Freescale Semiconductor
Technical Data
Document Number: MRF1517N
Rev. 7, 6/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF1517NT1
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large- signal, common source amplifier applications in 7.5 volt
portable FM equipment.
D
• Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 14 dB
Efficiency — 70%
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Features
• Characterized with Series Equivalent Large - Signal
G
Impedance Parameters
• Excellent Thermal Stability
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
S
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
520 MHz, 8 W, 7.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
VDSS
- 0.5, +25
Vdc
VGS
± 20
Vdc
ID
4
Adc
PD
62.5
0.50
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Value (3)
Unit
RθJC
2
°C/W
Drain - Source Voltage
(1)
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
(2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. Not designed for 12.5 volt applications.
T
T
2. Calculated based on the formula PD = J – C
RθJC
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1517NT1
1
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 120 μAdc)
VGS(th)
1
1.7
2.1
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.5
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
0.9
—
S
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
66
—
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
38
—
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
6
—
pF
Common - Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps
—
14
—
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η
—
70
—
%
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
MRF1517NT1
2
RF Device Data
Freescale Semiconductor
B2
VGG
C9
+
C7
C8
R3
B1
C18
R2
C17
C16
+
C15
VDD
L1
C6
R1
Z7
Z6
Z9
Z1
Z2
Z3
Z4
C14
Z5
C10
B1, B2
C3
C4
RF
OUTPUT
C13
C5
Short Ferrite Beads, Fair Rite Products
(2743021446)
300 pF, 100 mil Chip Capacitor
C1
C2, C3, C4, C10,
C12, C13
C5, C11
C6, C18
C7, C15
C8, C16
C9, C17
C14
L1
N1, N2
C12
C11
C1
C2
N2
Z10
DUT
N1
RF
INPUT
Z8
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
0 to 20 pF, Trimmer Capacitors
43 pF, 100 mil Chip Capacitors
120 pF, 100 mil Chip Capacitors
10 μF, 50 V Electrolytic Capacitors
0.1 μF, 100 mil Chip Capacitors
1,000 pF, 100 mil Chip Capacitors
330 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15 Ω, 0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.315″ x 0.080″ Microstrip
1.415″ x 0.080″ Microstrip
0.322″ x 0.080″ Microstrip
0.022″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.050″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
0.800″ x 0.080″ Microstrip
0.589″ x 0.080″ Microstrip
Glass Teflon®, 31 mils, 2 oz. Copper
Figure 1. 480 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 480 - 520 MHz
0
500 MHz
520 MHz
480 MHz
8
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
10
6
4
2
−5
−10
480 MHz
520 MHz
−15
500 MHz
−20
VDD = 7.5 Vdc
VDD = 7.5 Vdc
0
−25
0
0.2
0.4
0.6
Pin, INPUT POWER (WATTS)
0.8
Figure 2. Output Power versus Input Power
1.0
1
2
3
4
5
6
7
8
Pout, OUTPUT POWER (WATTS)
9
10
Figure 3. Input Return Loss versus
Output Power
MRF1517NT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 480 - 520 MHz
18
80
500 MHz
480 MHz
70
Eff, DRAIN EFFICIENCY (%)
16
520 MHz
GAIN (dB)
14
12
10
8
480 MHz
60
50
500 MHz
520 MHz
40
30
20
VDD = 7.5 Vdc
VDD = 7.5 Vdc
10
6
1
2
3
4
5
6
7
8
Pout, OUTPUT POWER (WATTS)
9
10
Figure 4. Gain versus Output Power
5
6
7
8
4
Pout, OUTPUT POWER (WATTS)
9
10
11
80
10
500 MHz
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
3
Figure 5. Drain Efficiency versus Output Power
12
8
520 MHz
480 MHz
6
4
Pin = 27 dBm
VDD = 7.5 Vdc
2
0
480 MHz
70
500 MHz
60
520 MHz
50
Pin = 27 dBm
VDD = 7.5 Vdc
40
30
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
0
Figure 6. Output Power versus Biasing Current
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
Figure 7. Drain Efficiency versus Biasing Current
12
80
10
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
2
1
500 MHz
8
520 MHz
6
480 MHz
4
Pin = 27 dBm
IDQ = 150 mA
2
480 MHz
70
500 MHz
60
520 MHz
50
Pin = 27 dBm
IDQ = 150 mA
40
30
0
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1517NT1
4
RF Device Data
Freescale Semiconductor
B2
VGG
C8
C7
+
C6
B1
R3
VDD
+
C17
R2
C16
C15
C14
L1
C5
R1
Z5
Z6
Z7
Z8
DUT
N1
Z1
RF
INPUT
Z2
Z3
Z4
C10
B1, B2
C1, C13
C2, C3, C4, C10,
C11, C12
C5, C17
C6, C14
C7, C15
C8, C16
C9
L1
N1, N2
C3
RF
OUTPUT
C13
C1
C2
N2
Z9
C9
C11
C12
C4
Short Ferrite Beads, Fair Rite Products
(2743021446)
300 pF, 100 mil Chip Capacitors
R1
R2
R3
Z1
Z2
Z3
Z4, Z5
Z6
Z7
Z8
Z9
Board
0 to 20 pF, Trimmer Capacitors
130 pF, 100 mil Chip Capacitors
10 μF, 50 V Electrolytic Capacitors
0.1 μF, 100 mil Chip Capacitors
1,000 pF, 100 mil Chip Capacitors
33 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
12 Ω, 0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.617″ x 0.080″ Microstrip
0.723″ x 0.080″ Microstrip
0.513″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.048″ x 0.080″ Microstrip
0.577″ x 0.080″ Microstrip
1.135″ x 0.080″ Microstrip
0.076″ x 0.080″ Microstrip
Glass Teflon®, 31 mils, 2 oz. Copper
Figure 10. 400 - 440 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 - 440 MHz
10
0
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
9
400 MHz
8
420 MHz
7
6
440 MHz
5
4
3
2
1
−5
400 MHz
−10
420 MHz
−15
440 MHz
−20
VDD = 7.5 Vdc
VDD = 7.5 Vdc
0
−25
0
0.1
0.2
0.3
Pin, INPUT POWER (WATTS)
0.4
0.5
Figure 11. Output Power versus Input Power
1
2
3
4
5
6
7
Pout, OUTPUT POWER (WATTS)
8
9
10
Figure 12. Input Return Loss versus Output Power
MRF1517NT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS, 400 - 440 MHz
17
70
420 MHz
400 MHz
GAIN (dB)
13
440 MHz
60
Eff, DRAIN EFFICIENCY (%)
15
440 MHz
11
9
7
420 MHz
50
40
400 MHz
30
20
10
VDD = 7.5 Vdc
1
2
3
4
5
6
7
8
Pout, OUTPUT POWER (WATTS)
9
10
1
Figure 13. Gain versus Output Power
3
5
6
7
8
4
Pout, OUTPUT POWER (WATTS)
9
10
11
80
400 MHz
10
420 MHz
440 MHz
8
6
4
Pin = 25.5 dBm
VDD = 7.5 Vdc
2
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
2
Figure 14. Drain Efficiency versus Output Power
12
0
70
440 MHz
60
420 MHz
400 MHz
50
40
Pin = 25.5 dBm
VDD = 7.5 Vdc
30
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
0
Figure 15. Output Power versus Biasing Current
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
Figure 16. Drain Efficiency versus Biasing Current
12
80
420 MHz
10
400 MHz
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
VDD = 7.5 Vdc
0
5
8
440 MHz
6
4
2
Pin = 25.5 dBm
IDQ = 150 mA
70
420 MHz
60
440 MHz
400 MHz
50
40
Pin = 25.5 dBm
IDQ = 150 mA
30
0
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus Supply Voltage
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus Supply Voltage
MRF1517NT1
6
RF Device Data
Freescale Semiconductor
B2
VGG
C8
C7
+
C6
R3
B1
C16
C17
R2
C15
VDD
+
C14
L1
C5
R1
Z5
Z7
Z8
Z1
Z2
Z3
C9
C1
B1, B2
C3
C11
C12
C4
Short Ferrite Beads, Fair Rite Products
(2743021446)
240 pF, 100 mil Chip Capacitor
C1
C2, C3, C4, C10,
C11, C12
C5, C17
C6, C14
C7, C15
C8, C16
C9
C13
L1
N1, N2
RF
OUTPUT
C13
Z4
C10
C2
N2
Z9
DUT
N1
RF
INPUT
Z6
R1
R2
R3
Z1
Z2
Z3
Z4, Z5
Z6
Z7
Z8
Z9
Board
0 to 20 pF, Trimmer Capacitors
130 pF, 100 mil Chip Capacitors
10 mF, 50 V Electrolytic Capacitors
0.1 mF, 100 mil Chip Capacitors
1,000 pF, 100 mil Chip Capacitors
39 pF, 100 mil Chip Capacitor
330 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15 Ω, 0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.471″ x 0.080″ Microstrip
1.082″ x 0.080″ Microstrip
0.372″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.050″ x 0.080″ Microstrip
0.551″ x 0.080″ Microstrip
0.825″ x 0.080″ Microstrip
0.489″ x 0.080″ Microstrip
Glass Teflon®, 31 mils, 2 oz. Copper
Figure 19. 440 - 480 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 440 - 480 MHz
10
0
8
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
9
440 MHz
7
6
5
460 MHz
4
480 MHz
3
2
1
−5
−10
460 MHz
440 MHz
−15
480 MHz
−20
VDD = 7.5 Vdc
VDD = 7.5 Vdc
0
−25
0.0
0.2
0.4
0.6
Pin, INPUT POWER (WATTS)
0.8
Figure 20. Output Power versus Input Power
1
2
3
4
5
6
7
Pout, OUTPUT POWER (WATTS)
8
9
10
Figure 21. Input Return Loss versus Output Power
MRF1517NT1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS, 440 - 480 MHz
17
70
440 MHz
Eff, DRAIN EFFICIENCY (%)
460 MHz
13
GAIN (dB)
460 MHz
60
15
480 MHz
11
9
7
480 MHz
50
440 MHz
40
30
20
10
VDD = 7.5 Vdc
1
2
3
6
7
8
4
5
Pout, OUTPUT POWER (WATTS)
9
10
1
Figure 22. Gain versus Output Power
2
3
5
6
7
8
4
Pout, OUTPUT POWER (WATTS)
10
11
80
Eff, DRAIN EFFICIENCY (%)
440 MHz
10
480 MHz
8
460 MHz
6
4
2
70
480 MHz
60
460 MHz
440 MHz
50
40
Pin = 27.5 dBm
Pin = 27.5 dBm
0
30
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
0
Figure 24. Output Power versus Biasing Current
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
Figure 25. Drain Efficiency versus Biasing Current
12
80
10
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
9
Figure 23. Drain Efficiency versus Output Power
12
Pout , OUTPUT POWER (WATTS)
VDD = 7.5 Vdc
0
5
440 MHz
8
460 MHz
480 MHz
6
4
70
480 MHz
60
460 MHz
440 MHz
50
40
2
Pin = 27.5 dBm
Pin = 27.5 dBm
30
0
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 26. Output Power versus Supply Voltage
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 27. Drain Efficiency versus Supply Voltage
MRF1517NT1
8
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 28. MTTF Factor versus Junction Temperature
MRF1517NT1
RF Device Data
Freescale Semiconductor
9
520
f = 440 MHz
Zin
f = 440 MHz
Zin
480
Zin
400
f = 480 MHz
ZOL*
f = 480 MHz
520
ZOL*
f = 440 MHz
440
ZOL*
f = 480 MHz
400
Zin
Zo = 10 Ω
Zo = 10 Ω
Zo = 10 Ω
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
480
1.06 +j1.82
3.51 +j0.99
440
1.62 +j3.41
3.25 +j0.98
400
1.96 +j3.32
2.52 +j0.39
500
0.97 +j2.01
2.82 +j0.75
460
1.85 +j3.35
3.05 +j0.93
420
2.31 +j3.56
2.61 +j0.64
520
0.975 +j2.37 1.87 +j1.03
480
1.91 +j3.31
2.54 +j0.84
440
1.60 +j3.45
2.37 +j1.04
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
Zin
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
Zin
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
Z
*
OL
Figure 29. Series Equivalent Input and Output Impedance
MRF1517NT1
10
RF Device Data
Freescale Semiconductor
Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc)
IDQ = 150 mA
f
MHz
MH
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.84
- 152
17.66
97
0.016
0
0.77
- 167
100
0.84
- 164
8.86
85
0.016
5
0.78
- 172
200
0.86
- 170
4.17
72
0.015
-5
0.79
- 173
300
0.88
- 171
2.54
62
0.014
-8
0.80
- 172
400
0.90
- 172
1.72
55
0.013
- 25
0.83
- 172
500
0.92
- 172
1.28
50
0.013
- 10
0.84
- 172
600
0.94
- 173
0.98
46
0.014
- 22
0.86
- 171
700
0.95
- 173
0.76
41
0.010
- 30
0.86
- 172
800
0.96
- 174
0.61
38
0.011
- 14
0.86
- 171
900
0.96
- 175
0.50
33
0.011
- 31
0.85
- 172
1000
0.97
- 175
0.40
31
0.006
55
0.88
- 171
IDQ = 800 mA
f
MHz
MH
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.90
- 165
20.42
94
0.018
1
0.76
- 164
100
0.89
- 172
10.20
87
0.015
-7
0.77
- 170
200
0.90
- 175
4.96
79
0.015
- 12
0.77
- 172
300
0.90
- 176
3.17
73
0.017
-2
0.80
- 171
400
0.91
- 176
2.26
67
0.013
1
0.82
- 172
500
0.92
- 176
1.75
63
0.011
-6
0.83
- 171
600
0.93
- 176
1.39
59
0.012
- 31
0.85
- 171
700
0.94
- 176
1.14
55
0.015
- 34
0.88
- 171
800
0.94
- 176
0.93
51
0.008
- 22
0.87
- 171
900
0.95
- 177
0.78
45
0.007
2
0.87
- 172
1000
0.96
- 177
0.65
43
0.008
- 40
0.90
- 170
IDQ = 1.5 A
f
MH
MHz
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.92
- 165
19.90
95
0.017
3
0.76
- 164
100
0.90
- 172
9.93
88
0.018
2
0.77
- 170
200
0.91
- 176
4.84
80
0.016
-4
0.77
- 172
300
0.91
- 176
3.10
74
0.014
- 11
0.80
- 172
400
0.92
- 176
2.22
68
0.014
- 14
0.81
- 172
500
0.93
- 176
1.73
64
0.016
-8
0.83
- 171
600
0.94
- 176
1.39
61
0.013
- 24
0.85
- 171
700
0.94
- 176
1.12
56
0.013
- 24
0.87
- 171
800
0.95
- 176
0.93
52
0.009
- 12
0.87
- 171
900
0.96
- 177
0.78
46
0.008
10
0.87
- 173
1000
0.97
- 177
0.64
44
0.012
4
0.89
- 169
MRF1517NT1
RF Device Data
Freescale Semiconductor
11
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common - source, RF power, N - Channel
enhancement mode, Lateral Metal - Oxide Semiconductor
Field - Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate - to - drain (Cgd), and
gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
Drain
Cgd
Gate
Cds
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
Cgs
Source
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full - on condition. This on - resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The
drain - source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate - to - source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can
result in turn - on of the devices due to voltage build - up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate - to - source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate - drain capacitance. If the
gate - to - source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate - threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1517NT1
12
RF Device Data
Freescale Semiconductor
MOUNTING
The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Method for the PLD - 1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.
Two - port stability analysis with this device’s
S - parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design
Using Two - Port Parameters” for a discussion of two port
network theory and stability.
MRF1517NT1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
R
0.115
2.92
0.115
2.92
L
0.020
0.51
4
0.35 (0.89) X 45_" 5 _
N
K
Q
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
4
ZONE W
2
1
3
G
S
C
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
ZONE X
VIEW Y - Y
mm
SOLDER FOOTPRINT
P
U
H
ZONE V
inches
10_DRAFT
CASE 466 - 03
ISSUE D
PLD- 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRF1517NT1
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN211A: Field Effect Transistors in Theory and Practice
• AN215A: RF Small - Signal Design Using Two - Port Parameters
• AN721: Impedance Matching Networks Applied to RF Power Transistors
• AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
6
June 2008
Description
• Corrected specified performance values for power gain and efficiency on p. 1 to match typical
performance values in the functional test table on p. 2
• Added Product Documentation and Revision History, p. 15
7
June 2009
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
• Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 15
MRF1517NT1
RF Device Data
Freescale Semiconductor
15
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
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MRF1517NT1
Document Number: MRF1517N
Rev. 7, 6/2009
16
RF Device Data
Freescale Semiconductor
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