BLS6G3135-120

BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 01 — 14 August 2007 Preliminary data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 3.1 to 3.5 VDS (V) 32 PL (W) 120 Gp (dB) 11 ηD (%) 43 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 1.3 Applications I S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLS6G3135-120 (SOT502A) 1 3 2 2 3 sym112 1 BLS6G3135S-120 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Package Name BLS6G3135-120 Description Version flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads earless flanged LDMOST ceramic package; 2 leads SOT502B Type number BLS6G3135S-120 - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Min −0.5 −65 Max 60 +13 7.2 +150 225 Unit V V A °C °C BLS6G3135-120_6G3135S-120_1 © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 2 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 5. Thermal characteristics Table 5. Zth(j-mb) Thermal characteristics Conditions Tcase = 85 °C; PL = 120 W tp = 300 µs; δ = 10 % tp = 100 µs; δ = 20 % 0.29 0.40 K/W 0.30 0.41 K/W Typ Max Unit transient thermal impedance from junction to mounting base Symbol Parameter 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 180 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 8.3 V; VDS = 0 V VDS = 10 V; ID = 9 A VGS = VGS(th) + 3.75 V; ID = 6.3 A Min 60 1.4 27 Typ 1.8 33 13 0.085 Max 2.3 5 450 Unit V V µA A nA S 0.160 Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol PL VCC Gp IRL PL(1dB) ηD tr tf Parameter output power supply voltage power gain input return loss output power at 1 dB gain compression drain efficiency rise time fall time PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W Conditions Min 9.5 6 39 Typ 120 11 10 130 43 20 6 Max 32 50 50 Unit W V dB dB W % ns ns BLS6G3135-120_6G3135S-120_1 © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 3 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Typical impedance ZS Ω 2.7 − j5.4 3.3 − j4.7 4.2 − j4.4 5.2 − j4.8 5.7 − j6.2 ZL Ω 5.9 − j5.9 4.5 − j6.2 3.5 − j6.0 2.7 − j5.6 2.0 − j5.2 Table 8. f GHz 3.1 3.2 3.3 3.4 3.5 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 300 µs; δ = 10 %. 001aag823 001aag824 13 Gp (dB) 11 ηD Gp 50 ηD (%) 40 14 Gp (dB) (1) (2) (3) 10 9 30 7 20 6 5 10 3 3 3.2 3.4 f (GHz) 0 3.6 2 0 40 80 120 PL (W) 160 VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %; PL = 120 W. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. Fig 2. Power gain and drain efficiency as functions of frequency; typical values BLS6G3135-120_6G3135S-120_1 Fig 3. Power gain as a function of load power; typical values © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 4 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 50 ηD (%) 40 001aag825 (1) (2) (3) 160 (2) 001aag826 PL (W) 120 (1) (3) 30 80 20 40 10 0 0 40 80 120 PL (W) 160 0 0 5 10 15 Pi (W) 20 (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. Fig 4. Drain efficiency as a function of load power; typical values 13 Gp (dB) 11 ηD Gp 001aag827 Fig 5. Load power as a function of input power; typical values 14 Gp (dB) (1) 50 ηD (%) 40 001aag828 (2) (3) 10 9 30 7 20 6 5 10 3 3 3.2 3.4 f (GHz) 0 3.6 2 0 40 80 120 PL (W) 160 VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %; PL = 120 W. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. Fig 6. Power gain and drain efficiency as functions of frequency; typical values Fig 7. Power gain as a function of load power; typical values BLS6G3135-120_6G3135S-120_1 © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 5 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 50 ηD (%) 40 001aag829 (1) (2) 160 PL (W) 120 (2) 001aag830 (3) (1) (3) 30 80 20 40 10 0 0 40 80 120 PL (W) 160 0 0 5 10 15 Pi (W) 20 (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. Fig 8. Drain efficiency as a function of load power; typical values Fig 9. Load power as a function of input power; typical values BLS6G3135-120_6G3135S-120_1 © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 6 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 10. Package outline SOT502A BLS6G3135-120_6G3135S-120_1 © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 7 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 Fig 11. Package outline SOT502B BLS6G3135-120_6G3135S-120_1 © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 8 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 9. Abbreviations Table 9. Acronym LDMOS LDMOST RF S-Band VSWR Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Lateral Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio 10. Revision history Table 10. Revision history Release date 20070814 Data sheet status Preliminary data sheet Change notice Supersedes Document ID BLS6G3135-120_6G3135S-120_1 BLS6G3135-120_6G3135S-120_1 © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 9 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BLS6G3135-120_6G3135S-120_1 © NXP B.V. 2007. All rights reserved. Preliminary data sheet Rev. 01 — 14 August 2007 10 of 11 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 August 2007 Document identifier: BLS6G3135-120_6G3135S-120_1