Document Number: MRF8S9260H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF8S9260HR3
MRF8S9260HSR3
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
18.8
36.0
6.3
--39.5
940 MHz
18.7
37.0
6.2
--38.6
960 MHz
18.6
38.5
5.9
--37.1
920--960 MHz, 75 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
CASE 465B--04
NI--880
MRF8S9260HR3
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465C--03
NI--880S
MRF8S9260HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature
TC
150
C
Operating Junction Temperature (2,3)
TJ
225
C
CW
280
1.5
W
W/C
Symbol
Value (3,4)
Unit
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 75 W CW, 28 Vdc, IDQ = 1800 mA
Case Temperature 80C, 265 W CW, 28 Vdc, IDQ = 1100 mA
RJC
0.37
0.31
C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2009, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 Adc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1700 mAdc, Measured in Functional Test)
VGS(Q)
2.4
3.1
3.9
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 4.4 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
17.5
18.6
20.0
dB
Drain Efficiency
D
36.0
38.5
—
%
PAR
5.5
5.9
—
dB
ACPR
—
--37.1
--35.0
dBc
IRL
—
--14
--9
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dB)
IRL
(dB)
920 MHz
18.8
36.0
6.3
--39.5
--16
940 MHz
18.7
37.0
6.2
--38.6
--18
960 MHz
18.6
38.5
5.9
--37.1
--14
1. Part internally matched both on input and output.
(continued)
MRF8S9260HR3 MRF8S9260HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
260
—
—
10
—
50
—
W
IMD Symmetry @ 130 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
Gain Flatness in 40 MHz Bandwidth @ Pout = 75 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.024
—
dB/C
P1dB
—
0.0075
—
dB/C
Output Power Variation over Temperature
(--30C to +85C) (1)
MHz
MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S9260HR3 MRF8S9260HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C21
R2
C7
C6
C9
C8
C19 C20
C10
C1 C2
C3
C4
CUT OUT AREA
C5 R1
C18
C17
C16*
C11
C12 C13
C14
C15
MRF8S9260H
Rev. 1
*C16 is mounted vertically.
Figure 1. MRF8S9260HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S9260HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6, C9, C12, C16
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C2
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C3
4.7 pF Chip Capacitor
ATC100B4R7BT500XT
ATC
C4, C5
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C7
4.7 F, 50 V Chip Capacitor
C4532X5R1H475MT
TDK
C8, C13, C14, C19, C20
10 F, 50 V Chip Capacitors
C5750X5R1H106MT
TDK
C10, C11
5.6 pF Chip Capacitors
ATC100B5R6BT500XT
ATC
C15, C21
470 F, 63 V Electrolytic Capacitors
477KXM063M
Illinois Capacitor
C17
4.3 pF Chip Capacitor
ATC100B4R3BT500XT
ATC
C18
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
R1
10 , 1/4 W Chip Resistor
CRCW120610R0JKEA
Vishay
R2
0 , 3.5 A Chip Resistor
CRCW12060000Z0EA
Vishay
PCB
0.030, r = 3.5
RF--35
Taconic
MRF8S9260HR3 MRF8S9260HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
38
36
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
D
18.5
34
Gps
18
ACPR
17.5
--33
--9
--35
--11
--37
--39
17
16.5
--41
PARC
IRL
--43
16
900
910
920
930
940
950
960
970
--13
--15
--17
--19
980
0
--0.5
--1
--1.5
PARC (dB)
19
40
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
20
19.5
D, DRAIN
EFFICIENCY (%)
42
VDD = 28 Vdc, Pout = 75 W (Avg.)
IDQ = 1700 mA, Single--Carrier W--CDMA
20.5
ACPR (dBc)
21
--2
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 75 Watts Avg.
--10
VDD = 28 Vdc, Pout = 250 W (PEP), IDQ = 1700 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
IM7--U
--50
IM7--L
--60
1
100
10
TWO--TONE SPACING (MHz)
20
0
19
18
17
16
15
D
--1 dB = 64 W
ACPR
--1
Gps
--2
--2 dB = 88 W
PARC
--4
--5
VDD = 28 Vdc, IDQ = 1700 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
35
60
85
110
135
--20
50
--25
40
30
--3 dB = 122 W
--3
60
20
10
0
160
--30
--35
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
--45
--50
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9260HR3 MRF8S9260HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
Gps
920 MHz
920 MHz
960 MHz
18
16
15
D
50
--25
30
20
960 MHz
940 MHz
ACPR
1
--20
40
VDD = 28 Vdc, IDQ = 1700 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
17
60
920 MHz
10
100
10
0
300
--30
--35
--40
ACPR (dBc)
940 MHz
19
14
960 MHz
940 MHz
D, DRAIN EFFICIENCY (%)
20
--45
--50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
24
Gain
--3
16
--6
12
--9
IRL
8
--12
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1700 mA
4
0
600
700
IRL (dB)
GAIN (dB)
20
--15
800
900
1000
1100
--18
1200
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9260HR3 MRF8S9260HSR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg.
f
MHz
Zsource
Zload
820
2.25 -- j2.59
1.93 -- j1.63
840
2.21 -- j2.51
1.91 -- j1.45
860
2.16 -- j2.46
1.90 -- j1.28
880
2.11 -- j2.40
1.90 -- j1.14
900
1.98 -- j2.37
1.91 -- j1.02
920
1.87 -- j2.29
1.90 -- j0.91
940
1.75 -- j2.23
1.89 -- j0.83
960
1.61 -- j2.14
1.87 -- j0.76
980
1.46 -- j2.03
1.84 -- j0.69
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9260HR3 MRF8S9260HSR3
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1700 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
61
Pout, OUTPUT POWER (dBm)
60
Ideal
59
58
57
920 MHz
56
55
Actual
960 MHz
920 MHz 940 MHz
940 MHz 960 MHz
54
53
52
51
50
33
34
35
36
37
38
39
40
42
41
43
44
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
363
55.6
447
56.5
940
363
55.6
417
56.2
960
363
55.6
437
56.4
Test Impedances per Compression Level
f
(MHz)
Zsource
Zload
920
P1dB
0.94 -- j2.68
2.19 -- j2.10
940
P1dB
1.18 -- j2.65
2.18 -- j2.52
960
P1dB
1.24 -- j3.10
2.72 -- j2.11
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9260HR3 MRF8S9260HSR3
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S9260HR3 MRF8S9260HSR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8S9260HR3 MRF8S9260HSR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8S9260HR3 MRF8S9260HSR3
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2009
Initial Release of Data Sheet
1
Feb. 2012
Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2.
Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 9--10. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 11--12. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
MRF8S9260HR3 MRF8S9260HSR3
RF Device Data
Freescale Semiconductor, Inc.
13
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MRF8S9260HR3 MRF8S9260HSR3
Document Number: MRF8S9260H
Rev. 1, 2/2012
14
RF Device Data
Freescale Semiconductor, Inc.
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