MMZ09332BT1

Document Number: MMZ09332B Rev. 0, 8/2015 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) MMZ09332BT1 High Efficiency/Linearity Amplifier The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.  Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 140 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) ICC (mA) Test Signal 748 MHz 23 30.9 –49.6 315 W--CDMA 942 MHz 22 27.1 –50.4 240 W--CDMA 130–1000 MHz, 30 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER QFN 3  3  Typical PA Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 110 mA Pout (dBm) Gps (dB) PAE (%) 450 MHz 32.3 30.3 @ 3.6 V 37.2 26.3 @ 3.6 V 45.5 @ 5 V 53.7 @ 3.6 V CW 760 MHz 32.2 30.8 40.0 @ 5 V CW Frequency Test Signal Features  Frequency: 130–1000 MHz  P1dB: 33 dBm, 450 to 1000 MHz  OIP3: up to 48 dBm @ 900 MHz  Excellent Linearity  Active Bias Control (adjustable externally)  Single 3 to 5 V Supply  Single--ended Power Detector  Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package Power VBA1 VBA2 VBIAS Down VCC1 ACTIVE BIAS WITH POWER DOWN RFin INTERSTAGE MATCH INPUT PREMATCH OUTPUT PREMATCH VCC2/ RFout OUTPUT POWER DETECTOR PDET Figure 1. Functional Block Diagram  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMZ09332BT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage VCC 6 V Total Supply Current ICC 1200 mA RF Input Power Pin 29 dBm Storage Temperature Range Tstg –65 to +150 C Junction Temperature TJ 175 C Symbol Value (1) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 93C, VCC1 = VCC2 = VBIAS = 5 Vdc RJC Stage 1 Stage 2 C/W 51 26 Table 3. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 760 MHz, TA = 25C, 50 ohm system, in Freescale PA Driver Application Circuit) Symbol Min Typ Max Unit Gp 28.7 30.5 — dB Input Return Loss (S11) IRL — –12 — dB Output Return Loss (S22) ORL — –12 — dB Power Output @ 1dB Compression P1dB — 32.8 — dBm Intercept Point, Two--Tone CW OIP3 — 43 — dBm Characteristic Small--Signal Gain (S21) Power Down Voltage Bias “On” Bias “Off” 0 1.4 — — 1.0 2.0 V Power Down Current Bias “On” Bias “Off” 0 0.018 — — 0 1.38 mA Supply Current ICQ 88 108 128 mA Supply Voltage VCC — 5 — V Table 4. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 5. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 1 260 C Per JESD22--A113, IPC/JEDEC J--STD--020 Table 6. Ordering Information Device MMZ09332BT1 Tape and Reel Information Package T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel QFN 3  3 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Power VBA2 VCC1 Down 12 11 10 VBA1 1 9 VCC2/RFout VBIAS 2 8 VCC2/RFout RFin 3 7 VCC2/RFout 4 5 6 N.C. N.C. PDET Figure 2. Pin Connections MMZ09332BT1 2 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 925–960 MHz, 5 VOLT OPERATION VBIAS C10 VCC1 C9 C14 PDC L2 C12 C11 C7 R2 L3 12 11 C8 R1 VCC2 10 1 C15 9 RF OUTPUT BIAS CIRCUIT C3 2 RF INPUT C1 L4 8 C4 C6 C5 7 3 L1 C16 C2 4 5 6 PDET C13 Figure 3. MMZ09332BT1 Test Circuit Schematic Table 7. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 6.8 pF Chip Capacitor GJM1555C1H6R8DB01ND Murata C2 2.4 pF Chip Capacitor GJM1555C1H2R4DB01ND Murata C3 220 pF Chip Capacitor GRM1555C1H221GA01ND Murata C4 4.7 pF Chip Capacitor GJM1555C1H4R7DB01ND Murata C5 8.2 pF Chip Capacitor GJM1555C1H8R2DB01ND Murata C6, C7, C13 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C8 2.2 pF Chip Capacitor GJM1555C1H2R2DB01ND Murata C9, C11, C15 1000 pF Chip Capacitors GRM1555C1H102JA01ND Murata C10, C14 1 F Chip Capacitors GRM188R61A105KE15ND Murata C12 3.9 pF Chip Capacitor GJM1555C1H3R9DB01ND Murata C16 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata L1 3.3 nH Chip Inductor 0402CS--3N3XJLU Coilcraft L2, L3 22 nH Chip Inductors LL1608--FH22NK Toko L4 1.8 nH Chip Inductor 0402CS--1N8XJLW Coilcraft R1 1.1 K, 1/16 W Chip Resistor RC0402JR--071K1P Yageo R2 2.0 K, 1/16 W Chip Resistor RC0402JR--072KP Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 3 C10 VCC2 PDC VCC1 VBIAS(1) 50 OHM APPLICATION CIRCUIT: 925–960 MHz, 5 VOLT OPERATION C14 C16 C11 C9 C15 L3 L2 R2 RFIN C8 C12 R1 RFOUT C7 C6 C1 L1 C2 C3 C13 C4 L4 QFN 33--12S Rev. 2B C5 PDET M70506 PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 4. MMZ09332BT1 Test Circuit Component Layout Table 7. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 6.8 pF Chip Capacitor GJM1555C1H6R8DB01ND Murata C2 2.4 pF Chip Capacitor GJM1555C1H2R4DB01ND Murata C3 220 pF Chip Capacitor GRM1555C1H221GA01ND Murata C4 4.7 pF Chip Capacitor GJM1555C1H4R7DB01ND Murata C5 8.2 pF Chip Capacitor GJM1555C1H8R2DB01ND Murata C6, C7, C13 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C8 2.2 pF Chip Capacitor GJM1555C1H2R2DB01ND Murata C9, C11, C15 1000 pF Chip Capacitors GRM1555C1H102JA01ND Murata C10, C14 1 F Chip Capacitors GRM188R61A105KE15ND Murata C12 3.9 pF Chip Capacitor GJM1555C1H3R9DB01ND Murata C16 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata L1 3.3 nH Chip Inductor 0402CS--3N3XJLU Coilcraft L2, L3 22 nH Chip Inductors LL1608--FH22NK Toko L4 1.8 nH Chip Inductor 0402CS--1N8XJLW Coilcraft R1 1.1 K, 1/16 W Chip Resistor RC0402JR--071K1P Yageo R2 2.0 K, 1/16 W Chip Resistor RC0402JR--072KP Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ09332BT1 4 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 925–960 MHz, 5 VOLT OPERATION 0 32 30 –5 28 26 S21 (dB) S11 (dB) –10 –15 –20 24 22 20 –25 –30 700 750 800 850 900 950 1000 1050 VCC1 = VCC2 = VBIAS = 5 Vdc 18 VCC1 = VCC2 = VBIAS = 5 Vdc 16 700 1100 750 800 850 900 950 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency Figure 6. S21 versus Frequency 1050 1100 0 –5 S22 (dB) –10 –15 –20 –25 –30 –35 700 VCC1 = VCC2 = VBIAS = 5 Vdc 750 800 850 900 950 1000 1050 1100 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 5 50 OHM APPLICATION CIRCUIT: 925–960 MHz, 5 VOLT OPERATION –33 300 –36 –39 ACPR (dBc) –42 ICC, COLLECTOR CURRENT (mA) VCC1 = VCC2 = VBIAS = 5 Vdc, f = 942 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped Test Signal 3.84 MHz Channel Bandwidth 5.0 MHz Channel Offset –45 –48 –51 –54 –57 –60 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 942 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped Test Signal 3.84 MHz Channel Bandwidth 5.0 MHz Channel Offset 250 200 150 ICC2 100 ICC1 50 –63 –66 10 12 14 16 18 20 22 24 0 26 10 14 12 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 8. ACPR versus Output Power Figure 9. Stage Collector Current versus Output Power 26 30 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 942 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped Test Signal 3.84 MHz Channel Bandwidth 5.0 MHz Channel Offset Gps, POWER GAIN (dB) 29 28 27 26 25 24 23 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Figure 10. Power Gain versus Output Power MMZ09332BT1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 728–768 MHz, 5 VOLT OPERATION VBIAS VCC1 C9 PDC L2 C12 C11 C7 R2 L3 12 11 C8 R1 VCC2 10 1 9 RF OUTPUT BIAS CIRCUIT C3 2 RF INPUT C1 R3 8 C4 C6 C5 7 3 L1 C14 C10 C2 4 5 6 PDET C13 Figure 11. MMZ09332BT1 Test Circuit Schematic Table 8. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C12 7.5 pF Chip Capacitors 04023J7R5BBS AVX C2 2.4 pF Chip Capacitor 04023J2R4BBS AVX C3 220 pF Chip Capacitor GRM1555C1H221JA01ND Murata C4 4.7 pF Chip Capacitor 04023J4R7BBS AVX C5 12 pF Chip Capacitor 04025A120JAT2A AVX C6, C7, C13 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C8 6.8 pF Chip Capacitor 06033J6R8BBS Murata C9, C11 1 F Chip Capacitors GRM155R61A105KE15ND Murata C10 1000 pF Chip Capacitor GRM155R71H102KA01ND Murata C14 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata L1 5.6 nH Chip Inductor LL1005--FHL5N6S Toko L2 22 nH Chip Inductor LL1608--FH22N0K Toko L3 18 nH Chip Inductor 0603HC--18NXJLW Coilcraft R1 1.1 K Chip Resistor RC0402JR--071K1P Yageo R2 2.0 K Chip Resistor RC0402JR--072KP Yageo R3 0  Chip Resistor RC0402JR--070RP Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 7 VCC2 PDC VCC1 VBIAS(1) 50 OHM APPLICATION CIRCUIT: 728–768 MHz, 5 VOLT OPERATION C11 C14 C10 C9 L2 L3 R2 RFIN C12 R1 RFOUT C7 C8 C6 C1 L1 C2 C3 C13 C4 C5 R3 QFN 33--12S Rev. 2B PDET M70506 PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 12. MMZ09332BT1 Test Circuit Component Layout Table 8. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C12 7.5 pF Chip Capacitors 04023J7R5BBS AVX C2 2.4 pF Chip Capacitor 04023J2R4BBS AVX C3 220 pF Chip Capacitor GRM1555C1H221JA01ND Murata C4 4.7 pF Chip Capacitor 04023J4R7BBS AVX C5 12 pF Chip Capacitor 04025A120JAT2A AVX C6, C7, C13 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C8 6.8 pF Chip Capacitor 06033J6R8BBS Murata C9, C11 1 F Chip Capacitors GRM155R61A105KE15ND Murata C10 1000 pF Chip Capacitor GRM155R71H102KA01ND Murata C14 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata L1 5.6 nH Chip Inductor LL1005--FHL5N6S Toko L2 22 nH Chip Inductor LL1608--FH22N0K Toko L3 18 nH Chip Inductor 0603HC--18NXJLW Coilcraft R1 1.1 K Chip Resistor RC0402JR--071K1P Yageo R2 2.0 K Chip Resistor RC0402JR--072KP Yageo R3 0  Chip Resistor RC0402JR--070RP Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 (Test Circuit Component Designations and Values table repeated for reference.) MTL MMZ09332BT1 8 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 728–768 MHz, 5 VOLT OPERATION 0 34 –5 32 –10 30 S21 (dB) S11 (dB) –15 –20 –25 26 24 –30 22 –35 –40 600 28 VCC1 = VCC2 = VBIAS = 5 Vdc 650 700 750 800 850 20 600 900 VCC1 = VCC2 = VBIAS = 5 Vdc 650 700 750 800 850 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 13. S11 versus Frequency Figure 14. S21 versus Frequency 900 –3 –6 S22 (dB) –9 –12 –15 –18 –21 600 VCC1 = VCC2 = VBIAS = 5 Vdc 650 700 750 800 850 900 f, FREQUENCY (MHz) Figure 15. S22 versus Frequency MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 9 50 OHM APPLICATION CIRCUIT: 728–768 MHz, 5 VOLT OPERATION –39 400 ACPR (dBc) –42 ICC, COLLECTOR CURRENT (mA) VCC1 = VCC2 = VBIAS = 5 Vdc, f = 748 MHz 10 MHz LTE 3GPP TM1.1 Unclipped Test Signal 9.015 MHz Channel Bandwidth 10.0 MHz Channel Offset –45 –48 –51 –54 10 12 14 16 18 20 22 24 300 250 ICC2 200 150 ICC1 100 50 0 26 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 748 MHz 10 MHz LTE 3GPP TM1.1 Unclipped Test Signal 9.015 MHz Channel Bandwidth 10.0 MHz Channel Offset 350 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 16. ACPR versus Output Power Figure 17. Stage Collector Current versus Output Power 26 33 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 748 MHz 10 MHz LTE 3GPP TM1.1 Unclipped Test Signal 9.015 MHz Channel Bandwidth 10.0 MHz Channel Offset Gps, POWER GAIN (dB) 32 31 30 29 28 27 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Figure 18. Power Gain versus Output Power MMZ09332BT1 10 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 760–870 MHz, 5 VOLT OPERATION VBIAS VCC1 C9 PDC L2 C12 C11 C7 R2 L3 12 11 VCC2 10 1 9 RF OUTPUT BIAS CIRCUIT C2 2 RF INPUT L4 8 C3 C6 C4 7 3 L1 C1 C10 C8 R1 L5 4 5 6 PDET C5 Figure 19. MMZ09332BT1 Test Circuit Schematic Table 9. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 5.6 pF Chip Capacitor GJM1555C1H5R6JB01ND Murata C2 220 pF Chip Capacitor GRM1555C1H221JA01ND Murata C3 4.7 pF Chip Capacitor GJM1555C1H4R7DB01ND Murata C4 10 pF Chip Capacitor GJM1555C1H100JB01ND Murata C5, C6, C7 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C8 1000 pF Chip Capacitor GRM155R71H102KA01ND Murata C9, C11 1 F Chip Capacitors GRM188R61A105KA61ND Murata C10 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata C12 3.3 pF Chip Capacitor GJM1555C1H3R3CB01ND Murata L1 4.7 nH Chip Inductor LL1005--FHL4N7S Toko L2 12 nH Chip Inductor LL1608--FH12N0K Toko L3 22 nH Chip Inductor 0603HC--22NXJLW Coilcraft L4 2.2 nH Chip Inductor LL1608--FH2N2K Toko L5 5.6 nH Chip Inductor LL1005--FHL5N6S Toko R1 1.8 K, 1/16 W Chip Resistor RC0402JR--071K8P Yageo R2 2.0 K, 1/16 W Chip Resistor RC0402JR--072KP Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 11 VCC2 PDC VCC1 VBIAS(1) 50 OHM APPLICATION CIRCUIT: 760–870 MHz, 5 VOLT OPERATION C11 C10 C8 C9 L2 L3 R2 RFIN RFOUT R1 C7 C12 C6 L5 C1 L1 C5 C2 C3 L4 C4 QFN 33--12S Rev. 2B PDET M70506 PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, BA2 and VBIAS [Device]. Figure 20. MMZ09332BT1 Test Circuit Component Layout Table 9. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 5.6 pF Chip Capacitor GJM1555C1H5R6JB01ND Murata C2 220 pF Chip Capacitor GRM1555C1H221JA01ND Murata C3 4.7 pF Chip Capacitor GJM1555C1H4R7DB01ND Murata C4 10 pF Chip Capacitor GJM1555C1H100JB01ND Murata C5, C6, C7 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C8 1000 pF Chip Capacitor GRM155R71H102KA01ND Murata C9, C11 1 F Chip Capacitors GRM188R61A105KA61ND Murata C10 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata C12 3.3 pF Chip Capacitor GJM1555C1H3R3CB01ND Murata L1 4.7 nH Chip Inductor LL1005--FHL4N7S Toko L2 12 nH Chip Inductor LL1608--FH12N0K Toko L3 22 nH Chip Inductor 0603HC--22NXJLW Coilcraft L4 2.2 nH Chip Inductor LL1608--FH2N2K Toko L5 5.6 nH Chip Inductor LL1005--FHL5N6S Toko R1 1.8 K, 1/16 W Chip Resistor RC0402JR--071K8P Yageo R2 2.0 K, 1/16 W Chip Resistor RC0402JR--072KP Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ09332BT1 12 RF Device Data Freescale Semiconductor, Inc. –2 36 –6 34 –10 32 –14 30 S21 (dB) S11 (dB) 50 OHM APPLICATION CIRCUIT: 760–870 MHz, 5 VOLT OPERATION –40C –18 –22 –26 –30 700 85C 28 24 VCC1 = VCC2 = VBIAS = 5 Vdc 750 25C 26 25C 85C –40C 800 850 900 22 700 950 VCC1 = VCC2 = VBIAS = 5 Vdc 750 800 850 900 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 21. S11 versus Frequency versus Temperature Figure 22. S21 versus Frequency versus Temperature 950 –6 S22 (dB) –8 –10 –12 25C 85C –40C –14 –16 700 VCC1 = VCC2 = VBIAS = 5 Vdc 750 800 850 900 950 f, FREQUENCY (MHz) Figure 23. S22 versus Frequency versus Temperature MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 13 50 OHM APPLICATION CIRCUIT: 760–870 MHz, 5 VOLT OPERATION 38 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 760 MHz 900 800 700 85C 600 500 25C 400 –40C 300 ICC2 200 25C 18 20 22 24 –40C 26 28 30 –40C 34 25C 32 85C 30 28 26 85C ICC1 100 0 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 760 MHz CW Signal 36 Gps, POWER GAIN (dB) ICC, COLLECTOR CURRENT (mA) 1000 24 34 32 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 24. Stage Collector Current versus Output Power versus Temperature Figure 25. Power Gain versus Output Power versus Temperature 34 4 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 760 MHz CW Signal PDET, POWER DETECTOR (V) 3.6 3.2 2.8 2.4 85C 2 25C 1.6 –40C 1.2 0.8 0.4 0 18 20 22 24 26 28 30 32 34 Pout, OUTPUT POWER (dBm) Figure 26. Power Detector versus Output Power versus Temperature MMZ09332BT1 14 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 400–500 MHz, 5 VOLT OPERATION VBIAS VCC1 C3 PDC L2 C5 C4 C7 R2 L3 12 11 VCC2 10 1 9 RF OUTPUT BIAS CIRCUIT C1 2 RF INPUT C10 C9 R1 L5 8 L4 C6 7 3 L1 C2 4 5 6 PDET C8 Figure 27. MMZ09332BT1 Test Circuit Schematic Table 10. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 220 pF Chip Capacitor GRM1555C1H221JA01ND Murata C2 18 pF Chip Capacitor 06033J180GBT2A AVX C3, C4 1 uF Chip Capacitors GRM188R61A105KE15ND Murata C5 2.4 pF Chip Capacitor 04023J2R4BBS AVX C6, C7, C8 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C9 1000 pF Chip Capacitor GRM1555C1H102JA01ND Murata C10 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata L1 3.9 nH Chip Inductor LL1608--FH3N9K Toko L2 5.6 nH Chip Inductor LL1608--FH5N6K Toko L3 12 nH Chip Inductor LL1608--FH12NK Toko L4 22 nH Chip Inductor LL1608--FH22NK Toko L5 5.6 nH Chip Inductor LL1608--FH5N6K Toko R1 1.8 K, 1/16 W Chip Resistor RC0402JR--071K8P Yageo R2 2.0 K, 1/16 W Chip Resistor RC0402JR--072KP Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 15 VCC2 PDC VCC1 VBIAS(1) 50 OHM APPLICATION CIRCUIT: 400–500 MHz, 5 VOLT OPERATION C10 C9 C4 C3 L3 L2 R2 RFIN C5 R1 C7 RFOUT C6 L1 C8 C1 L4 L5 C2 QFN 33--12S Rev. 2B PDET M70506 PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 28. MMZ09332BT1 Test Circuit Component Layout Table 10. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 220 pF Chip Capacitor GRM1555C1H221JA01ND Murata C2 18 pF Chip Capacitor 06033J180GBT2A AVX C3, C4 1 uF Chip Capacitors GRM188R61A105KE15ND Murata C5 2.4 pF Chip Capacitor 04023J2R4BBS AVX C6, C7, C8 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C9 1000 pF Chip Capacitor GRM1555C1H102JA01ND Murata C10 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata L1 3.9 nH Chip Inductor LL1608--FH3N9K Toko L2 5.6 nH Chip Inductor LL1608--FH5N6K Toko L3 12 nH Chip Inductor LL1608--FH12NK Toko L4 22 nH Chip Inductor LL1608--FH22NK Toko L5 5.6 nH Chip Inductor LL1608--FH5N6K Toko R1 1.8 K, 1/16 W Chip Resistor RC0402JR--071K8P Yageo R2 2.0 K, 1/16 W Chip Resistor RC0402JR--072KP Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ09332BT1 16 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 400–500 MHz, 5 VOLT OPERATION 0 40 38 –5 36 34 S21 (dB) S11 (dB) –10 –15 –20 30 28 26 24 –25 350 400 450 500 550 VCC1 = VCC2 = VBIAS = 5 Vdc 22 VCC1 = VCC2 = VBIAS = 5 Vdc –30 300 32 20 300 600 350 400 450 500 550 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 29. S11 versus Frequency Figure 30. S21 versus Frequency 600 0 –5 S22 (dB) –10 –15 –20 –25 –30 –35 300 VCC1 = VCC2 = VBIAS = 5 Vdc 350 400 450 500 550 600 f, FREQUENCY (MHz) Figure 31. S22 versus Frequency MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 17 50 OHM APPLICATION CIRCUIT: 400–500 MHz, 5 VOLT OPERATION 40 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 450 MHz CW Signal 900 800 700 600 500 400 ICC2 300 200 100 0 22 24 26 30 28 38 37 36 35 34 33 ICC1 20 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 450 MHz CW Signal 39 Gps, POWER GAIN (dB) ICC, COLLECTOR CURRENT (mA) 1000 32 34 32 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 32. Stage Collector Current versus Output Power Figure 33. Power Gain versus Output Power 34 4 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 450 MHz CW Signal PDET, POWER DETECTOR (V) 3.6 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 20 22 24 26 28 30 32 34 Pout, OUTPUT POWER (dBm) Figure 34. Power Detector versus Output Power MMZ09332BT1 18 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 136–174 MHz, 5 VOLT OPERATION VBIAS VCC1 C8 PDC L2 C10 C9 C7 R2 L3 12 11 VCC2 10 1 9 RF OUTPUT BIAS CIRCUIT C3 2 RF INPUT L4 8 L5 C6 C4 7 3 L1 C1 C12 C11 R1 C2 4 5 6 PDET C5 Figure 35. MMZ09332BT1 Test Circuit Schematic Table 11. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 15 pF Chip Capacitor GJM1555C1H150JB01ND Murata C2 27 pF Chip Capacitor GJM1555C1H270JB01ND Murata C3 220 pF Chip Capacitor GRM1555C1H221JA01ND Murata C4 33 pF Chip Capacitor GJM1555C1H330JB01ND Murata C5, C6, C7 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C8, C9 1 F Chip Capacitors GRM188R61A105KA61ND Murata C10 3.3 pF Chip Capacitor GJM1555C1H3R3CB01ND Murata C11 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata C12 1000 pF Chip Capacitor GRM155R71H102KA01ND Murata L1 22 nH Chip Inductor LL1005--FH22NK Toko L2, L3 33 nH Chip Inductors LL1608--FH33NK Toko L4 33 nH Chip Inductor LL1608--FSL33NJ Toko L5 33 nH Chip Inductor LL1005--FH33NK Toko R1 2.2 K, 1/16 W Chip Resistor RC0402JR--072K2P Yageo R2 1.8 K, 1/16 W Chip Resistor RC0402JR--071K8P Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 19 VCC2 PDC VCC1 VBIAS(1) 50 OHM APPLICATION CIRCUIT: 136–174 MHz, 5 VOLT OPERATION C11 C12 C9 C8 L2 L3 R2 RFIN C10 R1 RFOUT C7 C6 C1 L1 C2 C5 C3 L5 L4 QFN 33--12S Rev. 2B C4 PDET M70506 PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Figure 36. MMZ09332BT1 Test Circuit Component Layout Table 11. MMZ09332BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 15 pF Chip Capacitor GJM1555C1H150JB01ND Murata C2 27 pF Chip Capacitor GJM1555C1H270JB01ND Murata C3 220 pF Chip Capacitor GRM1555C1H221JA01ND Murata C4 33 pF Chip Capacitor GJM1555C1H330JB01ND Murata C5, C6, C7 100 pF Chip Capacitors GRM1555C1H101JA01ND Murata C8, C9 1 F Chip Capacitors GRM188R61A105KA61ND Murata C10 3.3 pF Chip Capacitor GJM1555C1H3R3CB01ND Murata C11 4.7 F Chip Capacitor GRM188R60J475KE19ND Murata C12 1000 pF Chip Capacitor GRM155R71H102KA01ND Murata L1 22 nH Chip Inductor LL1005--FH22NK Toko L2, L3 33 nH Chip Inductors LL1608--FH33NK Toko L4 33 nH Chip Inductor LL1608--FSL33NJ Toko L5 33 nH Chip Inductor LL1005--FH33NK Toko R1 2.2 K, 1/16 W Chip Resistor RC0402JR--072K2P Yageo R2 1.8 K, 1/16 W Chip Resistor RC0402JR--071K8P Yageo PCB Rogers RO4350B, 0.010, r = 3.66 M70506 MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ09332BT1 20 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 136–174 MHz, 5 VOLT OPERATION 0 34 –5 31 28 S21 (dB) S11 (dB) –10 –15 –20 22 19 –25 16 VCC1 = VCC2 = VBIAS = 5 Vdc –30 25 50 90 130 170 210 250 13 VCC1 = VCC2 = VBIAS = 5 Vdc 50 90 130 170 210 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 37. S11 versus Frequency Figure 38. S21 versus Frequency 250 0 –5 S22 (dB) –10 –15 –20 –25 VCC1 = VCC2 = VBIAS = 5 Vdc –30 50 90 130 170 210 250 f, FREQUENCY (MHz) Figure 39. S22 versus Frequency MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 21 50 OHM APPLICATION CIRCUIT: 136–174 MHz, 5 VOLT OPERATION 34 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 155 MHz CW Signal 600 500 400 ICC2 300 200 100 0 20 22 32 31 30 29 28 27 ICC1 18 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 155 MHz CW Signal 33 Gps, POWER GAIN (dB) ICC, COLLECTOR CURRENT (mA) 700 24 26 28 30 26 18 20 22 24 26 28 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 40. Stage Collector Current versus Output Power Figure 41. Power Gain versus Output Power 30 MMZ09332BT1 22 RF Device Data Freescale Semiconductor, Inc. 3.00 0.70 0.30 2.00 3.40 0.50 1.6  1.6 solder pad with thermal via structure. All dimensions in mm. Figure 42. PCB Pad Layout for QFN 3  3 MA06 WLYW Figure 43. Product Marking MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 23 PACKAGE DIMENSIONS MMZ09332BT1 24 RF Device Data Freescale Semiconductor, Inc. MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 25 MMZ09332BT1 26 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Aug. 2015 Description  Initial Release of Data Sheet MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 27 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does Freescale assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc. Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor Inc. MMZ09332BT1 Document Number: MMZ09332B Rev. 0, 8/2015 28 RF Device Data Freescale Semiconductor, Inc.