MC13917-1900EVK

Freescale Semiconductor Data Sheet: Advance Information Document Number: MBC13917 Rev. 1.0, 12/2010 MBC13917 Package Information Plastic Package: MLPD-6 1.5 mm x 2.0 mm Case: 2129-01 MBC13917 General Purpose SiGe:C RF Cascode Low Noise Amplifier 1 Introduction The MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. This is the leadless package version of the MBC13916 device. The MBC13917 is designed for a wide range of general purpose RF applications and has excellent high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility. 1.1 Ordering Information Device Device Marking or Operating Temperature Range Package MBC13917EP 917 MLPD-6 Contents 1 2 3 4 5 6 7 8 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Electrical Characteristics . . . . . . . . . . . . . . . . . .3 Scattering and Noise Parameters . . . . . . . . . . . .6 Application Circuits . . . . . . . . . . . . . . . . . . . . . .24 Printed Circuit Board and Bill of Materials . . .33 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 Product Documentation . . . . . . . . . . . . . . . . . . .38 Revision History . . . . . . . . . . . . . . . . . . . . . . . . .38 Features The MBC13917 has the following features: • Usable frequency range = 100 MHz to 2500 MHz • 27 dB typical gain at 434 MHz, Vcc = 2.7V • NFmin (device level) = 0.95 dB @ 434 MHz • NFmin (device level) = 0.95 dB @ 900 MHz • 6.5 dBm typical output power at -10 dBm Pin at 900 MHz, Vcc = 2.7V This document contains information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2006–2010. All rights reserved. Introduction • • • • • 1.2 46 dB typical reverse isolation (device level) at 434 MHz, Vcc = 2.7V 4.7 mA typical bias current at Vcc = 2.7V 2.7V to 3.3V supply Industry standard MLPD-6 leadless package Available only in tape and reel packaging Applications Ideal for use in any RF product that operates between 100 MHz and 2.5 GHz, and may be applied in: • Buffer amplifiers • Mixers • IF amplifiers • Voltage controlled oscillators (VCOs) • Low power amplifiers • Gain block in RF end products • Smart metering • Industrial—scientific and medical (ISM) • Consumer—WLAN, 802.11 b/g • Auto—TPMS, RKE, GPS, active antennas, wireless security Figure 1 shows a simplified block diagram of the MBC13917 with the pinouts and location of the Pin 1 designator on the package. RF IN Gnd A NC 1 6 2 5 3 4 Gnd B RF OUT NC Figure 1. Functional Block Diagram MBC13917 Advance Information, Rev. 1.0 2 Freescale Semiconductor Electrical Characteristics 2 Electrical Characteristics Table 1 lists the recommended operating conditions of the MBC13917 device. Table 1. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit RF Frequency fRF 100 — 2500 MHz Supply Voltage VCC 2.1 2.7 3.3 Vdc Table 2. lists the maximum ratings for the device. Table 2. Maximum Ratings (TA = 25°C, unless otherwise noted) Rating Symbol Value Unit Supply Voltage VCC 3.5 Vdc RF Input Power PRF 10 dBm Power Dissipation PDIS 100 mW Icc 20 mA Thermal Resistance, Junction to Case RθJC 400 °C/W Storage Temperature Range Tstg -65 to 150 °C Operating Ambient Temperature Range TA -40 to 85 °C Operating Case Temperature Tc -40 to 100 °C Supply Current Note: Maximum Ratings and ESD 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and Machine Model (MM) ≤50 V. Additional ESD data is available upon request. Table 3 lists electrical characteristics associated with noise performance measured in a 50 Ω system. Additional noise parameters are listed in Table 9. Table 3. Device Level Characteristics (Vcc = 2.7V, TA = 25°C, measured in S-parameter test fixture, unless otherwise noted) Characteristic Symbol Min Typ Max 21.7 23.7 — 21.4 23.4 — f= 900 MHz 18.7 20.7 — f= 1900 MHz 12.6 14.6 — Unit Insertion Gain f= 350 MHz f= 430 MHz |S21| dB See note below MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 3 Electrical Characteristics Table 3. Device Level Characteristics (continued) (Vcc = 2.7V, TA = 25°C, measured in S-parameter test fixture, unless otherwise noted) Characteristic Symbol Min Typ Max 34 36.4 — 33.2 35.6 — 26.5 28.9 — 15 17.6 — — 1.0 1.35 — 0.95 1.30 f= 900 MHz — 0.95 1.30 f= 1900 MHz — 1.5 1.85 7.7 9.7 — 8.3 10.3 — f= 900 MHz 11.3 13.3 — f= 1900 MHz 11.6 13.6 — -49 -53 — -48 -52 — f= 900 MHz -42 -46 — f= 1900 MHz -40 -44 — Unit Maximum Stable Gain and Maximum Available Gain (Note1) f= 350 MHz MSG, MAG f= 430 MHZ f= 900 MHz f= 1900 MHZ dB Minimum Noise Figure f= 350 MHz f= 430 MHZ NFmin dB Output Third Order Intercept f= 350 MHz f= 430 MHZ OIP3 dBm Reverse Isolation f= 350 MHz f= 430 MHZ S12 dB Note: Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: if K>1, MAG=|S21/S12(K ±SqRt(K2-1)| if K 27 dB for 350 MHz. Return losses and gain are similar for 350 MHz–370 MHz. • Component C4 has the greatest impact on return losses, NF, and gain, by moving the input and output on the Smith chart. • Component L1 can be lowered to improve NF, by trading off S11 return loss. • Gain, OIP3 and P1dBoutput can be increased, by decreasing the resistor value at the output (without impacting NF or return losses). This application is intended for a range of designs, including TETRA land mobile and base station transceivers. Typical performance that can be expected from this circuit at 2.7V is listed in Table 10. Figure 16 is the 350 MHz–370 MHz application schematic with package pinouts and the circuit component topology. Vcc C1 47 pF L1 39 nH Gnd RF IN 1 6 2 5 L2 47 nH R1 24 ohm Gnd NC 3 4 C2 100 pF C4 2.4 pF C3 .1uF RF OUT C5 3 pF NC . Figure 16. 350 MHz–370 MHz Application Schematic MBC13917 Advance Information, Rev. 1.0 24 Freescale Semiconductor Application Circuits Table 10 provides the electrical characteristics for the 350 MHz–370 MHz application. Table 10. Typical 350–370 MHz Evaluation Board Performance Characteristic 350 MHz (Figure 16) Vcc 2.7V TA = 25°C 370 MHz (Figure 16) Vcc 2.7V TA = 25°C 350 MHz (Figure 16) Vcc 2.7V TA = 85°C Symbol Min Typ Max Unit Supply Current Icc — 4.7 5.6 mA RF Gain G 26.6 27.7 — dB Noise Figure NF — 2.1 2.5 dB OIP3 8 9.5 — dBm P1dBoutput -1 1 — dBm Input Return Loss S11 — -8 -7 dB Small Signal Gain S21 26 27 — dB Reverse Isolation S12 — -47 -46 dB Output Return Loss S22 — -9 -7.5 dB Supply Current Icc — 4.7 5.6 mA RF Gain G 27.5 28.6 — dB Noise Figure NF — 2.2 2.6 dB OIP3 9.2 10.7 — dBm P1dBoutput 0.7 2.2 — dBm Input Return Loss S11 — -12 -10 dB Small Signal Gain S21 27 28.5 — dB Reverse Isolation S12 — -47 -46 dB Output Return Loss S22 — -12 -10 dB Supply Current Icc — 5.3 6.2 mA RF Gain G 25.6 26.7 — dB Noise Figure NF — 2.4 2.75 dB OIP3 9.2 10.7 — dBm P1dBoutput 0 1.8 — dBm Input Return Loss S11 — -8 -7 dB Small Signal Gain S21 25.5 26.6 — dB Reverse Isolation S12 — -47.5 -46.5 dB Output Return Loss S22 — -9.7 -8 dB Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 25 Application Circuits Table 10. Typical 350–370 MHz Evaluation Board Performance (continued) Characteristic 350 MHz (Figure 16) Vcc 2.7V TA = -40°C Symbol Min Typ Max Unit Supply Current Icc — 4.3 5.2 mA RF Gain G 27.8 29 — dB Noise Figure NF — 1.7 2 dB OIP3 7.6 9 — dBm P1dBoutput 0 0.9 — dBm Input Return Loss S11 — -8.7 -7 dB Small Signal Gain S21 27.4 28.4 — dB Reverse Isolation S12 — -47.8 -46.8 dB Output Return Loss S22 — -9.6 -8.5 dB Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression MBC13917 Advance Information, Rev. 1.0 26 Freescale Semiconductor Application Circuits 4.2 434 MHz Application This application circuit was designed to provide NF = 2.3 dB, S21 gain > 27 dB for 434 MHz. • Component C4 has the greatest impact on return losses, NF, and gain, by moving the input and output on the Smith chart. • Component L1 can be lowered to improve NF, by trading off S11 return loss. • Gain, OIP3 and P1dBoutput can be increased, by decreasing the resistor at the output (without impacting NF or return losses). This application is intended for a range of designs, including TPMS, RKE, RF metering and key fob designs using a battery. Figure 17 is the 434 MHz application schematic with package pinouts and the circuit component topology. Vcc C1 47 pF L1 39 nH Gnd RF IN 1 6 2 5 C2 100 pF L2 33 nH RF OUT R1 24 ohm Gnd NC 3 4 C3 .1uF C4 2.4 pF NC Figure 17. 434 MHz Application Schematic Typical performance that can be expected from this circuit at 2.7V is listed in Table 11. Table 11. Typical 434 MHz Evaluation Board Performance Characteristic 434 MHz (Figure 17) Vcc 2.7V TA = 25°C Symbol Min Typ Max Unit Supply Current Icc — 4.7 5.6 mA RF Gain G 26 27 — dB Noise Figure NF — 2.3 2.65 dB OIP3 9.5 10.9 — dBm P1dBoutput 1 2.2 — dBm Input Return Loss S11 — -15 -10 dB Small Signal Gain S21 26 27 — dB Reverse Isolation S12 — -46 -45 dB Output Return Loss S22 — -19 -16 dB Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 27 Application Circuits Table 11. Typical 434 MHz Evaluation Board Performance (continued) Characteristic 434 MHz (Figure 17) Vcc 2.7V TA = 85°C 434 MHz (Figure 17) Vcc 2.7V TA = -40°C Symbol Min Typ Max Unit Supply Current Icc — 5.3 6.2 mA RF Gain G 25.5 26.5 — dB Noise Figure NF — 2.65 3.05 dB OIP3 10 11.3 — dBm P1dBoutput 1 2 — dBm Input Return Loss S11 — -15.5 -12 dB Small Signal Gain S21 24.8 25.9 — dB Reverse Isolation S12 — -45 -44 dB Output Return Loss S22 — -17.8 -14 dB Supply Current Icc — 4.3 5.2 mA RF Gain G 27.5 28.5 — dB Noise Figure NF — 1.96 2.3 dB OIP3 8.5 10.3 — dBm P1dBoutput 0.8 1.8 — dBm Input Return Loss S11 — -16 -10 dB Small Signal Gain S21 26.7 27.8 — dB Reverse Isolation S12 — -44 -44 dB Output Return Loss S22 — -20 -16 dB Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression MBC13917 Advance Information, Rev. 1.0 28 Freescale Semiconductor Application Circuits 4.3 900 MHz Application This application was designed to provide NF = 1.2 dB, S21 gain > 24 dB, OIP3 of 12.4 dBm with return losses better than -10 dB at 900 MHz. Figure 18 is the 900 MHz application schematic with package pinouts and the circuit component topology. Vcc L1 6.8 nH C1 47 pF Gnd RF IN 1 6 2 5 C2 47 pF L2 10 nH RF OUT Gnd C5 3 pF C4 2 pF NC 3 C3 .1uF NC 4 . Figure 18. 900 MHz Application Schematic Typical performance that can be expected from this circuit at 2.7V is listed in Table 12. Table 12. Typical 900 MHz Evaluation Board Performance Characteristic 900 MHz (Figure 18) Vcc 2.7V TA = 25°C Symbol Min Typ Max Unit Supply Current Icc — 4.7 5.6 mA RF Gain G 22.5 24 — dB Noise Figure NF — 1.19 1.5 dB OIP3 11 12.4 — dBm P1dBoutput 2 3.5 — dBm Input Return Loss S11 — -10 -9 dB Small Signal Gain S21 23 24 — dB Reverse Isolation S12 — -40 -39 dB Output Return Loss S22 — -23 -16 dB Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 29 Application Circuits Table 12. Typical 900 MHz Evaluation Board Performance (continued) Characteristic 900 MHz (Figure 18) Vcc 2.7V TA = 85°C 900 MHz (Figure 18) Vcc 2.7V TA = -40°C Symbol Min Typ Max Unit Supply Current Icc — 5.3 6.2 mA RF Gain G 21.5 23 — dB Noise Figure NF — 1.3 1.65 dB OIP3 10 11.6 — dBm P1dBoutput 1 2.5 — dBm Input Return Loss S11 — -9.5 -9 dB Small Signal Gain S21 21 22.8 — dB Reverse Isolation S12 — -40.7 -39.5 dB Output Return Loss S22 — -24.7 -18 dB Supply Current Icc — 4.3 5.2 mA RF Gain G 24.1 25.6 — dB Noise Figure NF — 0.95 1.3 dB OIP3 10 11.4 — dBm P1dBoutput 1.2 2.65 — dBm Input Return Loss S11 — -11.5 -10 dB Small Signal Gain S21 24 25.5 — dB Reverse Isolation S12 — -41 -40 dB Output Return Loss S22 — -18.8 -10 dB Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression Output 3rd Order Intercept Point Power Output at 1 dB Gain Compression MBC13917 Advance Information, Rev. 1.0 30 Freescale Semiconductor Application Circuits 4.4 1900 MHz Application This application was designed to provide NF = 2.0 dB, S21 gain > 14.5 dB, OIP3 of 8.5 dBm with return losses better than -10 dB at 1900 MHz. Typical performance that can be expected from this circuit at 2.7V is listed in Table 13. Figure 19 is the 1900 MHz application schematic with package pinouts and the circuit component topology. L1 3.3 nH C1 3.3 pF Gnd RF IN 1 6 2 5 L3 5.6 nH Gnd NC 3 C3 33 pF L2 10 nH C4 .1uF RF OUT C2 2.7 pF NC 4 . Figure 19. 1900 MHz Application Schematic Table 13 provides the typical performance of a 1900 MHz application. Table 13. Typical 1900 MHz Evaluation Board Performance Characteristic 1900 MHz (Figure 19) Vcc 2.7V TA = 25°C Symbol Min Typ Max Unit Supply Current Icc — 4.7 5.6 mA RF Gain G 13.5 14.9 — dB Noise Figure NF — 1.8 2.15 dB OIP3 7 8.5 — dBm P1dBoutput -2.5 -1.1 — dBm Input Return Loss S11 — -13 -10 dB Small Signal Gain S21 13.8 14.8 — dB Reverse Isolation S12 — -42.5 -41.5 dB Output Return Loss S22 — -11.8 -10 dB Output 3rd Order Intercept Point Power Output at 1.0 dB Gain Compression MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 31 Application Circuits Table 13. Typical 1900 MHz Evaluation Board Performance (continued) Characteristic 1900 MHz (Figure 19) Vcc 2.7V TA = 85°C 1900 MHz (Figure 19) Vcc 2.7V TA = -40°C Symbol Min Typ Max Unit Supply Current Icc — 5.3 6.2 mA RF Gain G 12.7 13.7 — dB Noise Figure NF — 2.5 2.85 dB OIP3 7 8.3 — dBm P1dBoutput -2.5 -1 — dBm Input Return Loss S11 — -10.7 -9 dB Small Signal Gain S21 12.6 13.6 — dB Reverse Isolation S12 — -41.7 -40.7 dB Output Return Loss S22 — -13 -10 dB Supply Current Icc — 4.3 5.2 mA RF Gain G 15.4 16.4 — dB Noise Figure NF — 1.48 1.8 dB OIP3 7.1 8.1 — dBm P1dBoutput -2.5 -1.3 — dBm Input Return Loss S11 — -14 -10 dB Small Signal Gain S21 15.1 16.1 — dB Reverse Isolation S12 — -41.5 -40.5 dB Output Return Loss S22 — -10 -9 dB Output 3rd Order Intercept Point Power Output at 1.0 dB Gain Compression Output 3rd Order Intercept Point Power Output at 1.0 dB Gain Compression MBC13917 Advance Information, Rev. 1.0 32 Freescale Semiconductor Printed Circuit Board and Bill of Materials 5 Printed Circuit Board and Bill of Materials Figure 20 is the drawing of the printed circuit board. Figure 21 through Figure 26 are drawings of the evaluation boards used for each of the application frequency designs described in Section 4. These drawings show the boards with the circuit matching components placed and identified. Note: Dimensions are in inches and [mm]. Soldering Note: The center flag under the part must be soldered down to ground on the board. Figure 20. Printed Circuit Board Figure 21 is a picture of a typical assembled evaluation board similar to the ones in the evaluation kits. Figure 21. Typical Application Circuit Evaluation Board MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 33 Printed Circuit Board and Bill of Materials Figure 22. 350 MHz Application Board Drawing Figure 23. 434 MHz Application Board Drawing Figure 24. 900 MHz Application Board Drawing MBC13917 Advance Information, Rev. 1.0 34 Freescale Semiconductor Printed Circuit Board and Bill of Materials Figure 25. 1900 MHz Application Board Drawing The Bill of Materials for the application frequency circuit boards is listed in Table 14. The value, case size, manufacturer and circuit function of each component is provided. Table 14. Bill of Materials for the Application Circuit Boards 350–370 MHz Application Circuit (Figure 23) 434 MHz Application Circuit (Figure 23) Component Value Case Manufacturer Comments C1 47 pF 402 Murata Input match, DC block C2 100 pF 402 Murata 350 MHz bypass C3 0.1 uF 402 Murata RF bypass C4 3.6 pF 402 Murata Output match, DC block C5 3 pF 402 Murata Output match L1 39 nH 402 Murata Input match L2 47 nH 402 Murata Output match, DC feed R1 24 Ω 402 Murata Lower gain, improve IP3, P1dB C1 47 pF 402 Murata DC Block, Input match C2 100 pF 402 Murata RF bypass C3 0.1 uF 402 Murata Low freq bypass to improve IP3 C4 2.4 pF 402 Murata DC block, Output match L1 39 nH 402 Murata Input match L2 33 nH 402 Murata DC Feed through, Output match R1 24 Ω 402 KOA Lower gain, improve IP3, P1dB MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 35 Printed Circuit Board and Bill of Materials Table 14. Bill of Materials for the Application Circuit Boards (continued) 900 MHz Application Circuit (Figure 24) 1900 MHz Application Circuit (Figure 24) Component Value Case Manufacturer Comments C1 47 pF 402 Murata Input match, DC block C2 47 pF 402 Murata 900 MHz bypass C3 0.1 uF 402 Murata RF bypass C4 2 pF 402 Murata Output match, DC block C5 3 pF 402 Murata Output match L1 6.8 nH 402 Murata Input match L2 10 nH 402 Murata Output match, DC feed C1 3.3 pF 402 Murata Input match, DC block C2 2.7 pF 402 Murata Output match, DC block C3 33 pF 402 Murata 1900 MHz bypass C4 0.1 uF 402 Murata RF bypass L1 3.3 nH 402 Murata Input match L2 10 nH 402 Murata Output match, DC feed L3 5.6 nH 402 Murata Output match MBC13917 Advance Information, Rev. 1.0 36 Freescale Semiconductor Packaging 6 Packaging Figure 26. Outline Dimensions for MLPD-6 MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 37 Product Documentation Figure 27. MLPD-6 Package Details 7 Product Documentation This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com on the documentation page. 8 Revision History Table 15. Revision History Revision 1.0 Change Description Initial Release MBC13917 Advance Information, Rev. 1.0 38 Freescale Semiconductor NOTES MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 39 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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