2N5684

ON Semiconductort PNP High−Current Complementary Silicon Power Transistors . . . designed for use in high−power amplifier and switching circuit applications. 2N5684 NPN 2N5686 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS 300 WATTS • High Current Capability − • • w IC Continuous = 50 Amperes. DC Current Gain − hFE = 15 − 60 @ IC = 25 Adc Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. PD, POWER DISSIPATION (WATTS) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎ Î ÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5684 2N5686 80 80 Unit Vdc Vdc Vdc Adc Adc Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage 5.0 50 15 Collector Current − Continuous Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 300 1.715 Watts W/_C _C TJ, Tstg − 65 to + 200 CASE 197A−05 TO−204AE THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case Symbol θJC Max Unit 0.584 _C/W (1) Indicates JEDEC Registered Data. 300 250 200 150 100 50 0 0 20 40 60 Figure 1. Power Derating 1 80 100 120 140 TEMPERATURE (°C) 160 180 200 Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 11 Publication Order Number: 2N5684/D 2N5684 2N5686 t, TIME ( μs) ÎÎÎ Î Î Î ÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Vdc Collector−Emitter Sustaining Voltage (Note 2) (IC = 0.2 Adc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) VCEO(sus) ICEO ICEX 80 − mAdc mAdc − − − − − 1.0 2.0 10 2.0 5.0 Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO IEBO hFE mAdc mAdc − Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain (Note 2) (IC = 25 Adc, VCE = 2.0 Vdc) (IC = 50 Adc, VCE = 5.0 Vdc) ON CHARACTERISTICS 15 5.0 − − − − 60 − Collector−Emitter Saturation Voltage (Note 2) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 10 Adc) VCE(sat) Vdc 1.0 5.0 2.0 2.0 − Base−Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) Base−Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc) VBE(sat) VBE(on) fT Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2.0 − − MHz pF 2N5684 2N5686 Cob hfe 2000 1200 − Small−Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. Note 2: Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. VCC RL +2.0 V 0 RB tr ≤ 20 ns −12 V 10 to 100 μs DUTY CYCLE ≈ 2.0% +10 V 0 RB −12 V tr ≤ 20 ns 10 to 100 μs VCC RL TO SCOPE tr ≤ 20 ns −30 V TO SCOPE tr ≤ 20 ns −30 V 15 1.0 0.7 0.5 0.3 0.2 tr td 0.1 0.07 0.05 0.03 0.02 TJ = 25°C IC/IB = 10 VCC = 30 V 2N5684 (PNP) 2N5686 (NPN) VBB +4.0 V 0.01 0.5 0.7 1.0 DUTY CYCLE ≈ 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 Figure 3. Turn−On Time Figure 2. Switching Time Test Circuit http://onsemi.com 2 2N5684 2N5686 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE D = 0.5 0.2 P(pk) θJC(t) = r(t) θJC θJC = 0.584°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response 100 IC, COLLECTOR CURRENT (AMP) 50 20 10 dc 500 μs 5.0 ms 1.0 ms 100 μs 5.0 2.0 1.0 0.5 0.2 0.1 1.0 TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5684, 2N5686 2.0 3.0 20 30 50 70 100 5.0 7.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active−Region Safe Operating Area 4.0 3.0 2.0 t, TIME ( μs) ts 1.0 0.8 0.6 0.4 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 tf 2N5684 (PNP) 2N5686 (NPN) TJ = 25°C IB1 = IB2 IC/IB = 10 VCE = 30 V 5000 TJ = 25°C 3000 C, CAPACITANCE (pF) 2000 Cib Cib 2N5684 (PNP) 2N5686 (NPN) 0.2 Cob 1000 700 500 0.1 Cob 50 100 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn−Off Time Figure 7. Capacitance http://onsemi.com 3 2N5684 2N5686 PNP 2N5684 500 300 200 100 70 50 30 20 10 7.0 5.0 0.5 0.7 1.0 TJ = +150°C +25 °C VCE = 2.0 V VCE = 10 V 500 300 200 100 70 50 30 20 −55 °C TJ = +150°C +25 °C VCE = 2.0 V VCE = 10 V NPN 2N5686 hFE , DC CURRENT GAIN −55 °C 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 hFE , DC CURRENT GAIN 10 7.0 5.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 Figure 8. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25°C 40 A 1.6 IC = 10 A 25 A VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25°C IC = 10 A 25 A 40 A 1.6 1.2 1.2 0.8 0.8 0.4 0.4 0 0.1 0.2 0.5 1.0 2.0 3.0 IB, BASE CURRENT (AMP) 5.0 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IB, BASE CURRENT (AMP) 5.0 10 Figure 9. Collector Saturation Region 2.5 TJ = 25°C 2.0 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 TJ = 25°C 1.6 1.5 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 1.0 0.8 0.5 0.4 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 4 2N5684 2N5686 PACKAGE DIMENSIONS CASE 197A−05 TO−204AE ISSUE J A N C E D U 2 2 PL −T− K M SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 0.30 (0.012) V H L G 1 TQ M Y M −Y− B −Q− 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 2N5684 2N5686 Notes http://onsemi.com 6 2N5684 2N5686 Notes ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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