NTGS3441PT1G

NTGS3441P Power MOSFET −20 V, −3.16 A, Single P−Channel TSOP−6 Features • • • • Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses TSOP−6 Surface Mount Package This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(ON) TYP 91 mW @ 4.5 V −20 V 144 mW @ 2.7 V 188 mW @ 2.5 V P−Channel Unit V V A 3 1256 −20 ±12 −2.5 −1.8 −3.16 4 −3.16 A ID MAX Applications • High Side Switch in DC−DC Converters • Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t = 10 s Power Dissipation (Note 1) Steady State t = 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current tp = 10 ms Steady State TA = 25°C TA = 85°C TA = 25°C PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 0.98 1.60 −1.8 −1.3 0.51 −13 −55 to 150 −1.5 260 W MARKING DIAGRAM A TSOP−6 CASE 318G STYLE 1 1 S3 MG G W A °C A °C 1 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) PT = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 654 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0751 in sq) 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3441PT1G Package Shipping † TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 0 Publication Order Number: NTGS3441P/D NTGS3441P THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – t = 10 s (Note 3) Junction−to−Ambient – Steady State (Note 4) Symbol RqJA RqJA RqJA Value 128 78 244 Unit °C/W 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = −20 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = −250 mA −20 16 −1 −10 ±100 nA V mV/ °C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±12 V VGS = VDS, ID = −250 mA VGS(TH) VGS(TH)/TJ RDS(on) 0.6 3.2 1.6 V mV/°C VGS = 4.5 V, ID = −3.0 A VGS = 2.7 V, ID = −1.5 A VGS = 2.5 V, ID = −1.5 A 91 144 188 4.0 110 165 mW Forward Transconductance gFS VDS = −15 V, ID =−1.5 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = −3.0 A VGS = 0 V, IS = −3.0 A TJ = 25°C TJ = 125°C 0.8 0.7 25 10 15 15 nC ns 1.2 V td(ON) Tr td(OFF) Tf VGS = 4.5 V, VDD = −10 V, ID = −1.5 A, RG = 4.7 W 7.0 14 13 4.0 12 25 25 8.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = −10 V; ID = −3.0 A VGS = 0 V, f = 1 MHz, VDS = −15 V 345 150 40 3.25 0.3 0.6 1.4 6.0 nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 5. Switching characteristics are independent of operating junction temperatures 6. Pulse Test: pulse width = 300 ms, duty cycle = 2% http://onsemi.com 2 NTGS3441P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 20 −4 V −ID, DRAIN CURRENT (AMPS) 16 VGS = −10 V to −4.5 V −3.5 V −ID, DRAIN CURRENT (AMPS) 16 20 VDS ≥ −10 V TJ = 25°C TJ = 100°C TJ = −55°C 12 TJ = 25°C −3 V 12 8 −2.5 V 4 −2 V 0 0 1 2 3 4 5 6 7 8 −1.9 V 9 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 8 4 0 1 2 3 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.24 ID = −1.5 A TJ = 25°C 0.18 0.30 Figure 2. Transfer Characteristics TJ = 25°C 0.27 VGS = −2.5 V 0.24 0.21 0.18 0.15 0.12 0.09 0.06 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 VGS = −4.5 V 0.12 0.06 1 2 3 4 5 6 7 8 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 −50 1 −25 0 25 50 75 100 125 150 ID = −1.5 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 100 1000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 125°C 10 TJ = 100°C 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTGS3441P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 0 V TJ = 25°C −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 600 5 QT 4 VGS 20 −VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 16 400 Ciss 3 VDS QGS QGD 12 2 8 200 Coss Crss 0 0 4 8 12 16 20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 0 0 0.5 1 1.5 2 2.5 ID = −3.0 A TJ = 25°C 3 4 0 3.5 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 −IS, SOURCE CURRENT (AMPS) 100 VDD = −10 V ID = −1.5 A VGS = −4.5 V t, TIME (ns) tr td(off) td(on) tf VGS = 0 V TJ = 25°C 8 6 10 4 2 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.4 0.6 0.8 1 1.2 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTGS3441P PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 A L 6 5 1 2 4 3 S B D G M 0.05 (0.002) H C K J SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTGS3441P ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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