NTS0102
Dual supply translating transceiver; open-drain; auto
direction sensing
Rev. 4.4 — 6 October 2022
1
Product data sheet
General description
The NTS0102 is a 2-bit, dual supply translating transceiver with auto direction sensing,
that enables bidirectional voltage level translation. It features two 2-bit input-output
ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A) and
VCC(B)). VCC(A) can be supplied at any voltage between 1.65 V and 3.6 V and VCC(B)
can be supplied at any voltage between 2.3 V and 5.5 V, making the device suitable for
translating between any of the voltage nodes (1.8 V, 2.5 V, 3.3 V, and 5.0 V). Pins An
and OE are referenced to VCC(A) and pins Bn are referenced to VCC(B). A LOW level at
pin OE causes the outputs to assume a high-impedance OFF-state. This device is fully
specified for partial power-down applications using IOFF. The IOFF circuitry disables the
output, preventing the damaging backflow current through the device when it is powered
down.
2
Features and benefits
• Wide supply voltage range:
– VCC(A): 1.65 V to 3.6 V and VCC(B): 2.3 V to 5.5 V
• Maximum data rates:
– Push-pull: 50 Mbit/s
• IOFF circuitry provides partial Power-down mode operation
• Inputs accept voltages up to 5.5 V
• ESD protection:
– HBM JESD22-A114E Class 2 exceeds 2500 V for A port
– HBM JESD22-A114E Class 3B exceeds 8000 V for B port
– CDM JESD22-C101E exceeds 1500 V
• Latch-up performance exceeds 100 mA per JESD 78B Class II
• Multiple package options
• Specified from –40 °C to +85 °C and -40 °C to +125 °C
3
Applications
2
• I C/SMBus
• UART
• GPIO
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
4
Ordering information
Table 1. Ordering information
Type number
Topside
marking
Package
Name
Description
Version
NTS0102DP
s02
TSSOP8
plastic thin shrink small outline package; 8 leads; body width
3 mm; lead length 0.5 mm
SOT505-2
NTS0102GT
s02
XSON8
plastic extremely thin small outline package; no leads; 8
terminals; body 1 × 1.95 × 0.5 mm
SOT833-1
NTS0102GD
s02
XSON8
plastic extremely thin small outline package; no leads; 8
terminals; body 3 × 2 × 0.5 mm
SOT996-2
NTS0102GF
s2
XSON8
extremely thin small outline package; no leads; 8 terminals;
body 1.35 × 1 × 0.5 mm
SOT1089
NTS0102TL
tS2
XSON8
plastic extremely thin small outline package; no leads; 8
terminals; body 3 x 2 x 0.5 mm
SOT1052-2
4.1 Ordering options
Table 2. Ordering options
Type number
Orderable part
number
Package
Packing
[1]
method
Minimum order
quantity
Temperature
NTS0102DP
NTS0102DP,125
TSSOP8
Reel 7" Q3 NDP
3000
–40 °C to +125 °C
NTS0102GT
NTS0102GT,115
XSON8
Reel 7" Q1 NDP
5000
–40 °C to +125 °C
NTS0102GD
NTS0102GD,125
XSON8
Reel 7" Q3 NDP
3000
–40 °C to +125 °C
NTS0102GF
NTS0102GF,115
XSON8
Reel 7" Q1 NDP
5000
–40 °C to +125 °C
NTS0102TL
NTS0102TLH
XSON8
Reel 7" Q3 NDP
4000
–40 °C to +125 °C
[2]
[1]
[2]
Standard packing quantities and other packaging data are available at www.nxp.com/packages/.
Discontinuation Notice 202111012DN - drop in replacement is NTS0102TLH.
The TL package has a center pad vs no center pad for the GD package. The TL package pad is not electrically connected to the silicon and is not required
to connect to the PCB so it can drop onto the GD package PCB layout. If the existing GD package has a trace underneath the risk is low since the TL
package center pad is not connected to the silicon. If there are multiple traces there could be EMI and cross talk. In both cases the customer needs to
evaluate risk.
Note: The length and width are reversed between the "GD" and "TL" package drawings but the shorter edge contains the pins and is 2.0 mm in both
cases.
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
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2 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
5
Functional diagram
OE
A2
GATE BIAS
6
4
1
A1
B2
5
8
VCC(A)
GATE BIAS
B1
VCC(B)
001aal905
Figure 1. Logic symbol
6
Pinning information
6.1 Pinning
NTS0102
NTS0102
B2
1
8
B1
GND
2
7
VCC(B)
VCC(A)
3
6
OE
A2
4
5
A1
8
B1
GND
2
7
VCC(B)
VCC(A)
3
6
OE
A2
4
5
A1
001aam489
Figure 2. Pin configuration SOT505-2 (TSSOP8)
Product data sheet
1
Transparent top view
001aam488
NTS0102
B2
Figure 3. Pin configuration SOT833-1 (XSON8) and
SOT1089 (XSON8)
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3 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
NTS0102
NTS0102TLH
B2
1
8
B1
B2
1
8
B1
GND
2
7
VCC(B)
GND
2
7
VCC(B)
VCC(A)
3
6
OE
VCC(A)
3
6
OE
A2
4
5
A1
A2
4
5
A1
001aam490
aaa-044580
Transparent top view
Transparent top view
Figure 4. Pin configuration SOT996-2 (XSON8)
Figure 5. Pin configuration SOT1052-2 (XSON8)
6.2 Pin description
Table 3. Pin description
Symbol
Pin
Description
B2, B1
1, 8
data input or output (referenced to VCC(B))
GND
2
ground (0 V)
VCC(A)
3
supply voltage A
A2, A1
4, 5
data input or output (referenced to VCC(A))
OE
6
output enable input (active HIGH; referenced to VCC(A))
VCC(B)
7
supply voltage B
7
Functional description
Table 4. Function table
[1]
Supply voltage
Input
Input/output
VCC(A)
VCC(B)
OE
An
Bn
1.65 V to VCC(B)
2.3 V to 5.5 V
L
Z
Z
1.65 V to VCC(B)
2.3 V to 5.5 V
H
input or output
output or input
X
Z
Z
GND
[1]
[2]
[2]
GND
[2]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
When either VCC(A) or VCC(B) is at GND level, the device goes into power-down mode.
8
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC(A)
supply voltage A
VCC(B)
supply voltage B
VI
input voltage
NTS0102
Product data sheet
Conditions
Min
Max
Unit
–0.5
+6.5
V
–0.5
+6.5
V
A port and OE input
[1] [2]
–0.5
+6.5
V
B port
[1] [2]
–0.5
+6.5
V
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
Table 5. Limiting values...continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VO
Parameter
Conditions
Min
Max
Unit
–0.5
VCCO + 0.5
V
A port
–0.5
+4.6
V
B port
–0.5
+6.5
V
–50
—
mA
–50
—
mA
—
±50
mA
—
100
mA
–100
—
mA
–65
+150
°C
—
250
mW
Active mode
output voltage
[1] [2]
A or B port
Power-down or 3-state mode
IIK
input clamping current
VI < 0 V
IOK
output clamping current
VO < 0 V
IO
output current
VO = 0 V to VCCO
ICC
supply current
ICC(A) or ICC(B)
IGND
ground current
Tstg
storage temperature
Ptot
[1]
[2]
[3]
total power dissipation
Tamb = -40 °C to +125 °C
[1]
[2]
[3]
The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.
VCCO is the supply voltage associated with the output.
For TSSOP8 package: above 55 °C, the value of Ptot derates linearly with 2.5 mW/K.
For XSON8 packages: above 118 °C, the value of Ptot derates linearly with 7.8 mW/K.
9
Recommended operating conditions
Table 6. Recommended operating conditions
Symbol
Parameter
VCC(A)
[1][2]
Conditions
Min
Max
Unit
supply voltage A
1.65
3.6
V
VCC(B)
supply voltage B
2.3
5.5
V
Tamb
ambient temperature
–40
+125
°C
Δt/ΔV
input transition rise and fall rate
—
10
ns/V
—
10
ns/V
A or B port; push-pull driving
VCC(A) = 1.65 V to 3.6 V;
VCC(B) = 2.3 V to 5.5 V
OE input
VCC(A) = 1.65 V to 3.6 V;
VCC(B) = 2.3 V to 5.5 V
[1]
[2]
The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or both at GND.
VCC(A) must be less than or equal to VCC(B).
10 Static characteristics
Table 7. Typical static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
II
OE input; VI = 0 V to 3.6 V; VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
—
—
±1
μA
input leakage
current
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
Table 7. Typical static characteristics...continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
—
—
±1
μA
A port; VI or VO = 0 V to 3.6 V; VCC(A) = 0 V; VCC(B) = 0 V to
5.5 V
—
—
±1
μA
B port; VI or VO = 0 V to 5.5 V; VCC(B) = 0 V; VCC(A) = 0 V to
3.6 V
—
—
±1
μA
IOZ
OFF-state output A or B port; VO = 0 V or VCCO; VCC(A) = 1.65 V to 3.6 V;
current
VCC(B) = 2.3 V to 5.5 V
IOFF
power-off
leakage current
[1]
CI
input
capacitance
OE input; VCC(A) = 3.3 V; VCC(B) = 3.3 V
—
1
—
pF
CI/O
input/output
capacitance
A port
—
5
—
pF
B port
—
8.5
—
pF
A or B port; VCC(A) = 3.3 V; VCC(B) = 3.3 V
—
11
—
pF
[1]
VCCO is the supply voltage associated with the output.
Table 8. Typical supply current
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 °C.
VCC(A)
VCC(B)
Unit
2.5 V
3.3 V
5.0 V
ICC(A)
ICC(B)
ICC(A)
ICC(B)
ICC(A)
ICC(B)
1.8 V
0.1
0.5
0.1
1.5
0.1
4.6
μA
2.5 V
0.1
0.1
0.1
0.8
0.1
3.8
μA
3.3 V
—
0.1
0.1
0.1
2.8
μA
—
Table 9. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VIH
HIGH-level
input voltage
Conditions
-40 °C to +85 °C
-40 °C to +125 °C
Min
Max
Min
Max
Unit
A port
VCC(A) = 1.65 V to 1.95 V;
VCC(B) = 2.3 V to 5.5 V
[1]
VCCI - 0.2
—
VCCI - 0.2
—
V
VCC(A) = 2.3 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
[1]
VCCI - 0.4
—
VCCI - 0.4
—
V
[1]
VCCI - 0.4
—
VCCI - 0.4
—
V
0.65VCC(A)
—
0.65VCC(A)
—
V
B port
VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
OE input
VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
Table 9. Static characteristics...continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VIL
LOW-level
input voltage
Conditions
-40 °C to +85 °C
-40 °C to +125 °C
Unit
Min
Max
Min
Max
—
0.15
—
0.15
—
0.35VCC(A)
—
0.67VCCO
—
0.67VCCO
—
V
—
0.4
—
0.4
V
—
±2
—
±12
μA
—
±2
—
±12
μA
A or B port
VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
V
OE input
VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
0.35VCC(A) V
HIGH-level
output voltage
IO = -20 μA
LOW-level
output voltage
A or B port; IO = 1 mA
II
input leakage
current
OE input; VI = 0 V to 3.6 V; VCC(A)
= 1.65 V to 3.6 V; VCC(B) = 2.3 V to
5.5 V
IOZ
OFF-state
output current
A or B port; VO = 0 V or VCCO;
VCC(A) = 1.65 V to 3.6 V; VCC(B) =
2.3 V to 5.5 V
IOFF
power-off
leakage
current
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V
—
±2
—
±12
μA
B port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V; VCC(A) = 0 V to 3.6 V
—
±2
—
±12
μA
supply current
VI = 0 V or VCCI; IO = 0 A
VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
—
2.4
—
15
μA
VCC(A) = 3.6 V; VCC(B) = 0 V
—
2.2
—
15
μA
VCC(A) = 0 V; VCC(B) = 5.5 V
—
–1
—
–8
μA
VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
—
12
—
30
μA
VCC(A) = 3.6 V; VCC(B) = 0 V
—
–1
—
–5
μA
VCC(A) = 0 V; VCC(B) = 5.5 V
—
1
—
6
μA
—
14.4
—
30
μA
VOH
VOL
ICC
VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
[2]
[2]
VI ≤ 0.15 V; VCC(A) = 1.65 V to
3.6 V; VCC(B) = 2.3 V to 5.5 V
[2]
[1]
ICC(A)
ICC(B)
ICC(A) + ICC(B)
VCC(A) = 1.65 V to 3.6 V; VCC(B)
= 2.3 V to 5.5 V
[1]
[2]
VCCI is the supply voltage associated with the input.
VCCO is the supply voltage associated with the output.
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
11 Dynamic characteristics
[1]
Table 10. Dynamic characteristics for temperature range -40 °C to +85 °C
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 8; for wave forms see Figure 6 and Figure 7.
Symbol Parameter
Conditions
VCC(B)
Unit
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5.0 V ± 0.5 V
Min
Max
Min
Max
Min
Max
VCC(A) = 1.8 V ± 0.15 V
tPHL
HIGH to LOW
propagation delay
A to B
—
4.6
—
4.7
—
5.8
ns
tPLH
LOW to HIGH
propagation delay
A to B
—
6.8
—
6.8
—
7.0
ns
tPHL
HIGH to LOW
propagation delay
B to A
—
4.4
—
4.5
—
4.7
ns
tPLH
LOW to HIGH
propagation delay
B to A
—
5.3
—
4.5
—
0.5
ns
ten
enable time
OE to A; B
—
200
—
200
—
200
ns
OE to A; no external load
[2]
—
25
—
25
—
25
ns
OE to B; no external load
[2]
—
25
—
25
—
25
ns
OE to A
—
230
—
230
—
230
ns
OE to B
—
200
—
200
—
200
ns
LOW to HIGH
output transition
time
A port
3.2
9.5
2.3
9.3
1.8
7.6
ns
B port
3.3
10.8
2.7
9.1
2.7
7.6
ns
HIGH to LOW
output transition
time
A port
2.0
5.9
1.9
6.0
1.7
13.3
ns
B port
2.9
7.6
2.8
7.5
2.8
10.0
ns
tsk(o)
output skew time
between channels
—
0.7
—
0.7
—
0.7
ns
tW
pulse width
data inputs
20
—
20
—
20
—
ns
fdata
data rate
—
50
—
50
—
50
Mbit/s
tdis
tTLH
tTHL
disable time
[3]
VCC(A) = 2.5 V ± 0.2 V
tPHL
HIGH to LOW
propagation delay
A to B
—
3.2
—
3.3
—
3.4
ns
tPLH
LOW to HIGH
propagation delay
A to B
—
3.5
—
4.1
—
4.4
ns
tPHL
HIGH to LOW
propagation delay
B to A
—
3.0
—
3.6
—
4.3
ns
tPLH
LOW to HIGH
propagation delay
B to A
—
2.5
—
1.6
—
0.7
ns
ten
enable time
OE to A; B
tdis
disable time
—
200
—
200
—
200
ns
OE to A; no external load
[2]
—
20
—
20
—
20
ns
OE to B; no external load
[2]
—
20
—
20
—
20
ns
—
200
—
200
—
200
ns
OE to A
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
[1]
Table 10. Dynamic characteristics for temperature range -40 °C to +85 °C ...continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 8; for wave forms see Figure 6 and Figure 7.
Symbol Parameter
Conditions
VCC(B)
Unit
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5.0 V ± 0.5 V
Min
Max
Min
Max
Min
Max
OE to B
—
200
—
200
—
200
ns
LOW to HIGH
output transition
time
A port
2.8
7.4
2.6
6.6
1.8
6.2
ns
B port
3.2
8.3
2.9
7.9
2.4
6.8
ns
HIGH to LOW
output transition
time
A port
1.9
5.7
1.9
5.5
1.8
5.3
ns
B port
2.2
7.8
2.4
6.7
2.6
6.6
ns
tsk(o)
output skew time
between channels
—
0.7
—
0.7
—
0.7
ns
tW
pulse width
data inputs
20
—
20
—
20
—
ns
fdata
data rate
—
50
—
50
—
50
Mbit/s
tTLH
tTHL
[3]
VCC(A) = 3.3 V ± 0.3 V
tPHL
HIGH to LOW
propagation delay
A to B
—
—
—
2.4
—
3.1
ns
tPLH
LOW to HIGH
propagation delay
A to B
—
—
—
4.2
—
4.4
ns
tPHL
HIGH to LOW
propagation delay
B to A
—
—
—
2.5
—
3.3
ns
tPLH
LOW to HIGH
propagation delay
B to A
—
—
—
2.5
—
2.6
ns
ten
enable time
OE to A; B
—
—
—
200
—
200
ns
OE to A; no external load
[2]
—
—
—
15
—
15
ns
OE to B; no external load
[2]
—
—
—
15
—
15
ns
OE to A
—
—
—
260
—
260
ns
OE to B
—
—
—
200
—
200
ns
LOW to HIGH
output transition
time
A port
—
—
2.3
5.6
1.9
5.9
ns
B port
—
—
2.5
6.4
2.1
7.4
ns
HIGH to LOW
output transition
time
A port
—
—
2.0
5.4
1.9
5.0
ns
B port
—
—
2.3
7.4
2.4
7.6
ns
tsk(o)
output skew time
between channels
—
—
—
0.7
—
0.7
ns
tW
pulse width
data inputs
—
—
20
—
20
—
ns
fdata
data rate
—
—
—
50
—
50
Mbit/s
tdis
disable time
tTLH
tTHL
[1]
[2]
[3]
[3]
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
Delay between OE going LOW and when the outputs are actually disabled.
Skew between any two outputs of the same package switching in the same direction.
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
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9 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
[1]
Table 11. Dynamic characteristics for temperature range -40 °C to +125 °C
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 8; for wave forms see Figure 6 and Figure 7.
Symbol Parameter
Conditions
VCC(B)
Unit
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5.0 V ± 0.5 V
Min
Max
Min
Max
Min
Max
VCC(A) = 1.8 V ± 0.15 V
tPHL
HIGH to LOW
propagation delay
A to B
—
5.8
—
5.9
—
7.3
ns
tPLH
LOW to HIGH
propagation delay
A to B
—
8.5
—
8.5
—
8.8
ns
tPHL
HIGH to LOW
propagation delay
B to A
—
5.5
—
5.7
—
5.9
ns
tPLH
LOW to HIGH
propagation delay
B to A
—
6.7
—
5.7
—
0.7
ns
ten
enable time
OE to A; B
—
200
—
200
—
200
ns
OE to A; no external load
[2]
—
30
—
30
—
30
ns
OE to B; no external load
[2]
—
30
—
30
—
30
ns
OE to A
—
250
—
250
—
250
ns
OE to B
—
220
—
220
—
220
ns
LOW to HIGH
output transition
time
A port
3.2
11.9
2.3
11.7
1.8
9.5
ns
B port
3.3
13.5
2.7
11.4
2.7
9.5
ns
HIGH to LOW
output transition
time
A port
2.0
7.4
1.9
7.5
1.7
16.7
ns
B port
2.9
9.5
2.8
9.4
2.8
12.5
ns
tsk(o)
output skew time
between channels
—
0.8
—
0.8
—
0.8
ns
tW
pulse width
data inputs
20
—
20
—
20
—
ns
fdata
data rate
—
50
—
50
—
50
Mbit/
s
tdis
tTLH
tTHL
disable time
[3]
VCC(A) = 2.5 V ± 0.2 V
tPHL
HIGH to LOW
propagation delay
A to B
—
4.0
—
4.2
—
4.3
ns
tPLH
LOW to HIGH
propagation delay
A to B
—
4.4
—
5.2
—
5.5
ns
tPHL
HIGH to LOW
propagation delay
B to A
—
3.8
—
4.5
—
5.4
ns
tPLH
LOW to HIGH
propagation delay
B to A
—
3.2
—
2.0
—
0.9
ns
ten
enable time
OE to A; B
tdis
disable time
NTS0102
Product data sheet
—
200
—
200
—
200
ns
OE to A; no external load
[2]
—
25
—
25
—
25
ns
OE to B; no external load
[2]
—
25
—
25
—
25
ns
OE to A
—
220
—
220
—
220
ns
OE to B
—
220
—
220
—
220
ns
All information provided in this document is subject to legal disclaimers.
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10 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
[1]
Table 11. Dynamic characteristics for temperature range -40 °C to +125 °C ...continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 8; for wave forms see Figure 6 and Figure 7.
Symbol Parameter
Conditions
VCC(B)
Unit
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5.0 V ± 0.5 V
Min
Max
Min
Max
Min
Max
LOW to HIGH
output transition
time
A port
2.8
9.3
2.6
8.3
1.8
7.8
ns
B port
3.2
10.4
2.9
9.7
2.4
8.3
ns
HIGH to LOW
output transition
time
A port
1.9
7.2
1.9
6.9
1.8
6.7
ns
B port
2.2
9.8
2.4
8.4
2.6
8.3
ns
tsk(o)
output skew time
between channels
—
0.8
—
0.8
—
0.8
ns
tW
pulse width
data inputs
20
—
20
—
20
—
ns
fdata
data rate
—
50
—
50
—
50
Mbit/
s
tTLH
tTHL
[3]
VCC(A) = 3.3 V ± 0.3 V
tPHL
HIGH to LOW
propagation delay
A to B
—
—
—
3.0
—
3.9
ns
tPLH
LOW to HIGH
propagation delay
A to B
—
—
—
5.3
—
5.5
ns
tPHL
HIGH to LOW
propagation delay
B to A
—
—
—
3.2
—
4.2
ns
tPLH
LOW to HIGH
propagation delay
B to A
—
—
—
3.2
—
3.3
ns
ten
enable time
OE to A; B
—
—
—
200
—
200
ns
OE to A; no external load
[2]
—
—
—
20
—
20
ns
OE to B; no external load
[2]
—
—
—
20
—
20
ns
OE to A
—
—
—
280
—
280
ns
OE to B
—
—
—
220
—
220
ns
LOW to HIGH
output transition
time
A port
—
—
2.3
7.0
1.9
7.4
ns
B port
—
—
2.5
8.0
2.1
9.3
ns
HIGH to LOW
output transition
time
A port
—
—
2.0
6.8
1.9
6.3
ns
B port
—
—
2.3
9.3
2.4
9.5
ns
tsk(o)
output skew time
between channels
—
—
—
0.8
—
0.8
ns
tW
pulse width
data inputs
—
—
20
—
20
—
ns
fdata
data rate
—
—
—
50
—
50
Mbit/
s
tdis
disable time
tTLH
tTHL
[1]
[2]
[3]
[3]
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
Delay between OE going LOW and when the outputs are actually disabled.
Skew between any two outputs of the same package switching in the same direction.
NTS0102
Product data sheet
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© 2022 NXP B.V. All rights reserved.
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
12 Waveforms
VI
An, Bn
input
VM
GND
tPHL
VOH
Bn, An
output
tPLH
90 %
VM
10 %
VOL
tTHL
tTLH
001aal918
Measurement points are given in Table 12.
VOL and VOH are typical output voltage levels that occur with the output load.
Figure 6. The data input (An, Bn) to data output (Bn, An) propagation delay times
VI
OE input
VM
GND
tPLZ
output
LOW-to-OFF
OFF-to-LOW
tPZL
VCCO
VM
VX
VOL
tPHZ
output
HIGH-to-OFF
OFF-to-HIGH
VOH
tPZH
VY
VM
GND
outputs
enabled
outputs
disabled
outputs
enabled
001aal919
Measurement points are given in Table 12.
VOL and VOH are typical output voltage levels that occur with the output load.
Figure 7. Enable and disable times
Table 12. Measurement points
[1][2]
Supply voltage
Input
Output
VCCO
VM
VM
VX
VY
1.8 V ± 0.15 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH – 0.15 V
2.5 V ± 0.2 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH – 0.15 V
3.3 V ± 0.3 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH – 0.3 V
5.0 V ± 0.5 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH– 0.3 V
[1]
[2]
VCCI is the supply voltage associated with the input.
VCCO is the supply voltage associated with the output.
NTS0102
Product data sheet
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
tW
VI
90 %
negative
pulse
VM
VM
10 %
0V
tf
tr
tr
VI
tf
90 %
positive
pulse
VM
VM
10 %
0V
tW
VEXT
VCC
G
VI
RL
VO
DUT
CL
RL
001aal963
Test data is given in Table 13.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz; ZO = 50 Ω; dV/dt ≥ 1.0 V/
ns.
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Figure 8. Test circuit for measuring switching times
Table 13. Test data
Supply voltage
Input
VCC(A)
VCC(B)
[1]
VI
Δt/ΔV
CL
[2]
RL
1.65 V to 3.6 V
2.3 V to 5.5 V
VCCI
≤ 1.0 ns/V
15 pF
50 kΩ, 1 MΩ open
[1]
[2]
[3]
Load
VEXT
tPLH, tPHL
[3]
tPZH, tPHZ
tPZL, tPLZ
open
2VCCO
VCCI is the supply voltage associated with the input.
For measuring data rate, pulse width, propagation delay, and output rise and fall measurements, RL = 1 MΩ; for measuring enable and disable times, RL =
50 KΩ.
VCCO is the supply voltage associated with the output.
13 Application information
13.1 Applications
Voltage level-translation applications. The NTS0102 can be used in point-to-point
applications to interface between devices or systems operating at different supply
2
voltages. The device is primarily targeted at I C or 1-wire which use open-drain drivers,
it may also be used in applications where push-pull drivers are connected to the ports,
however the NTB0102 may be more suitable.
NTS0102
Product data sheet
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
1.8 V
3.3 V
0.1 µF
1.8 V
SYSTEM
CONTROLLER
VCC(A)
VCC(B)
3.3 V
SYSTEM
0.1 µF
1 µF
OE
NTS0102
DATA
A1
B1
A2
B2
DATA
001aam491
Figure 9. Typical operating circuit
13.2 Architecture
The architecture of the NTS0102 is shown in Figure 10. The device does not require an
extra input signal to control the direction of data flow from A to B or B to A.
VCC(A)
VCC(B)
T1
ONE
SHOT
ONE
SHOT
T2
10 kΩ
10 kΩ
GATE BIAS
A
T3
B
001aal965
Figure 10. Architecture of NTS0102 I/O cell (one channel)
The NTS0102 is a "switch" type voltage translator, it employs two key circuits to enable
voltage translation:
1. A pass-gate transistor (N-channel) that ties the ports together.
2. An output edge-rate accelerator that detects and accelerates rising edges on the I/O
pins.
The gate bias voltage of the pass gate transistor (T3) is set at approximately one
threshold voltage above the VCC level of the low-voltage side. During a LOW-to-HIGH
transition, the output one-shot accelerates the output transition by switching on the
PMOS transistors (T1, T2) bypassing the 10 kΩ pull-up resistors and increasing current
drive capability. The one-shot is activated once the input transition reaches approximately
VCCI/2; it is de-activated approximately 50 ns after the output reaches VCCO/2. During the
acceleration time, the driver output resistance is between approximately 50 Ω and 70 Ω.
To avoid signal contention and minimize dynamic ICC, the user should wait for the oneshot circuit to turn-off before applying a signal in the opposite direction. Pull-up resistors
are included in the device for DC current sourcing capability.
NTS0102
Product data sheet
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NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
13.3 Input driver requirements
As the NTS0102 is a switch type translator, properties of the input driver directly
effect the output signal. The external open-drain or push-pull driver applied to an I/O
determines the static current sinking capability of the system; the max data rate, HIGHto-LOW output transition time (tTHL), and propagation delay (tPHL) are dependent upon
the output impedance and edge-rate of the external driver. The limits provided for these
parameters in the data sheet assume a driver with output impedance below 50 Ω is used.
13.4 Output load considerations
The maximum lumped capacitive load that can be driven is dependent upon the one-shot
pulse duration. In cases with very heavy capacitive loading, there is a risk that the output
will not reach the positive rail within the one-shot pulse duration.
To avoid excessive capacitive loading, and to ensure correct triggering of the oneshot, it's recommended to use short trace lengths and low capacitance connectors on
NTS0102 PCB layouts. To ensure low impedance termination and avoid output signal
oscillations and one-shot re-triggering, the length of the PCB trace should be such that
the round trip delay of any reflection is within the one-shot pulse duration (approximately
50 ns).
13.5 Power up
During operation VCC(A) must never be higher than VCC(B), however during power-up
VCC(A) ≥ VCC(B) does not damage the device, so either power supply can be ramped up
first. There is no special power-up sequencing required. The NTS0102 includes circuitry
that disables all output ports when either VCC(A) or VCC(B) is switched off.
13.6 Enable and disable
An output enable input (OE) is used to disable the device. Setting OE = LOW
causes all I/Os to assume the high-impedance OFF-state. The disable time (tdis with
no external load) indicates the delay between when OE goes LOW and when outputs
actually become disabled. The enable time (ten) indicates the amount of time the user
must allow for one one-shot circuitry to become operational after OE is taken HIGH. To
ensure the high-impedance OFF-state during power-up or power-down, pin OE should be
tied to GND through a pull-down resistor, the minimum value of the resistor is determined
by the current-sourcing capability of the driver.
13.7 Pull-up or pull-down resistors on I/Os lines
Each A port I/O has an internal 10 kΩ pull-up resistor to VCC(A), and each B port I/O
has an internal 10 kΩ pull-up resistor to VCC(B). If a smaller value of pull-up resistor is
required, an external resistor must be added parallel to the internal 10 kΩ, this effects the
VOL level. When OE goes LOW the internal pull-ups of the NTS0102 are disabled.
13.8 GD package vs TL package
Due to differences in package construction the TL package has a center pad vs no center
pad for the GD package. The following section provides guidance in replacement vs new
applications.
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
© 2022 NXP B.V. All rights reserved.
15 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
• No trace under GD package
1. Replacement of GD package: The pad is not electrically connected to the silicon
(no wire bond and epoxy is not conductive) and can be left floating. It is not
required to be connected to the PCB. Simply place the TL package on the same
PCB traces as the existing GD package.
2. New use of the TL package: Place PCB trace for soldering of the center pad based
on PCB layout recommendations for better mechanical connection and thermal
conductivity. The PCB center pad can be connect to GND or left floating.
• Trace under the GD package
1. Replacement of GD package: It is not best practice to have center pad over the
trace but since the TL package center pad is not connected to the silicon the risk is
low. If there are multiple traces there could be EMI and cross talk. In both cases the
customer needs to evaluate risk.
2. New use of the TL package: Do not route traces under the package
NTS0102
Product data sheet
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16 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
14 Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
D
E
A
SOT505-2
X
c
HE
y
v M A
Z
5
8
A
A2
pin 1 index
(A3)
A1
θ
Lp
L
1
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.15
0.00
0.95
0.75
0.25
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
0.65
4.1
3.9
0.5
0.47
0.33
0.2
0.13
0.1
0.70
0.35
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT505-2
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-01-16
---
Figure 11. Package outline SOT505-2 (TSSOP8)
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
© 2022 NXP B.V. All rights reserved.
17 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm
1
2
SOT833-1
b
4
3
4×
(2)
L
L1
e
8
7
6
e1
5
e1
e1
8×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
2.0
1.9
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT833-1
---
MO-252
---
EUROPEAN
PROJECTION
ISSUE DATE
07-11-14
07-12-07
Figure 12. Package outline SOT833-1 (XSON8)
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
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18 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
XSON8: plastic extremely thin small outline package; no leads;
8 terminals; body 3 x 2 x 0.5 mm
D
SOT996-2
B
A
E
A
A1
detail X
terminal 1
index area
e1
1
4
8
5
C
C A B
C
v
w
b
e
L1
y1 C
y
L2
L
X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit(1)
mm
max
nom
min
A
0.5
A1
b
D
E
0.05 0.35
2.1
3.1
0.00 0.15
1.9
2.9
e
e1
0.5
1.5
L
L1
L2
0.5
0.15
0.6
0.3
0.05
0.4
v
0.1
w
y
0.05 0.05
y1
0.1
sot996-2_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
07-12-21
12-11-20
SOT996-2
Figure 13. Package outline SOT996-2 (XSON8)
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
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19 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
XSON8: extremely thin small outline package; no leads;
8 terminals; body 1.35 x 1 x 0.5 mm
SOT1089
E
terminal 1
index area
D
A
A1
detail X
(4×)(2)
e
L
(8×)(2)
b 4
5
e1
1
terminal 1
index area
8
L1
X
0
0.5
scale
Dimensions
Unit
mm
max
nom
min
1 mm
A(1)
0.5
A1
b
D
E
e
e1
L
L1
0.04 0.20 1.40 1.05
0.35 0.40
0.15 1.35 1.00 0.55 0.35 0.30 0.35
0.12 1.30 0.95
0.27 0.32
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
Outline
version
SOT1089
sot1089_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
10-04-09
10-04-12
MO-252
Figure 14. Package outline SOT1089 (XSON8)
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
© 2022 NXP B.V. All rights reserved.
20 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
Figure 15. Package outline SOT1052-2 (XSON8)
NTS0102
Product data sheet
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Rev. 4.4 — 6 October 2022
© 2022 NXP B.V. All rights reserved.
21 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
Figure 16. Package outline SOT1052-2 (XSON8)
NTS0102
Product data sheet
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22 / 38
NTS0102
NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
15 Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
15.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached
to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides
both the mechanical and the electrical connection. There is no single soldering method
that is ideal for all IC packages. Wave soldering is often preferred when through-hole
and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is
not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
15.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming
from a standing wave of liquid solder. The wave soldering process is suitable for the
following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
15.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
15.4 Reflow soldering
Key characteristics in reflow soldering are:
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Dual supply translating transceiver; open-drain; auto direction sensing
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads
to higher minimum peak temperatures (see Figure 17) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board
is heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder
paste characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 14 and Table 15
Table 14. SnPb eutectic process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (°C)
Volume (mm³)
< 350
≥ 350
< 2.5
235
220
≥ 2.5
220
220
Table 15. Lead-free process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (°C)
Volume (mm³)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 17.
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Dual supply translating transceiver; open-drain; auto direction sensing
temperature
maximum peak temperature
= MSL limit, damage level
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Figure 17. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
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Dual supply translating transceiver; open-drain; auto direction sensing
16 Soldering: PCB footprints
Footprint information for reflow soldering of TSSOP8 package
SOT505-2
Hx
Gx
P2
(0.125)
Hy
Gy
(0.125)
By
Ay
C
D2 (4x)
D1
P1
Generic footprint pattern
Refer to the package outline drawing for actual layout
solder land
occupied area
DIMENSIONS in mm
P1
P2
Ay
By
C
D1
D2
Gx
Gy
Hx
Hy
0.650
0.700
4.400
2.700
0.850
0.400
0.500
2.800
3.600
3.600
4.650
sot505-2_fr
Figure 18. PCB footprint for SOT505-2 (TSSOP8); reflow soldering
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Dual supply translating transceiver; open-drain; auto direction sensing
2.150
pa + oa
2.100
1.150
pa + oa
1.250 2.450
1.000
0.950
(7 ×)
0.475
0.250
(4 ×)
0.500
0.300
(4 ×)
0.125
(4 ×)
solder land
0.025
solder paste
placement area
occupied area
Dimensions in mm
sot833-1_fr
Figure 19. PCB footprint for SOT833-1 (XSON8); reflow soldering
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NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
2.400 pa + oa
2.000
0.500
0.500
0.250
0.025
0.025
4.250
3.400
pa + oa
2.000
4.000
0.900
solder lands
placement area
solder paste
occupied area
Dimensions in mm
sot996-2_fr
Figure 20. PCB footprint for SOT996-2 (XSON8U); reflow soldering
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NXP Semiconductors
Dual supply translating transceiver; open-drain; auto direction sensing
Footprint information for reflow soldering of XSON8 package
0.15
(8×)
SOT1089
0.25
(8×)
0.5
(8×)
0.7
1.4
0.6
(8×)
Dimensions in mm
solder paste = solder land
0.35
(3×)
1.4
solder resist
occupied area
sot1089_fr
Figure 21. PCB footprint for SOT1089 (XSON8); reflow soldering
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Dual supply translating transceiver; open-drain; auto direction sensing
Figure 22. PCB footprint for SOT1052-2 (XSON8); recommended solder mask opening pattern
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Dual supply translating transceiver; open-drain; auto direction sensing
Figure 23. PCB footprint for SOT1052-2 (XSON8); recommended I/O pads and solderable area
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Figure 24. PCB footprint for SOT1052-2 (XSON8); recommended solder paste stencil
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Dual supply translating transceiver; open-drain; auto direction sensing
Figure 25. PCB footprint for SOT1052-2 (XSON8); notes
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Dual supply translating transceiver; open-drain; auto direction sensing
17 Abbreviations
Table 16. Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
GPIO
General Purpose Input Output
HBM
Human Body Model
2
I C
Inter-Integrated Circuit
MM
Machine Model
PCB
Printed-circuit board
PMOS
Positive Metal Oxide Semiconductor
SMBus
System Management Bus
UART
Universal Asynchronous Receiver Transmitter
UTLP
Ultra Thin Leadless Package
18 Revision history
Table 17. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NTS0102 v.4.4
20221006
Product data sheet
202210008I
NTS0102 v.4.3
Modifications:
• Table 2: NTS0102TL Minimum Order Quantity corrected to 4Ku per reel
NTS0102 v.4.3
20220420
Product data sheet
—
NTS0102 v.4.2
NTS0102 v.4.2
20220303
Product data sheet
—
NTS0102 v.4.1
NTS0102 v.4.1
20211112
Product data sheet
—
NTS0102 v.4
NTS0102 v.4
20130123
Product data sheet
—
NTS0102 v.3
NTS0102 v.3
20111117
Product data sheet
—
NTS0102 v.2
NTS0102 v.2
20110411
Product data sheet
—
NTS0102 v.1
NTS0102 v.1
20100921
Product data sheet
—
—
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19 Legal information
19.1 Data sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — A draft status on a document indicates that the content is still
under internal review and subject to formal approval, which may result
in modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included in a draft version of a document and shall have no
liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
NTS0102
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use in non-automotive qualified products — Unless
this data sheet expressly states that this specific NXP Semiconductors
product is automotive qualified, the product is not suitable for automotive
use. It is neither qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts no liability for
inclusion and/or use of non-automotive qualified products in automotive
equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document, including
the legal information in that document, is for reference only. The English
version shall prevail in case of any discrepancy between the translated and
English versions.
NTS0102
Product data sheet
Security — Customer understands that all NXP products may be subject to
unidentified vulnerabilities or may support established security standards or
specifications with known limitations. Customer is responsible for the design
and operation of its applications and products throughout their lifecycles
to reduce the effect of these vulnerabilities on customer’s applications
and products. Customer’s responsibility also extends to other open and/or
proprietary technologies supported by NXP products for use in customer’s
applications. NXP accepts no liability for any vulnerability. Customer should
regularly check security updates from NXP and follow up appropriately.
Customer shall select products with security features that best meet rules,
regulations, and standards of the intended application and make the
ultimate design decisions regarding its products and is solely responsible
for compliance with all legal, regulatory, and security related requirements
concerning its products, regardless of any information or support that may be
provided by NXP.
NXP has a Product Security Incident Response Team (PSIRT) (reachable
at PSIRT@nxp.com) that manages the investigation, reporting, and solution
release to security vulnerabilities of NXP products.
19.4 Trademarks
Notice: All referenced brands, product names, service names, and
trademarks are the property of their respective owners.
NXP — wordmark and logo are trademarks of NXP B.V.
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Dual supply translating transceiver; open-drain; auto direction sensing
Tables
Tab. 1.
Tab. 2.
Tab. 3.
Tab. 4.
Tab. 5.
Tab. 6.
Tab. 7.
Tab. 8.
Tab. 9.
Ordering information ..........................................2
Ordering options ................................................2
Pin description ...................................................4
Function table ....................................................4
Limiting values .................................................. 4
Recommended operating conditions ................. 5
Typical static characteristics ..............................5
Typical supply current ....................................... 6
Static characteristics ......................................... 6
Tab. 10.
Tab. 11.
Tab. 12.
Tab. 13.
Tab. 14.
Tab. 15.
Tab. 16.
Tab. 17.
Dynamic characteristics for temperature
range -40 °C to +85 °C .....................................8
Dynamic characteristics for temperature
range -40 °C to +125 °C ................................. 10
Measurement points ........................................12
Test data ..........................................................13
SnPb eutectic process (from J-STD-020D) ..... 24
Lead-free process (from J-STD-020D) ............ 24
Abbreviations ...................................................34
Revision history ...............................................34
Figures
Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.
Fig. 10.
Fig. 11.
Fig. 12.
Fig. 13.
Fig. 14.
Fig. 15.
Fig. 16.
Logic symbol ..................................................... 3
Pin configuration SOT505-2 (TSSOP8) .............3
Pin configuration SOT833-1 (XSON8) and
SOT1089 (XSON8) ........................................... 3
Pin configuration SOT996-2 (XSON8) ...............4
Pin configuration SOT1052-2 (XSON8) .............4
The data input (An, Bn) to data output (Bn,
An) propagation delay times ........................... 12
Enable and disable times ................................12
Test circuit for measuring switching times ....... 13
Typical operating circuit ...................................14
Architecture of NTS0102 I/O cell (one
channel) ...........................................................14
Package outline SOT505-2 (TSSOP8) ............17
Package outline SOT833-1 (XSON8) ..............18
Package outline SOT996-2 (XSON8) ..............19
Package outline SOT1089 (XSON8) ............... 20
Package outline SOT1052-2 (XSON8) ............21
Package outline SOT1052-2 (XSON8) ............22
NTS0102
Product data sheet
Fig. 17.
Fig. 18.
Fig. 19.
Fig. 20.
Fig. 21.
Fig. 22.
Fig. 23.
Fig. 24.
Fig. 25.
Temperature profiles for large and small
components ..................................................... 25
PCB footprint for SOT505-2 (TSSOP8);
reflow soldering ............................................... 26
PCB footprint for SOT833-1 (XSON8);
reflow soldering ............................................... 27
PCB footprint for SOT996-2 (XSON8U);
reflow soldering ............................................... 28
PCB footprint for SOT1089 (XSON8);
reflow soldering ............................................... 29
PCB footprint for SOT1052-2 (XSON8);
recommended solder mask opening pattern ... 30
PCB footprint for SOT1052-2 (XSON8);
recommended I/O pads and solderable
area ................................................................. 31
PCB footprint for SOT1052-2 (XSON8);
recommended solder paste stencil ..................32
PCB footprint for SOT1052-2 (XSON8);
notes ................................................................33
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Dual supply translating transceiver; open-drain; auto direction sensing
Contents
1
2
3
4
4.1
5
6
6.1
6.2
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
13.5
13.6
13.7
13.8
14
15
15.1
15.2
15.3
15.4
16
17
18
19
General description ............................................ 1
Features and benefits .........................................1
Applications .........................................................1
Ordering information .......................................... 2
Ordering options ................................................ 2
Functional diagram ............................................. 3
Pinning information ............................................ 3
Pinning ............................................................... 3
Pin description ................................................... 4
Functional description ........................................4
Limiting values .................................................... 4
Recommended operating conditions ................ 5
Static characteristics .......................................... 5
Dynamic characteristics .....................................8
Waveforms ......................................................... 12
Application information .................................... 13
Applications ......................................................13
Architecture ......................................................14
Input driver requirements .................................15
Output load considerations .............................. 15
Power up ......................................................... 15
Enable and disable ..........................................15
Pull-up or pull-down resistors on I/Os lines ......15
GD package vs TL package ............................ 15
Package outline .................................................17
Soldering of SMD packages .............................23
Introduction to soldering .................................. 23
Wave and reflow soldering .............................. 23
Wave soldering ................................................ 23
Reflow soldering .............................................. 23
Soldering: PCB footprints ................................ 26
Abbreviations .................................................... 34
Revision history ................................................ 34
Legal information .............................................. 35
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© 2022 NXP B.V.
All rights reserved.
For more information, please visit: http://www.nxp.com
Date of release: 6 October 2022
Document identifier: NTS0102