UPC8163TB-E3

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8163TB SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE DESCRIPTION The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package. The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • • • • • Recommended operating frequency Supply voltage High-density surface mounting Higher IP3 Minimized carrier leakage : fRFout = 0.8 GHz to 2.0 GHz, fIFin = 50 MHz to 300 MHz : VCC = 2.7 to 3.3 V : 6-pin super minimold package : OIP3 = +9.5 dBm @ fRFout = 830 MHz : Due to double balanced mixer APPLICATIONS • Digital cellular phones ORDERING INFORMATION Part Number Package Supplying Form Embossed tape 8 mm wide. Pin 1, 2, 3 face to tape perforation side. Qty 3 kp/reel µPC8163TB-E3 6-pin super minimold Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8163TB) Caution Electro-static sensitive device The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P13636EJ2V0DS00 (2nd edition) Date Published June 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1998, 1999 µPC8163TB PIN CONNECTIONS (Top View) 3 (Bottom View) 4 4 3 Pin No. 1 2 3 4 Pin Name IFinput GND LOinput GND VCC RFoutput 2 C2Y 5 5 2 1 6 6 1 5 6 SERIES PRODUCTS (TA = +25°C, VCC = VRFout = 3.0 V, ZL = ZS = 50 Ω ) Type Part No. VCC (V) 2.7 to 5.5 2.7 to 5.5 2.7 to 3.3 ICC (mA) 9 CG1 (dB) 9 CG2 (dB) 7 PO(sat) 1 (dBm) –2 PO(sat) 2 (dBm) –4 OIP31 (dBm) +5.5 OIP32 (dBm) +2.0 High IP3 µPC8106TB µPC8109TB µPC8163TB Low Power Consumption 5 6 4 –5.5 –7.5 +1.5 –1.0 Higher IP3 16.5 9 5.5 0.5 –2 +9.5 +6.0 Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTERISTICS for the test conditions. BLOCK DIAGRAM (FOR THE µPC8163TB) (Top View) LOinput GND GND VCC IFinput RFoutput 2 Data Sheet P13636EJ2V0DS00 µPC8163TB SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM) RX DEMO. I Q VCO SW ÷N PLL PLL I 0˚ TX PA Phase shifter 90˚ µPC8163TB Q Data Sheet P13636EJ2V0DS00 3 µPC8163TB PIN EXPLANATION Applied Voltage V  Pin Voltage V Note Pin No. 1 Pin Name IFinput Function and Explanation Equivalent Circuit 1.2 This pin is IF input to double balanced mixer (DBM). The input is designed as high impedance. The circuit contributes to suppress spurious signal. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. For above reason, double balanced mixer is adopted. GND pin. Ground pattern on the board should be formed as wide as possible. Track Length should be kept as short as possible to minimize ground impedance. Local input pin. Recommendable input level is –10 to 0 dBm. Supply voltage pin. This pin is RF output from DBM. This pin is designed as open collector. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. 3 5 6 2 4 GND 0  1 3 LOinput  2.1   5 6 VCC RFoutput 2.7 to 3.3 Same bias as VCC through external inductor 2 Note Each pin voltage is measured with VCC = VRFout = 3.0 V. 4 Data Sheet P13636EJ2V0DS00 µPC8163TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Power Dissipation of Package Symbol VCC PD Test Conditions TA = +25°C, Pin 5 and 6 Mounted on double-sided copperclad 50 × 50 × 1.6 mm epoxy glass PWB TA = +85°C Rating 3.6 200 Unit V mW Operating Ambient Temperature Storage Temperature Maximum Input Power TA Tstg Pin −40 to +85 −55 to +150 +10 °C °C dBm RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Symbol VCC Test Conditions The same voltage should be applied to pin 5 and 6 MIN. 2.7 −40 Zs = 50 Ω (without matching) With external matching circuit –10 0.8 50 TYP. 3.0 MAX. 3.3 Unit V Operating Ambient Temperature Local Input Level RF Output Frequency IF Input Frequency TA PLOin fRFout fIFin +25 –5 – – +85 0 2.0 300 °C dBm GHz MHz ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VRFout = 3.0 V, fIFin = 150 MHz, PLOin = –5 dBm) Parameter Circuit Current Conversion Gain 1 Conversion Gain 2 Maximum RF Output Power 1 Maximum RF Output Power 2 Symbol ICC CG1 CG2 PO(sat) 1 PO(sat) 2 No Signal fRFout = 830 MHz, PIFin = –20 dBm fRFout = 1.9 GHz, PIFin = –20 dBm fRFout = 830 MHz, PIFin = 0 dBm fRFout = 1.9 GHz, PIFin = 0 dBm Conditions MIN. 11.5 6 2.5 –1.5 –4.5 TYP. 16.5 9 5.5 0.5 –2 MAX. 23 12 8.5 – – Unit mA dB dB dBm dBm OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25°C, VCC = VRFout = 3.0 V, PLOin = –5 dBm) Parameter Input Third Order Distortion Intercept Point Output Third-Order Distortion Intercept Point SSB Noise Figure Symbol IIP3 1 IIP3 2 OIP3 1 OIP3 2 SSB NF fIFin1 = 150.0 MHz fIFin2 = 150.4 MHz fIFin1 = 150.0 MHz fIFin2 = 150.4 MHz Conditions fRFout = 830 MHz fRFout = 1.9 GHz fRFout = 830 MHz fRFout = 1.9 GHz Data 0.5 0.5 +9.5 +6.0 12.5 dB dBm Unit dBm fRFout = 830 MHz, fIFin = 150 MHz Data Sheet P13636EJ2V0DS00 5 µPC8163TB TEST CIRCUIT 1 (fRFout = 830 MHz) RF = 830 MHz matched Spectrum Analyzer 50 Ω 1 000 pF 1 pF 10 nH 10 000 pF VCC 1 000 pF PLoin = –5 dBm 6 5 4 RFoutput VCC GND IFinput GND LOinput 1 2 Signal Generator 3 100 pF 50 Ω 100 pF Signal Generator 50 Ω ILLUSTRATION OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD RFOUT 1 000 pF 1 pF IFIN 100 pF 1 000 pF 10 nH nH 10 1 100 pF µ PC8163TB LOIN 10 000 pF EVALUATION BOARD CHARACTERS (1) 35 µm thick double-sided copper clad 35 × 42 × 0.4 mm polyimide board (2) Back side: GND pattern (3) Solder plated patterns (4) { {: Through holes ATTENTION Test circuit or print pattern in this sheet is for testing IC characteristics. In the case of actual system application, external circuits including print pattern and matching circuit constant of output port should be designed in accordance with IC’s S parameters and environmental components. 6 Data Sheet P13636EJ2V0DS00 µPC8163TB TEST CIRCUIT 2 (fRFout = 1.9 GHz) RF = 1.9 GHz matched Spectrum Analyzer 50 Ω 1 000 pF Strip Line 2.5 pF 10 000 pF VCC 1 000 pF PLoin = –5 dBm 100 nH 6 5 4 RFoutput VCC GND IFinput GND LOinput 1 2 Signal Generator 3 100 pF 50 Ω 100 pF Signal Generator 50 Ω ILLUSTRATION OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD 2 pF RFOUT 1 000 pF 0.5 pF IFIN 100 pFpF 100 1 000 pF 100 nH 1 100 pFpF 100 µ PC8163TB LOIN 10 000 pF EVALUATION BOARD CHARACTERS (1) 35 µm thick double-sided copper clad 35 × 42 × 0.4 mm polyimide board (2) Back side: GND pattern (3) Solder plated patterns (4) { {: Through holes Data Sheet P13636EJ2V0DS00 7 µPC8163TB TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified VCC = VRFout) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 25 30 no signals 25 no signals CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE Circuit Current ICC (mA) Circuit Current ICC (mA) 0 1 2 3 Supply Voltage VCC (V) 4 1; 53.422 Ω –14.973 Ω 12.807 pF 830.000 000 MHz 20 20 15 15 10 10 5 5 0 0 –60 –40 –20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) S-PARAMETER FOR MATCHED RF OUTPUT (VCC = VRFout = 3.0 V) − with TEST CIRCUITS 1 and 2 − (monitored at RF connector on board) • RF output matched at 830 MHz CH1 S11 1 U FS [hp] PRm Cor Del MARKER1 830 MHz Hld 1 • RF output matched at 1.9 GHz CH1 S11 1 U FS [hp] PRm Cor Del Smo Hld 2 2; 53.846 Ω –3.7441 Ω 22.373 pF 1 900.000 000 MHz MARKER2 1.9 GHz START 100.000 000 MHz STOP 3 000.000 000 MHz START 100.000 000 MHz STOP 3 000.000 000 MHz CH1 S11 log MAG [hp] PRm Cor Del Hld MARKER1 830 MHz 10 dB/ REF 0 dB 1;–17.331 dB 830.000 000 MHz CH1 S11 log MAG [hp] PRm Cor Del Smo Hld MARKER2 1.9 GHz 10 dB/ REF 0 dB 2;–24.741 dB 1;–.5113 dB 830 MHz 1 900.000 000 MHz 1 1 2 START 100.000 000 MHz STOP 3 000.000 000 MHz START 100.000 000 MHz STOP 3 000.000 000 MHz 8 Data Sheet P13636EJ2V0DS00 µPC8163TB S-PARAMETERS FOR EACH PORT (VCC = VRFout = 3.0 V) LO port S11 Z REF 1.0 Units 1 200.0 mUnits/ 22.676 Ω –77.055 Ω hp C D MARKER 1 1.0 GHz MARKER 2 1.75 GHz C D RF port (no matching) S22 Z REF 1.0 Units 1 200.0 mUnits/ 41.813 Ω –196.16 Ω hp MARKER 1 850.0 MHz MARKER 2 1.9 GHz 1 1 2 2 START STOP 0.100000000 GHz 3.000000000 GHz START STOP 0.100000000 GHz 3.000000000 GHz IF port S11 Z REF 1.0 Units 1 200.0 mUnits/ 463.8 Ω –496.48 Ω hp C D MARKER 1 150.0 GHz 1 START STOP 0.050000000 GHz 1.000000000 GHz Data Sheet P13636EJ2V0DS00 9 µPC8163TB CONVERSION GAIN vs. LO INPUT LEVEL 12 11 10 Conversion Gain CG (dB) Conversion Gain CG (dB) 9 8 7 6 5 4 3 2 1 0 –1 –20 –15 –10 –5 0 fRFout = 830 MHz fIFin = 150 MHz PIFin = –20 dBm 5 10 15 VCC = 2.7 V VCC = 3.0 V VCC = 3.3 V CONVERSION GAIN vs. LO INPUT LEVEL 10 8 6 VCC = 3.0 V 4 2 0 –2 –4 –6 –20 –15 –10 fRFout = 1.9 GHz fIFin = 150 MHz PIFin = –20 dBm –5 0 5 10 15 VCC = 2.7 V VCC = 3.3 V LO Input Level PLOin (dBm) LO Input Level PLOin (dBm) CONVERSION GAIN vs. LO INPUT LEVEL 12 11 10 Conversion Gain CG (dB) Conversion Gain CG (dB) 9 8 7 6 5 4 3 2 1 0 –1 –20 –15 –10 –5 fRFout = 830 MHz fIFin = 150 MHz PIFin = –20 dBm VCC = 3.0 V 0 5 10 15 TA = +85 °C TA = +25 °C TA = –40 °C CONVERSION GAIN vs. LO INPUT LEVEL 10 8 6 4 2 0 –2 –4 –6 –20 –15 –10 –5 0 TA = +25 °C TA = +85 °C TA = –40 °C fRFout = 1.9 GHz fIFin = 150 MHz PIFin = –20 dBm VCC = 3.0 V 5 10 15 LO Input Level PLOin (dBm) LO Input Level PLOin (dBm) 10 Data Sheet P13636EJ2V0DS00 µPC8163TB CONVERSION GAIN vs. IF INPUT FREQUENCY 12 10 8 VCC = 2.7 V 6 4 2 0 fRFout = 830 MHz PIFin = –20 dBm PLOin = –5 dBm 0 50 100 150 200 250 300 VCC = 3.3 V VCC = 3.0 V Conversion Gain CG (dB) CONVERSION GAIN vs. IF INPUT FREQUENCY 12 10 8 VCC = 2.7 to 3.3 V 6 4 2 0 fRFout = 1.9 GHz PIFin = –20 dBm PLOin = –5 dBm 0 50 100 150 200 250 300 Conversion Gain CG (dB) IF Input Frequency fIFin (MHz) IF Input Frequency fIFin (MHz) CONVERSION GAIN vs. IF INPUT FREQUENCY 12 10 8 6 4 2 0 fRFout = 830 MHz PIFin = –20 dBm PLOin = –5 dBm VCC = 3.0 V 0 50 100 150 200 250 300 TA = –40 °C Conversion Gain CG (dB) CONVERSION GAIN vs. IF INPUT FREQUENCY 12 10 8 6 4 2 0 TA = +85 °C fRFout = 1.9 GHz PIFin = –20 dBm PLOin = –5 dBm VCC = 3.0 V 0 50 100 150 200 250 300 Conversion Gain CG (dB) TA = +25 °C TA = +85 °C TA = –40 °C TA = +25 °C IF Input Frequency fIFin (MHz) IF Input Frequency fIFin (MHz) Data Sheet P13636EJ2V0DS00 11 µPC8163TB RF OUTPUT LEVEL vs. IF INPUT LEVEL 5 0 VCC = 3.3 V 5 VCC = 3.3 V 0 VCC = 3.0 V VCC = 2.7 V RF OUTPUT LEVEL vs. IF INPUT LEVEL RF Output Level PRFout (dBm) –5 –10 –15 –20 –25 RF Output Level PRFout (dBm) –5 –10 –15 –20 –25 VCC = 3.0 V VCC = 2.7 V fRFout = 830 MHz fLOin = 980 MHz PLOin = –5 dBm 0 5 10 15 fRFout = 1.9 GHz fLOin = 1.75 GHz PLOin = –5 dBm 0 5 10 15 –30 –30 –25 –20 –15 –10 –5 –30 –30 –25 –20 –15 –10 –5 IF Input Level PIFin (dBm) IF Input Level PIFin (dBm) RF OUTPUT LEVEL vs. IF INPUT LEVEL 5 0 TA = –40 °C 5 RF OUTPUT LEVEL vs. IF INPUT LEVEL TA = –40 °C 0 RF Output Level PRFout (dBm) –5 –10 –15 –20 –25 TA = +25 °C TA = +85 °C RF Output Level PRFout (dBm) –5 –10 –15 –20 –25 TA = +85 °C TA = +85 °C fRFout = 830 MHz fLOin = 980 MHz PLOin = –5 dBm VCC = 3.0 V 0 5 10 15 –30 –30 –25 –20 –15 –10 –5 fRFout = 1.9 GHz fLOin = 1.75 GHz PLOin = –5 dBm VCC = 3.0 V 0 5 10 15 –30 –30 –25 –20 –15 –10 –5 IF Input Level PIFin (dBm) IF Input Level PIFin (dBm) RF OUTPUT LEVEL OF EACH TONE AND IM3 vs. IF INPUT LEVEL RF OUTPUT LEVEL OF EACH TONE AND IM3 vs. IF INPUT LEVEL RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) VCC = 3.3 V 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –30 –20 IM3 fRFout = 830 MHz fIFin1 = 150 MHz fIFin2 = 150.4 MHz fLOin = 980 MHz PLOin = –5 dBm –10 0 10 PRFout VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V VCC = 3.0 V VCC = 2.7 V RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) 10 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –30 –20 IM3 fRFout = 1.9 GHz fIFin1 = 150 MHz fIFin2 = 150.4 MHz fLOin = 1.75 GHz PLOin = –5 dBm –10 0 10 VCC = 2.7 V VCC = 3.0 V VCC = 3.3 V PRFout VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V IF Input Level PIFin (dBm) IF Input Level PIFin (dBm) 12 Data Sheet P13636EJ2V0DS00 µPC8163TB LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY LO Leakage at IF Pin LOif (dBm) LO Leakage at IF Pin LOif (dBm) 0 fRFout = 830 MHz PLOin = –5 dBm –10 –20 VCC = 2.7 V –30 –40 –50 VCC = 3.0 V VCC = 3.3 V 0 fRFout = 1.9 GHz PLOin = –5 dBm –10 –20 VCC = 2.7 V –30 –40 –50 VCC = 3.0 V VCC = 3.3 V 600 800 1000 1200 1600 1800 2000 2200 LO Input Frequency fLOin (MHz) LO Input Frequency fLOin (MHz) LO LEAKAGE AT RF PIN vs. LO INPUT FREQUENCY LO LEAKGE AT RF PIN vs. LO INPUT FREQUENCY LO Leakage at RF Pin LOrf (dBm) LO Leakage at RF Pin LOrf (dBm) 0 –10 –20 –30 –40 –50 VCC = 2.7 V VCC = 3.0 V VCC = 3.3 V fRFout = 830 MHz PLOin = –5 dBm 0 fRFout = 1.9 GHz PLOin = –5 dBm –10 VCC = 2.7 V –20 –30 –40 –50 VCC = 3.0 V VCC = 3.3 V 600 800 1000 1200 1600 1800 2000 2200 LO Input Frequency fLOin (MHz) LO Input Frequency fLOin (MHz) Data Sheet P13636EJ2V0DS00 13 µPC8163TB PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.2 +0.1 –0 0.1 MIN. 0.15 +0.1 –0 1.25±0.1 2.1±0.1 0 to 0.1 0.65 1.3 0.65 0.7 0.9±0.1 2.0±0.2 14 Data Sheet P13636EJ2V0DS00 µPC8163TB NOTE ON CORRECT USE (1) Observe precautions for handling because of electrostatic sensitive devices. (2) Form a ground pattern as wide as possible to keep the minimum ground impedance (to prevent undesired oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Note Count: 3, Exposure limit: None Package peak temperature: 215 °C or below Time: 40 seconds or less (at 200 °C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260 °C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Note Exposure limit: None Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P13636EJ2V0DS00 15 µPC8163TB NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • D escriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8