BUT11AI,127

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector Saturation current Inductive fall time VBE = 0 V 2.5 0.08 1000 450 5 10 100 1.5 V V A A W V A µs PINNING - TO220AB PIN base 2 collector 3 emitter tab ICon = 2.5 A; IBon = 0.5 A PIN CONFIGURATION DESCRIPTION 1 Tmb ≤ 25 ˚C IC = 2.5 A; IB = 0.33 A 0.15 SYMBOL c tab b collector e 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1000 450 5 10 2 4 100 150 150 V V A A A A W ˚C ˚C TYP. MAX. UNIT - 1.25 K/W - 60 K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient April 2002 CONDITIONS in free air 1 Rev 2.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 ICES ICES Collector cut-off current IEBO VCEOsust Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFEsat Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 9.0 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 2.5 A;IB = 0.33 A IC = 2.5 A;IB = 0.33 A IC = 5 mA; VCE = 5 V IC = 0.5 A; VCE = 5 V IC = 2.5 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 450 - 10.0 - mA V 10 14 9 20 22 13 1.5 1.3 35 35 17 V V TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Switching times resistive load ICon = 2.5 A; IBon = 0.5 A; -IBoff = 0.5 A ton Turn-on time 0.6 1.0 µs ts tf Turn-off storage time Turn-off fall time 3.4 0.6 4.0 0.8 µs µs 1.1 80 1.4 150 µs ns 1.2 140 1.5 300 µs ns Switching times inductive load ts tf Turn-off storage time Turn-off fall time ts tf Turn-off storage time Turn-off fall time ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope Vertical 300R 30-60 Hz 100 1R 0 6V VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). April 2002 2 Rev 2.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI VCC ICon 90 % IC RL VIM 10 % RB 0 T.U.T. tf ts t toff tp IBon IB T t -IBoff Fig.6. Switching times waveforms with inductive load. Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ICon 90 % 90 % Normalised Derating % 120 with heatsink compound 110 100 90 IC 80 70 10 % 60 ts ton tf toff 40 IBon IB P tot 50 30 20 10 % tr 10 0 30ns 0 -IBoff 20 40 60 80 Ths / C 100 120 140 Fig.7. Normalised power derating and second breakdown curves. Fig.4. Switching times waveforms with resistive load. VCC 6 IC / A BUT11AX 5 4 LC 3 IBon 2 LB T.U.T. 1 -VBB 0 0 VCE / V 800 1200 Fig.8. Reverse bias safe operating area. Tj ≤ Tj max Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH April 2002 400 3 Rev 2.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 h FE BUT11AI BUT11AX 10 Zth / (K/W) 5V 1 1V 10 D= 0.5 0.1 1 0.01 0.1 1 IC / A 10 100 PD tp D= 0.01 1E-06 1E-04 1E-02 t/s tp T t T Fig.9. Typical DC current gain. hFE = f(IC); parameter VCE 100 0.2 0.1 0.05 0.02 0 1E+00 Fig.11. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T IC / A = 0.01 ICM max 10 IC max tp = 10 us II 100 us (1) 1 1 ms 10 ms I 0.1 (2) 500 ms DC III 0.01 1 10 1000 100 VCE / V Fig.10. Forward bias safe operating area. Ths ≤ 25 ˚C (1) (2) I II III NB: April 2002 Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. 4 Rev 2.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.12. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 2002 5 Rev 2.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 PRODUCT STATUS3 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. April 2002 6 Rev 2.000