74AXP1G125
Low-power buffer/line driver; 3-state
Rev. 1 — 16 January 2014
Product data sheet
1. General description
The 74AXP1G125 is a single buffer/line driver with 3-state output.
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall
times.
This device ensures very low static and dynamic power consumption across the entire
VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications
using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging
backflow current through the device when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.7 V to 2.75 V
Low input capacitance; CI = 0.5 pF (typical)
Low output capacitance; CO = 1.0 pF (typical)
Low dynamic power consumption; CPD = 2.5 pF at VCC = 1.2 V (typical)
Low static power consumption; ICC = 0.6 A (85 C maximum)
High noise immunity
Complies with JEDEC standard:
JESD8-12A.01 (1.1 V to 1.3 V)
JESD8-11A.01 (1.4 V to 1.6 V)
JESD8-7A (1.65 V to 1.95 V)
JESD8-5A.01 (2.3 V to 2.7 V)
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
CDM JESD22-C101E exceeds 1000 V
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 2.75 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from 40 C to +85 C
74AXP1G125
NXP Semiconductors
Low-power buffer/line driver; 3-state
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range
Name
Description
Version
74AXP1G125GM
40 C to +85 C
XSON6
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 1.45 0.5 mm
74AXP1G125GN
40 C to +85 C
XSON6
extremely thin small outline package; no leads;
6 terminals; body 0.9 1.0 0.35 mm
SOT1115
74AXP1G125GS
40 C to +85 C
XSON6
extremely thin small outline package; no leads;
6 terminals; body 1.0 1.0 0.35 mm
SOT1202
74AXP1G125GX
40 C to +85 C
X2SON5
X2SON5: plastic thermal enhanced extremely thin
small outline package; no leads; 5 terminals;
body 0.8 0.8 0.35 mm
SOT1226
4. Marking
Table 2.
Marking
Type number
Marking code[1]
74AXP1G125GM
rM
74AXP1G125GN
rM
74AXP1G125GS
rM
74AXP1G125GX
rM
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
2
A
Y
4
A
2
Y
4
1
OE
1
mna118
Fig 1.
Logic symbol
74AXP1G125
Product data sheet
EN
OE
mna119
Fig 2.
IEC logic symbol
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2014
001aad068
Fig 3.
Logic diagram
© NXP B.V. 2014. All rights reserved.
2 of 18
74AXP1G125
NXP Semiconductors
Low-power buffer/line driver; 3-state
6. Pinning information
6.1 Pinning
$;3*
$;3*
2(
9&&
2(
$
QF
*1'
<
9&&
<
*1'
$
DDD
DDD
7UDQVSDUHQWWRSYLHZ
7UDQVSDUHQWWRSYLHZ
Fig 4.
Pin configuration SOT886, SOT1115 and
SOT1202 (XSON6)
Fig 5.
Pin configuration SOT1226 (X2SON5)
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
X2SON5
XSON6
OE
1
1
output enable input
A
2
2
data input
GND
3
3
ground (0 V)
Y
4
4
data output
n.c.
-
5
not connected
VCC
5
6
supply voltage
7. Functional description
Table 4.
Function table[1]
Input
Output
OE
A
Y
L
L
L
L
H
H
H
X
Z
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = Don’t care;
Z = high-impedance OFF-state.
74AXP1G125
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2014
© NXP B.V. 2014. All rights reserved.
3 of 18
74AXP1G125
NXP Semiconductors
Low-power buffer/line driver; 3-state
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
IIK
input clamping current
VI
input voltage
IOK
output clamping current
Conditions
VI < 0 V
[1]
VO < 0 V
[1]
Min
Max
Unit
0.5
+3.3
V
50
-
mA
0.5
+3.3
V
50
-
mA
0.5
+3.3
V
VO
output voltage
IO
output current
-
20
mA
ICC
supply current
-
50
mA
IGND
ground current
50
-
mA
Tstg
storage temperature
65
+150
C
Ptot
total power dissipation
-
250
mW
[1]
VO = 0 V to VCC
Tamb = 40 C to +85 C
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
Conditions
Min
Max
Unit
supply voltage
0.7
2.75
V
VI
input voltage
0
2.75
V
VO
output voltage
Active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
2.75
V
40
+85
C
0
200
ns/V
Tamb
ambient temperature
t/V
input transition rise and fall rate
74AXP1G125
Product data sheet
VCC = 0.7 V to 2.75 V
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2014
© NXP B.V. 2014. All rights reserved.
4 of 18
74AXP1G125
NXP Semiconductors
Low-power buffer/line driver; 3-state
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions, unless otherwise specified; voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Tamb = 40 C to +85 C
Conditions
HIGH-level input VCC = 0.75 V to 0.85 V
voltage
VCC = 1.1 V to 1.95 V
VIH
LOW-level input
voltage
VOH
HIGH-level
output voltage
LOW-level
output voltage
VOL
Typ 25 C
Max 25 C Max 85 C
0.75VCC
-
-
-
V
0.65VCC
-
-
-
V
1.6
-
-
-
V
VCC = 0.75 V to 0.85 V
-
-
0.25VCC
0.25VCC
V
VCC = 1.1 V to 1.95 V
-
-
0.35VCC
0.35VCC
V
VCC = 2.3 V to 2.7 V
-
-
0.7
0.7
V
IO = 20 A; VCC = 0.7 V
-
0.69
-
-
V
IO = 100 A; VCC = 0.75 V
0.65
-
-
-
V
IO = 2 mA; VCC = 1.1 V
0.825
-
-
-
V
IO = 3 mA; VCC = 1.4 V
1.05
-
-
-
V
IO = 4.5 mA; VCC = 1.65 V
1.2
-
-
-
V
IO = 8 mA; VCC = 2.3 V
1.7
-
-
-
V
IO = 20 A; VCC = 0.7 V
-
0.01
-
-
V
IO = 100 A; VCC = 0.75 V
-
-
0.1
0.1
V
IO = 2 mA; VCC = 1.1 V
-
-
0.275
0.275
V
IO = 3 mA; VCC = 1.4 V
-
-
0.35
0.35
V
VCC = 2.3 V to 2.7 V
VIL
Min
Unit
IO = 4.5 mA; VCC = 1.65 V
-
-
0.45
0.45
V
IO = 8 mA; VCC = 2.3 V
-
-
0.7
0.7
V
[1]
-
0.001
0.1
0.5
A
II
input leakage
current
IOZ
OFF-state output VI = VIH or VIL; VO = 0 V to 2.75 V
current
[1]
-
0.02
0.1
0.5
A
IOFF
power-off
leakage current
VI or VO = 0 V to 2.75 V;
VCC = 0 V
[1]
-
0.01
0.1
0.5
A
IOFF
additional
power-off
leakage current
VI or VO = 0 V or 2.75 V;
VCC = 0 V to 0.1 V
[1]
-
0.02
0.1
0.5
A
ICC
supply current
VI = 0 V or VCC; IO = 0 A
[1]
-
0.01
0.3
0.6
A
ICC
additional supply VI = VCC 0.5 V; IO = 0 A;
current
VCC = 2.5 V
-
2
100
150
A
[1]
VI = 0 V to 2.75 V;
VCC = 0 V to 2.75 V
All typical values are measured at VCC = 1.2 V.
74AXP1G125
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2014
© NXP B.V. 2014. All rights reserved.
5 of 18
74AXP1G125
NXP Semiconductors
Low-power buffer/line driver; 3-state
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 13.
Symbol Parameter
tpd
ten
propagation
delay
enable time
Tamb = 25 C
Conditions
Min
Max
Min
Max
3
11
38
2
132
ns
VCC = 1.1 V to 1.3 V
2.0
4.3
7.0
1.8
7.3
ns
VCC = 1.4 V to 1.6 V
1.6
3.2
4.7
1.5
5.0
ns
A to Y; see Figure 6
VCC = 0.75 V to 0.85 V
VCC = 1.65 V to 1.95 V
1.4
2.7
3.8
1.2
4.1
ns
VCC = 2.3 V to 2.7 V
1.1
2.1
2.8
1.0
3.1
ns
5
15
45
4
160
ns
OE to Y; see Figure 7
[3][5]
VCC = 1.1 V to 1.3 V
2.7
5.6
8.7
2.5
9.1
ns
VCC = 1.4 V to 1.6 V
2.1
4.1
5.8
1.9
6.2
ns
VCC = 1.65 V to 1.95 V
1.7
3.4
4.8
1.5
5.2
ns
1.4
2.6
3.6
1.2
3.9
ns
4
14
42
1
152
ns
VCC = 1.1 V to 1.3 V
2.9
5.9
9.5
2.7
9.9
ns
VCC = 1.4 V to 1.6 V
2.3
4.4
6.6
2.0
7.1
ns
VCC = 2.3 V to 2.7 V
disable time
Unit
[2][5]
VCC = 0.75 V to 0.85 V
tdis
Tamb = 40 C to +85 C
Typ[1]
OE to Y; see Figure 7
[4]
VCC = 0.75 V to 0.85 V
VCC = 1.65 V to 1.95 V
2.4
4.5
6.6
2.1
7.1
ns
VCC = 2.3 V to 2.7 V
1.7
3.3
4.7
1.5
5.1
ns
-
-
-
1.0
-
ns
[6]
tt
transition time
VCC = 2.7 V; see Figure 6
CI
input
capacitance
VI = 0 V or VCC;
VCC = 0 V to 2.75 V
-
0.5
-
-
-
pF
CO
output
capacitance
VO = 0 V; VCC = 0 V
-
1
-
-
-
pF
74AXP1G125
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2014
© NXP B.V. 2014. All rights reserved.
6 of 18
74AXP1G125
NXP Semiconductors
Low-power buffer/line driver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 13.
Symbol Parameter
CPD
Tamb = 25 C
Conditions
Min
Typ[1]
Tamb = 40 C to +85 C
Max
Min
Max
[7]
power dissipation fi = 1 MHz; VI = 0 V to VCC
capacitance
VCC = 0.75 V to 0.85 V
-
2.4
-
-
-
pF
VCC = 1.1 V to 1.3 V
-
2.5
-
-
-
pF
VCC = 1.4 V to 1.6 V
-
2.6
-
-
-
pF
VCC = 1.65 V to 1.95 V
-
2.6
-
-
-
pF
VCC = 2.3 V to 2.7 V
-
3.0
-
-
-
pF
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL.
[3]
ten is the same as tPZH and tPZL.
[4]
tdis is the same as tPHZ and tPLZ.
[5]
For additional propagation delays and enable times values at different load capacitances see Figure 8 to Figure 12.
[6]
tt is the same as tTHL and tTLH.
[7]
Unit
CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + CL VCC2 fo where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching.
12. Waveforms
9,
$LQSXW
90
90
*1'
W3+/
92+
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