FCAB21490L1

Doc No. TT4-ZZ-02013 Revision. 1 Product Standards MOS FET FCAB21490L1 FCAB21490L1 Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits  Features  Source-source ON resistance:RSS(on) typ. = 2.2 m（VGS = 3.8 V)  CSP(Chip Size Package)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1)  Marking Symbol: 7F  Packaging Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Source-source Voltage Gate-source Voltage Source Current Total Power Dissipation Channel Temperature Storage Temperature Range Note DC *1 DC *2 Pulse *3 DC *1 DC *2 VSS VGS IS1 IS2 ISp PD1 PD2 Tch Tstg Rating Unit 12 8 13.5 29 135 0.54 3.5 150 -55 to +150 V V A A A W W C C *1 Mounted on FR4 board ( 25.4 mm  25.4 mm  t1.0 mm ) using the minimum recommended pad size (36m Copper ). *2 Mounted on Ceramic substrate (70 mm  70 mm  t1.0 mm). *3 t = 10 s, Duty Cycle  1 % 1,2,4,5. Source1(FET1) 6,7,9,10. Source2(FET2) Panasonic JEITA Code 3. Gate1 (FET1) 8. Gate2 (FET2) TCSP1530011-N1 ― ― Equivalent circuit 6,7,9,10(S2) 8(G2) 1,2,4,5(S1) 3(G1) FET2 FET1 Page 1 of 5 Established : 2016-11-09 Revised : ####-##-## Doc No. TT4-ZZ-02013 Revision. 1 Product Standards MOS FET FCAB21490L1  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Source-source Breakdown Voltage Zero Gate Voltage Source Current VSSS ISSS Gate-source Leakage Current IGSS Gate-source Threshold Voltage Source-source On-state Resistance Body Diode Forward Voltage Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance *1 Turn-on delay Time *1,*2 Rise Time *1,*2 Turn-off delay Time *1,*2 Fall Time *1,*2 Total Gate Charge *1 Gate-source Charge *1 Gate-drain Charge *1 Note Conditions Min IS = 1.0 mA, VGS = 0 V VSS = 12 V, VGS = 0 V VGS = 8 V, VSS = 0 V VGS = 5 V, VSS = 0 V IS = 1.11 mA, VSS = 10 V IS = 6.0 A, VGS = 4.5 V IS = 6.0 A, VGS = 3.8 V IS = 6.0 A, VGS = 3.1 V IS = 6.0 A, VGS = 2.5 V IF = 6.0 A, VGS = 0 V Vth RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 VF(s-s) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Typ Max Unit V A 12 0.35 0.90 1.55 2.1 1.6 2.2 1.65 2.4 1.9 3.1 0.6 3570 460 410 0.7 1.5 6.7 4.1 25 12 6 VSS = 10 V, VGS = 0 V, f = 1 kHz VDD = 6.0 V, VGS = 0 to 4.0 V IS = 6.0 A VDD = 6.0 V, VGS = 4.0 to 0 V IS = 6.0 A VDD = 6.0 V VGS = 0 to 4.0 V, IS = 6.0 A 1.0 10 1.0 1.4 2.75 2.85 3.95 6.1 1.2 A V m V pF s s nC Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Note2:Measurement circuit VDD = 6.0 V IS = 6.0 A RL = 1  Vout S2 90 % Vin 10 % Rg G2 90 % G1 Vin 4.0 V 90 % Vout Rg 10 % 10 %   0V PW = 10 s D.C. 1 % S1 td(on) tr td(off) tf Page 2 of 5 Established : 2016-11-09 Revised : ####-##-## Doc No. TT4-ZZ-02013 Revision. 1 Product Standards MOS FET FCAB21490L1 IS - VSS 4.0 ※Pulse measurement 10 VGS = 4.5 V 3.8 V 8 3.1 V 6 2.5 V 4 ※Pulse measurement Source-Source On-resistance RSS(on) ( mΩ ) Source Current , IS ( A ) 12 RSS(on) - IS 2 3.5 3.0 2.5 V 3.1 V 2.5 3.8 V 2.0 VGS = 4.5 V 1.5 0 0 1 0.01 0.02 0.03 0.04 0.05 Source-source Voltage , VSS(V) 2 3 IS - VGS 6 7 8 Source-source On-resistance RSS(on) ( mΩ ) 12 85 ºC 25 ºC 0.1 －40 ℃ ※Pulse measurement 0.01 0 10 0.5 1 8 6 25 ºC 4 85 ºC 2 －40 ℃ 0.5 1.5 1.5 2.5 3.5 4.5 5.5 6.5 Gate-source Voltage , VGS ( V ) IF - VF IGS - VGS 1 25 ºC - 40 ºC 0.01 0.2 0.4 7.5 1.E-04 85 ºC 0 IS = 6. A Gate-source Voltage , VGS( V ) ※Pulse measurement 0.1 ※Pulse measurement 10 0 Gate-source Leakage Current IGS ( A ) Source Current , IS ( A ) 5 RSS(on) - VGS 1 Diode Forward Current , IF ( A ) 4 Source Current , IS ( A ) 0.6 0.8 Body Diode Forward Voltage , VF ( V ) 85 ºC 1.E-05 25 ºC 1.E-06 - 40 ºC 1.E-07 1.E-08 ※Pulse measurement 1.E-09 0 5 10 15 Gate-source Voltage , VGS ( V ) Page 3 of 5 Established : 2016-11-09 Revised : ####-##-## Doc No. TT4-ZZ-02013 Revision. 1 Product Standards MOS FET FCAB21490L1 Dynamic Input / Output Characteristics 1.E-03 Gate-source Voltage , VGS ( V ) Zero Gate Voltage Source Current ISS ( A ) ISS - VSS ※Pulse measurement 1.E-04 1.E-05 85 ºC 1.E-06 1.E-07 25 ºC 1.E-08 1.E-09 - 40 ºC 1.E-10 0 5 10 15 4.0 VDD = 6.0 V IS = 6.0 A 3.0 2.0 1.0 0.0 20 0 Source-source Voltage , VSS ( V ) 5 10 15 20 25 Gate Charge , Qg ( nC ) Normalized Effective Transient Thermal Impedance Safe Operating Area 1000 1000 (A) 100 (B) 10 1 Ta=25 ºC (A) Mounted on FR4 board (25.4 mm×25.4 mm×t1.0 mm). using the minimum recommended pad size (36 m Copper) . (B) Mounted on Ceramic substrate (70 mm×70 mm×t1.0 mm). 0.1 0.001 0.01 Source Current, IS ( A ) Thermal Resistance , Rth ( ºC / W ) Rth - tsw 30 100 1 ms 3 ms 10 11 ms 100 ms 1 DC 0.1 0.01 0.1 1 10 100 1000 Pulse Width , tsw ( s ) limited by RSS(on) (VGS = 3.8 V) Absolute Maximum 1s Ta = 25 ºC, Mounted on FR4 board (25.4 mm×25.4 mm×t1.0 mm). using the minimum recommended pad size(36 m Copper) . 0.1 1 10 100 Source-source Voltage , VSS ( V ) Thermal Response 10 1 Ta = 25 ºC, Mounted on FR4 board (25.4 mm×25.4 mm×t1.0 mm). using the minimum recommended pad size(36 m Copper) . Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration ( s ) Page 4 of 5 Established : 2016-11-09 Revised : ####-##-## Doc No. TT4-ZZ-02013 Revision. 1 Product Standards MOS FET FCAB21490L1  Outline  Land Pattern (Reference) Unit: mm Unit: mm Page 5 of 5 Established : 2016-11-09 Revised : ####-##-## Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. 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