AFT05MS003NT1

Freescale Semiconductor Technical Data Document Number: AFT05MS003N Rev. 0, 8/2015 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET AFT05MS003N Designed for handheld two--way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin (dBm) Gps (dB) D (%) Pout (W) 136–174 (1,4) 17.8 17.1 67.1 3.2 (2,4) 20.0 15.1 73.0 3.2 350–520 1.8–941 MHz, 3 W, 7.5 V WIDEBAND AIRFAST RF POWER LDMOS TRANSISTOR Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) Pout (W) 520 (3) 20.8 68.3 3.0 SOT--89 Load Mismatch/Ruggedness Frequency (MHz) Signal Type 520 (3) CW 1. 2. 3. 4. VSWR > 65:1 at all Phase Angles Pin (dBm) Test Voltage 21.1 9.0 Result Source 2 No Device Degradation Measured in 136–174 MHz VHF broadband reference circuit. Measured in 350–520 MHz UHF broadband reference circuit. Measured in 520 MHz narrowband production test circuit. The values shown are the center band performance numbers across the indicated frequency range. 1 2 3 Gate Source Drain Figure 1. Pin Connections Features        Characterized for Operation from 1.8 to 941 MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Integrated Stability Enhancements Wideband — Full Power Across the Band Exceptional Thermal Performance Extreme Ruggedness Typical Applications      Output Stage VHF Band Handheld Radio Output Stage UHF Band Handheld Radio Output Stage for 700–900 MHz Handheld Radio Smart Metering Driver for 1.8–941 MHz Applications  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT05MS003N 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +30 Vdc Gate--Source Voltage VGS –6.0, +12 Vdc Operating Voltage VDD 12.5, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C TJ –40 to +150 C PD 30.5 0.24 W W/C Symbol Value (2,3) Unit RJC 4.1 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 3 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C, passes 1000 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Zero Gate Voltage Drain Leakage Current (VDS = 7.5 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 67 Adc) VGS(th) 1.8 2.2 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 700 mAdc) VDS(on) — 0.25 — Vdc gfs — 3.1 — S Reverse Transfer Capacitance (VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.1 — pF Output Capacitance (VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 23.2 — pF Input Capacitance (VDS = 7.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz) Ciss — 38.5 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 7.5 Vdc, ID = 2.6 Adc) Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. (continued) AFT05MS003N 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 13.95 dBm, f = 520 MHz Common--Source Amplifier Output Power Pout — 3.0 — W D — 68.3 — % Drain Efficiency Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR Pin (dBm) Test Voltage, VDD Result 520 CW > 65:1 at all Phase Angles 21.1 9.0 No Device Degradation Table 6. Ordering Information Device AFT05MS003NT1 Tape and Reel Information T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel Package SOT--89 AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 100 C, CAPACITANCE (pF) Ciss Coss 10 Crss 1 Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 0.1 0 2 6 4 10 8 12 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 109 MTTF (HOURS) VDD = 50 Vdc ID = 0.476 Amps 108 0.594 Amps 107 0.714 Amps 106 90 100 110 120 130 140 150 160 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http:/www.freescale.com/rf/calculators. Figure 3. MTTF versus Junction Temperature — CW AFT05MS003N 4 RF Device Data Freescale Semiconductor, Inc. 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT Table 7. 136–174 MHz VHF Broadband Performance (In Freescale VHF Broadband Reference Circuit, 50 ohm system) VDD = 7.5 Volts, IDQ = 60 mA, TA = 25C, CW Frequency (MHz) Pin (dBm) Gps (dB) D (%) Pout (W) 135 17.8 17.5 68.1 3.5 155 17.8 17.1 67.1 3.2 175 17.8 17.2 65.6 3.3 Table 8. Load Mismatch/Ruggedness (In Freescale VHF Broadband Reference Circuit) Frequency (MHz) Signal Type 155 CW VSWR > 65:1 at all Phase Angles Pin (dBm) Test Voltage, VDD Result 20.0 9.0 No Device Degradation AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 5 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT — 0.83  1.86 (2.1 cm  4.7 cm) J1 C12 C13 C1 C11 C14 C15 C16 L4 C17 C18 C19 C10 L6 C2 C3 R1 L1 C9 Q1 L2 C7 C8 L5 L3 C4 C5 C6 D61839 AFT05MS003N Rev. 0 (136–174 MHz) Figure 4. AFT05MS003N VHF Broadband Reference Circuit Component Layout — 136–174 MHz Table 9. AFT05MS003N VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz Part Description Part Number Manufacturer C1, C11 1500 pF Chip Capacitors C2012X7R2A152K085AM TDK C2, C3, C4, C5, C8 56 pF Chip Capacitors GQM2195C2E560GB12D Murata C6, C7 47 pF Chip Capacitors GQM2195C2E470GB12D Murata C9 39 pF Chip Capacitor GQM2195C2E390GB12D Murata C10 20 pF Chip Capacitor GQM2195C2E200GB12D Murata C12, C13 10 F, 50 V Electrolytic Capacitors UVR1H100MDD Nichicon C14, C19 1 F Chip Capacitors GRM21BR71H105KA12L Murata C15, C18 1 nF Chip Capacitors C2012X7R2E102M TDK C16, C17 100 pF Chip Capacitors ATC600F101JT250XT ATC J1 Right-Angle Breakaway Headers (3 pins) 22-28-8360 Molex L1 12.1 nH Inductor 0908SQ12N Coilcraft L2 11.2 nH Inductor 0807SQ11N Coilcraft L3, L4 25.0 nH Inductors 0908SQ25N Coilcraft L5 17.0 nH Inductor 0908SQ17N Coilcraft L6 23.0 nH Inductor 0908SQ23N Coilcraft Q1 RF Power LDMOS Transistor AFT05MS003NT1 Freescale R1 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay PCB 0.020, r = 4.8, FR4 (S--1000) D61839 MTL AFT05MS003N 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT 21 20 55 18 45 17 35 Gps 16 5 15 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 65 D 19 D, DRAIN EFFICIENCY (%) 75 4 14 VDD = 7.5 Vdc Pin = 17.8 dBm IDQ = 60 mA 13 12 125 135 3 Pout 145 165 155 2 1 185 175 f, FREQUENCY (MHz) Figure 5. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Pin 4 f = 155 MHz, VDD = 7.5 Vdc 0.6 3 Pin = 13.0 dBm Pin = 16.0 dBm 2.5 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 3.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 3.5 3 2.5 0.4 Pin = 16.0 dBm 0.3 0.2 0.1 0 Detail A f = 155 MHz, VDD = 7.5 Vdc 0.5 Pin = 13.0 dBm 0 0.5 1 1.5 2 2.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 4 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Gate--Source Voltage 23 40 155 MHz 21 19 20 Gps 135 MHz 17 0 4 175 MHz 15 175 MHz 13 3 Pout 2 135 MHz 11 9 60 155 MHz 175 MHz 135 MHz VDD = 7.5 Vdc IDQ = 60 mA 155 MHz 0 10 20 30 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 80 D 25 40 50 60 70 80 90 100 1 0 110 Pout, OUTPUT POWER (WATTS) 27 Pin, INPUT POWER (mW) Figure 7. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 7 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT Zo = 25  f = 135 MHz Zsource f = 175 MHz f = 135 MHz f = 175 MHz Zload Zsource  Zload  135 4.81 + j11.90 7.48 – j3.90 140 5.82 + j13.00 7.70 – j3.87 145 7.20 + j14.00 7.90 – j3.96 150 9.40 + j14.99 8.12 – j4.18 155 12.60 + j15.10 8.21 – j4.53 160 16.80 + j13.17 8.17 – j4.98 165 19.37 + j7.27 7.95 – j5.45 170 16.05 + j0.81 7.56 – j5.90 175 10.05 – j0.70 7.03 – j6.25 f MHz Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 8. VHF Broadband Series Equivalent Source and Load Impedance — 136–174 MHz AFT05MS003N 8 RF Device Data Freescale Semiconductor, Inc. 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT Table 10. 350–520 MHz UHF Broadband Performance (In Freescale UHF Broadband Reference Circuit, 50 ohm system) VDD = 7.5 Volts, IDQ = 50 mA, TA = 25C, CW Frequency (MHz) Pin (dBm) Gps (dB) D (%) Pout (W) 350 20.0 15.5 59.0 3.8 435 20.0 15.1 73.0 3.2 520 20.0 15.2 69.6 3.3 Table 11. Load Mismatch/Ruggedness (In Freescale UHF Broadband Reference Circuit) Frequency (MHz) Signal Type 435 CW VSWR > 65:1 at all Phase Angles Pin (dBm) Test Voltage, VDD Result 23.0 9.0 No Device Degradation AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 9 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT — 0.83  1.86 (2.1 cm  4.7 cm) J1 B1 C1 C2 C12 C11 R1 C5 L1 B2 C7 C6 L5 C8 L3 C3 R2 L2 Q1 C10 C9 L4 L6 C4 R3 D70894 AFT05MS003N Rev. 0 (350–520 MHz) Figure 9. AFT05MS003N UHF Broadband Reference Circuit Component Layout — 350–520 MHz Table 12. AFT05MS003N UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz Part Description Part Number Manufacturer B1, B2 RF Beads 2743019447 Fair-Rite C1, C8, C12 100 pF Chip Capacitors ATC100A101JT150XT ATC C2 9.0 pF Chip Capacitor GQM2195C2E9R0BB12D Murata C3 10 pF Chip Capacitor GQM2195C2E100FB12D Murata C4, C9 39 pF Chip Capacitors GQM2195C2E390GB12D Murata C5 100 pF Chip Capacitor GQM2195C2E101GB12D Murata C6 1.0 F Chip Capacitor GRM31CR72A105KA01L Murata C7 10 F Chip Capacitor GRM31CR61H106KA12L Murata C10 15 pF Chip Capacitor GQM2195C2E150FB12D Murata C11 3.9 pF Chip Capacitor GQM2195C2E3R9BB12D Murata J1 Right-Angle Breakaway Headers (3 pins) 22-28-8360 Molex L1 2.2 nH Inductor L06032E2CGS AVX L2, L5 6.8 nH Inductors ATC0805WL6R8 ATC L3 19 nH Inductor 0806SQ19N Coilcraft L4 5.6 nH Inductor L08055R6CEW AVX L6 1.8 nH Inductor L08051E8CGS AVX Q1 RF Power LDMOS Transistor AFT05MS003NT1 Freescale R1, R2 22 , 1/10 W Chip Resistor RR1220Q-220-D Susumu R3 1.5  1/10 W Chip Resistor RC1206FR-071R5L Yageo PCB 0.020, r = 4.8, FR4 (S--1000) D70894 MTL AFT05MS003N 10 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT 20 Gps, POWER GAIN (dB) 75 D 18 65 17 55 16 45 15 5 Gps 14 13 12 11 350 VDD = 7.5 Vdc Pin = 20.0 dBm IDQ = 50 mA 370 390 4 3 Pout 410 430 450 Pout, OUTPUT POWER (WATTS) 19 D, DRAIN EFFICIENCY (%) 85 2 470 490 1 530 510 f, FREQUENCY (MHz) Figure 10. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Pin 5 f = 435 MHz, VDD = 7.5 Vdc Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 4.5 4 3.5 Pin = 20.0 dBm 3 Pin = 17.0 dBm 2.5 2 1.5 1 0.5 0 0 Detail A 1 1.5 2 2.5 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 3.5 3 f = 435 MHz, VDD = 7.5 Vdc Pin = 20.0 dBm Pin = 17.0 dBm 1 1.5 1.3 1.8 2 2.3 2.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 4 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) 25 70 D 23 Gps, POWER GAIN (dB) 90 435 MHz 350 MHz 21 19 350 MHz 17 15 Gps 50 520 MHz 30 10 520 MHz 5 4 435 MHz 13 3 11 Pout 9 7 0 20 350 MHz 40 60 435 MHz 520 MHz VDD = 7.5 Vdc IDQ = 50 mA 80 100 120 140 160 180 2 1 0 200 220 Pout, OUTPUT POWER (WATTS) 27 D, DRAIN EFFICIENCY (%) Figure 11. Output Power versus Gate--Source Voltage Pin, INPUT POWER (mW) Figure 12. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 11 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT f = 520 MHz Zo = 10  Zsource f = 520 MHz f = 350 MHz Zload f = 350 MHz f MHz Zsource  Zload  350 6.90 + j6.70 4.89 + j4.10 360 7.22 + j6.96 4.95 + j4.48 370 7.60 + j7.15 5.04 + j4.83 380 7.94 + j7.62 5.15 + j5.14 390 8.34 + j7.66 5.28 + j5.42 400 8.65 + j7.61 5.44 + j5.65 410 8.97 + j7.37 5.58 + j5.82 420 9.08 + j7.06 5.73 + j5.90 430 8.91 + j6.73 5.86 + j5.95 440 8.63 + j6.34 5.94 + j5.90 450 8.14 + j6.04 5.95 + j5.81 460 7.49 + j5.89 5.87 + j5.66 470 6.77 + j5.95 5.68 + j5.51 480 6.05 + j6.21 5.39 + j5.39 490 5.38 + j6.64 5.03 + j5.33 500 4.80 + j7.20 4.60 + j5.35 510 4.30 + j7.86 4.16 + j5.47 520 3.94 + j8.57 3.68 + j5.71 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 13. UHF Broadband Series Equivalent Source and Load Impedance — 350–520 MHz AFT05MS003N 12 RF Device Data Freescale Semiconductor, Inc. 520 MHz NARROWBAND PRODUCTION TEST FIXTURE — 3  5 (7.62 cm  12.7 cm) C3 C1 C10 C2 C12 C9 C4 C7 R6 C5 C15 C11 B1 C6 R1 R2 R3 R4 R5 L1 C13 C16 L2 C8 C14 D74527 AFT05MS003N Rev. 0 Figure 14. AFT05MS003N Narrowband Production Test Circuit Component Layout — 520 MHz Table 13. AFT05MS003N Narrowband Production Test Circuit Component Designations and Values — 520 MHz Part Description Part Number Manufacturer B1 Short RF Bead 2743019447 Fair--Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C11 0.1 F Chip Capacitors CDR33BX104AKWS Kemet C3, C10 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C9 180 pF Chip Capacitors ATC100B181JT300XT ATC C5 68 pF Chip Capacitor ATC100B680JT500XT ATC C6, C7 18 pF Chip Capacitors ATC100B180JT500XT ATC C8 4.7 pF Chip Capacitor ATC100B4R7JT500XT ATC C12 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16--RH Multicomp C13 13 pF Chip Capacitor ATC100B130JT500XT ATC C14 16 pF Chip Capacitor ATC100B160JT500XT ATC C15 3.3 pF Chip Capacitor ATC100B3R3JT500XT ATC C16 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC L1 8 nH, 3 Turn Inductor A03TKLC Coilcraft L2 5 nH, 2 Turn Inductor A02TKLC Coilcraft R1, R2, R3, R4, R5, R6 3.9 , 1/4 W Chip Resistors RC1206FR--073R9L Yageo PCB Rogers RO4350, 0.030, r = 3.66 D74527 MTL AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 13 TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND PRODUCTION TEST FIXTURE 5 Pout, OUTPUT POWER (WATTS) VDD = 7.5 Vdc, f = 520 MHz 4 Pin = 14.0 dBm 3 Pin = 11.0 dBm 2 1 0 1.5 1 2.5 2 3 3.5 4 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 15. Output Power versus Gate--Source Voltage 90 24 80 Gps 18 70 15 60 12 50 9 40 D 6 30 VDD = 7.5 Vdc, IDQ = 100 mA f = 520 MHz 3 Pout 0 80 40 0 120 20 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) 21 10 160 Pin, INPUT POWER (mW) Figure 16. Power Gain, Output Power and Drain Efficiency versus Input Power f MHz Zsource  Zload  520 1.86 + j4.46 4.30 + j3.43 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 17. Narrowband Series Equivalent Source and Load Impedance — 520 MHz AFT05MS003N 14 RF Device Data Freescale Semiconductor, Inc. 1.90 3.00 2X 45 4.35 2X 1.25 3X 0.70 0.85 2X 1.50 Figure 18. PCB Pad Layout for SOT--89A AFT503 AWLYWZ Figure 19. Product Marking AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 15 PACKAGE DIMENSIONS Pin 1. Drain 2. Gate 3. Source AFT05MS003N 16 RF Device Data Freescale Semiconductor, Inc. AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 17 AFT05MS003N 18 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Aug. 2015 Description  Initial Release of Data Sheet AFT05MS003N RF Device Data Freescale Semiconductor, Inc. 19 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. AFT05MS003N Document Number: AFT05MS003N Rev. 0, 8/2015 20 RF Device Data Freescale Semiconductor, Inc.