1N5819RL

DATA SHEET www.onsemi.com Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. AXIAL LEAD CASE 59 STYLE 1 Features • • • • Extremely Low VF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are Pb−Free Devices* MARKING DIAGRAM Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds Polarity: Cathode Indicated by Polarity Band ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) A 1N581x YYWWG G A =Assembly Location 1N581x =Device Number x= 7, 8, or 9 YY =Year WW =Work Week G =Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 August, 2021 − Rev. 11 1 Publication Order Number: 1N5817/D 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non−Repetitive Peak Reverse Voltage RMS Reverse Voltage Symbol 1N5817 1N5818 1N5819 Unit VRRM VRWM VR 20 30 40 V VRSM 24 36 48 V VR(RMS) 14 21 28 V Average Rectified Forward Current (Note 1), (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) IO Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W) TA Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions, half−wave, single phase 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) 1.0 85 A 80 75 °C IFSM 25 (for one cycle) A TJ, Tstg −65 to +125 °C TJ(pk) 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) Characteristic Thermal Resistance, Junction−to−Ambient Symbol Max Unit RqJA 80 °C/W ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) (TL = 25°C) (TL = 100°C) 1. Lead Temperature reference is cathode lead 1/32 in from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. www.onsemi.com 2 Symbol 1N5817 1N5818 1N5819 Unit vF 0.32 0.45 0.75 0.33 0.55 0.875 0.34 0.6 0.9 V 1.0 10 1.0 10 1.0 10 IR mA 1N5817, 1N5818, 1N5819 NOTE 3. — DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). (1) TA(max) = TJ(max) − RqJAPF(AV) − RqJAPR(AV) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RqJA = Junction−to−ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) − RqJAPR(AV) TR, REFERENCE TEMPERATURE ( C) 125 40 105 RqJA (°C/W) = 110 95 80 60 85 75 3.0 2.0 4.0 5.0 7.0 10 VR, DC REVERSE VOLTAGE (VOLTS) 125 TR, REFERENCE TEMPERATURE ( C) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: ° 40 105 Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 109°C Step 1. Find @ VR = 9.2 V and RqJA = 80°C/W. Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W I(FM) = 10 and IF(AV) = 0.5 A. @ I(AV) 30 80 60 85 3.0 4.0 5.0 7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS) 30 Figure 2. Maximum Reference Temperature 1N5818 125 ° Step 4. Find TA(max) from equation (3). Step 4. Find TA(max) = 109 − (80) (0.5) = 69°C. 40 30 23 115 105 RqJA (°C/W) = 110 80 95 60 85 75 4.0 5.0 **Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819. 7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS) 30 Figure 3. Maximum Reference Temperature 1N5819 Table 1. Values for Factor F Half Wave Circuit Load Full Wave, Bridge Full Wave, Center Tapped* † Resistive Capacitive* Resistive Capacitive Resistive Capacitive Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3 Square Wave 0.75 1.5 0.75 0.75 †Use line to center tap voltage for Vin. 1.5 1.5 **Note that VR(PK) ≈ 2.0 Vin(PK). 23 RqJA (°C/W) = 110 95 75 TR, REFERENCE TEMPERATURE ( C) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5818 operated in a 12−volt dc supply using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RqJA = 80°C/W. 20 115 (4) VR(equiv) = Vin(PK) x F 15 Figure 1. Maximum Reference Temperature 1N5817 Substituting equation (2) into equation (1) yields: (3) 23 ° 115 (2) TA(max) = TR − RqJAPF(AV) 30 www.onsemi.com 3 40 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) R θ JL, THERMAL RESISTANCE, JUNCTION-TO-LEAD (°C/W) 1N5817, 1N5818, 1N5819 90 BOTH LEADS TO HEATSINK, EQUAL LENGTH 80 70 60 MAXIMUM 50 TYPICAL 40 30 20 10 1 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 5.0 3.0 Sine Wave I(FM) = π (Resistive Load) 2.0 I(AV) 1.0 0.7 0.5 Capacitive Loads dc 20 SQUARE WAVE 0.3 TJ ≈ 125°C 0.2 0.1 0.07 0.05 0.2 0.4 0.6 0.8 1.0 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMP) L, LEAD LENGTH (INCHES) Figure 4. Steady−State Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) { 5 10 4.0 Figure 5. Forward Power Dissipation 1N5817−19 1.0 0.7 0.5 0.3 ZqJL(t) = ZqJL • r(t) 0.2 Ppk 0.1 Ppk tp TIME 0.07 0.05 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. t1 DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where 0.03 DTJL = the increase in junction temperature above the lead temperature 0.02 i.e.: r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k Figure 6. Thermal Response NOTE 4. — MOUNTING DATA Data shown for thermal resistance, junction−to−ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. Mounting Method 1 Mounting Method 3 P.C. Board with 1−1/2″ x 1−1/2″ copper surface. P.C. Board with 1−1/2″ x 1−1/2″ copper surface. L = 3/8″ L L TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method Lead Length, L (in) 1/8 1/4 1/2 3/4 RqJA 1 52 65 72 85 °C/W 2 67 80 87 100 °C/W 3 50 BOARD GROUND PLANE Mounting Method 2 L °C/W L VECTOR PIN MOUNTING www.onsemi.com 4 10k 1N5817, 1N5818, 1N5819 NOTE 5. — THERMAL CIRCUIT MODEL (For heat conduction through the leads) RqS(A) RqL(A) RqJ(A) RqJ(K) TA(A) TC(A) TJ TA(K) TL(K) TC(K) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 100°C/W/in typically and 120°C/W/in maximum RqJ = 36°C/W typically and 46°C/W maximum. TA = Ambient Temperature TC = Case Temperature TJ = Junction Temperature TL = Lead Temperature RqS = Thermal Resistance, Heatsink to Ambient RqL = Thermal Resistance, Lead to Heatsink RqJ = Thermal Resistance, Junction to Case PD = Power Dissipation IFSM, PEAK SURGE CURRENT (AMP) 30 20 10 7.0 TC = 100°C 3.0 20 1 Cycle TL = 70°C f = 60 Hz 10 7.0 5.0 Surge Applied at Rated Load Conditions 2.0 25°C 3.0 1.0 2.0 5.0 7.0 10 20 NUMBER OF CYCLES 3.0 1.0 30 40 70 100 Figure 8. Maximum Non−Repetitive Surge Current 0.7 0.5 30 20 0.3 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMP) RqS(K) PD TL(A) 5.0 RqL(K) 0.2 0.1 0.07 0.05 15 100°C 5.0 3.0 2.0 75°C 1.0 0.5 0.3 0.2 0.03 0.02 0.1 TJ = 125°C 25°C 1N5817 1N5818 1N5819 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.05 0.03 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Forward Voltage Figure 9. Typical Reverse Current www.onsemi.com 5 36 40 1N5817, 1N5818, 1N5819 NOTE 6. — HIGH FREQUENCY OPERATION Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. C, CAPACITANCE (pF) 200 100 1N5817 70 1N5818 50 1N5819 30 TJ = 25°C f = 1.0 MHz 20 10 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 10. Typical Capacitance ORDERING INFORMATION Package Shipping† 1N5817 Axial Lead* 1000 Units / Bag 1N5817G Axial Lead* 1000 Units / Bag 1N5817RL Axial Lead* 5000 / Tape & Reel 1N5817RLG Axial Lead* 5000 / Tape & Reel 1N5818 Axial Lead* 1000 Units / Bag 1N5818G Axial Lead* 1000 Units / Bag 1N5818RL Axial Lead* 5000 / Tape & Reel 1N5818RLG Axial Lead* 5000 / Tape & Reel 1N5819 Axial Lead* 1000 Units / Bag 1N5819G Axial Lead* 1000 Units / Bag 1N5819RL Axial Lead* 5000 / Tape & Reel 1N5819RLG Axial Lead* 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U DATE 15 FEB 2005 B K STYLE 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. D STYLE 2 F A SCALE 1:1 POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY A xxx xxx YYWW STYLE 1 xxx A YY WW A xxx xxx YYWW STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42045B AXIAL LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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