MMBT4401L, SMMBT4401L
Switching Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
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Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
ICM
900
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
Collector Current − Peak
2
EMITTER
3
1
SOT−23 (TO−236)
CASE 318
STYLE 6
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAM
PD
RqJA
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2X M G
G
1
2X = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBT4401LT1G
SMMBT4401LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBT4401LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 11
1
Publication Order Number:
MMBT4401LT1/D
MMBT4401L, SMMBT4401L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
−
0.1
mAdc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
−
0.1
mAdc
20
40
80
100
40
−
−
−
300
−
−
−
−
0.4
0.75
0.75
−
0.95
1.2
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector −Emitter Saturation Voltage
VCE(sat)
Vdc
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
VBE(sat)
Vdc
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
250
−
MHz
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
6.5
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
kW
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10− 4
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
−
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mmhos
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
tr
−
20
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
30
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
+16 V
0
-2.0 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200 W
+16 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200 W
0
1.0 kW
< 2.0 ns
1.0 kW
-14 V
CS* < 10 pF
< 20 ns
-4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
CS* < 10 pF
MMBT4401L, SMMBT4401L
TRANSIENT CHARACTERISTICS
25°C
10
7.0
5.0
100°C
VCC = 30 V
IC/IB = 10
Q, CHARGE (nC)
3.0
QT
2.0
1.0
0.7
0.5
0.3
0.2
QA
0.1
10
20
200
50 70 100
30
IC, COLLECTOR CURRENT (mA)
300
500
Figure 3. Charge Data
100
100
IC/IB = 10
70
VCC = 30 V
IC/IB = 10
70
tr
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
30
20
t, TIME (ns)
t, TIME (ns)
50
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Turn−On Time
Figure 5. Rise and Fall Times
300
300
500
100
ts′ = ts - 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
70
50
t f , FALL TIME (ns)
200
t s′, STORAGE TIME (ns)
tf
30
100
70
IC/IB = 20
30
20
IC/IB = 10
10
50
7.0
30
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
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3
300
500
MMBT4401L, SMMBT4401L
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
IC = 1.0 mA, RS = 150 W
IC = 500 mA, RS = 200 W
IC = 100 mA, RS = 2.0 kW
IC = 50 mA, RS = 4.0 kW
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
f = 1.0 kHz
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
6.0
4.0
2.0
IC = 50 mA
IC = 100 mA
IC = 500 mA
IC = 1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
0
10
20
50
100
50
100 200
Figure 8. Frequency Effects
500 1.0k 2.0k 5.0k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
50k 100k
Figure 9. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
hie , INPUT IMPEDANCE (OHMS)
50k
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
20k
10k
5.0k
2.0k
1.0k
500
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 10. Input Impedance
100
hoe, OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
10
7.0
5.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
50
20
10
2.0
1.0
0.1
5.0 7.0 10
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
5.0
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Voltage Feedback Ratio
Figure 12. Output Admittance
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4
5.0 7.0 10
MMBT4401L, SMMBT4401L
STATIC CHARACTERISTICS
500
450
h FE, DC CURRENT GAIN
400
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
TJ = 150°C
350
300
25°C
250
200
-55°C
150
100
50
0
1
0.1
IC, COLLECTOR CURRENT (A)
0.01
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.2
1.0
0.8
IC = 1.0 mA
100 mA
10 mA
300 mA
500 mA
0.6
0.4
0.2
0
0.001
0.01
0.1
1
100
10
IB, BASE CURRENT (mA)
0.35
+0.5
IC/IB = 10
0.30
0
COEFFICIENT (mV/ °C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Figure 14. Collector Saturation Region
0.25
150°C
0.20
25°C
0.15
0.10
-55°C
0
0.1
0.001
0.01
IC, COLLECTOR CURRENT (A)
-0.5
-1.0
-1.5
-2.0
0.05
0.0001
qVC for VCE(sat)
-2.5
0.1 0.2
1
Figure 15. Collector−Emitter Saturation
Voltage vs. Collector Current
qVB for VBE
0.5
50
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
100 200
Figure 16. Temperature Coefficients
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5
500
MMBT4401L, SMMBT4401L
STATIC CHARACTERISTICS
1.0
IC/IB = 10
VBE(on), BASE−EMITTER TURN ON
VOLTAGE (V)
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
1.1
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
VCE = 2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.3
0.0001
0.001
0.01
0.1
0.0001
1
IC, COLLECTOR CURRENT (A)
1
0.1
Figure 18. Base−Emitter Turn On Voltage vs.
Collector Current
8.5
Cobo, OUTPUT CAPACITANCE (pF)
21
Cibo, INPUT CAPACITANCE (pF)
0.01
IC, COLLECTOR CURRENT (A)
Figure 17. Base−Emitter Saturation Voltage vs.
Collector Current
19
17
15
13
11
7.5
6.5
5.5
4.5
3.5
2.5
1.5
9
0
1
2
3
4
0
6
5
5
Veb, EMITTER BASE VOLTAGE (V)
fT, CURRENT−GAIN−BANDWIDTH (MHz)
10 msec
1 sec
0.01
0.001
1
15
20
25
30
35
40
50
45
Figure 20. Output Capacitance vs. Collector
Base Voltage
1
0.1
10
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 19. Input Capacitance vs. Emitter Base
Voltage
IC, COLLECTOR CURRENT (A)
0.001
10
100
1000
VCE = 1.0 V
TA = 25°C
100
10
0.1
1
10
100
1000
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 21. Safe Operating Area
Figure 22. Current−Gain−Bandwidth Product
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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