MMZ25332BT1

NXP Semiconductors Technical Data Document Number: MMZ25332B Rev. 3, 11/2017 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3  3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.  Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) PAE (%) Test Signal 2140 MHz 22 27.0 –50.0 7.0 W--CDMA 2620 MHz 21 26.0 –50.0 5.0 LTE 20 MHz 1500–2800 MHz, 26.5 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER QFN 3  3--12L Features  Frequency: 1500–2800 MHz  P1dB: 33 dBm @ 2500 MHz  Power gain: 26.5 dB @ 2500 MHz  OIP3: 48 dBm @ 2500 MHz        EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g) Active bias control (adjustable externally) Power down control via VBIAS pin Class 3A HBM ESD rating Single 3 to 5 V supply Single--ended power detector Cost--effective 12--pin, 3 mm QFN surface mount plastic package Table 1. Typical CW Performance (1) Table 2. Maximum Ratings Rating Symbol 1800 MHz 2500 MHz 2800 MHz Unit Small--Signal Gain (S21) Gp 27.6 26.5 25.0 dB Input Return Loss (S11) IRL –26 –17 –16 dB Output Return Loss (S22) ORL –9 –17 –16 dB Power Output @1dB Compression P1dB 32 33 32 dBm Characteristic Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 1200 mA RF Input Power Pin 30 dBm Storage Temperature Range Tstg –65 to +150 C Junction Temperature TJ 175 C 1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system, CW Application Circuit Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 92C, VCC1 = VCC2 = VBIAS = 5 Vdc Symbol Value (2) Unit RJC 16 C/W 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.  2012, 2014, 2017 NXP B.V. RF Device Data NXP Semiconductors MMZ25332BT1 1 Table 4. Electrical Characteristics(1) (VCC1 = VCC2 = VBIAS = 5 Vdc, 2500 MHz, TA = 25C, 50 ohm system, in NXP CW Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 25 26.5 — dB Input Return Loss (S11) IRL — –17 — dB Output Return Loss (S22) ORL — –17 — dB Power Output @ 1dB Compression P1dB — 33 — dBm Third Order Output Intercept Point, Two--Tone CW OIP3 — 48 — dBm Noise Figure NF — 5.8 — dB Supply Current ICQ 356 390 412 mA Supply Voltage VCC — 5 — V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 3A Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 6. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 1 260 C Per JESD22--A113, IPC/JEDEC J--STD--020 Table 7. Ordering Information Device MMZ25332BT1 Tape and Reel Information Package T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel QFN 3  3--12L 1. See Appendix A for test fixture documentation. VCC1 VCC1 PDET VCC1 VCC1 PDET 12 VCC2/RFout VCC2/RFout RFin RFin VCC2/RFout BIAS CIRCUIT VBA1 VBA2 11 10 N.C. 1 9 VCC2/RFout RFin 2 8 VCC2/RFout RFin 3 7 VCC2/RFout 4 5 6 VBA1 VBA2 VBIAS VBIAS Figure 1. Functional Block Diagram Figure 2. Pin Connections MMZ25332BT1 2 RF Device Data NXP Semiconductors 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION VCC1 PDET L1 C1 C3 C4 L2 12 11 10 VCC2 C6 1 9 RF OUTPUT C14 2 RF INPUT 8 Z1 C13 C9 3 7 BIAS CIRCUIT 4 5 R1 6 R2 VBIAS C12 Z1 0.151  0.030 Microstrip Figure 3. MMZ25332BT1 Test Circuit Schematic Table 8. MMZ25332BT1 Test Circuit Component Designations and Values Part Description C1, C12 1 F Chip Capacitors C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 C4 Part Number Manufacturer GRM155R61A105KE15 Murata 470 pF Chip Capacitor GRM1555C1H471JA01 Murata 8.2 pF Chip Capacitor 04023J8R2BBS AVX C6 4.7 F Chip Capacitor GRM188R60J475KE19D Murata C9, C14 22 pF Chip Capacitors 04023J22R0BBS AVX C13 3.3 pF Chip Capacitor 04023J3R3BBS AVX L1 12 nH Chip Inductor 0603HC--12NXJLW Coilcraft L2 6.8 nH Chip Inductor 0603HC--6N8XJLW Coilcraft R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB 0.014, r = 3.7 FR408 Isola Note: Component numbers C2, C5, C7, C8, C10, C11 and C15 are labeled on board but not placed. MMZ25332BT1 RF Device Data NXP Semiconductors 3 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION VCC2 VDECT VCC1 C1 C5* C3 C4 C2* C6 L1 RFIN C9 RFOUT L2 C13 C10* C7* C15* C14 C11* C8* R1 C12 R2 QFN 33--12H Rev. 1 VBIAS(1) PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C2*, C5*, C7*, C8*, C10*, C11* and C15* are labeled on board but not placed. Figure 4. MMZ25332BT1 Test Circuit Component Layout Table 8. MMZ25332BT1 Test Circuit Component Designations and Values Part Description C1, C12 1 F Chip Capacitors C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 C4 Part Number Manufacturer GRM155R61A105KE15 Murata 470 pF Chip Capacitor GRM1555C1H471JA01 Murata 8.2 pF Chip Capacitor 04023J8R2BBS AVX C6 4.7 F Chip Capacitor GRM188R60J475KE19D Murata C9, C14 22 pF Chip Capacitors 04023J22R0BBS AVX C13 3.3 pF Chip Capacitor 04023J3R3BBS AVX L1 12 nH Chip Inductor 0603HC--12NXJLW Coilcraft L2 6.8 nH Chip Inductor 0603HC--6N8XJLW Coilcraft R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB 0.014, r = 3.7 FR408 Isola (Test Circuit Component Designations and Values table repeated for reference.) MMZ25332BT1 4 RF Device Data NXP Semiconductors --0 40 --5 35 --10 30 --40C --15 --20 S21 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS — 2110–2170 MHz, 5 VOLT OPERATION 85C 25C VCC1 = VCC2 = VBIAS = 5 Vdc 2000 1900 2100 2200 5 1800 2300 VCC1 = VCC2 = VBIAS = 5 Vdc 1900 2000 2100 2200 2300 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature --38 0 --5 --40 --40C --10 --42 85C S22 (dB) S12 (dB) 85C 25C 20 10 --30 25C --44 --40C --15 85C --20 --46 --48 1800 25 15 --25 --35 1800 --40C 25C --25 VCC1 = VCC2 = VBIAS = 5 Vdc 1900 2000 2100 2200 2300 --30 1800 VCC1 = VCC2 = VBIAS = 5 Vdc 1900 2000 2100 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 7. S12 versus Frequency versus Temperature Figure 8. S22 versus Frequency versus Temperature 2300 MMZ25332BT1 RF Device Data NXP Semiconductors 5 50 OHM TYPICAL CHARACTERISTICS — 2110–2170 MHz, 5 VOLT OPERATION --38 540 --40C 480 ICC --42 ACPR (dBc) 600 VCC1 = VCC2 = VBIAS = 5 Vdc f = 2140 MHz --34 420 25C 85C --46 --50 --40C 300 85C --54 --58 360 25C 240 180 ACPR --62 120 --66 60 --70 11 13 15 17 21 19 23 25 27 ICC, COLLECTOR CURRENT (mA) --30 0 Pout, OUTPUT POWER (dBm) Figure 9. ACPR and Collector Current versus Output Power versus Temperature — 2140 MHz --34 --38 540 480 ICC --42 ACPR (dBc) 600 VCC1 = VCC2 = VBIAS = 5 Vdc f = 1960 MHz 420 --46 360 --50 300 --54 240 ACPR --58 180 --62 120 --66 60 0 --70 11 13 15 17 19 21 23 25 27 ICC, COLLECTOR CURRENT (mA) --30 Pout, OUTPUT POWER (dBm) Gain 30 --40C 25C Gps, POWER GAIN (dB) 28 21 85C 24 22 20 13 15 17 15 --40C 9 25C PAE 14 18 85C 12 VCC1 = VCC2 = VBIAS = 5 Vdc f = 2140 MHz 16 12 11 27 24 26 18 30 19 21 23 25 6 3 0 27 PAE, POWER ADDED EFFICIENCY (%) 32 P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 9a. ACPR and Collector Current versus Output Power — 1960 MHz 34 33 --40C 32 25C 31 85C 30 29 28 27 1800 VCC1 = VCC2 = VBIAS = 5 Vdc 1900 2000 2100 2200 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 10. Power Gain and Power Added Efficiency versus Output Power versus Temperature Figure 11. P1dB versus Frequency versus Temperature, CW 2300 MMZ25332BT1 6 RF Device Data NXP Semiconductors 50 OHM TYPICAL CHARACTERISTICS — 2110–2170 MHz, 5 VOLT OPERATION 2 VCC1 = VCC2 = VBIAS = 5 Vdc f = 2140 MHz PDET, POWER DETECTOR (V) 1.8 1.6 85C 1.4 1.2 25C 1 --40C 0.8 0.6 0.4 0.2 0 11 13 15 17 19 23 21 25 27 Pout, OUTPUT POWER (dBm) Figure 12. Power Detector versus Output Power versus Temperature --34 --38 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 2140 MHz Bias Config 1 = 400 mA Avg. Bias Config 2 = 300 mA Avg. ACPR (dBc) --42 --54 --58 --34 18 15 12 ACPR 9 Bias Config 1 --62 PAE --66 --70 11 27 21 Bias Config 1 --50 --30 24 Bias Config 2 --46 30 6 3 Bias Config 2 0 13 15 17 19 21 23 25 27 PAE, POWER ADDED EFFICIENCY (%) ACPR (dBc) --30 VCC1 = VCC2 = VBIAS = 5 Vdc f = 2140 MHz Bias Config 2 = 300 mA Avg. --38 --42 --46 Uncorrected --50 --54 --58 DPD Corrected, with Memory Correction --62 --66 --70 17 19 21 23 25 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Note: Bias Config 1: 400 mA Avg. using R2 = 330  Bias Config 2: 300 mA Avg. using R2 = 470  Note: Bias Config 2: 300 mA Avg. using R2 = 470  Figure 13. ACPR and Power Added Efficiency versus Output Power 27 Figure 14. ACPR versus Output Power with Bias Config 2 Uncorrected and Bias Config 2 DPD Corrected MMZ25332BT1 RF Device Data NXP Semiconductors 7 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 3.3 VOLT OPERATION VCC1 PDET L1 C1 C3 C4 L2 12 11 10 VCC2 C6 1 9 RF OUTPUT C14 2 RF INPUT 8 Z1 C13 C9 3 7 BIAS CIRCUIT 4 5 R1 6 R2 VBIAS C12 Z1 0.151  0.030 Microstrip Figure 15. MMZ25332BT1 Test Circuit Schematic Table 9. MMZ25332BT1 Test Circuit Component Designations and Values Part Description C1, C12 1 F Chip Capacitors C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 C4 Part Number Manufacturer GRM155R61A105KE15 Murata 470 pF Chip Capacitor GRM1555C1H471JA01 Murata 8.2 pF Chip Capacitor 04023J8R2BBS AVX C6 4.7 F Chip Capacitor GRM188R60J475KE19D Murata C9, C14 22 pF Chip Capacitors 04023J22R0BBS AVX C13 3.3 pF Chip Capacitor 04023J3R3BBS AVX L1 12 nH Chip Inductor 0603HC--12NXJLW Coilcraft L2 6.8 nH Chip Inductor 0603HC--6N8XJLW Coilcraft R1 500 , 1/16 W Chip Resistor RC0402JR--07500L Yageo R2 90 , 1/16 W Chip Resistor RC0402JR--0790L Yageo PCB 0.014, r = 3.7 FR408 Isola Note: Component numbers C2, C5, C7, C8, C10, C11 and C15 are labeled on board but not placed. MMZ25332BT1 8 RF Device Data NXP Semiconductors 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 3.3 VOLT OPERATION VCC2 VDECT VCC1 C1 C5* C3 C4 C2* C6 L1 RFIN C9 RFOUT L2 C13 C10* C7* R1 C15* C14 C11* C8* C12 R2 QFN 33--12H Rev. 1 VBIAS(1) PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C2*, C5*, C7*, C8*, C10*, C11* and C15* are labeled on board but not placed. Figure 16. MMZ25332BT1 Test Circuit Component Layout Table 9. MMZ25332BT1 Test Circuit Component Designations and Values Part Description C1, C12 1 F Chip Capacitors C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 C4 Part Number Manufacturer GRM155R61A105KE15 Murata 470 pF Chip Capacitor GRM1555C1H471JA01 Murata 8.2 pF Chip Capacitor 04023J8R2BBS AVX C6 4.7 F Chip Capacitor GRM188R60J475KE19D Murata C9, C14 22 pF Chip Capacitors 04023J22R0BBS AVX C13 3.3 pF Chip Capacitor 04023J3R3BBS AVX L1 12 nH Chip Inductor 0603HC--12NXJLW Coilcraft L2 6.8 nH Chip Inductor 0603HC--6N8XJLW Coilcraft R1 500 , 1/16 W Chip Resistor RC0402JR--07500L Yageo R2 90 , 1/16 W Chip Resistor RC0402JR--0790L Yageo PCB 0.014, r = 3.7 FR408 Isola (Test Circuit Component Designations and Values table repeated for reference.) MMZ25332BT1 RF Device Data NXP Semiconductors 9 0 40 --5 35 --10 30 --15 25 S21 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS — 2110–2170 MHz, 3.3 VOLT OPERATION --20 15 --25 10 --30 --35 1800 VCC1 = VCC2 = VBIAS = 3.3 Vdc 1900 2000 2100 2200 5 1800 2300 VCC1 = VCC2 = VBIAS = 3.3 Vdc 1900 2000 2100 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 17. S11 versus Frequency Figure 18. S21 versus Frequency --38 0 --40 --5 2300 --10 S22 (dB) --42 S12 (dB) 20 --44 --15 --20 --46 --48 1800 --25 VCC1 = VCC2 = VBIAS = 3.3 Vdc 1900 2000 2100 2200 2300 --30 1800 VCC1 = VCC2 = VBIAS = 3.3 Vdc 1900 2000 2100 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 19. S12 versus Frequency Figure 20. S22 versus Frequency 2300 MMZ25332BT1 10 RF Device Data NXP Semiconductors 50 OHM TYPICAL CHARACTERISTICS — 2110–2170 MHz, 3.3 VOLT OPERATION ACPR (dBc) 600 VCC1 = VCC2 = VBIAS = 3.3 Vdc f = 2140 MHz --25 --30 540 480 --35 420 360 --40 ICC --45 --50 300 240 ACPR --55 180 --60 120 --65 60 --70 11 13 15 17 19 21 23 25 27 ICC, COLLECTOR CURRENT (mA) --20 0 Pout, OUTPUT POWER (dBm) Figure 21. ACPR and Collector Current versus Output Power 24 22 42 Gain 36 VCC1 = VCC2 = VBIAS = 3.3 Vdc f = 2140 MHz 30 20 24 18 18 16 12 PAE 6 14 12 11 13 15 17 19 23 21 25 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 26 P1dB, 1 dB COMPRESSION POINT, CW (dBm) 48 28 0 27 29 28 27 26 25 24 23 VCC1 = VCC2 = VBIAS = 3.3 Vdc 22 1800 1900 2000 2100 2200 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 22. Power Gain and Power Added Efficiency versus Output Power Figure 23. P1dB versus Frequency, CW 2 VCC1 = VCC2 = VBIAS = 3.3 Vdc f = 2140 MHz 1.8 PDET, POWER DETECTOR (V) 2300 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 11 13 15 17 19 21 23 25 27 Pout, OUTPUT POWER (dBm) Figure 24. Power Detector versus Output Power MMZ25332BT1 RF Device Data NXP Semiconductors 11 3.00 0.70 0.30 2.00 3.40 0.50 Solder pad with thermal via structure. All dimensions in mm. Figure 25. PCB Pad Layout for 12--Lead QFN 3  3 MA05 WLYW Figure 26. Product Marking MMZ25332BT1 12 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS MMZ25332BT1 RF Device Data NXP Semiconductors 13 MMZ25332BT1 14 RF Device Data NXP Semiconductors MMZ25332BT1 RF Device Data NXP Semiconductors 15 APPENDIX A MMZ25332BT1 TEST CIRCUIT SCHEMATIC, FIXTURE AND PARTS LIST VCC1 PDET L1 C1 C3 C4 L2 12 11 10 VCC2 C6 1 9 RF OUTPUT C14 2 RF INPUT Z1 8 C13 C15 C9 3 7 BIAS CIRCUIT 4 5 R1 C7 6 R2 VBIAS C12 Z1 0.155  0.030 Microstrip Figure A--1. MMZ25332BT1 Test Circuit Schematic — 2500 MHz, 5 Volt Operation Table A--1. MMZ25332BT1 Test Circuit Component Designations and Values — 2500 MHz, 5 Volt Operation Part Description C1, C12 1 F Chip Capacitors C2, C5, C8, C10, C11 Components Not Placed C3 C4 Part Number Manufacturer GRM155R61A105KE15 Murata 470 pF Chip Capacitor GRM1555C1H471JA01D Murata 7.5 pF Chip Capacitor 04023J7R5BBS AVX C6 4.7 F Chip Capacitor GRM188R60J475KE19D Murata C7 120 pF Chip Capacitor GRM1555C1H121JA01D Murata C9, C14 22 pF Chip Capacitors 04023J22R0BBS AVX C13 2.4 pF Chip Capacitor 04023J2R4BBS AVX C15 1.8 pF Chip Capacitor 04023J1R8BBS AVX L1 24 nH Chip Inductor 0603HC--24NXJLW Coilcraft L2 22 nH Chip Inductor 0603HC--22NXJLW Coilcraft R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB 0.014, r = 3.7 FR408 Isola Note: Component numbers C2, C5, C8, C10 and C11 are labeled on board but not placed. MMZ25332BT1 16 RF Device Data NXP Semiconductors Appendix A (continued) VCC2 VDECT VCC1 C1 C5* C3 C4 C2* C6 L1 RFIN C9 RFOUT L2 C13 C10* C7 R1 C15 C14 C11* C8* C12 R2 QFN 33--12H Rev. 1 VBIAS(1) PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C2*, C5*, C8*, C10* and C11* are labeled on board but not placed. Figure A--2. MMZ25332BT1 Test Circuit Component Layout — 2500 MHz, 5 Volt Operation Table A--1. MMZ25332BT1 Test Circuit Component Designations and Values — 2500 MHz, 5 Volt Operation Part Description C1, C12 1 F Chip Capacitors C2, C5, C8, C10, C11 Components Not Placed C3 C4 Part Number Manufacturer GRM155R61A105KE15 Murata 470 pF Chip Capacitor GRM1555C1H471JA01D Murata 7.5 pF Chip Capacitor 04023J7R5BBS AVX C6 4.7 F Chip Capacitor GRM188R60J475KE19D Murata C7 120 pF Chip Capacitor GRM1555C1H121JA01D Murata C9, C14 22 pF Chip Capacitors 04023J22R0BBS AVX C13 2.4 pF Chip Capacitor 04023J2R4BBS AVX C15 1.8 pF Chip Capacitor 04023J1R8BBS AVX L1 24 nH Chip Inductor 0603HC--24NXJLW Coilcraft L2 22 nH Chip Inductor 0603HC--22NXJLW Coilcraft R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L Yageo R2 330 , 1/16 W Chip Resistor RC0402JR--07330L Yageo PCB 0.014, r = 3.7 FR408 Isola (Test Circuit Component Designations and Values table repeated for reference.) MMZ25332BT1 RF Device Data NXP Semiconductors 17 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software  .s2p File Development Tools  Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.nxp.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local NXP Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2012  Initial release of data sheet 1 Dec. 2012  Added 2140 MHz, 5 Volt Operation, as follows: -- Fig. 3, Test Circuit Schematic, p. 3 -- Table 7, Test Circuit Component Designations and Values, p. 3 -- Fig. 4, Test Circuit Component Layout, p. 4 -- Fig. 5, S11 versus Frequency versus Temperature, p. 5 -- Fig. 6, S21 versus Frequency versus Temperature, p. 5 -- Fig. 7, S12 versus Frequency versus Temperature, p. 5 -- Fig. 8, S22 versus Frequency versus Temperature, p. 5 -- Fig. 9. ACPR and Collector Current versus Output Power versus Temperature — 2140 MHz, p.6 -- Fig. 9a. ACPR and Collector Current versus Output Power — 1960 MHz, p.6 -- Fig. 10. Power Gain and Power Added Efficiency versus Output Power versus Temperature, p. 6 -- Fig. 11. P1dB versus Frequency versus Temperature, CW, p. 6 -- Fig. 12. Power Detector versus Output Power versus Temperature, p. 7 -- Fig. 13. ACPR and Power Added Efficiency versus Output Power, p. 7 -- Fig. 14. ACPR versus Output Power with Bias Config 2 Uncorrected and Bias Config 2 DPD Corrected, p. 7  Added 2140 MHz, 3.3 Volt Operation, as follows: -- Fig. 15, Test Circuit Schematic, p. 8 -- Table 8, Test Circuit Component Designations and Values, p. 8 -- Fig. 16, Test Circuit Component Layout, p. 9 -- Fig. 17, S11 versus Frequency versus Temperature, p. 10 -- Fig. 18, S21 versus Frequency versus Temperature, p. 10 -- Fig. 19, S12 versus Frequency versus Temperature, p. 10 -- Fig. 20, S22 versus Frequency versus Temperature, p. 10 -- Fig. 21, ACPR and Collector Current versus Output Power, p .11 -- Fig. 22, Power Gain and Power Added Efficiency versus Output Power, p. 11 -- Fig. 23, P1dB versus Frequency, CW, p. 11 -- Fig. 24, Power Detector versus Output Power, p. 11  Added Appendix A, Test Circuit Schematic, Fixture and Parts List (for 2500 MHz, 5 Volt Operation) as follows: -- Moved former Fig. 3 (now Fig. 27), Test Circuit Schematic, to p. 16 -- Moved former Table 7 (now Table 9), Test Circuit Component Designations and Values, to p.16 -- Moved former Fig. 4 (now Fig. 28), Test Circuit Component Layout, to p.17 (continued) MMZ25332BT1 18 RF Device Data NXP Semiconductors REVISION HISTORY (cont.) Revision Date 2 May 2014 Description  Updated frequency from 1800--2800 MHz to 1500--2800 MHz and Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1  Added Failure Analysis information, p. 18 3 Nov. 2017  Fig. 26, updated date code line to reflect improved traceability information, p. 12 MMZ25332BT1 RF Device Data NXP Semiconductors 19 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. E 2012, 2014, 2017 NXP B.V. MMZ25332BT1 Document Number: MMZ25332B Rev. 3, 11/2017 20 RF Device Data NXP Semiconductors