2N4401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Value Unit Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 RӨJA Thermal Resistance, junction to Ambient 1.EMILTTER 2.BASE 3. COLLECTOR ℃ ℃/mW 357 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 6 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 0.1mA 20 hFE(2) VCE=1V, IC=1mA 40 hFE(3) VCE=1V, IC= 10mA 80 hFE(4) VCE=1V, IC=150mA 100 hFE(5) VCE=2V, IC= 500mA 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE(sat)1 IC=150 mA, IB=15mA 0.4 V VCE(sat)2 IC=500 mA, IB=50mA 0.75 V VBE(sat)1 IC=150 mA, IB=15mA 0.95 V VBE(sat)2 IC=500 mA, IB=50mA 1.2 V Transition frequency fT Output Capacitance Cob Delay time td Rise time tr Storage time tS Fall time tf VCE= 10V, IC= 20mA, f=100MHz VCB=10V, IE= 0, f=100KHz VCC=30V, VBE(OFF)=2V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=-IB2= 15mA 250 MHz 6.5 pF 15 nS 20 nS 225 nS 30 nS B,Apr,2012 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ 1.0mA 0.9mA 0.8mA 0.7mA IC 200 DC CURRENT GAIN 150 —— IC COMMON EMITTER VCE=1V Ta=100℃ 0.6mA COLLECTOR CURRENT hFE 1000 hFE (mA) 250 2N4401 0.5mA 0.4mA 100 0.3mA 0.2mA 50 300 Ta=25℃ 100 30 IB=0.1mA 0 1 2 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) 1000 —— VCE 1 0.3 (V) IC VBEsat 1.0 Ta=100℃ 10 3 Ta=25℃ 30 100 30 COLLECTOR CURRENT 300 100 10 0.1 3 BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) 0 IC —— 600 (mA) IC 0.8 Ta=25℃ Ta=100℃ 0.6 β=10 β=10 10 0.4 1 10 3 100 30 COLLECTOR CURRENT IC VBE Cob/ Cib 100 —— 600 100 COLLECTOR CURRENT IC (mA) VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ Ta=100℃ Cib C (pF) 100 30 Ta=25℃ 10 10 Cob 3 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE fT 1000 —— VBE 1 0.1 1.0 1 0.3 (V) IC PC 750 10 3 REVERSE BIAS VOLTAGE —— V 20 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) (MHz) COMMON EMITTER VCE=10V Ta=25℃ fT TRANSITION FREQUENCY 30 10 (mA) CAPACITANCE IC COLLECTOR CURRENT —— 3 COMMON EMITTER VCE=1V (mA) 600 IC 1 600 300 100 10 100 30 COLLECTOR CURRENT IC (mA) 625 500 375 250 125 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 B,Apr,2012