0 8 4 −VGS 0 4 8 12 16 20 6 QT 4 Qgs 0 0 −IS, SOURCE CURRENT (AMPS) VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 10 ID = −250 mA 1.1 1 0.9 0.8 0.7 25 6 8 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1.3 0 4 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation −25 2 −VDS 1.2 VDD = −20 V ID = −3.3 A TJ = 25°C 2 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.6 −50 Qgd 50 75 100 125 150 VGS = 0 V TJ = 25°C 8 6 4 2 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 TJ, JUNCTION TEMPERATURE (°C) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1.4 NTGS3441, NVGS3441 TYPICAL ELECTRICAL CHARACTERISTICS 20 POWER (W) 16 12 8 4 0 0.01 0.10 1.00 10.00 100.00 TIME (sec) NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE Figure 11. Single Pulse Power 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E−04 Single Pulse 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 SQUARE WAVE PULSE DURATION (sec) Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient http://onsemi.com 5 1E+03 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V 1 SCALE 2:1 D H ÉÉ ÉÉ 6 E1 1 NOTE 5 5 2 L2 4 GAUGE PLANE E 3 L b SEATING PLANE C DETAIL Z e DIM A A1 b c D E E1 e L L2 M c A 0.05 M DATE 12 JUN 2012 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 2: PIN 1. EMITTER 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. BASE 2 6. COLLECTOR 2 STYLE 3: PIN 1. ENABLE 2. N/C 3. R BOOST 4. Vz 5. V in 6. V out STYLE 4: PIN 1. N/C 2. V in 3. NOT USED 4. GROUND 5. ENABLE 6. LOAD STYLE 5: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 7: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. N/C 5. COLLECTOR 6. EMITTER STYLE 8: PIN 1. Vbus 2. D(in) 3. D(in)+ 4. D(out)+ 5. D(out) 6. GND STYLE 9: PIN 1. LOW VOLTAGE GATE 2. DRAIN 3. SOURCE 4. DRAIN 5. DRAIN 6. HIGH VOLTAGE GATE STYLE 10: PIN 1. D(OUT)+ 2. GND 3. D(OUT)− 4. D(IN)− 5. VBUS 6. D(IN)+ STYLE 11: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1/GATE 2 STYLE 12: PIN 1. I/O 2. GROUND 3. I/O 4. I/O 5. VCC 6. I/O STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 STYLE 14: PIN 1. ANODE 2. SOURCE 3. GATE 4. CATHODE/DRAIN 5. CATHODE/DRAIN 6. CATHODE/DRAIN STYLE 15: PIN 1. ANODE 2. SOURCE 3. GATE 4. DRAIN 5. N/C 6. CATHODE STYLE 16: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 17: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 XXXAYWG G 1 6X 3.20 XXX A Y W G 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB14888C TSOP−6 1 IC 0.95 XXX MG G = Specific Device Code =Assembly Location = Year = Work Week = Pb−Free Package STANDARD XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 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