NVT4857UKZ

NVT4857UK SD 3.0-SDR104 compliant integrated auto-direction control memory card voltage level translator with EMI filter and ESD protection Rev. 1.1 — 13 December 2016 Product data sheet 1. General description The device is an SD 3.0-compliant bidirectional dual voltage level translator with auto-direction control. It is designed to interface between a memory card operating at 1.8 V or 3.0 V signal levels and a host with a nominal supply voltage of 1.2 V to 1.8 V. The device supports SD 3.0 SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0 High-Speed (50 MHz) and Default-Speed (25 MHz) modes. The device has an integrated voltage selectable low dropout regulator to supply the card-side I/Os, an auto-enable/ disable function connected to the VSD supply pin, built-in EMI filters and robust ESD protections (IEC 61000-4-2, level 4). 2. Features and benefits  Supports up to 208 MHz clock rate  SD 3.0 specification-compliant voltage translation to support SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed and Default-Speed modes  1.2 V to 1.8 V host side interface voltage support  Feedback channel for clock synchronization  100 mA Low dropout voltage regulator to supply the card-side I/Os  Low power consumption by push-pull output stage with break-before-make architecture  Automatic enable and disable through VSD  Integrated pull-up and pull-down resistors: no external resistors required  Integrated EMI filters suppress higher harmonics of digital I/Os  Integrated 8 kV ESD protection according to IEC 61000-4-2, level 4 on card side  Level shifting buffers keep ESD stress away from the host (zero-clamping concept)  20-ball WLCSP; pitch 0.4 mm 3. Applications  Smart phones  Mobile handsets  Digital cameras  Tablet PCs  Laptop computers  SD, MMC or microSD card readers NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 4. Ordering information Table 1. Ordering information Type number NVT4857UK Topside mark N4857 Package Name Description Version WLCSP20 wafer level chip-size package; 20 bumps (5  4), size 1.7 x 2.1 x 0.49 mm, 0.4 mm pitch NVT4857 4.1 Ordering options Table 2. Ordering options Type number Orderable part number Package Packing method Minimum order quantity Temperature NVT4857UK NVT4857UKZ WLCSP20 REEL 7" Q1/T1 *SPECIAL MARK CHIPS DP 500 Tamb = 40 C to +85 C NVT4857UK NVT4857UKAZ WLCSP20 REEL 13" Q1/T1 *SPECIAL MARK CHIPS DP 10000 Tamb = 40 C to +85 C NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 2 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 5. Block diagram VSUPPLY PMU or DC/DC or LDO 3.0 V 400/800 mA VSD NVT4857 VSD VCCB I/O STAGE/LDO VCCA Cext CLKA CLK_FB DAT1B CMDA LEVEL TRANSLATOR LOGIC DAT0B GND CLKB HOST/ BASEBAND INTERFACE VSD DAT0A SD-CARD CMDB DAT3B DAT1A DAT2B DAT2A DAT3A CD SEL see data sheet for details basic push-pull driver implementation aaa-013308 Fig 1. Application diagram NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 3 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 6. Functional diagram VSD VSD track mode SEL CARD SIDE 1.8 V OR VSD R5 350 kΩ VOLTAGE SELECT + INTERNAL REFERENCE 1.8 V VOLTAGE REGULATOR VLDO R1 R2 CLKB CLKA R1 CLK_FB Rpu 70 kΩ R2 R1 Rpu 70 kΩ CMDB CMDA Rpu 70 kΩ R2 R1 Rpu 70 kΩ DAT0B R1 AUTO-DIRECTION CONTROL DAT0A Rpu 70 kΩ DAT1A R1 Rpu 70 kΩ R2 DAT1B Rpu 70 kΩ R2 DAT2B Rpu 70 kΩ DAT2A Rpu 70 kΩ R2 R1 DAT3B Rpu 70 kΩ DAT3A VCCA R4 100 kΩ R3 100 Ω CD GND aaa-013315 Fig 2. Functional diagram NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 4 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 7. Pinning information 7.1 Pinning bump A1 index area A1 A2 A3 A4 B1 B2 B3 B4 C1 C2 C3 C4 D1 D2 D3 D4 E1 E2 E3 E4 transparent top view, solder balls facing down aaa-018949 Fig 3. Pin configuration WLCSP20 DAT2A VCCA VSD DAT2B DAT3A CD VCCB DAT3B CMDA GND GND CMDB DAT0A CLKA CLKB DAT0B DAT1A CLK_FB SEL DAT1B aaa-013317 Fig 4. NVT4857UK pinout transparent top view Table 3. NVT4857UK Product data sheet Pin allocation table Pin Symbol Pin Symbol Pin Symbol Pin Symbol A1 DAT2A A2 VCCA A3 VSD A4 DAT2B B1 DAT3A B2 CD B3 VCCB B4 DAT3B C1 CMDA C2 GND C3 GND C4 CMDB D1 DAT0A D2 CLKA D3 CLKB D4 DAT0B E1 DAT1A E2 CLK_FB E3 SEL E4 DAT1B All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 5 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 7.2 Pin description Table 4. NVT4857UK Product data sheet Pin description Symbol [1] Pin Type [2] Description DAT2A A1 I/O data 2 input or output on host side VCCA A2 S supply voltage from host side VSD A3 S supply voltage DAT2B A4 I/O data 2 input or output on memory card side DAT3A B1 I/O data 3 input or output on host side CD B2 O card detect switch biasing output VCCB B3 S internal supply decoupling (VLDO) DAT3B B4 I/O data 3 input or output on memory card side CMDA C1 I/O command input or output on host side GND C2 S supply ground GND C3 S supply ground CMDB C4 I/O command input or output on memory card side DAT0A D1 I/O data 0 input or output on host side CLKA D2 I clock signal input on host side CLKB D3 O clock signal output on memory card side DAT0B D4 I/O data 0 input or output on memory card side DAT1A E1 I/O data 1 input or output on host side CLK_FB E2 O clock feedback output on host side SEL E3 I card side I/O voltage level select DAT1B E4 I/O data 1 input or output on memory card side [1] The pin names relate particularly to SD memory cards, but also apply to microSD and MMC memory cards. [2] I = input, O = output, I/O = input and output, S = power supply All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 6 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 8. Functional description 8.1 Level translator The bidirectional level translator shifts the data between the I/O supply levels of the host and the memory card. The voltage translator has to support several clock and data transfer rates at the signaling levels specified in the SD 3.0 standard specification. Table 5. Supported modes Bus speed mode Signal level (V) Clock rate (MHz) Data rate (MB/s) Default-Speed 3.3 25 12.5 High-Speed 3.3 50 25 SDR12 1.8 25 12.5 SDR25 1.8 50 25 SDR50 1.8 100 50 SDR104 1.8 208 104 DDR50 1.8 50 50 8.2 Enable and direction control The device contains an auto-enable feature. If VSD rises above 2.65 V, the LDO and the level translator logic is enabled automatically. As soon as VSD drops below the VSDdisable, as specified in Table 10, the LDO and the card side drivers and the level translator logic is disabled. All host side pins excluding CLKA1 are configured as inputs with a 70 k resistor pulled up to VCCA. 8.3 Integrated voltage regulator The low dropout voltage regulator delivers supply voltage for the voltage translators and the card-side input/output stages. It has to support 1.8 V and 3 V signaling modes as stipulated in the SD 3.0 specification. The switching time between the two output voltage modes is compliant with SD 3.0 specification. Depending on the signaling level at pin SEL, the regulator delivers 1.8 V (SEL = HIGH) or 3.0 V (SEL = LOW). Table 6. SD card side voltage level control signal truth table Input Output SEL[1] VCCB Pin[2] Function H 1.8 V DAT0B to DAT3B, CLKB low supply voltage level (1.8 Vtyp) L tracking VSD DAT0B to DAT3B, CLKB high supply voltage level (tracking VSD) [1] H = HIGH; L = LOW; X = don‘t care [2] Host-side pins are not influenced by SEL. An external capacitor is needed between the regulator output pin VCCB and ground for proper operation of the integrated voltage regulator. See Table 8 for recommended capacitance and equivalent series resistance. It is recommended to place the capacitor close to the VSD and VCCB pin and maintain short connections of both to ground. 1. CLKA is a pure high-ohmic input. Please refer to Figure 2 “Functional diagram” for more detail. NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 7 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 8.4 Feedback clock channel The clock is transmitted from the host to the memory card side. The voltage translator and the Printed-Circuit Board (PCB) tracks introduce some amount of delay. It reduces timing margin for data read back from memory card, especially at higher data rates. Therefore, a feedback path is provided to compensate the delay. The reasoning behind this approach is the fact that the clock is always delivered by the host, while the data in the timing critical read mode comes from the card. 8.5 EMI filter All input/output driver stages are equipped with EMI filters to reduce interferences towards sensitive mobile communication. 8.6 ESD protection The device has robust ESD protections on all memory card pins as well as on the VSD pin. The architecture prevents any stress for the host: the voltage translator discharges any stress to supply ground. Pin Card Detection (CD) might be pulled down by the memory card which has to be detected by the host. The pin is equipped with International Electrotechnical Commission (IEC) system-level ESD protection and pull-up resistor connected to the host supply VCCA. NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 8 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 9. Limiting values Table 7. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage 4 ms transient on pin VSD 0.5 +4.6 V on pin VCCA 0.5 +4.6 V VI input voltage 4 ms transient at I/O pins 0.5 +4.6 V Ptot total power dissipation Tamb = 40 C to +85 C - 1000 mW Tstg storage temperature 55 +150 C Tamb ambient temperature 40 +85 C VESD Ilu(IO) [1] electrostatic discharge voltage IEC 61000-4-2, level 4, all memory card-side pins, VSD and CD to ground [1] contact discharge 8 +8 kV air discharge 15 +15 kV Human Body Model (HBM) JEDEC JESD22-A114F; all pins 2000 +2000 V Charge Device Model (CDM) JEDEC JESD22-C101E; all pins 500 +500 V 100 +100 mA input/output latch-up current JESD 78B: 0.5  VCC < VI < 1.5  VCC; Tj < 125 C All system level tests are performed with the application-specific capacitors connected to the supply pins VSUPPLY, VLDO and VCCA. 10. Recommended operating conditions Table 8. Operating conditions Symbol Parameter supply voltage VCC Conditions Min Typ Max Unit 2.9 - 3.6 V 1.1 - 2.0 V 0.3 - VCCA + 0.3 V memory card side 0.3 - VO(LDO) + 0.3 V [1] on pin VSD on pin VCCA input voltage VI [2] host side Cext external capacitance recommended capacitor at pin VCCB - 2.2 - F ESR equivalent series resistance at pin VLDO 0 - 50 m Cext external capacitance recommended capacitor at pin VSD - 0.1 - F recommended capacitor at pin VCCA - 0.1 - F [1] By minimum value the device is still fully functional, but the voltage on pin VLDO might drop below the recommended memory card supply voltage. [2] The voltage must not exceed 3.6 V. NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 9 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator Table 9. Integrated resistors Tamb = 25 C; unless otherwise specified. Symbol Parameter Rpd pull-down resistance pull-up resistance Rpu Conditions Min series resistance [1] Max Unit R3; tolerance 30 % 70 100 130  R5 200 350 500 k all data lines and CMDx 49 70 91 k 70 100 130 k R4 Rs Typ host side; R1; tolerance 30 % [1] - 22.5 -  card side; R2; tolerance 30 % [1] - 15 -  Guaranteed by design. 11. Static characteristics Table 10. Static characteristics At recommended operating conditions; Tamb = 40 C to +85 C; voltages are referenced to GND (ground = 0 V); Cext = 2.2 F at pin VCCB; unless otherwise specified. Min Typ[2] Max Unit 2.25 2.45 2.65 V VSDdisable device disable voltage level VCCA 1.0 V, VSD falling edge 2.2 2.4 2.6 V VSDen - 50 - mV SEL = LOW;3.0 V  VSD  3.6 V; IO < 100 mA VSD-0.2 VSD-0.1 VSD V SEL = HIGH; VSD  2.9 V; IO < 100 mA 1.7 1.8 1.95 V - - 100 mA Symbol Parameter Conditions Automatic enable feature: VSD VSDen device enable voltage level VCCA 1.0 V, VSD rising edge VSDen hysteresis voltage Supply voltage regulator for card-side I/O pin: VCCB VO(LDO) IO(LDO) regulator/switch output voltage regulator/switch output current Host-side input signals: CMDA and DAT0A to DAT3A, CLKA; 1.1 V  VCCA  2.0 V VIH HIGH-level input voltage 0.75  VCCA - VCCA + 0.3 V VIL LOW-level input voltage 0.3 - 0.25  VCCA V Host-side control signals; 1.1 V  VCCA  2.0 V SEL VIH HIGH-level input voltage 0.75  VCCA - VCCA + 0.3 V VIL LOW-level input voltage 0.3 - 0.25  VCCA V Host-side output signals: CLK_FB, CMDA and DAT0A to DAT3A; 1.1 V  VCCA  2.0 V VOH VOL HIGH-level output voltage for CLK_FB IO = 2 mA; VI = VIH (card side) 0.8  VCCA - - V HIGH-level output voltage for CMDA, DATxA IO = 2 A; VI = VIH (card side) 0.8  VCCA - - V LOW-level output voltage IO = 2 mA; VI = VIL (card side) - - 0.15  VCCA V NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 10 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator Table 10. Static characteristics …continued At recommended operating conditions; Tamb = 40 C to +85 C; voltages are referenced to GND (ground = 0 V); Cext = 2.2 F at pin VCCB; unless otherwise specified. Symbol Min Typ[2] Max SEL = LOW (3.0 V card interface) 0.625  VO(LDO) - VO(LDO) + V 0.3 SEL = HIGH (1.8 V card interface) 0.625  VO(LDO) - VO(LDO) + V 0.3 SEL = LOW (3.0 V card interface) 0.3 - 0.3  VO(LDO) V SEL = HIGH (1.8 V card interface) 0.3 - 0.35  VO(LDO) V IO = 4 mA; VI = VIH (host side); SEL = LOW (3.0 V card interface) 0.85  VO(LDO) - VO(LDO) + V 0.3 IO = 2 mA; VI = VIH (host side); SEL = HIGH (1.8 V card interface) 0.85  VO(LDO) - 2.0 V HIGH-level output voltage for CMDB, DATxB IO = 2 A; VI = VIH (host side); SEL = HIGH (1.8 V card interface) 0.85  VO(LDO) - 2.0 V LOW-level output voltage IO = 4 mA; VI = VIL (host side); SEL = LOW (2.9 V card interface) 0.3 - 0.125  VO(LDO) V IO = 2 mA; VI = VI card L (host side); SEL = HIGH (1.8 V interface) 0.3 - 0.125  VO(LDO) V host side - 7 - pF card side - 15 - pF Parameter Conditions Unit Card-side input signals: CMDB and DAT0B to DAT3B HIGH-level input voltage VIH VIL LOW-level input voltage Card-side output signal CMDB and DAT0B to DAT3B, CLKB VOH VOL HIGH-level output voltage for CLKB only Bus signal equivalent capacitance channel capacitance Cch VI = 0 V; fi = 1 MHz; VSD = 3.0 V; VCCA = 1.8 V [3] Current consumption ICC(stat) ICC(stb) static supply current standby supply current VSD  VSDen (active mode); all inputs = HIGH; SEL = LOW (3.0 V card interface) - - 100 A SEL = HIGH (1.8 V card interface) - - 100 A - - 7 A VSD  VSDen and VCCA  1.0 V (inactive mode); all host side inputs = HIGH [1] Guaranteed by design and characterization. [2] Typical values are measured at Tamb = 25 C. [3] EMI filter line capacitance per data channel from I/O driver to pin; Cch is guaranteed by design. NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 11 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 12. Dynamic characteristics 12.1 Voltage regulator Table 11. Voltage regulator Tamb = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Voltage regulator output pin: VCCB tstartup(LDO) regulator start-up time VCCA = 1.8 V; VSD = 3.0 V; Cext = 2.2 F; see Figure 6 - - 400 s tf(o) output fall time VO(LDO) = 3.0 V to 1.8 V; SEL = LOW to HIGH; see Figure 5 - - 1 ms tr(o) output rise time VO(LDO) = 1.8 V to 3.0 V; SEL = HIGH to LOW; see Figure 5 - - 100 s VSD VSD CLK_SD 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 0V 5 ms (min.) VSD VSD CMD 0V VSD VSD DATA[3:0] 0V SEL 0V 50 % 50 % VSD VLDO 1.8 V 0V tr(o) tf(o) 97 % 1.8 V 150 mV VSD 1.8 V aaa-013318 Fig 5. Regulator mode change timing VSD 2.65 V VSD GND tstartup(reg) VO(reg) 97 % regulator output 0V aaa-013319 Measuring points: VSD signal at 2.65 V and regulator output signal at 0.97 VO(LDO). Fig 6. Regulator start-up time NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 12 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 12.2 Level translator Table 12. Level translator dynamic characteristics At recommended operating conditions; VCCA = 1.2 V; Tamb = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Host side transition times tr rise time tf fall time rise time tr fall time tf SEL = HIGH (1.8 V card interface); VCCA = 1.8 V [1] - 0.4 1.0 ns [1] - 0.4 1.0 ns SEL = HIGH (1.8 V card interface); VCCA = 1.2 V [1] - 0.4 1.0 ns [1] - 0.4 1.0 ns SEL = HIGH (1.8 V card interface) [2] 0.4 0.9 1.4 ns SEL = HIGH (1.8 V card interface) [2] 0.4 0.9 1.4 ns SEL = HIGH (1.8 V card interface); VCCA = 1.2 V - 3.0 5.5 ns SEL = HIGH (1.8 V card interface); VCCA = 1.2 V - 5.5 10.0 ns SEL = HIGH (1.8 V card interface); VCCA = 1.2 V - 2.5 4.5 ns Card side transition times rise time tr fall time tf Host to card propoagation delay DATxA to DATxB, CMDA to CMDB, CLKA to CLKB propagation delay tpd CLKA to CLK_FB propagation delay tpd Card to host propagation delay DATxB to DATxA, CMDB to CMDA tpd propagation delay [1] transition between VOL = 0.35 * VCCA and VOH = 0.65 * VCCA [2] transition between VOL = 0.45 V and VOH = 1.4 V VCC VOH VOL GND tf VOL tr VOH aaa-014796 VOH and VOL are specified in Table 12 as Table note [1] and Table note [2] Fig 7. Output rise and fall times NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 13 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator input 0.5*VCCI output 0.5*VCCI 0.5*VCCO tpd 0.5*VCCO tpd aaa-013321 Output delay is for every single channel, from input to output, 0.5*VCCI to 0.5*VCCO, in which VCCI and VCCO are the input and output voltage domain. Fig 8. Output delay timing 12.3 ESD characteristic of pin card detect Table 13. ESD characteristic of card detect At recommended operating conditions; Tamb = +25 C; voltages are referenced to GND (ground = 0 V); unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ESD protection pins: CD VBR rdyn [1] NVT4857UK Product data sheet breakdown voltage dynamic resistance TLP; I = 1 mA - 8 - V positive transient [1] - 0.5 -  negative transient [1] - 0.5 -  TLP according to ANSI-ESD STM5.5.1/IEC 62615 Zo = 50 ; pulse width = 100 ns; rise time = 200 ps; averaging window = 50 ns to 80 ns All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 14 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 13. Test information SXOVHZLGWK 9, QHJDWLYH LQSXW     9 WUR WIR WIR WUR 9,  SRVLWLYH LQSXW 9    SXOVHZLGWK 9&&$ 9&&% 38/6( *(1(5$725 5VRXUFH 9, 92 '87 5WHUP &/ 5/ DDD Definitions test circuit: Rsource = source resistance of pulse generator. Rterm = termination resistance should be equal to output impedance Zo of pulse generator. CL = load capacitance including jig and probe capacitance. RL = load resistance. Fig 9. NVT4857UK Product data sheet Load circuitry for measuring switching time All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 15 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 14. Package outline :/&63ZDIHUOHYHOFKLSVFDOHSDFNDJHEXPSV[[PP%DFNVLGHFRDWLQJLQFOXGHG ( % 197 $ EDOO$ LQGH[DUHD $ $ ' $ GHWDLO; H H ‘Y ‘Z E & $ % & & H \ ( H ' H & % $ EDOO$ LQGH[DUHD     ;  PP VFDOH 'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP $ $ $ E ' ( PD[       QRP       PLQ       H H H    Y Z \    1RWH%DFNVLGHFRDWLQJ—P 2XWOLQH YHUVLRQ ZOFVSBQYWBSR 5HIHUHQFHV ,(& -('(& -(,7$ (XURSHDQ SURMHFWLRQ ,VVXHGDWH   197 Fig 10. Package outline NVT4857UK (WLCSP20) NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 16 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 15. Packing information 4.00 ± 0.10 2.00 ± 0.05 4.00 ± 0.10 Ø 1.50 + 0.10 1.75 ± 0.10 8.00 5° max. 3.50 ± 0.05 + 0.30 − 0.10 K0 B0 2.25 ± 0.05 K0 K0 A0 Ø 0.50 ± 0.05 5° max. 0.65 ± 0.05 0.25 ± 0.02 1.85 ± 0.05 All dimensions in mm. aaa-013545 Fig 11. Carrier tape NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 17 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 16. Soldering of WLCSP packages 16.1 Introduction to soldering WLCSP packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering WLCSP (Wafer Level Chip-Size Packages) can be found in application note AN10439 “Wafer Level Chip Scale Package” and in application note AN10365 “Surface mount reflow soldering description”. Wave soldering is not suitable for this package. All NXP WLCSP packages are lead-free. 16.2 Board mounting Board mounting of a WLCSP requires several steps: 1. Solder paste printing on the PCB 2. Component placement with a pick and place machine 3. The reflow soldering itself 16.3 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 12) than a SnPb process, thus reducing the process window • Solder paste printing issues, such as smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature), and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic) while being low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 14. Table 14. Lead-free process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 12. NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 18 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 12. Temperature profiles for large and small components For further information on temperature profiles, refer to application note AN10365 “Surface mount reflow soldering description”. 16.3.1 Stand off The stand off between the substrate and the chip is determined by: • The amount of printed solder on the substrate • The size of the solder land on the substrate • The bump height on the chip The higher the stand off, the better the stresses are released due to TEC (Thermal Expansion Coefficient) differences between substrate and chip. 16.3.2 Quality of solder joint A flip-chip joint is considered to be a good joint when the entire solder land has been wetted by the solder from the bump. The surface of the joint should be smooth and the shape symmetrical. The soldered joints on a chip should be uniform. Voids in the bumps after reflow can occur during the reflow process in bumps with high ratio of bump diameter to bump height, i.e. low bumps with large diameter. No failures have been found to be related to these voids. Solder joint inspection after reflow can be done with X-ray to monitor defects such as bridging, open circuits and voids. 16.3.3 Rework In general, rework is not recommended. By rework we mean the process of removing the chip from the substrate and replacing it with a new chip. If a chip is removed from the substrate, most solder balls of the chip will be damaged. In that case it is recommended not to re-use the chip again. NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 19 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator Device removal can be done when the substrate is heated until it is certain that all solder joints are molten. The chip can then be carefully removed from the substrate without damaging the tracks and solder lands on the substrate. Removing the device must be done using plastic tweezers, because metal tweezers can damage the silicon. The surface of the substrate should be carefully cleaned and all solder and flux residues and/or underfill removed. When a new chip is placed on the substrate, use the flux process instead of solder on the solder lands. Apply flux on the bumps at the chip side as well as on the solder pads on the substrate. Place and align the new chip while viewing with a microscope. To reflow the solder, use the solder profile shown in application note AN10365 “Surface mount reflow soldering description”. 16.3.4 Cleaning Cleaning can be done after reflow soldering. NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 20 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 17. Abbreviations Table 15. Abbreviations Acronym Description DUT Device Under Test EMI ElectroMagnetic Interference ESD ElectroStatic Discharge MMC MultiMedia Card PCB Printed-Circuit Board RoHS Restriction of Hazardous Substances SD Secure Digital WLCSP Wafer-Level Chip-Scale Package 18. Revision history Table 16. Revision history Document ID Release date Data sheet status Change notice Supersedes NVT4857UK v.1.1 20161213 Product data sheet 201612019I NVT4857UK v.1 Modifications: NVT4857UK v.1 NVT4857UK Product data sheet • Table 1 “Ordering information”: Corrected topside mark from “NV4857” to “N4857” to reflect the production marking; no impact to product functionality. 20151120 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 - © NXP Semiconductors N.V. 2016. All rights reserved. 21 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 19. Legal information 19.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 19.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 19.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. NVT4857UK Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 22 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 19.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 20. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NVT4857UK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 13 December 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 23 of 24 NVT4857UK NXP Semiconductors SD 3.0 - SDR104 auto-direction control memory card level translator 21. Contents 1 2 3 4 4.1 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 9 10 11 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.3.1 16.3.2 16.3.3 16.3.4 17 18 19 19.1 19.2 19.3 19.4 20 21 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 5 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 6 Functional description . . . . . . . . . . . . . . . . . . . 7 Level translator . . . . . . . . . . . . . . . . . . . . . . . . . 7 Enable and direction control . . . . . . . . . . . . . . . 7 Integrated voltage regulator . . . . . . . . . . . . . . . 7 Feedback clock channel . . . . . . . . . . . . . . . . . . 8 EMI filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 ESD protection . . . . . . . . . . . . . . . . . . . . . . . . . 8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 9 Recommended operating conditions. . . . . . . . 9 Static characteristics. . . . . . . . . . . . . . . . . . . . 10 Dynamic characteristics . . . . . . . . . . . . . . . . . 12 Voltage regulator. . . . . . . . . . . . . . . . . . . . . . . 12 Level translator . . . . . . . . . . . . . . . . . . . . . . . . 13 ESD characteristic of pin card detect . . . . . . . 14 Test information . . . . . . . . . . . . . . . . . . . . . . . . 15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Packing information . . . . . . . . . . . . . . . . . . . . 17 Soldering of WLCSP packages. . . . . . . . . . . . 18 Introduction to soldering WLCSP packages . . 18 Board mounting . . . . . . . . . . . . . . . . . . . . . . . 18 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 18 Stand off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Quality of solder joint . . . . . . . . . . . . . . . . . . . 19 Rework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Cleaning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 21 Legal information. . . . . . . . . . . . . . . . . . . . . . . 22 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Contact information. . . . . . . . . . . . . . . . . . . . . 23 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2016. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 December 2016 Document identifier: NVT4857UK