SMMBT3904WT1G

DATA SHEET www.onsemi.com General Purpose Transistors COLLECTOR 3 NPN and PNP Silicon 1 BASE MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP 2 EMITTER 3 SC−70 (SOT−323) CASE 419 STYLE 3 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. 2 MARKING DIAGRAM Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant xx M G G 1 xx MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 VCEO Collector −Base Voltage MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 VCBO Emitter −Base Voltage MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 VEBO Collector Current − Continuous MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 IC Value Unit Vdc 40 −40 Vdc 60 −40 Vdc 6.0 −5.0 Total Device Dissipation (Note 1) @TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device mAdc 200 −200 THERMAL CHARACTERISTICS Characteristic M G = AM for MMBT3904WT1, SMMBT3904WT = 2A for MMBT3906WT1, SMMBT3906WT1 = Date Code* = Pb−Free Package Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Package Shipping† MMBT3904WT1G, SC−70/ SMMBT3904WT1G SOT−323 (Pb−Free) 3000 / Tape & Reel MMBT3906WT1G, SMMBT3906WT1G 3000 / Tape & Reel SC−70/ SOT−323 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. © Semiconductor Components Industries, LLC, 2015 October, 2022 − Rev. 10 1 Publication Order Number: MMBT3904WT1/D MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 −40 − − 60 −40 − − 6.0 −5.0 − − − − 50 −50 − − 50 −50 40 70 100 60 30 60 80 100 60 30 − − 300 − − − − 300 − − − − − − 0.2 0.3 −0.25 −0.4 0.65 − −0.65 − 0.85 0.95 −0.85 −0.95 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (IC = −1.0 mAdc, IB = 0) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = −10 mAdc, IE = 0) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = −10 mAdc, IC = 0) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) MMBT3904WT1, SMMBT3904WT1 hFE MMBT3906WT1, SMMBT3906WT1 MMBT3904WT1, SMMBT3904WT1 VCE(sat) MMBT3906WT1, SMMBT3906WT1 MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. www.onsemi.com 2 VBE(sat) − Vdc Vdc MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 300 250 − − − − 4.0 4.5 − − 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 Unit SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 fT Cobo Cibo hie hre hfe hoe NF MHz pF pF kW X 10− 4 − mmhos dB − − 5.0 4.0 Min Max Unit 35 35 ns SWITCHING CHARACTERISTICS Characteristic Condition Symbol Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) MMBT3904WT1, SMMBT3904WT1 (VCC = −3.0 Vdc, VBE = 0.5 Vdc) MMBT3906WT1, SMMBT3906WT1 td Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 (IC = −10 mAdc, IB1 = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 tr Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) MMBT3904WT1, SMMBT3904WT1 (VCC = −3.0 Vdc, IC = −10 mAdc) MMBT3906WT1, SMMBT3906WT1 ts Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = −1.0 mAdc) tf MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 www.onsemi.com 3 − − − − − − − − 35 35 200 225 50 75 ns MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms 275 t1 DUTY CYCLE = 2% +3 V +10.9 V 275 10 k 10 k 0 -0.5 V CS < 4 pF* < 1 ns 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit www.onsemi.com 4 CS < 4 pF* MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 500 500 IC/IB = 10 200 100 70 50 tr @ VCC = 3.0 V 30 20 40 V 10 7 5 VCC = 40 V IC/IB = 10 300 15 V MMBT3904WT1 5.0 7.0 10 2.0 3.0 20 50 70 100 30 100 70 50 30 20 10 7 5 2.0 V td @ VOB = 0 V 1.0 t r, RISE TIME (ns) TIME (ns) 300 200 200 MMBT3904WT1 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 3. Turn −On Time 20 50 70 100 30 200 Figure 4. Rise Time 500 500 300 200 IC/IB = 20 t′s = ts - 1/8 tf IB1 = IB2 IC/IB = 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 100 70 50 t f , FALL TIME (ns) t s′ , STORAGE TIME (ns) 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC/IB = 20 IC/IB = 10 30 20 10 7 5 2.0 3.0 5.0 7.0 10 20 50 70 100 30 IC/IB = 10 30 20 10 7 5 MMBT3904WT1 1.0 100 70 50 200 MMBT3904WT1 1.0 2.0 3.0 5.0 7.0 10 20 50 70 100 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time 200 TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 VDC, TA = 25°C, BANDWIDTH = 1.0 HZ) 12 14 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 MMBT3904WT1 4.0 10 20 40 MMBT3904WT1 0 0.1 100 f, FREQUENCY (kHz) 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k OHMS) Figure 7. Noise Figure Figure 8. Noise Figure www.onsemi.com 5 40 100 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 H PARAMETERS (VCE = 10 VDC, F = 1.0 KHZ, TA = 25°C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 100 MMBT3904WT1 h fe , CURRENT GAIN 200 100 70 50 MMBT3904WT1 50 20 10 5 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 10 5.0 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 5.0 Figure 10. Output Admittance Figure 9. Current Gain MMBT3904WT1 10 5.0 2.0 1.0 0.5 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 7.0 MMBT3904WT1 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 Figure 11. Input Impedance 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 12. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 1000 hFE, DC CURRENT GAIN VCE = 1 V TJ = 150°C 25°C -55°C 100 MMBT3904WT1 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 13. DC Current Gain www.onsemi.com 6 1000 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3904WT1, SMMBT3904WT1 1.0 TJ = 25°C MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.1 0.07 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14. Collector Saturation Region 1.4 IC/IB = 10 IC/IB = 10 0.7 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.8 150°C 25°C 0.6 0.5 0.4 −55°C 0.3 0.2 0.1 0 0.001 0.01 0.1 1.2 1.0 25°C 0.6 150°C 0.4 0.2 1 −55°C 0.8 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Collector Emitter Saturation Voltage vs. Collector Current Figure 16. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.9 1.4 VCE = 1 V 1.2 1.0 0.8 0.6 0.4 0.2 −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 17. Base Emitter Voltage vs. Collector Current www.onsemi.com 7 1 1 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 TJ = 25°C TJ = 125°C 1.0 10 MMBT3904WT1 MMBT3904WT1 qVC FOR VCE(sat) 0 CAPACITANCE (pF) COEFFICIENT (mV/ °C) 7.0 +25°C TO +125°C 0.5 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 Cobo qVB FOR VBE(sat) -1.5 0 20 40 60 80 100 120 140 1.0 0.1 180 200 160 0.5 0.7 1.0 5.0 7.0 10 Figure 18. Temperature Coefficients Figure 19. Capacitance 1 IC, COLLECTOR CURRENT (A) 100 0.1 2.0 3.0 REVERSE BIAS VOLTAGE (VOLTS) VCE = 1 V TA = 25°C 10 0.2 0.3 IC, COLLECTOR CURRENT (mA) 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) Cibo 3.0 2.0 +25°C TO +125°C -2.0 5.0 1 10 100 1000 20 30 40 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 0.001 0.1 1 10 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 20. Current Gain Bandwidth Product vs. Collector Current Figure 21. Safe Operating Area www.onsemi.com 8 100 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k 10 k 0 CS < 4 pF* +10.6 V 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% CS < 4 pF* 1N916 DUTY CYCLE = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 22. Delay and Rise Time Equivalent Test Circuit Figure 23. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 500 500 300 200 IC/IB = 10 MMBT3906WT1 MMBT3906WT1 300 200 VCC = 40 V IB1 = IB2 t f , FALL TIME (ns) IC/IB = 20 TIME (ns) 100 70 50 tr @ VCC = 3.0 V 30 20 10 7 5 15 V 40 V 2.0 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 70 50 200 IC/IB = 10 30 20 10 7 5 td @ VOB = 0 V 1.0 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 24. Turn −On Time Figure 25. Fall Time TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = −5.0 VDC, TA = 25°C, BANDWIDTH = 1.0 HZ) NF, NOISE FIGURE (dB) 4.0 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 1.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) IC = 1.0 mA 10 NF, NOISE FIGURE (dB) 5.0 IC = 0.5 mA 8.0 6.0 4.0 IC = 50 mA 2.0 IC = 100 mA MMBT3906WT1 20 40 MMBT3906WT1 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 RS, SOURCE RESISTANCE (kW) Figure 26. Figure 27. www.onsemi.com 9 20 40 100 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 H PARAMETERS (VCE = −10 VDC, F = 1.0 KHZ, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 MMBT3906WT1 hfe , CURRENT GAIN 200 100 70 50 70 MMBT3906WT1 50 30 20 10 7.0 5.0 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 Figure 28. Current Gain 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) MMBT3906WT1 10 h ie , INPUT IMPEDANCE (k Ω) 5.0 7.0 Figure 29. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 MMBT3906WT1 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 30. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 31. Voltage Feedback Ratio STATIC CHARACTERISTICS 1000 hFE, DC CURRENT GAIN VCE = 1 V TJ = 150°C 25°C 100 -55°C MMBT3906WT1 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 32. DC Current Gain www.onsemi.com 10 1000 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3906WT1, SMMBT3906WT1 1.0 TJ = 25°C MMBT3906WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.1 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 33. Collector Saturation Region 1.4 IC/IB = 10 IC/IB = 10 150°C 0.40 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.45 0.35 25°C 0.30 0.25 −55°C 0.20 0.15 0.10 0.05 0 0.001 0.01 0.1 1 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 34. Collector Emitter Saturation Voltage vs. Collector Current Figure 35. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.50 1.4 VCE = 1 V 1.2 1.0 0.8 −55°C 25°C 0.6 0.4 0.2 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 36. Base Emitter Voltage vs. Collector Current www.onsemi.com 11 1 1 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 10 1.0 MMBT3906WT1 7.0 0.5 qVC FOR VCE(sat) +25°C TO +125°C CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C TJ = 125°C -55°C TO +25°C 0 -0.5 MMBT3906WT1 +25°C TO +125°C -1.0 qVS FOR VBE(sat) -55°C TO +25°C 5.0 Cobo Cibo 3.0 2.0 -1.5 -2.0 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 1.0 0.1 180 200 160 1 IC, COLLECTOR CURRENT (A) VCE = 1 V TA = 25°C 100 0.1 1 10 2.0 3.0 5.0 7.0 10 20 30 40 Figure 38. Capacitance 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 0.5 0.7 1.0 REVERSE BIAS VOLTAGE (VOLTS) Figure 37. Temperature Coefficients 10 0.2 0.3 100 1000 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 0.001 0.1 1 10 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Current Gain Bandwidth Product vs. Collector Current Figure 40. Safe Operating Area www.onsemi.com 12 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. 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