2N4401G

2N4401 General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD Value 40 60 6.0 600 625 5.0 1.5 12 − 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C 2 BASE 1 EMITTER PD TO−92 CASE 29 STYLE 1 12 1 2 TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2N 4401 AYWW G G 2N4401 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 4 1 Publication Order Number: 2N4401/D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) Collector − Base Breakdown Voltage Emitter − Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hFE 20 40 80 100 40 − − 0.75 − − − − 300 − 0.4 0.75 0.95 1.2 − (IC = 1.0 mAdc, IB = 0) (IC = 0.1 mAdc, IE = 0) (IE = 0.1 mAdc, IC = 0) (VCE = 35 Vdc, VEB = 0.4 Vdc) (VCE = 35 Vdc, VEB = 0.4 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 − − − − − 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit Collector − Emitter Saturation Voltage Base − Emitter Saturation Voltage SMALL−SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product Collector−Base Capacitance Emitter−Base Capacitance Input Impedance Voltage Feedback Ratio Small−Signal Current Gain Output Admittance SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat) Vdc Vdc fT Ccb Ceb hie hre hfe hoe td tr ts tf 250 − − 1.0 0.1 40 1.0 − 6.5 30 15 8.0 500 30 MHz pF pF kW X 10−4 − mmhos ns ns ns ns (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) − − − − 15 20 225 30 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device 2N4401 2N4401G 2N4401RLRA 2N4401RLRAG 2N4401RLRMG 2N4401RLRP 2N4401RLRPG Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Ammo Box 2000 / Tape & Ammo Box 2000 / Tape & Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N4401 SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 - 2.0 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1.0 kW < 2.0 ns 200 W +16 V 0 CS* < 10 pF -14 V < 20 ns 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1.0 kW + 30 V 200 W CS* < 10 pF - 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time TRANSIENT CHARACTERISTICS 25°C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100°C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 QT VCC = 30 V IC/IB = 10 QA Figure 3. Capacitances Figure 4. Charge Data 100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10 100 70 tr 50 30 20 tf VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise and Fall Times http://onsemi.com 3 2N4401 300 200 t s′, STORAGE TIME (ns) ts′ = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns) 100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2 100 70 50 10 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA 8.0 NF, NOISE FIGURE (dB) 6.0 6.0 4.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 2.0 0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS) 50 k 100 k Figure 9. Frequency Effects Figure 10. Source Resistance Effects http://onsemi.com 4 2N4401 h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k 2N4401 UNIT 1 2N4401 UNIT 2 20 k 10 k 5.0 k 100 70 50 30 20 2N4401 UNIT 1 2N4401 UNIT 2 2.0 k 1.0 k 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Input Impedance h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 10 hoe , OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 2N4401 UNIT 1 2N4401 UNIT 2 20 10 5.0 2.0 1.0 2N4401 UNIT 1 2N4401 UNIT 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 5 2N4401 STATIC CHARACTERISTICS 3.0 h FE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 1.0 25°C 0.7 0.5 0.3 0.2 0.1 - 55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 15. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region 1.0 TJ = 25°C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C) + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 qVB for VBE 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 qVC for VCE(sat) 0.6 VBE @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 0.5 Figure 17. “On” Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 2N4401 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX H V 1 D G J C N N SECTION X−X DIM A B C D G H J K L N P R V R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K G XX V 1 D J C N SECTION X−X ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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