NTGS3441T1_06

NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 Features http://onsemi.com • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 1 AMPERE 20 VOLTS RDS(on) = 90 mW P−Channel 1256 Applications • Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds Symbol VDSS VGS RqJA Pd ID IDM RqJA Pd ID IDM RqJA Pd ID IDM TJ, Tstg TL Value −20 "8.0 244 0.5 −1.65 −10 128 1.0 −2.35 −14 62.5 2.0 −3.3 −20 − 55 to 150 260 Unit V V °C/W W A A °C/W W A A °C/W W A A °C °C 1 TSOP−6 CASE 318G STYLE 1 4 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Source 654 PT M G G 123 Drain Drain Gate = Specific Device Code = Date Code* = Pb−Free Package M PT G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, operating to steady state. 2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), operating to steady state. 3. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), t t 5.0 seconds. (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTGS3441T1 NTGS3441T1G Package TSOP−6 Shipping† 3000 / Tape & Reel TSOP−6 3000 / Tape& Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 5 1 Publication Order Number: NTGS3441T1/D NTGS3441T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5) Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = −10 mA) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C) Gate−Body Leakage Current (VGS = −8.0 Vdc, VDS = 0 Vdc) Gate−Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Static Drain−Source On−State Resistance (VGS = −4.5 Vdc, ID = −3.3 Adc) (VGS = −2.5 Vdc, ID = −2.9 Adc) Forward Transconductance (VDS = −10 Vdc, ID = −3.3 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Gate Charge Gate−Source Charge Gate−Drain Charge BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage Diode Forward On−Voltage Reverse Recovery Time (IS = −1.6 Adc, VGS = 0 Vdc) (IS = −3.3 Adc, VGS = 0 Vdc) (IS = −1.6 Adc, dIS/dt = 100 A/ms) VSD VSD trr − − − −0.88 −0.98 30 −1.2 − 60 Vdc Vdc ns (VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc) (VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 W) td(on) tr td(off) tf Qtot Qgs Qgd − − − − − − − 13 23.5 27 24 6.2 1.3 2.5 25 45 50 45 14 − − ns ns ns ns nC nC nC (VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss − − − 480 265 100 − − − pF pF pF VGS(th) RDS(on) −0.45 − − − −1.05 0.069 0.117 6.8 −1.50 0.090 0.135 − Vdc W V(BR)DSS IDSS −20 − − − − − − − − − − −1.0 −5.0 −100 100 Vdc mAdc Symbol Min Typ Max Unit IGSS IGSS nAdc nAdc gFS Mhos 4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS 10 −ID, DRAIN CURRENT (AMPS) 8 6 4 2 VGS = −10 V 0 0 0.4 0.8 1.2 VGS = −1.5 V 1.6 2 TJ = 25°C VGS = −2.7 V −ID, DRAIN CURRENT (AMPS) VGS = −2.5 V VGS = −3 V VGS = −3.5 V VGS = −4 V VGS = −4.5 V VGS = −6 V V 20 16 12 8 4 0 0.4 VDS> = −10 V TJ = 25°C TJ = −55°C TJ = 100°C GS = −2 V 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 0.4 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = −3.3 A TJ = 25°C 0.3 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.28 0.24 0.2 0.16 0.12 0.08 0.04 0 0 Figure 2. Transfer Characteristics TJ = 25°C VGS = −2.5 V 0.2 VGS = −4.5 V 0.1 0 2 3 4 5 6 7 8 4 8 12 16 20 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 125°C 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 ID = −3.3 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 10 1.2 TJ = 100°C 1 1 TJ = 25°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 0.1 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1200 VDS = 0 V Ciss C, CAPACITANCE (pF) 900 VGS = 0 V TJ = 25°C 8 6 QT 4 Qgs 2 Qgd VDD = −20 V ID = −3.3 A TJ = 25°C 600 Crss Ciss 300 Coss Crss 0 8 4 −VGS 0 4 −VDS 8 12 16 20 0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 ID = −250 mA 10 −IS, SOURCE CURRENT (AMPS) 8 6 4 2 0 0.5 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 TJ, JUNCTION TEMPERATURE (°C) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS 20 16 POWER (W) 12 8 4 0 0.01 0.10 1.00 TIME (sec) 10.00 100.00 Figure 11. Single Pulse Power NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1E−03 Single Pulse 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 0.01 1E−04 SQUARE WAVE PULSE DURATION (sec) Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient http://onsemi.com 5 NTGS3441T1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P D HE 6 1 5 2 4 3 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 1 0° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 1 0° b e c L q 0.05 (0.002) A1 A STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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