UPC2776TB_1

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Supply voltage • Circuit current • Power gain • Medium output power • Port impedance : VCC = 4.5 to 5.5 V : ICC = 25 mA TYP. @VCC = 5.0 V : GP = 23 dB TYP. @f = 1 GHz : PO(1 dB) = +6.5 dBm @f = 1 GHz : input/output 50 Ω • Upper limit operating frequency : fu = 2.7 GHz TYP. @3 dB bandwidth • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • Systems required wideband operation from HF to 2.0 GHz ORDERING INFORMATION Part Number Package 6-pin super minimold Marking C2L Supplying Form • Embossed tape 8 mm wide • 1, 2, 3 pins face the perforation side of the tape • Qty 3 kpcs/reel µPC2776TB-E3 Remark To order evaluation samples, please contact your local NEC sales office. Part number for sample order: µPC2776TB Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12680EJ3V0DS00 (3rd edition) Date Published February 2001 N CP(K) Printed in Japan The mark shows major revised points. © 1997, 2001 µPC2776TB PIN CONNECTIONS Pin No. (Top View) 3 2 1 (Bottom View) 4 5 6 4 5 6 3 Pin name INPUT GND GND OUTPUT GND VCC 1 2 3 2 1 C2L 4 5 6 PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Part No. fu (GHz) 2.7 PO(1 dB) (dBm) +6.5 PO(sat) (dBm) +8.5 GP (dB) 23 NF (dB) 6.0 @f = 1 GHz 6.5 @f = 1 GHz 5 @f = 1 GHz 3.5 @f = 0.5 GHz ICC (mA) 25 6-pin super minimold 6-pin minimold 26 6-pin super minimold 6-pin minimold 25 6-pin super minimold 6-pin minimold 22 6-pin super minimold C1F C1E C1D Package 6-pin minimold C2L Marking µPC2776T µPC2776TB µPC2708T µPC2708TB µPC2709T µPC2709TB µPC2710T µPC2710TB 2.9 − +10.0 15 2.3 +9.0 +11.5 23 1.0 − +13.5 33 Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. To know the associated product, please refer to each latest data sheet. Caution The package size distinguishes between minimold and super minimold. 2 Data Sheet P12680EJ3V0DS µPC2776TB PIN EXPLANATION Pin Voltage (V) Note Pin No. 1 Pin Name Applied Voltage (V) – Function and Applications Internal Equivalent Circuit INPUT 1.03 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. 6 4 2 3 5 GND 0 – 1 4 OUTPUT Voltage as same as VCC through external inductor 4.5 to 5.5 – 3 2 5 6 VCC – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 5.0 V Data Sheet P12680EJ3V0DS 3 µPC2776TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Circuit Current Power Dissipation Symbol VCC ICC PD Conditions TA = +25°C, pin 4 and pin 6 TA = +25°C Mounted on double-sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C Ratings 6 60 270 Unit V mA mW Operating Ambient Temperature Storage Temperature Input Power TA Tstg Pin TA = +25°C −40 to +85 −55 to +150 +10 °C °C dBm RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol VCC MIN. 4.5 TYP. 5.0 MAX. 5.5 Unit V Remark The same voltage should be applied to pin 4 and pin 6. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Circuit Current Power Gain Gain 1 dB Compression Output Power Noise Figure Upper Limit Operating Frequency Symbol ICC GP PO(1dB) No signal f = 1 GHz f = 1 GHz Test Conditions MIN. 18 21 +4.0 − 2.3 TYP. 25 23 +6.5 MAX. 33 26 − 7.5 − − − − − − Unit mA dB dBm NF fu f = 1 GHz 3 dB down below from gain at f = 0.1 GHz f = 1 GHz f = 1 GHz f = 1 GHz f = 1 GHz f = 0.1 to 2.0 GHz 6.0 2.7 dB GHz Isolation Input Return Loss Output Return Loss Saturated Output Power Gain Flatness ISL RLin RLout PO(sat) ∆GP 27 4.5 15 − − 32 7.5 20 +8.5 ±1.0 dB dB dB dBm dB 4 Data Sheet P12680EJ3V0DS µPC2776TB TEST CIRCUIT VCC 1 000 pF C3 6 50 Ω IN 1 000 pF C1 1 4 L C2 1 000 pF 50 Ω OUT 2, 3, 5 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 C3 L Bias Tee Capacitor Bias Tee Value 1 000 pF 1 000 pF 1 000 nH EXAMPLE OF ACTUAL APPLICATION COMPONENTS Type C1 to C3 L Chip capacitor Chip inductor Value 1 000 pF 300 nH 100 nH 10 nH Operating Frequency 100 MHz or higher 10 MHz or higher 100 MHz or higher 1.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get enough gain. In this case, large inductance and Q is suitable. For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a peak in the operating frequency band, and suppressed at lower frequencies. The recommendable inductance can be chosen from example of actual application components list as shown above. CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias can be supplied against Vcc fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2πRfc). Data Sheet P12680EJ3V0DS 5 µPC2776TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 Top View 3 1 IN → 5 4 OUT C L 2 C 2L C Mounting direction VCC C COMPONENT LIST Value C L 1 000 pF 300 nH 6 Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATIONS OF 6-PIN SUPER MINI-MOLD SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P13252E). 6 Data Sheet P12680EJ3V0DS µPC2776TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 No Signal 35 Circuit Current ICC (mA) Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 40 35 30 25 20 15 10 5 No signal VCC = 5.0 V 30 25 20 15 10 5 0 0 1 4 3 2 Supply Voltage VCC (V) 5 6 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (°C) NOISE FIGURE, POWER GAIN vs. FREQUENCY 9 25 GP VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V 15 NF 10 VCC = 4.5 V 5 5 0.1 0.3 1.0 Frequency f (GHz) 3.0 10 0.1 VCC = 5.5 V VCC = 5.0 V Power Gain GP (dB) POWER GAIN vs. FREQUENCY 30 TA = –40°C VCC = 5.0 V TA = +25°C Noise Figure NF (dB) Power Gain GP (dB) 8 20 25 7 20 TA = +85°C 6 15 1.0 0.3 Frequency f (GHz) 3.0 ISOLATION vs. FREQUENCY 0 VCC = 5.0 V INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 Input Return Loss RLin (dB) Output Return Loss RLout (dB) VCC = 5.0 V RLin –10 Isolation ISL (dB) –10 –20 –20 RLout –30 –30 –40 –40 –50 0.1 0.3 1.0 Frequency f (GHz) 3.0 –50 0.1 0.3 1.0 Frequency f (GHz) 3.0 Data Sheet P12680EJ3V0DS 7 µPC2776TB OUTPUT POWER vs. INPUT POWER +15 +10 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +15 f = 1.0 GHz VCC = 5.0 V TA = +85°C TA = +25°C f = 1.0 GHz VCC = 5.5 V VCC = 5.0 V Output Power Pout (dBm) +10 +5 0 –5 –10 –15 +5 0 –5 –10 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 Input Power Pin (dBm) +5 +10 VCC = 4.5 V TA = –40°C –20 0 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) +5 +10 OUTPUT POWER vs. INPUT POWER +15 f = 2.0 GHz +10 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +15 VCC = 5.0 V f = 1.0 GHz VCC = 5.0 V Output Power Pout (dBm) +10 +5 0 –5 –10 –15 f = 2.0 GHz VCC = 5.5 V +5 0 –5 –10 –15 –20 0 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) VCC = 4.5 V +5 +10 –20 0 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) +5 +10 SATURATED OUTPUT POWER vs. FREQUENCY 3rd Order Intermodulation Distortion IM3 (dBc) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –60 f1 = 1 000 MHz f2 = 1 002 MHz VCC = 5.5 V –40 VCC = 5.0 V –30 VCC = 4.5 V –20 +20 Saturated Output Power PO(sat) (dBm) +18 +16 +14 +12 +10 +8 +6 +4 +2 0 0.1 VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V –50 0.3 1.0 Frequency f (GHz) 3.0 –10 –10 –8 –6 –4 –2 0 +2 +4 +6 +8 +10 Output Power of Each Tone PO(each) (dBm) 8 Data Sheet P12680EJ3V0DS µPC2776TB S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V) S11- FREQUENCY 0.1 G 1.0 G 3.0 G 2.0 G S22- FREQUENCY 3.0 G 1.0 G 0.1 G 2.0 G Data Sheet P12680EJ3V0DS 9 µPC2776TB TYPICAL S-PARAMETER VALUES (TA = +25°C) VCC = Vout = 5.0 V, ICC = 27 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 S11 MAG. 0.226 0.240 0.254 0.267 0.285 0.308 0.345 0.386 0.425 0.449 0.466 0.478 0.507 0.533 0.564 0.568 0.576 0.571 0.570 0.569 0.564 0.548 0.535 0.516 0.515 0.508 0.503 0.489 0.471 0.457 0.455 ANG. 2.8 6.4 10.4 11.4 11.1 8.5 6.1 3.9 1.4 –1.5 –6.1 –12.0 –17.7 –24.7 –30.3 –36.4 –42.0 –48.5 –54.5 –59.7 –64.2 –69.6 –75.5 –81.8 –87.0 –90.9 –94.8 –97.6 –101.3 –106.7 –111.3 MAG. 13.844 13.862 13.942 14.123 14.267 14.423 14.670 14.864 15.210 15.455 15.564 15.550 15.622 15.577 15.527 15.285 14.960 14.570 14.026 13.715 13.283 12.926 12.515 12.093 11.498 11.136 10.511 10.126 9.850 9.242 9.065 S21 ANG. –5.9 –12.5 –18.6 –25.2 –31.8 –38.6 –45.5 –52.8 –60.1 –68.4 –76.6 –84.9 –93.1 –101.3 –110.6 –119.0 –127.8 –136.4 –144.7 –151.7 –159.8 –167.5 –174.8 177.9 170.1 163.1 156.6 148.3 143.2 135.5 128.9 MAG. 0.029 0.029 0.028 0.029 0.029 0.029 0.030 0.030 0.031 0.030 0.030 0.030 0.030 0.029 0.029 0.027 0.026 0.024 0.023 0.022 0.020 0.018 0.018 0.016 0.017 0.015 0.015 0.018 0.019 0.022 0.026 S12 ANG. –1.5 0.3 3.2 4.8 7.2 9.3 10.7 11.0 11.9 11.8 10.6 11.7 13.4 13.2 13.5 11.3 12.6 14.8 15.8 18.2 23.5 27.1 36.3 41.9 53.3 64.3 67.9 85.0 93.7 100.0 108.0 MAG. 0.032 0.024 0.030 0.031 0.037 0.038 0.040 0.043 0.055 0.072 0.084 0.093 0.094 0.114 0.130 0.154 0.167 0.179 0.194 0.212 0.228 0.240 0.251 0.268 0.279 0.296 0.306 0.315 0.330 0.343 0.357 S22 ANG. –177.4 –171.9 –176.3 –167.6 –167.3 –159.3 –160.7 –161.9 –169.0 –169.1 –169.1 –173.6 177.9 167.0 164.1 158.0 152.6 143.0 135.2 128.1 121.6 115.9 108.1 102.4 96.0 90.8 86.7 79.2 73.0 67.0 60.7 1.39 1.39 1.40 1.36 1.33 1.28 1.22 1.18 1.12 1.10 1.08 1.07 1.05 1.05 1.02 1.07 1.09 1.18 1.27 1.35 1.48 1.66 1.75 2.01 1.99 2.22 2.29 2.00 1.96 1.81 1.53 K 10 Data Sheet P12680EJ3V0DS µPC2776TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 Data Sheet P12680EJ3V0DS 11 µPC2776TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input pin and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: NoneNote Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: NoneNote Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: NoneNote Pin temperature: 300°C or below Time: 3 seconds or less (per side of device) Exposure limit: NoneNote Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 12 Data Sheet P12680EJ3V0DS µPC2776TB [MEMO] Data Sheet P12680EJ3V0DS 13 µPC2776TB [MEMO] 14 Data Sheet P12680EJ3V0DS µPC2776TB [MEMO] Data Sheet P12680EJ3V0DS 15 µPC2776TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is current as of February, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4