2N6111G

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. www.onsemi.com Features • • • • 7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 − 50 − 70 VOLTS, 40 WATTS High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Symbol Value Unit VCEO 30 50 70 VCB Emitter−Base Voltage VEB 5.0 Vdc IC 7.0 Adc ICM 10 Adc Base Current IB 3.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 W W/°C −65 to +150 °C Collector Current − Peak Operating and Storage Junction Temperature Range COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE Vdc 40 60 80 TJ, Tstg NPN Vdc Collector−Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Current − Continuous PNP EMITTER 3 EMITTER 3 4 TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2N6xxxG AYWW THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.125 _C/W 2N6xxx xxx G A Y WW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 11 1 = Specific Device Code = See Table on Page 4 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: 2N6107/D 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Vdc 30 50 70 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) 2N6111, 2N6288 (VCE = 40 Vdc, IB = 0) 2N6109 (VCE = 60 Vdc, IB = 0) 2N6107, 2N6292 ICEO Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N6111, 2N6288 (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6109 (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6107, 2N6292 (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6111, 2N6288 (VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6109 (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6107, 2N6292 ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − − − mAdc − 1.0 − 1.0 − 1.0 − 100 − 100 − 100 − 2.0 − 2.0 − 2.0 − 1.0 mAdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292 (IC = 2.5 Adc, VCE = 4.0 Vdc) 2N6109 (IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6111, 2N6288 (IC = 7.0 Adc, VCE = 4.0 Vdc) All Devices hFE Collector−Emitter Saturation Voltage (IC = 7.0 Adc, IB = 3.0 Adc) VCE(sat) Base−Emitter On Voltage (IC = 7.0 Adc, VCE = 4.0 Vdc) VBE(on) − 30 150 30 150 30 150 2.3 − − 3.5 − 3.0 Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 4) (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 2N6292 2N6107, 2N6109, 2N6111 fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob Small−Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) hfe MHz 4.0 10 − − − 250 20 − pF − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 4. fT = |hfe| • ftest http://onsemi.com 2 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 1. Power Derating VCC +30 V 2.0 TJ = 25°C VCC = 30 V IC/IB = 10 1.0 25 ms RC +11 V 0.7 0.5 SCOPE t, TIME (s) μ RB 0 D1 51 -9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.3 0.2 tr 0.1 0.07 0.05 -4 V RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS td @ VBE(off) ≈ 5.0 V 0.03 0.02 0.07 0.1 D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 1.0 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 5.0 7.0 Figure 3. Turn−On Time D = 0.5 0.2 0.1 ZqJC(t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 3.0 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 4. Thermal Response http://onsemi.com 3 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k IC, COLLECTOR CURRENT (AMPS) 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) 15 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 ms 0.5 ms 7.0 5.0 dc 3.0 2.0 0.1 ms CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) 1.0 0.7 0.5 0.3 0.2 0.15 1.0 5.0 ms 2.0 3.0 20 30 50 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active−Region Safe Operating Area 300 5.0 t, TIME (s) μ 2.0 ts 1.0 0.7 0.5 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 tr 0.3 0.2 TJ = 25°C Cib 100 70 Cob 50 0.1 0.07 0.05 0.07 0.1 0.2 1.0 0.3 0.5 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 30 0.5 5.0 7.0 1.0 Figure 6. Turn−Off Time 10 20 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance ORDERING INFORMATION Device Device Marking Package Shipping 2N6107G 2N6107 TO−220 (Pb−Free) 50 Units / Rail 2N6109G 2N6109 TO−220 (Pb−Free) 50 Units / Rail 2N6111G 2N6111 TO−220 (Pb−Free) 50 Units / Rail 2N6288G 2N6288 TO−220 (Pb−Free) 50 Units / Rail 2N6292G 2N6292 TO−220 (Pb−Free) 50 Units / Rail http://onsemi.com 4 30 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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