BGD814_01

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). PINNING - SOT115J PIN 1 2, 3 5 7, 8 9 input common +VB common output DESCRIPTION handbook, halfpage 1 2 3 5 7 8 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 19.7 20.5 380 MAX. 20.3 21.5 410 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb supply voltage RF input voltage storage temperature operating mounting base temperature PARAMETER − − −40 −20 MIN. MAX. 30 70 +100 +100 V dBmV °C °C UNIT 2001 Nov 01 2 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 CHARACTERISTICS Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to 870 MHz; note 1 f = 45 to 100 MHz f = 100 to 800 MHz f = 800 to 870 MHz s11 input return losses f = 45 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s22 output return losses f = 45 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s21 CTB phase response composite triple beat f = 50 MHz 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz CONDITIONS MIN. 19.7 20.5 0.5 − − −0.4 25 22 19 17 17 16 15 12 24 22 17 18 16 15 15 13 −45 − − − TYP. − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − MAX. 20.3 21.5 1.5 ±0.25 ±0.5 0.1 − − − − − − − − − − − − − − − − +45 −66 −60.5 −56 −55.5 −65 −66 −62.5 −61 −57 −66 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dB dB dB dB dB dB 112 chs; fm = 547.25 MHz; Vo = 50.2 dBmV at − 745 MHz; note 2 79 chs; fm = 331.25 MHz; Vo = 47.3 dBmV at 547 MHz; note 3 Xmod cross modulation 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz − − − − 112 chs; fm = 745.25 MHz; Vo = 50.2 dBmV at − 745 MHz; note 2 79 chs; fm = 445.25 MHz; Vo = 47.3 dBmV at 547 MHz; note 3 − 2001 Nov 01 3 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 SYMBOL CSO PARAMETER composite second order distortion CONDITIONS 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz 112 chs; fm = 210 MHz; Vo = 50.2 dBmV at 745 MHz; note 2 79 chs; fm = 210 MHz; Vo = 47.3 dBmV at 547 MHz; note 3 MIN. − − − − − − 64 48 50 − − − − 380 TYP. − − − − − − − − − − − − − 395 MAX. −68 −61 −57 −56 −64 −69 − − − 5.5 5.5 6.5 7.5 410 UNIT dB dB dB dB dB dB dBmV dBmV dBmV dB dB dB dB mA d2 Vo second order distortion output voltage note 4 dim = −60 dB; note 5 CTB compression = 1 dB; 132 chs flat; f = 859.25 MHz CSO compression = 1 dB; 132 chs flat; f = 860.5 MHz NF noise figure f = 50 MHz f = 550 MHz f = 750 MHz f = 870 MHz Itot Notes total current consumption (DC) note 6 1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz. 2. Tilt = 10.2 dB (55 to 745 MHz). 3. Tilt = 7.3 dB (55 to 547 MHz). 4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 5. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo − 6 dB; fr = 860.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 849.25 MHz. 6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. 2001 Nov 01 4 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 handbook, halfpage −50 MLD345 52 Vo (dBmV) 48 handbook, halfpage −40 MLD346 52 Vo (dBmV) 48 CTB (dB) −60 (1) Xmod (dB) −50 (1) −70 44 −60 (2) 44 (2) −80 (3) (4) 40 −70 (3) (4) 40 −90 0 200 400 600 36 1000 800 f (MHz) −80 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.2 Composite triple beat as a function of frequency under tilted conditions. Fig.3 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage −60 MLD347 52 Vo (dBmV) 48 CSO (dB) −70 (1) (2) −80 (3) 44 −90 (4) 40 −100 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.4 Composite second order distortion as a function of frequency under tilted conditions. 2001 Nov 01 5 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 handbook, halfpage −40 MLD348 52 Vo (dBmV) 48 handbook, halfpage −40 MLD349 52 Vo (dBmV) 48 CTB (dB) −50 (1) Xmod (dB) −50 (1) (2) −60 (2) (3) (4) 44 −60 (3) (4) 44 −70 40 −70 40 −80 0 200 400 600 36 1000 800 f (MHz) −80 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.5 Composite triple beat as a function of frequency under tilted conditions. Fig.6 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage −50 MLD350 52 Vo (dBmV) 48 CSO (dB) −60 (1) (2) −70 (3) 44 −80 (4) 40 −90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.7 Composite second order distortion as a function of frequency under tilted conditions. 2001 Nov 01 6 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9 c U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8 mm 20.8 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 38.1 25.4 10.2 4.2 44.75 6-32 0.25 UNC OUTLINE VERSION SOT115J REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-06 2001 Nov 01 7 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 2001 Nov 01 8 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 NOTES 2001 Nov 01 9 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 NOTES 2001 Nov 01 10 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 NOTES 2001 Nov 01 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/04/pp12 Date of release: 2001 Nov 01 Document order number: 9397 750 08857