HEF4585BT,653

HEF4585B 4-bit magnitude comparator Rev. 6 — 21 November 2011 Product data sheet 1. General description The HEF4585B is a 4-bit magnitude comparator that compares two 4-bit words, A and B, and determines whether A is greater than B, A is equal to B, or A is less than B. Each word has four parallel inputs (A0 to A3 and B0 to B3) with A3 and B3 being the most significant inputs. Three outputs are provided: A greater than B (QA>B), A less than B (QAB, IAB = HIGH and IAB IA B2 X X H X X H L L A2 < B2 X X X X X L H L A2 = B2 A1 > B1 X H X X H L L A1 < B1 X X X X L H L A1 = B1 A0 > B0 H X X H L L A0 < B0 X X X L H L A0 = B0 X L H L L H H L L H L L X H L L H L X H H L H H L L L L L L [2] [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care. [2] The first 11 lines describe the normal operation under all conditions that will occur in a single device or in a serial expansion scheme. The last 2 lines describe the operation under abnormal conditions on the cascading inputs. These conditions occur when the parallel expansion technique is used. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDD supply voltage IIK input clamping current VI input voltage IOK output clamping current II/O Conditions VI < 0.5 V or VI > VDD + 0.5 V Min Max Unit 0.5 +18 V - 10 mA 0.5 VDD + 0.5 V - 10 mA input/output current - 10 mA Tstg storage temperature 65 +150 C Tamb ambient temperature Ptot total power dissipation P power dissipation VO < 0.5 V or VO > VDD + 0.5 V 40 +85 C DIP16 package [1] - 750 mW SO16 package [2] - 500 mW - 100 mW per output [1] For DIP16 package: Ptot derates linearly with 12 mW/K above 70 C. [2] For SO16 package: Ptot derates linearly with 8 mW/K above 70 C. HEF4585B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 16 HEF4585B NXP Semiconductors 4-bit magnitude comparator 8. Recommended operating conditions Table 5. Recommended operating conditions Symbol Parameter VDD Conditions Min Typ Max Unit supply voltage 3 - 15 V VI input voltage 0 - VDD V Tamb ambient temperature in free air 40 - +85 C t/V input transition rise and fall rate VDD = 5 V - - 3.75 s/V VDD = 10 V - - 0.5 s/V VDD = 15 V - - 0.08 s/V 9. Static characteristics Table 6. Static characteristics VSS = 0 V; VI = VSS or VDD unless otherwise specified. Symbol Parameter VIH VIL VOH VOL IOH IOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage HIGH-level output current LOW-level output current II input leakage current IDD supply current Conditions IO < 1 A IO < 1 A IO < 1 A Tamb = 40 C Tamb = 25 C VDD Max Min Max Min Max 5V 3.5 - 3.5 - 3.5 - V 10 V 7.0 - 7.0 - 7.0 - V 15 V 11.0 - 11.0 - 11.0 - V 5V - 1.5 - 1.5 - 1.5 V 10 V - 3.0 - 3.0 - 3.0 V 15 V - 4.0 - 4.0 - 4.0 V 5V 4.95 - 4.95 - 4.95 - V 10 V 9.95 - 9.95 - 9.95 - V 15 V 14.95 - 14.95 - 14.95 - V 5V - 0.05 - 0.05 - 0.05 V 10 V - 0.05 - 0.05 - 0.05 V 15 V - 0.05 - 0.05 - 0.05 V VO = 2.5 V 5V - 1.7 - 1.4 - 1.1 mA VO = 4.6 V 5V - 0.52 - 0.44 - 0.36 mA IO < 1 A VO = 9.5 V 10 V - 1.3 - 1.1 - 0.9 mA VO = 13.5 V 15 V - 3.6 - 3.0 - 2.4 mA VO = 0.4 V 5V 0.52 - 0.44 - 0.36 - mA VO = 0.5 V 10 V 1.3 - 1.1 - 0.9 - mA VO = 1.5 V 15 V 3.6 - 3.0 - 2.4 - mA 15 V - 0.3 - 0.3 - 1.0 A 5V - 20 - 20 - 150 A 10 V - 40 - 40 - 300 A - 80 - 80 - 600 A - - - 7.5 - - pF IO = 0 A 15 V CI input capacitance HEF4585B Product data sheet Tamb = 85 C Unit Min - All information provided in this document is subject to legal disclaimers. Rev. 6 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 16 HEF4585B NXP Semiconductors 4-bit magnitude comparator 10. Dynamic characteristics Table 7. Dynamic characteristics VSS = 0 V; Tamb = 25 C; for test circuit see Figure 5 unless otherwise specified. Symbol Parameter Conditions[1][2] VDD Extrapolation formula[3] Min Typ Max Unit tPHL HIGH to LOW propagation delay An, Bn to Qn; see Figure 4 5V 133 ns + (0.55 ns/pF)CL - 160 320 ns 10 V 54 ns + (0.23 ns/pF)CL - 65 130 ns 15 V 37 ns + (0.16 ns/pF)CL - 45 90 ns 5V 83 ns + (0.55 ns/pF)CL - 110 220 ns 10 V 34 ns + (0.23 ns/pF)CL - 45 90 ns 15 V 22 ns + (0.16 ns/pF)CL - 30 60 ns 5V 123 ns + (0.55 ns/pF)CL - 150 300 ns 10 V 49 ns + (0.23 ns/pF)CL - 60 120 ns 15 V 37 ns + (0.16 ns/pF)CL - 45 90 ns In to Qn; see Figure 4 LOW to HIGH propagation delay tPLH An, Bn to Qn; see Figure 4 In to Qn; see Figure 4 transition time tt [1] see Figure 4 5V 93 ns + (0.55 ns/pF)CL - 120 240 ns 10 V 39 ns + (0.23 ns/pF)CL - 50 100 ns 15 V 27 ns + (0.16 ns/pF)CL - 35 70 ns 5V 10 ns + (1.00 ns/pF)CL - 60 120 ns 10 V 9 ns + (0.42 ns/pF)CL - 30 60 ns 15 V 6 ns + (0.28 ns/pF)CL - 20 40 ns Qn is QA>B, QAB, IAB, QAB, QAB H IA=B L IAB IA>B A3 QA=B IA=B B3 QAB A3 QA=B IA=B B3 QAB A3 QA=B A=B B3 QA