UPC8179TK-E2

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimold package using same chip as the conventional µPC8179TB in 6-pin super minimold. TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50%. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. FEATURES • Low current consumption • Supply voltage • Excellent isolation : ICC = 4.0 mA TYP. @ VCC = 3.0 V : VCC = 2.4 to 3.3 V : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 16.0 dB TYP. @ f = 2.4 GHz • Gain 1 dB compression output power : PO (1 dB) = +2.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +0.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +0.5 dBm TYP. @ f = 2.4 GHz • Operating frequency • High-density surface mounting • Light weight : 0.1 to 2.4 GHz (Output port LC matching) : 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm) : 3 mg (Standard value) APPLICAION • Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10059EJ02V0DS (2nd edition) Date Published April 2005 CP(K) Printed in Japan The mark shows major revised points.  NEC Compound Semiconductor Devices, Ltd. 2002, 2005 µPC8179TK ORDERING INFORMATION Part Number Order Number Package 6-pin lead-less minimold (1511) (Pb-Free) Note Marking 6C Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel µPC8179TK-E2 µPC8179TK-E2-A Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC8179TK PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Parameter 1.0 GHz output port matching frequency ICC Part No. (mA) 1.9 1.9 4.0 4.0 2.8 4.2 5.6 GP (dB) 11.0 11.0 13.5 13.5 12.5 12.5 23.0 ISL (dB) 39.0 40.0 44.0 43.0 39.0 38.0 40.0 PO (1dB) (dBm) −4.0 −5.5 +3.0 +2.0 −4.0 +2.5 −4.5 1.66 GHz output port matching frequency GP (dB) − − − − 13.0 15.0 19.5 ISL (dB) − − − − 39.0 36.0 38.0 PO (1dB) (dBm) − − − − −4.0 +1.5 −8.5 1.9 GHz output port matching frequency GP (dB) 11.5 11.0 15.5 15.5 13.0 15.0 17.5 ISL (dB) 40.0 41.0 42.0 42.0 37.0 34.0 35.0 PO (1dB) (dBm) −7.0 −8.0 +1.5 +0.5 −4.0 +0.5 −8.5 2.4 GHz output port matching frequency GP (dB) 11.5 11.0 15.5 16.0 − − − ISL (dB) 38.0 42.0 41.0 42.0 − − − PO (1dB) (dBm) −7.5 −8.0 +1.0 +0.5 − − − C3B 6B C3C 6C C2P C2U C2V Marking µPC8178TB µPC8178TK µPC8179TB µPC8179TK µPC8128TB µPC8151TB µPC8152TB Remarks 1. Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2. To know the associated product, please refer to each latest data sheet. 2 Data Sheet PU10059EJ02V0DS µPC8179TK SYSTEM APPLICATION EXAMPLE Location examples in digital cellular Low Noise Tr. RX DEMOD. I Q SW ÷N PLL PLL I 0˚ TX PA φ 90˚ Q These ICs can be added to your system around parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation. Data Sheet PU10059EJ02V0DS 3 µPC8179TK PIN CONNECTIONS (Top View) (Bottom View) 6 5 4 6 5 4 1 2 3 Pin No. 1 2 3 4 5 6 Pin Name INPUT GND GND OUTPUT GND VCC 6C Applied Voltage (V) − 1 2 3 PIN EXPLANATION Pin No. 1 Pin Name INPUT Pin Voltage Note (V) 0.90 Function and Applications Internal Equivalent Circuit Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. 2 3 5 GND 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance defference. 6 4 4 OUTPUT Voltage as same as VCC through external inductor − Signal output pin. This pin is designed as collector output. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. For L, a size 1 005 chip inductor can be chosen. 2 3 1 5 6 VCC 2.4 to 3.3 − Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 3.0 V. 4 Data Sheet PU10059EJ02V0DS µPC8179TK ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Circuit Current Power Dissipation Operating Ambient Temperature Storage Temperature Input Power Symbol VCC ICC PD TA Tstg Pin TA = +25°C Test Conditions TA = +25°C, Pin 4, Pin 6 TA = +25°C TA = +85°C Note Ratings 3.6 15 232 −40 to +85 −55 to +150 +5 Unit V mA mW °C °C dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol VCC MIN. 2.4 −40 TYP. 3.0 MAX. 3.3 Unit V °C Remarks The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA +25 +85 ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency) Parameter Circuit Current Power Gain Symbol ICC GP No signal f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm Isolation ISL f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm Gain 1 dB Compression Output Power PO (1 dB) f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz Noise Figure NF f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz Input Return Loss RLin f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm Test Conditions MIN. 2.9 11.0 13.0 14.0 39.0 37.0 37.0 −0.5 −2.0 −3.0 − − − 4.0 4.0 6.0 TYP. 4.0 13.5 15.5 16.0 43.0 42.0 42.0 +2.0 +0.5 +0.5 5.0 5.0 5.0 7.0 7.0 9.0 MAX. 5.4 15.5 17.5 18.5 − − − − − − 6.5 6.5 6.5 − − − dB dB dBm dB Unit mA dB Data Sheet PU10059EJ02V0DS 5 µPC8179TK TEST CIRCUITS f = 1.0 GHz Output port matching circuit C6 C5 C4 VCC L1 6 C1 IN 1 4 DUT C2 C3 OUT Strip Line : 1 mm 2, 3, 5 Strip Line : 5 mm f = 1.9 GHz Output port matching circuit C7 C6 C5 C4 VCC L1 6 C1 IN 1 4 DUT C2 C3 OUT Strip Line : 7 mm 2, 3, 5 f = 2.4 GHz Output port matching circuit C6 C5 C4 C3 VCC L2 6 C1 IN 1 4 DUT L1 C2 OUT Strip Line : 4 mm 2, 3, 5 Strip Line : 3 mm 6 Data Sheet PU10059EJ02V0DS µPC8179TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD f = 1.0 GHz VCC C6 IN Top View C5 C4 VCC OUT L1 Mounting direction Remarks 1. 42 × 35 × 0.4 mm double-sided copper-clad polyimide board 2. Back side: GND pattern 3. Gold plated on pattern 4. :Through holes COMPONENT LIST Form Chip capacitor Symbol C1, C3 C2 C4 C5 Feed-though Capacitor Chip inductor C6 L1 Value 1 000 pF 0.75 pF 5 pF 8 pF 1 000 pF 12 nH Type code GRM40CH102J50PT GRM39CKR75C50PT GRM39CH050C50PT GRM39CH080D50PT DFT301-801 × 7R102S50 LL1608-FH12N Maker murata murata murata murata murata TOKO 6C C1 C2 C3 µPC8179TK Data Sheet PU10059EJ02V0DS 7 µPC8179TK f = 1.9 GHz VCC C5 C7 IN Top View 6C C1 C4 C6 VCC OUT L1 C2 C3 Mounting direction µPC8179TK Remarks 1. 42 × 35 × 0.4 mm double-sided copper-clad polyimide board 2. Back side: GND pattern 3. Gold plated on pattern 4. :Through holes COMPONENT LIST Form Chip capacitor Symbol C1, C3, C5, C6 C2 C4 Feed-though Capacitor Chip inductor C7 L1 Value 1 000 pF 0.5 pF 8 pF 1 000 pF 2.7 nH Type code GRM40CH102J50PT GRM39CKR5C50PT GRM39CH080D50PT DFT301-801 × 7R102S50 LL1608-FH2N7S Maker murata murata murata murata TOKO 8 Data Sheet PU10059EJ02V0DS µPC8179TK f = 2.4 GHz VCC C4 C6 VCC IN Top View C3 L2 OUT C5 C1 L1 Mounting direction Remarks 1. 42 × 35 × 0.4 mm double-sided copper-clad polyimide board 2. Back side: GND pattern 3. Gold plated on pattern 4. :Through holes COMPONENT LIST Form Chip capacitor Symbol C1, C2, C4, C5 C3 Feed-though Capacitor Chip inductor C6 L1 L2 Value 1 000 pF 10 pF 1 000 pF 2.7 nH 1.8 nH Type code GRM40CH102J50PT GRM39CH100D50PT DFT301-801 × 7R102S50 LL1608-FH2N7S LL1608-FH1N8S Maker murata murata murata TOKO TOKO 6C C2 µPC8179TK Data Sheet PU10059EJ02V0DS 9 µPC8179TK TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 6.0 TA = +25˚C 5.0 Circuit Current ICC (mA) +50˚C 4.0 +85˚C 3.0 2.0 1.0 –40˚C 0.5 1.0 1.5 –20˚C 2.0 2.5 3.0 3.5 4.0 0 Supply Voltage VCC (V) Remark The graph indicates nominal characteristics. 10 Data Sheet PU10059EJ02V0DS µPC8179TK f = 1.0 GHz MATCHING S11-FREQUENCY 1: 76.586 Ω –65.898 Ω 2.4152 pF MARKER 1 1.0 GHz 1 1 MARKER 1 1.0 GHz S22-FREQUENCY 1: 64.07 Ω 2.8164 Ω 448.24 pH VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm STOP 3 100.000 000 MHz S11-FREQUENCY S11 log 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20 START 100.000 000 MHz STOP 3 100.000 000 MHz 3.0 V 1 VCC = 2.7 V 2.4 V MAG 2 dB/ REF 0 dB 1: –7.7054 dB S12-FREQUENCY S12 log MAG 5 dB/ REF –20 dB 1: –43.627 dB –20 Pin = –30 dBm, –25 MARKER 1 f = 1.0 GHz –30 VCC = 2.4 V –35 2.7 V 3.0 V 1 –40 3.3 V –45 –50 –55 –60 –65 –70 START 100.000 000 MHz STOP 3 100.000 000 MHz Pin = –30 dBm, MARKER 1 f = 1.0 GHz 3.3 V S21-FREQUENCY S21 log 20 18 16 14 12 10 8 6 4 2 0 START 100.000 000 MHz 2.7 V 2.4 V VCC = 3.3 V 3.0 V 1 MAG 2 dB/ REF 0 dB 1: 13.368 dB S22 log 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 S22-FREQUENCY MAG 2 dB/ REF 0 dB 1: –15.922 dB Pin = –30 dBm, MARKER 1 f = 1.0 GHz VCC = 2.4 V 2.7 V 3.0 V 3.3 V 1 Pin = –30 dBm, MARKER 1 f = 1.0 GHz STOP 3 100.000 000 MHz STOP 3 100.000 000 MHz –20 START 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 11 µPC8179TK S11-FREQUENCY S11 log 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20 START 100.000 000 MHz STOP 3 100.000 000 MHz +25˚C +85˚C 1 TA = –40˚C MAG 2 dB/ REF 0 dB 1: –7.4331 dB S12 log –20 –25 –30 –35 TA = –40˚C –40 –45 –50 –55 –60 –65 –70 START 100.000 000 MHz STOP 3 100.000 000 MHz +85˚C 1 +25˚C MAG S12-FREQUENCY 5 dB/ REF –20 dB 1: –40.365 dB Pin = –30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz Pin = –30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz S21-FREQUENCY S21 log 20 18 16 14 12 10 8 6 4 2 +85˚C STOP 3 100.000 000 MHz TA = –40˚C +25˚C 1 MAG 2 dB/ REF 0 dB 1: 13.617 dB S22 log 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 S22-FREQUENCY MAG 2 dB/ REF 0 dB 1: –9.8258 dB Pin = –30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz 1 TA = –40˚C +25˚C +85˚C Pin = –30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz STOP 3 100.000 000 MHz 0 START 100.000 000 MHz –20 START 100.000 000 MHz Remark The graphs indicate nominal characteristics. 12 Data Sheet PU10059EJ02V0DS µPC8179TK OUTPUT POWER vs. INPUT POWER 10 5 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 10 TA = –40˚C VCC = 3.3 V Output Power Pout (dBm) 3.0 V 2.4 V 2.7 V 5 0 –5 –10 –15 –20 f = 1.0 GHz –25 –30 0 –5 –10 –15 –20 –25 –30 +85˚C +25˚C f = 1.0 GHz VCC = 3.0 V –20 –10 0 10 –20 –10 0 10 Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 2.4 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 Pout (undes) IM3 (des) IM3 (undes) OIP3 = 11.2 dBm Pout (des) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 IM3 (undes) VCC = 2.7 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 Pout (undes) IM3 (des) OIP3 = 12.0 dBm Pout (des) Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 OIP3 = 12.0 dBm Pout (des) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.3 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 IM3 (undes) IM3 (des) Pout (undes) OIP3 = 12.6 dBm Pout (des) Pout (undes) IM3 (undes) IM3 (des) Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 13 µPC8179TK Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V TA = –40˚C f1 = 1 000 MHz f2 = 1 001 MHz –10 0 Pout (des) IM3 (des) IM3 (undes) OIP3 = 12.4 dBm Pout (undes) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 IM3 (undes) VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz –10 0 Pout (des) IM3 (des) OIP3 = 12.0 dBm Pout (undes) Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 OIP3 = 10.4 dBm Pout (undes) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) 70 60 50 40 30 20 10 2.7 V 2.4 V VCC = 3.0 V 3.3 V Pout (des) IM3 (des) IM3 (undes) VCC = 3.0 V TA = +85˚C f1 = 1 000 MHz f2 = 1 001 MHz –10 0 f1 = 1 000 MHz f2 = 1 001 MHz 0 –20 –15 –10 –5 0 5 Input Power Pin (dBm) Output Power of Each Tone Pout (each) (dBm) NOISE FIGURE vs. SUPPLY VOLTAGE 6.5 f = 1.0 GHz Noise Figure NF (dB) 6 TA = +85˚C +25˚C 5 5.5 4.5 –40˚C 4 2 2.5 3 3.5 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 14 Data Sheet PU10059EJ02V0DS µPC8179TK f = 1.9 GHz MATCHING S11-FREQUENCY 1: 36.523 Ω –50.693 Ω 1.6524 pF S22-FREQUENCY 1: 47.293 Ω –18.213 Ω 4.5993 pF MARKER 1 1.9 GHz MARKER 1 1.9 GHz 1 1 VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm STOP 3 100.000 000 MHz S11-FREQUENCY S11 log 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 Pin = –30 dBm, MARKER 1 f = 1.9 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz 3.0 V 3.3 V 1 VCC = 2.7 V 2.4 V MAG 2 dB/ REF 0 dB 1: –7.7246 dB S12-FREQUENCY S12 log MAG 5 dB/ REF –20 dB –20 –25 Pin = –30 dBm, MARKER 1 f = 1.9 GHz –30 –35 –40 –45 –50 –55 –60 –65 –70 START 100.000 000 MHz VCC = 2.4 V 2.7 V 3.0 V 3.3 V STOP 3 100.000 000 MHz 1 1: –41.3 dB S21-FREQUENCY 20 S21 log MAG 2 dB/ REF 0 dB 1 VCC = 3.3 V 3.0 V 1: 16.03 dB S22 log 0 –2 –4 –6 –8 –10 2.4 V 2.7 V –12 –14 –16 S22-FREQUENCY MAG 2 dB/ REF 0 dB 1: –15.331 dB 18 Pin = –30 dBm, MARKER 1 f = 1.9 GHz 16 14 12 10 8 6 4 2 0 START 100.000 000 MHz VCC = 2.4 V 2.7 V 3.0 V 3.3 V 1 STOP 3 100.000 000 MHz –18 Pin = –30 dBm, MARKER 1 f = 1.9 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 15 µPC8179TK S11-FREQUENCY S11 log 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20 START 100.000 000 MHz STOP 3 100.000 000 MHz +85˚C 1 TA = –40˚C +25˚C MAG 2 dB/ REF 0 dB 1: –8.2556 dB S12-FREQUENCY S12 log MAG 5 dB/ REF –20 dB –20 Pin = –30 dBm, VCC = 3.0 V, –25 MARKER 1 f = 1.9 GHz –30 –35 –40 –45 –50 –55 –60 –65 –70 START 100.000 000 MHz STOP 3 100.000 000 MHz +85˚C TA = –40˚C 1 +25˚C 1: –41.365 dB Pin = –30 dBm, VCC = 3.0 V, MARKER 1 f = 1.9 GHz S21-FREQUENCY S21 log MAG 2 dB/ REF 0 dB 1: 15.717 dB 20 Pin = –30 dBm, 18 VCC = 3.0 V, TA = –40˚C MARKER 1 f = 1.9 GHz 1 16 14 12 10 8 6 4 2 0 START 100.000 000 MHz STOP 3 100.000 000 MHz +85˚C +25˚C S22 log 0 –2 –4 –6 –8 –10 –12 –14 S22-FREQUENCY MAG 2 dB/ REF 0 dB 1: –16.419 dB TA = –40˚C +25˚C +85˚C Pin = –30 dBm, –18 VCC = 3.0 V, –20 MARKER 1 f = 1.9 GHz START 100.000 000 MHz STOP 3 100.000 000 MHz –16 1 Remark The graphs indicate nominal characteristics. 16 Data Sheet PU10059EJ02V0DS µPC8179TK OUTPUT POWER vs. INPUT POWER 10 VCC = 3.0 V 5 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 10 TA = –40˚C 5 Output Power Pout (dBm) 3.3 V 0 –5 –10 –15 –20 2.7 V 2.4 V 0 +85˚C –5 –10 –15 –20 +25˚C f = 1.9 GHz –25 –30 –20 –10 0 10 –25 –30 –20 –10 f = 1.9 GHz VCC = 3.0 V 0 10 Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 2.4 V f1 = 1 900 MHz f2 = 1 901 MHz –10 0 IM3 (undes) Pout (undes) IM3 (des) OIP3 = 9.0 dBm Pout (des) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 2.7 V f1 = 1 900 MHz f2 = 1 901 MHz –10 0 Pout (undes) IM3 (undes) IM3 (des) OIP3 = 9.7 dBm Pout (des) Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz –10 0 Pout (undes) IM3 (undes) OIP3 = 10.4 dBm Pout (des) IM3 (des) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.3 V f1 = 1 900 MHz f2 = 1 901 MHz –10 0 Pout (undes) IM3 (undes) OIP3 = 10.5 dBm Pout (des) IM3 (des) Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 17 µPC8179TK Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V TA = –40˚C f1 = 1 900 MHz f2 = 1 901 MHz –10 0 Pout (des) IM3 (des) IM3 (undes) OIP3 = 10.8 dBm Pout (undes) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz –10 0 Pout (des) IM3 (undes) IM3 (des) OIP3 = 10.4 dBm Pout (undes) Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 OIP3 = 10.1 dBm 10 Pout (undes) 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V TA = +85˚C f1 = 1 900 MHz f2 = 1 901 MHz –10 0 Pout (des) IM3 (undes) IM3 (des) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) 60 50 40 2.4 V 30 20 10 0 –20 f1 = 1 900 MHz f2 = 1 901 MHz –15 –10 –5 0 5 2.7 V VCC = 3.0 V 3.3 V Input Power Pin (dBm) Output Power of Each Tone Pout (each) (dBm) NOISE FIGURE vs. SUPPLY VOLTAGE 6.5 f = 1.9 GHz Noise Figure NF (dB) 6 5.5 TA = +85˚C 5 +25˚C 4.5 –40˚C 4 2 2.5 3 3.5 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 18 Data Sheet PU10059EJ02V0DS µPC8179TK f = 2.4 GHz MATCHING S11-FREQUENCY MARKER 1 2.4 GHz 1: 26.719 Ω –37.301 Ω 1.7778 pF S22-FREQUENCY 1: 44.846 Ω 11.99 Ω 795.13 pH 1 1 VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz MARKER 1 2.4 GHz VCC = 3.0 V ICC = 4.23 mA Pin = –30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S11-FREQUENCY S11 log 0 –2 –4 –6 –8 –10 –12 –14 –16 3.0 V 3.3 V VCC = 2.4 V 2.7 V 1 MAG 2 dB/ REF 0 dB 1: –9.4265 dB S12-FREQUENCY S12 log MAG 5 dB/ REF –20 dB 1: –42.425 dB –20 VCC = 2.4 V –25 Pin = –30 dBm, 2.7 V MARKER 1 f = 2.4 GHz 3.0 V –30 3.3 V –35 1 –40 –45 –50 –55 –60 –65 –70 START 100.000 000 MHz STOP 3 100.000 000 MHz –18 Pin = –30 dBm, MARKER 1 f = 2.4 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz S21-FREQUENCY S21 log MAG 2 dB/ REF 0 dB 20 18 Pin = –30 dBm, MARKER 1 f = 2.4 GHz 16 14 12 10 8 6 4 2 0 START 100.000 000 MHz STOP 3 100.000 000 MHz 2.7 V VCC = 3.3 V 2.4 V 1: 16.497 dB 1 S22 log 0 –2 –4 3.0 V –6 –8 –10 –12 –14 –16 S22-FREQUENCY MAG 2 dB/ REF 0 dB 1: –16.926 dB VCC = 2.4 V 2.7 V 3.0 V 3.3 V 1 –18 Pin = –30 dBm, MARKER 1 f = 2.4 GHz –20 START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 19 µPC8179TK S11-FREQUENCY S11 log 0 –2 –4 –6 –8 –10 –12 –14 –16 Pin = –30 dBm, –18 VCC = 3.0 V, –20 MARKER 1 f = 2.4 GHz START 100.000 000 MHz STOP 3 100.000 000 MHz +85˚C TA = –40˚C +25˚C 1 MAG 2 dB/ REF 0 dB 1: –9.4361 dB S12-FREQUENCY S12 log MAG 5 dB/ REF –20 dB 1: –41.826 dB –20 Pin = –30 dBm, –25 VCC = 3.0 V, MARKER 1 f = 2.4 GHz –30 TA = –40˚C –35 1 –40 –45 –50 –55 –60 –65 +25˚C STOP 3 100.000 000 MHz +85˚C –70 START 100.000 000 MHz S21-FREQUENCY S21 log MAG 2 dB/ 20 Pin = –30 dBm, 18 VCC = 3.0 V, MARKER 1 f = 2.4 GHz 16 14 12 10 8 6 4 2 0 START 100.000 000 MHz STOP 3 100.000 000 MHz +25˚C +85˚C TA = –40˚C REF 0 dB 1: 16.148 dB 1 S22 log 0 –2 –4 –6 –8 –10 –12 –14 –16 S22-FREQUENCY MAG 2 dB/ REF 0 dB 1: –15.993 dB TA = +85˚C 1 +25˚C Pin = –30 dBm, –40˚C –18 VCC = 3.0 V, –20 MARKER 1 f = 2.4 GHz START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. 20 Data Sheet PU10059EJ02V0DS µPC8179TK OUTPUT POWER vs. INPUT POWER 10 VCC = 3.0 V 5 Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 10 TA = –40˚C 5 3.3 V 2.4 V 0 –5 –10 –15 –20 2.7 V 0 +25˚C –5 –10 –15 –20 +85˚C f = 2.4 GHz –25 –30 –20 –10 0 10 –25 –30 –20 –10 f = 2.4 GHz VCC = 3.0 V 0 10 Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 2.4 V f1 = 2 400 MHz f2 = 2 401 MHz –10 0 IM3 (undes) Pout (des) IM3 (des) OIP3 = 9.1 dBm Pout (undes) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 2.7 V f1 = 2 400 MHz f2 = 2 401 MHz –10 0 Pout (des) IM3 (des) OIP3 = 9.6 dBm Pout (undes) IM3 (undes) Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V f1 = 2 400 MHz f2 = 2 401 MHz –10 0 Pout (des) IM3 (des) OIP3 = 10.1 dBm Pout (undes) IM3 (undes) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.3 V f1 = 2 400 MHz f2 = 2 401 MHz –10 0 Pout (des) IM3 (des) OIP3 = 10.3 dBm Pout (undes) IM3 (undes) Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 21 µPC8179TK Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V TA = –40˚C f1 = 2 400 MHz f2 = 2 401 MHz –10 0 Pout (des) IM3 (des) OIP3 = 10.2 dBm Pout (undes) IM3 (undes) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V f1 = 2 400 MHz f2 = 2 401 MHz –10 0 Pout (des) IM3 (undes) IM3 (des) OIP3 = 10.1 dBm Pout (undes) Input Power Pin (dBm) Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 –20 VCC = 3.0 V TA = +85˚C f1 = 2 400 MHz f2 = 2 401 MHz –10 0 Pout (des) IM3 (undes) IM3 (des) OIP3 = 9.3 dBm Pout (undes) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) 60 50 VCC = 3.0 V 40 2.4 V 30 20 10 2.7 V 3.3 V 0 –20 f1 = 2 400 MHz f2 = 2 401 MHz –15 –10 –5 0 5 Input Power Pin (dBm) Output Power of Each Tone Pout (each) (dBm) NOISE FIGURE vs. SUPPLY VOLTAGE 6.5 f = 2.4 GHz Noise Figure NF (dB) 6 TA = +85˚C +25˚C 5 5.5 4.5 –40˚C 4 2 2.5 3 3.5 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 22 Data Sheet PU10059EJ02V0DS µPC8179TK f = 3.0 GHz MATCHING S11-FREQUENCY 1: 77.02 Ω –65.883 Ω 1 GHz 2: 37.43 Ω –53.027 Ω 1.9 GHz 3: 28.781 Ω –39.209 Ω 2.4 GHz 4: 25.676 Ω –27.78 Ω 1.9097 pF 4 VCC = 3.0 V 1 ICC = 4.23 mA 32 Pin = –30 dBm TA = +25˚C (at L loaded) START 100.000 000 MHz STOP 3 100.000 000 MHz MARKER 4 3 GHz S22-FREQUENCY 1: 96.859 Ω –359.69 Ω 1 GHz 2: 54.43 Ω –218.02 Ω 1.9 GHz 3: 41.422 Ω –181.84 Ω 2.4 GHz 4: 27.039 Ω –151.69 Ω 349.74 fF MARKER 4 3 GHz START 100.000 000 MHz 1 2 VCC = 3.0 V 43 ICC = 4.23 mA Pin = –30 dBm TA = +25˚C (at L loaded) STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10059EJ02V0DS 23 µPC8179TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm) (Top View) (Bottom View) 0.48±0.05 0.48±0.05 1.5±0.1 1.1±0.1 1.3±0.05 0.2±0.1 0.16±0.05 0.9±0.1 24 0.55±0.03 Data Sheet PU10059EJ02V0DS 0.11+0.1 –0.05 µPC8179TK NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10059EJ02V0DS 25 µPC8179TK When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of April, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 26 Data Sheet PU10059EJ02V0DS µPC8179TK For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504