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AX5031-1-TW30

AX5031-1-TW30

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VFQFN20_EP

  • 描述:

    ICTRANSMITTERRF20QFN

  • 数据手册
  • 价格&库存
AX5031-1-TW30 数据手册
AX5031 Advanced Multi-channel Single Chip UHF Transmitter OVERVIEW The AX5031 is a true single chip low−power CMOS transmitter primarily for use in SRD bands. The on−chip transmitter consists of a fully integrated RF front−end with modulator, and demodulator. Base band data processing is implemented in an advanced and flexible communication controller that enables user friendly communication via the SPI interface. AX5031 can be operated from a 2.2 V to 3.6 V power supply over a temperature range of −40°C to 85°C, it consumes 11 − 45 mA for transmitting, depending on the output power. www.onsemi.com 1 QFN20 4x4, 0.5P CASE 485BH Features • Advanced Multi−channel Single Chip UHF Transmitter • Configurable for Usage in 400−470 MHz and 800−940 MHz • • • • • • • • • • • • • • • • • • • • ORDERING INFORMATION Device Type Qty ISM Bands 500 AX5031−1−TA05 Tape & Reel −5 dBm to +15 dBm Programmable Output AX5031−1−TW30 Tape & Reel 3,000 13 mA @ 0 dBm, 868 MHz 22 mA @ 10 dBm, 868 MHz 44 mA @ 15 dBm, 868 MHz Wide Variety of Shaped Modulations Supported (ASK, PSK, OQPSK, MSK, FSK, GFSK, 4−FSK) Data Rates from 1 to 350 kbps (FSK, MSK, GFSK, • Optional Spectral Shaping Using a Self Synchronizing 4−FSK), 1 to 2000 kbps (ASK), 10 to 2000 kbps (PSK) Shift Register Ultra Fast Settling RF Frequency Synthesizer for • Brown−out Detection Low−power Consumption • Differential Antenna Pins 802.15.4 Compatible • Dual Frequency Registers RF Carrier Frequency and FSK Deviation • Internally Generated Coding for Forward Viterbi Error Programmable in 1 Hz Steps Correction Fully Integrated RF Frequency Synthesizer with VCO • Software Compatible to AX5051 Auto−ranging and Bandwidth Boost Modes for Fast Applications Locking • Telemetry Few External Components • Sensor Readout, Thermostats On Chip Communication Controller and Flexible • AMR Digital Modulator • Toys Channel Hopping 2000 hops/s • Wireless Audio Crystal Oscillator with Programmable Transconductance and Programmable Internal Tuning • Wireless Networks Capacitors for Low Cost Crystals • Wireless M−Bus SPI Micro−controller Interface • Access Control QFN20 Package • Remote Keyless Entry Supply Voltage Range 2.2 V − 3.6 V • Remote Controls Internal Power−on−reset • Active RFID 32 Byte Data FIFO • Compatible with FCC Part 15.247, FCC Part 15.249, Programmable Cyclic Redundancy Check EN 300 220 Wideband, Wireless M−Bus S/T−Mode, (CRC−CCITT, CRC−16, CRC−32) Konnex RF, ARIB T−67 © Semiconductor Components Industries, LLC, 2016 April, 2016 − Rev. 3 1 Publication Order Number: AX5031/D AX5031 BLOCK DIAGRAM Figure 1. Functional Block Diagram of the AX5031 www.onsemi.com 2 AX5031 PIN FUNCTION DESCRIPTIONS Table 1. PIN LIST Symbol Pin(s) Type VDD 1 P Power supply, must be supplied with regulated voltage VREG ANTP 2 A Antenna output ANTN 3 A Antenna output VDD 4 P Power supply, must be supplied with regulated voltage VREG NC 5 N Not connected NC 6 N Not connected SYSCLK 7 I/O SEL 8 I Serial peripheral interface select CLK 9 I Serial peripheral interface clock MISO 10 O Serial peripheral interface data output NC 11 N Not connected MOSI 12 I Serial peripheral interface data input NC 13 N Not connected IRQ 14 I/O VDD_IO 15 P Unregulated power supply NC 16 N Not connected VREG 17 P Regulated output voltage VDD pins must be connected to this supply voltage. A 1 mF low ESR capacitor to GND must be connected to this pin. NC 18 P Not to be connected CLK16P 19 A Crystal oscillator input/output CLK16N 20 A Crystal oscillator input/output Center pad P Ground on center pad of QFN GND Description Default functionality: Crystal oscillator (or divided) clock output Can be programmed to be used as a general purpose I/O pin. Default functionality: Interrupt Can be programmed to be used as a general purpose I/O pin. All digital inputs are Schmitt trigger inputs, digital input and output levels are LVCMOS/LVTTL compatible and 5 V tolerant. A = analog input I = digital input signal O = digital output signal I/O = digital input/output signal N = not to be connected P = power or ground www.onsemi.com 3 AX5031 VDD 1 CLK16N CLK16P NC VREG NC Pinout Drawing 20 19 18 17 16 15 VDD_IO 14 IRQ 13 NC 4 12 MOSI 5 11 NC 6 7 8 9 10 CLK NC MISO VDD AX5031 SEL 3 SYSCLK 2 NC ANTP ANTN GND connection is done via the exposed centre pad of the QFN package. Figure 2. Pinout Drawing (Top View) www.onsemi.com 4 AX5031 SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Symbol Description Condition Min Max Units −0.5 5.5 V 100 mA VDD_IO Supply voltage IDD Supply current Ptot Total power consumption 800 mW II1 DC current into any pin except ANTP, ANTN −10 10 mA II2 DC current into pins ANTP, ANTN −100 100 mA IO Output Current 40 mA Via Input voltage ANTP, ANTN pins −0.5 5.5 V Input voltage digital pins −0.5 5.5 V Ves Electrostatic handling −2000 2000 V Tamb Operating temperature HBM −40 85 °C Tstg Storage temperature −65 150 °C Tj Junction Temperature 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics Table 3. SUPPLIES Min Typ Max Units TAMB Symbol Operational ambient temperature Description Condition −40 27 85 °C VDD_IO I/O and voltage regulator supply voltage 2.2 3.0 3.6 V VREG Internally regulated supply voltage Power−down mode PWRMODE = 0x00 All other power modes V 1.7 2.1 2.5 2.8 IPDOWN Power−down current PWRMODE = 0x00 0.25 mA ITX Current consumption TX for maximum power with default matching network at 3.3 V VDD_IO. (Note 1) 868 MHz, 15 dBm 44 mA 433 MHz, 15 dBm 45 TXVARVDD Variation of output power over voltage VDD_IO > 2.5 V, (Note 1) ± 0.5 dB TXVARTEMP Variation of output power over temperature VDD_IO > 2.5 V, (Note 1) ± 0.5 dB 1. The PA voltage is regulated to 2.5 V. For VDD_IO levels in the range of 2.2 V to 2.5 V the output power drops by typically 1 dBm. www.onsemi.com 5 AX5031 Note on current consumption in TX mode To achieve best output power the matching network has to be optimized for the desired output power and frequency. As a rule of thumb a good matching network produces about 50% efficiency with the AX5031 power amplifier although over 90% are theoretically possible. A typical matching network has between 1 dB and 2 dB loss (Ploss). The current consumption can be calculated as I TX[mA] + 1 PA efficiency ǒ 10 P out[dBm])P loss Ǔ B 2.5V ) I [dB] 10 offset Ioffset is about 12 mA for the VCO at 400−470 MHz and 11 mA for 800−940 MHz. The following table shows calculated current consumptions versus output power for Ploss = 1 dB, PAefficiency = 0.5 and Ioffset= 11 mA at 868 MHz. Table 4. Pout [dBm] I [mA] 0 13.0 1 13.2 2 13.6 3 14.0 4 14.5 5 15.1 6 16.0 7 17.0 8 18.3 9 20.0 10 22.0 11 24.6 12 27.96 13 32.1 14 37.3 15 43.8 The AX5031 power amplifier runs from the regulated VDD supply and not directly from the battery. This has the advantage that the current and output power do not vary much over supply voltage and temperature from 2.55 V to 3.6 V supply voltage. Between 2.55 V and 2.2 V a drop of about 1 dB in output power occurs. Table 5. LOGIC Symbol Description Condition Min Typ Max Units Digital Inputs VT+ Schmitt trigger low to high threshold point 1.9 V VT− Schmitt trigger high to low threshold point 1.2 V VIL Input voltage, low VIH Input voltage, high 2.0 IL Input leakage current −10 0.8 V V 10 mA Digital Outputs IOH Output Current, high VOH = 2.4 V 4 mA IOL Output Current, low VOL = 0.4 V 4 mA IOZ Tri−state output leakage current −10 www.onsemi.com 6 10 mA AX5031 AC Characteristics Table 6. CRYSTAL OSCILLATOR Symbol Description Condition Min Typ Max Units 15.5 16 25 MHz fXTAL Crystal frequency Note 1, 3 gmosc Transconductance oscillator XTALOSCGM = 0000 1 XTALOSCGM = 0001 2 XTALOSCGM = 0010 default 3 XTALOSCGM = 0011 4 XTALOSCGM = 0100 5 XTALOSCGM = 0101 6 XTALOSCGM = 0110 6.5 XTALOSCGM = 0111 7 XTALOSCGM = 1000 7.5 XTALOSCGM = 1001 8 XTALOSCGM = 1010 8.5 XTALOSCGM = 1011 9 XTALOSCGM = 1100 9.5 XTALOSCGM = 1101 10 XTALOSCGM = 1110 10.5 XTALOSCGM = 1111 11 XTALCAP = 000000 default 2 XTALCAP = 111111 33 Cosc Programmable tuning capacitors at pins CLK16N and CLK16P Cosc−lsb Programmable tuning capacitors, increment per LSB of XTALCAP Aosc Oscillator amplitude at pin CLK16P RINosc Input DC impedance mS pF 0.5 Note 2 pF 0.5 10 V kW 1. Tolerances and start−up times depend on the crystal used. 2. If an external clock is used, it should be input via an AC coupling at pin CLK16P with the oscillator powered up and XTALCAP = 000000 3. Lower frequencies than 15.5 MHz or higher frequencies than 25 MHz can be used. However, not all typical RF frequencies can be generated. Table 7. RF FREQUENCY GENERATION SUBSYSTEM (SYNTHESIZER) Symbol Description Condition Min Typ Max fREF Reference frequency Note 1 frange_hi Frequency range BANDSEL = 0 800 940 BANDSEL = 1 400 470 frange_low fRESO Frequency resolution BW1 Synthesizer loop bandwidth 16, 24 1 100 BW2 Loop filter configuration: FLT = 01 Charge pump current: PLLCPI = 001 50 BW3 Loop filter configuration: FLT = 11 Charge pump current: PLLCPI = 010 200 BW4 Loop filter configuration: FLT = 10 Charge pump current: PLLCPI = 010 500 7 MHz MHz Hz Loop filter configuration: FLT = 01 Charge pump current: PLLCPI = 010 www.onsemi.com Units kHz AX5031 Table 7. RF FREQUENCY GENERATION SUBSYSTEM (SYNTHESIZER) Symbol Tset1 Description Synthesizer settling time for 1 MHz step Condition Min Typ Loop filter configuration: FLT = 01 Charge pump current: PLLCPI = 010 15 Tset2 Loop filter configuration: FLT = 01 Charge pump current: PLLCPI = 001 30 Tset3 Loop filter configuration: FLT = 11 Charge pump current: PLLCPI = 010 7 Tset4 Loop filter configuration: FLT = 10 Charge pump current: PLLCPI = 010 3 Loop filter configuration: FLT = 01 Charge pump current: PLLCPI = 010 25 Loop filter configuration: FLT = 01 Charge pump current: PLLCPI = 001 50 Tstart3 Loop filter configuration: FLT = 11 Charge pump current: PLLCPI = 010 12 Tstart4 Loop filter configuration: FLT = 10 Charge pump current: PLLCPI = 010 5 Tstart1 Tstart2 PN8681 Synthesizer start−up time if crystal oscillator and reference are running Synthesizer phase noise Loop filter configuration: FLT = 01 Charge pump current: PLLCPI = 010 PN4331 PN8682 PN4332 Synthesizer phase noise Loop filter configuration: FLT = 01 Charge pump current: PLLCPI = 001 868 MHz, 50 kHz from carrier −85 868 MHz, 100 kHz from carrier −90 868 MHz, 300 kHz from carrier −100 868 MHz, 2 MHz from carrier −110 433 MHz, 50 kHz from carrier −90 433 MHz, 100 kHz from carrier −95 433 MHz, 300 kHz from carrier −105 433 MHz, 2 MHz from carrier −115 868 MHz, 50 kHz from carrier −80 868 MHz, 100 kHz from carrier −90 868 MHz, 300 kHz from carrier −105 868 MHz, 2 MHz from carrier −115 433 MHz, 50 kHz from carrier −90 433 MHz, 100 kHz from carrier −95 433 MHz, 300 kHz from carrier −110 433 MHz, 2 MHz from carrier −122 1. ASK, PSK and 1−200 kbps FSK with 16 MHz crystal, 200−350 kbps FSK with 24 MHz crystal. www.onsemi.com 8 Max Units ms ms dBc/Hz dBc/Hz AX5031 Table 8. TRANSMITTER Symbol SBR PTX868 PTX433 Description Signal bit rate Transmitter power @ 868 MHz Transmitter power @ 433 MHz 2nd PTX868−harm2 Emission @ PTX868−harm3 Emission @ 3rd harmonic harmonic Max Units ASK Condition Min 1 Typ 2000 kbps FSK, (Note 2) 1 350 PSK 10 2000 802.15.4 (DSSS) ASK and PSK 1 40 802.15.4 (DSSS) FSK 1 16 TXRNG = 0000 −45 TXRNG = 0001 −5 TXRNG = 0010 0.4 TXRNG = 0011 4 TXRNG = 0100 6.2 TXRNG = 0101 8 TXRNG = 0110 9.3 TXRNG = 0111 10.3 TXRNG = 1000 11.2 TXRNG = 1001 11.9 TXRNG = 1010 12.5 dBm TXRNG = 1011 13 TXRNG = 1100 13.5 TXRNG = 1101 13.8 TXRNG = 1110 14 TXRNG = 1111 14.5 TXRNG = 1111 15.5 dBm (Note 1) −50 dBc −55 1. Additional low−pass filtering was applied to the antenna interface, see section Application Information. 2. 1 − 200 kbps with 16 MHz crystal, 200 − 350 kbps with 24 MHz crystal Table 9. SPI TIMING Symbol Description Condition Min Typ Max Units Tss SEL falling edge to CLK rising edge 10 ns Tsh CLK falling edge to SEL rising edge 10 ns Tssd SEL falling edge to MISO driving 0 10 ns Tssz SEL rising edge to MISO high−Z 0 10 ns Ts MOSI setup time 10 ns Th MOSI hold time 10 ns Tco CLK falling edge to MISO output Tck CLK period Tcl Tch 10 Note 1 ns 50 ns CLK low duration 40 ns CLK high duration 40 ns 1. For SPI access during power−down mode the period should be relaxed to 100 ns. For a figure showing the SPI timing parameters see section Serial Peripheral Interface (SPI). www.onsemi.com 9 AX5031 CIRCUIT DESCRIPTION to typically 2.5 V. At device power−up the regulator is in power−down mode. The voltage regulator must be powered−up before transmit operations can be initiated. This is handled automatically when programming the device modes via the PWRMODE register. Register VREG contains status bits that can be read to check if the regulated voltage is above 1.3 V or 2.3 V, sticky versions of the bits are provided that can be used to detect low power events (brown−out detection). The AX5031 is a true single chip low−power CMOS transmitter primarily for use in SRD bands. The on−chip transmitter consists of a fully integrated RF front−end with modulator, and demodulator. Base band data processing is implemented in an advanced and flexible communication controller that enables user friendly communication via the SPI interface. AX5031 can be operated from a 2.2 V to 3.6 V power supply over a temperature range of −40°C to 85°C, it consumes 11 − 45 mA for transmitting, depending on the output power. The AX5031 features make it an ideal interface for integration into various battery powered SRD solutions such as ticketing or as transmitter for telemetric applications e.g. in sensors. As primary application, the transmitter is intended for UHF radio equipment in accordance with the European Telecommunication Standard Institute (ETSI) specification EN 300 220−1 and the US Federal Communications Commission (FCC) standard CFR47, part 15. The use of AX5031 in accordance to FCC Par 15.247, allows for improved range in the 915 MHz band. Additionally AX5031 is compatible with the low frequency standards of 802.15.4 (ZigBee). The AX5031 receives data via the SPI port in frames. This standard operation mode is called Frame Mode. Pre and post ambles as well as checksums can be generated automatically. Interrupts control the data flow between a controller and the AX5031. The AX5031 behaves as a SPI slave interface. Configuration of the AX5031 is also done via the SPI interface. AX5031 supports any data rate from 1 kbps to 350 kbps for FSK and MSK, from 1 kbps to 2000 kbps for ASK and from 10 kbps to 2000 kbps for PSK. To achieve optimum performance for specific data rates and modulation schemes several register settings to configure the AX5031 are necessary, they are outlined in the following, for details see the AX5031 Programming Manual. Spreading is possible on all data rates and modulation schemes. The net transfer rate is reduced by a factor of 15 in this case. For ZigBee either 600 or 300 kbps modes have to be chosen. Crystal Oscillator The on−chip crystal oscillator allows the use of an inexpensive quartz crystal as the RF generation subsystem’s timing reference. Although a wider range of crystal frequencies can be handled by the crystal oscillator circuit, it is recommended to use 16 MHz as reference frequency for ASK and PSK modulations independent of the data rate. For FSK it is recommended to use a 16 MHz crystal for data rates below 200 kbps and 24 MHz for data rates above 200 kbps. The oscillator circuit is enabled by programming the PWRMODE register. At power−up it is not enabled. To adjust the circuit’s characteristics to the quartz crystal being used without using additional external components, both the transconductance and the tuning capacitance of the crystal oscillator can be programmed. The transconductance is programmed via register bits XTALOSCGM[3:0] in register XTALOSC. The integrated programmable tuning capacitor bank makes it possible to connect the oscillator directly to pins CLK16N and CLK16P without the need for external capacitors. It is programmed using bits XTALCAP[5:0] in register XTALCAP. SYSCLK Output The SYSCLK pin outputs the reference clock signal divided by a programmable integer. Divisions from 1 to 2048 are possible. For divider ratios > 1 the duty cycle is 50%. Bits SYSCLK[3:0] in the PINCFG1 register set the divider ratio. The SYSCLK output can be disabled. Power−on−reset (POR) AX5031 has an integrated power−on−reset block. No external POR circuit or signal is required. After POR the AX5031 can be reset by SPI accesses, this is achieved by toggling the bit RST in the PWRMODE register. After POR or reset all registers are set to their default values. Voltage Regulator The AX5031 uses an on−chip voltage regulator to create a stable supply voltage for the internal circuitry at pin VREG from the primary supply VDD_IO. All VDD pins of the device must be connected to VREG. The antenna pins ANTP and ANTN must be DC biased to VREG. The I/O level of the digital pins is VDD_IO. The voltage regulator requires a 1 mF low ESR capacitor at pin VREG. In power−down mode the voltage regulator typically outputs 1.7 V at VREG, if it is powered−up its output rises RF Frequency Generation Subsystem The RF frequency generation subsystem consists of a fully integrated synthesizer, which multiplies the reference frequency from the crystal oscillator to get the desired RF frequency. The advanced architecture of the synthesizer www.onsemi.com 10 AX5031 be set. For operation in the 433 MHz band, the BANDSEL bit in the PLLLOOP register must be programmed. enables frequency resolutions of 1 Hz, as well as fast settling times of 5 – 50 ms depending on the settings (see section: AC Characteristics). Fast settling times mean fast start−up, which enables low−power system design. The frequency must be programmed to the desired carrier frequency. The synthesizer loop bandwidth can be programmed, this serves three purposes: 1. Start−up time optimization, start−up is faster for higher synthesizer loop bandwidths. 2. TX spectrum optimization, phase−noise at 300 kHz to 1 MHz distance from the carrier improves with lower synthesizer loop bandwidths. 3. Adaptation of the bandwidth to the data−rate. For transmission of FSK and MSK it is required that the synthesizer bandwidth must be in the order of the data−rate. VCO Auto−Ranging The AX5031 has an integrated auto−ranging function, which allows to set the correct VCO range for specific frequency generation subsystem settings automatically. Typically it has to be executed after power−up. The function is initiated by setting the RNG_START bit in the PLLRANGING register. The bit is readable and a 0 indicates the end of the ranging process. The RNGERR bit indicates the correct execution of the auto−ranging. Loop Filter and Charge Pump The AX5031 internal loop filter configuration together with the charge pump current sets the synthesizer loop band width. The loop−filter has three configurations that can be programmed via the register bits FLT[1:0] in register PLLLOOP, the charge pump current can be programmed using register bits PLLCPI[1:0] also in register PLLLOOP. Synthesizer bandwidths are typically 50 – 500 kHz depending on the PLLLOOP settings, for details see the section: AC Characteristics. VCO An on−chip VCO converts the control voltage generated by the charge pump and loop filter into an output frequency. The frequency can be programmed in 1 Hz steps in the FREQ or FREQB registers. To chose FREQB setting rather than FREQ, the bit FREQSEL in register PLLLOOP must Registers Table 10. REGISTERS Register PLLLOOP Bits Purpose FREQSEL Switches between carrier frequencies defined by FREQ and FREQB. Using this feature allows to avoid glitches in the PLL output frequency caused by serially changing the 4 bytes required to set a carrier frequency. FLT[1:0] Synthesizer loop filter bandwidth, recommended usage is to increase the bandwidth for faster settling time, bandwidth increases of factor 2 and 5 are possible. PLLCPI[2:0] Synthesizer charge pump current, recommended usage is to decrease the bandwidth (and improve the phase−noise) for low data−rate transmissions. BANDSEL Switches between 868 MHz / 915 MHz and 433 MHz bands FREQ Programming of the carrier frequency FREQB Programming of the 2nd carrier frequency, switch to this carrier frequency by setting bit FREQSEL = 1. PLLRANGING Initiate VCO auto−ranging and check results • It can perform differential encoding. This means that a RF Output Stage (ANTP/ANTN) The AX5031 uses fully differential antenna pins. The PA drives the signal generated by the frequency generation subsystem out to the differential antenna terminals. The output power of the PA is programmed via bits TXRNG[3:0] in the register TXPWR. Output power as well as harmonic content will depend on the external impedance seen by the PA, recommendations are given in the section Application Information. • Encoder The encoder is located between the Framing Unit and the Modulator. It can optionally transform the bit−stream in the following ways: • It can invert the bit stream. zero is transmitted as no change in the level, and a one is transmitted as a change in the level. Differential encoding is useful for PSK, because PSK transmissions can be received either as transmitted or inverted, due to the uncertainty of the initial phase. Differential encoding / decoding removes this uncertainty. It can perform Manchester encoding. Manchester encoding ensures that the modulation has no DC content and enough transitions (changes from 0 to 1 and from 1 to 0) for the demodulator bit timing recovery to function correctly, but does so at a doubling of the data rate. www.onsemi.com 11 AX5031 • It can perform Spectral Shaping. Spectral Shaping the result of CRC checks. The FIFO can be written in power−down mode. The FIFO can be operated in polled or interrupt driven modes. In polled mode, the micro−controller must periodically read the FIFO status register or the FIFO count register to determine whether the FIFO needs servicing. In interrupt mode EMPTY, NOT EMPTY, FULL, NOT FULL and programmable level interrupts are provided. The AX5031 signals interrupts by asserting (driving high) its IRQ line. The interrupt line is level triggered, active high. Interrupts are acknowledged by removing the cause for the interrupt, i.e. by emptying or filling the FIFO. Basic FIFO status (EMPTY, FULL, Overrun, Underrun, and the top two bits of the top FIFO word) are also provided during each SPI access on MISO while the micro−controller shifts out the register address on MOSI. See the SPI interface section for details. This feature significantly reduces the number of SPI accesses necessary. removes DC content of the bit stream, ensures transitions for the demodulator bit timing recovery, and makes sure that the transmitted spectrum does not have discrete lines even if the transmitted data is cyclic. It does so without adding additional bits, i.e. without changing the data rate. Spectral Shaping uses a self synchronizing feedback shift register. The encoder is programmed using the register ENCODING, details and recommendations on usage are given in the AX5031 Programming Manual. Framing and FIFO Most radio systems today group data into packets. The framing unit is responsible for converting these packets into a bit−stream suitable for the modulator. The Framing unit supports three different modes: • HDLC • Raw • 802.15.4 compliant HDLC Mode NOTE: HDLC mode follows High−Level Data Link Control (HDLC, ISO 13239) protocol. HDLC Mode is the main framing mode of the AX5031. In this mode, the AX5031 performs automatic packet delimiting, and optional packet correctness check by inserting and checking a cyclic redundancy check (CRC) field. The packet structure is given in the following table. The micro−controller communicates with the framing unit through a 32 level y 10 bit FIFO. The FIFO decouples micro−controller timing from the radio (modulator) timing. The bottom 8 bits of the FIFO contain transmit data. The top 2 bit are used to convey meta information in HDLC and 802.15.4 modes. They are unused in Raw mode. The meta information consists of packet begin / end information and Table 11. Flag Address Control Information FCS (Optional Flag) 8 bit 8 bit 8 or 16 bit Variable length, 0 or more bits in multiples of 8 16 / 32 bit 8 bit HDLC packets are delimited with flag sequences of content 0x7E. In AX5031 the meaning of address and control is user defined. The Frame Check Sequence (FCS) can be programmed to be CRC−CCITT, CRC−16 or CRC−32. For details on implementing a HDLC communication see the AX5031 Programming Manual. 802.15.4 (ZigBee) 802.15.4 uses binary phase shift keying (PSK) with 300 kbit/s (868 MHz band) or 600 kbit/s (915 MHz band) on the radio. The usable bit rate is only a 15th of the radio bit rate, however. A spreading function in the transmitter expands the user bit rate by a factor of 15, to make the transmission more robust. In 802.15.4 mode, the AX5031 framing unit performs the spreading according to the 802.15.4 specification. The 802.15.4 is a universal DSSS mode, which can be used with any modulation or data rate as long as it does not violate the maximum data rate of the modulation being used. Therefore the maximum DSSS data rate is 16 kbps for FSK and 40 kbps for ASK and PSK. Raw Mode In Raw mode, the AX5031 does not perform any packet delimiting or byte synchronization. It simply serialises transmit bytes. This mode is ideal for implementing legacy protocols in software. www.onsemi.com 12 AX5031 Modulator Depending on the transmitter settings the modulator generates various inputs for the PA: Table 12. Modulation Bit = 0 Bit = 1 Main Lobe Bandwidth Max. Bitrate ASK PA off PA on BW = BITRATE 2000 kBit/s FSK/MSK/GFSK Df = −fdeviation Df = +fdeviation BW = (1 + h) ⋅BITRATE 350 kBit/s PSK DF = 0° DF = 180° BW = BITRATE 2000 kBit/s h PSK = phase shift keying OQPSK = offset quadrature shift keying. The AX5031 supports OQPSK. However, unless compatibility to an existing system is required, MSK should be preferred. 4−FSK = four frequencies are used to transmit two bits simultaneously during each symbol = modulation index. It is the ratio of the deviation compared to the bit−rate; fdeviation = 0.5⋅h⋅BITRATE = amplitude shift keying = frequency shift keying = minimum shift keying; MSK is a special case of FSK, where h = 0.5, and therefore fdeviation = 0.25⋅BITRATE; the advantage of MSK over FSK is that it can be demodulated more robustly. ASK FSK MSK Table 13. Modulation Symbol = 00 Symbol = 01 Symbol = 10 Symbol = 11 Max. Bitrate 4−FSK Df = −3⋅fdeviation Df = −fdeviation Df = +fdeviation Df = +3⋅fdeviation 400 kBit/s All modulation schemes are binary. PWRMODE Register The PWRMODE register controls, which parts of the chip are operating. Table 14. PWRMODE REGISTER PWRMODE Register Name Description Typical Idd 0000 POWERDOWN All digital and analog functions, except the register file, are disabled. The core supply voltage is reduced to conserve leakage power. SPI registers are still accessible, but at a slower speed. FIFO access is possible. 0.25 mA 0100 VREGON All digital and analog functions, except the register file, are disabled. The core voltage, however is at its nominal value for operation, and all SPI registers are accessible at the maximum speed. 140 mA 0101 STANDBY The crystal oscillator is powered on; the transmitter is off. 500 mA 1100 SYNTHTX The synthesizer is running on the transmit frequency. The transmitter is still off. This mode is used to let the synthesizer settle on the correct frequency for transmit. 10 mA 1101 FULLTX Synthesizer and transmitter are running. Do not switch into this mode before the synthesizer has completely settled on the transmit frequency (in SYNTHTX mode), otherwise spurious spectral transmissions will occur. 11 − 45 mA Table 15. A TYPICAL PWRMODE SEQUENCE FOR A TRANSMIT SESSION Step PWRMODE Remarks 1 POWERDOWN 2 STANDBY The settling time is dominated by the crystal used, typical value 3 ms. 4 SYNTHTX The synthesizer settling time is 5 – 50 ms depending on settings, see section AC Characteristics 3 FULLTX Data transmission 4 POWERDOWN www.onsemi.com 13 AX5031 Serial Peripheral Interface Figure 6 shows a write/read access to the interface. The data stream is built of an address byte including read/write information and a data byte. Depending on the R_N/W bit and address bits A[6..0], data D[7..0] can be written via MOSI or read at the pin MISO. R_N/W = 0 means read mode, R_N/W = 1 means write mode. The read sequence starts with 7 bits of status information S[6..0] followed by 8 data bits. The status bits contain the following information: The AX5031 can be programmed via a four wire serial interface according SPI using the pins CLK, MOSI, MISO and SEL. Registers for setting up the AX5031 are programmed via the serial peripheral interface in all device modes. When the interface signal SEL is pulled low, a 16 bit configuration data stream is expected on the input signal pin MOSI, which is interpreted as D0...D7, A0...A6, R_N/W. Data read from the interface appears on MISO. Table 16. S6 S5 S4 S3 S2 S1 S0 PLL LOCK FIFO OVER FIFO UNDER FIFO FULL FIFO EMPTY FIFOSTAT(1) FIFOSTAT(0) SPI Timing Tss Tck TchTcl Tsh Ts Th SS SCK MOSI R/ W MISO Tssd A6 A5 A4 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 S6 S5 S4 S3 S2 S1 S0 D7 D6 D5 D4 D3 D2 D1 D0 Tco Tssz Figure 3. Serial Peripheral Interface Timing www.onsemi.com 14 AX5031 REGISTER BANK DESCRIPTION This section describes the bits of the register bank in detail. The registers are grouped by functional block to facilitate programming. No checks are made whether the programmed combination of bits makes sense! Bit 0 is always the LSB. NOTES: Whole registers or register bits marked as reserved should be kept at their default values. All addresses not documented here must not be accessed, neither in reading nor in writing. Table 17. CONTROL REGISTER MAP Bit Addr Name Dir 7 Reset 6 5 4 3 2 1 0 Description Revision & Interface Probing 0 REVISION R 00100001 SILICONREV(7:0) Silicon Revision 1 SCRATCH RW 11000101 SCRATCH(7:0) Scratch Register RW 011−0000 RST REFEN XOEN − PWRMODE(3:0) Power Mode RW −−−−0010 − − − − XTALOSCGM(3:0) GM of Crystal Oscillator FIFO OVER FIFO UNDER FIFO FULL Operating Mode 2 PWRMODE Crystal Oscillator, Part 1 3 XTALOSC FIFO, Part 1 4 FIFOCTRL RW −−−−−−11 FIFOSTAT(1:0) FIFO EMPTY FIFOCMD(1:0) FIFO Control 5 FIFODATA RW −−−−−−−− FIFODATA(7:0) FIFO Data Interrupt Control 6 IRQMASK RW −0000000 − IRQMASK(6:0) IRQ Mask 7 IRQREQUEST R −−−−−−−− − IRQREQUEST(6:0) IRQ Request Interface & Pin Control 0C PINCFG1 RW 00101000 − IRQZ − SYSCLK(3:0) 0D PINCFG2 RW 00000000 − IRQE − − 0E PINCFG3 RW 0−−−−−−− reserved − − SYSCLKR − 0F IRQINVERSION RW −0000000 − IRQINVERSION(6:0) Pin Configuration 1 IRQI − Pin Configuration 2 IRQR − Pin Configuration 3 IRQ Inversion Modulation & Framing 10 MODULATION RW −0000010 − MODULATION(6:0) 11 ENCODING RW −−−00010 − − − Modulation 12 FRAMING RW −0000000 − HSUPP CRCMODE(1:0) 14 CRCINIT3 RW 11111111 CRCINIT(31:24) CRC Initialization Data or Preamble 15 CRCINIT2 RW 11111111 CRCINIT(23:16) CRC Initialization Data or Preamble 16 CRCINIT1 RW 11111111 CRCINIT(15:8) CRC Initialization Data or Preamble 17 CRCINIT0 RW 11111111 CRCINIT(7:0) CRC Initialization Data or Preamble R −−−−−−−− − ENC NOSYNC ENC MANCH ENC SCRAM ENC DIFF FRMMODE(2:0) ENC INV Encoder/Decoder Settings − Framing settings Voltage Regulator 1B VREG − − − SSDS SSREG SDS SREG Voltage Regulator Status Synthesizer 1C FREQB3 RW 00111001 FREQB(31:24) 2nd Synthesizer Frequency 1D FREQB2 RW 00110100 FREQB(23:16) 2nd Synthesizer Frequency 1E FREQB1 RW 11001100 FREQB(15:8) 2nd Synthesizer Frequency 1F FREQB0 RW 11001101 FREQB(7:0) 2nd Synthesizer Frequency 20 FREQ3 RW 00111001 FREQ(31:24) Synthesizer Frequency 21 FREQ2 RW 00110100 FREQ(23:16) Synthesizer Frequency www.onsemi.com 15 AX5031 Table 17. CONTROL REGISTER MAP Bit Addr Name 7 6 5 4 3 2 1 0 Dir Reset 22 FREQ1 RW 11001100 FREQ(15:8) Synthesizer Frequency 23 FREQ0 RW 11001101 FREQ(7:0) Synthesizer Frequency 25 FSKDEV2 RW 00000010 FSKDEV(23:16) FSK Frequency Deviation 26 FSKDEV1 RW 01100110 FSKDEV(15:8) FSK Frequency Deviation 27 FSKDEV0 RW 01100110 FSKDEV(7:0) 2C PLLLOOP RW 00011101 FREQS EL reserved BANDSEL PLLCPI(2:0) 2D PLLRANGING RW 00001000 STICKY LOCK PLL LOCK RNGERR – Description FSK Frequency Deviation FLT(1:0) RNG START VCOR(3:0) – TXRNG(3:0) Synthesizer Loop Filter Settings Synthesizer VCO Auto−Ranging Transmitter 30 TXPWR RW −−−−1000 – – Transmit Power 31 TXRATEHI RW 00001001 TXRATE(23:16) Transmitter Bitrate 32 TXRATEMID RW 10011001 TXRATE(15:8) Transmitter Bitrate 33 TXRATELO RW 10011010 TXRATE(7:0) 34 MODMISC RW ––––––11 – – Transmitter Bitrate – – – – reserved PTTLCK Misc RF Flags GATE FIFO, Part 2 35 FIFOCOUNT R −−000000 – – FIFOCOUNT(5:0) FIFO Fill state 36 FIFOTHRESH RW −−000000 – – FIFOTHRESH(5:0) FIFO Threshold 37 FIFOCONTROL RW 2 0−−−−−00 CLEAR – – RW −−000000 – – XTALCAP(5:0) RW −−−−−−−0 – – – – – – STOPONERR (1:0) Additional FIFO control Crystal Oscillator, Part 2 4F XTALCAP Crystal oscillator tuning capacitance 4−FSK Control 50 FOURFSK – www.onsemi.com 16 – – FOURFSKENA 4−FSK Control AX5031 APPLICATION INFORMATION VREG CLK16P CLK16N ANTENNA VDD_IO VDD IRQ MISO CLK VDD SEL GND MOSI ANTN SYSCLK VREG AX5031 ANTP TO/FROM MICRO−CONTROLLER 1 mF From Power Supply Typical Application Diagram Figure 4. Typical Application Diagram recommended to add 100 nF decoupling capacitor for every VDD and VDD_IO pin. In order to reduce noise on the antenna inputs it is recommended to add 27 pF on the VDD pins close to the antenna interface. The GND connection to AX5031 is made via the exposed center pad of the QFN package. It is mandatory to connect this pad to GND. It is mandatory to add 1 mF (low ESR) between VREG and GND. Decoupling capacitors are not all drawn. It is www.onsemi.com 17 AX5031 Antenna Interface Circuitry A small antenna can be directly connected to the AX5031 ANTP and ANTN pins with an optional translation network. The network must provide DC power to the PA. A biasing to VREG is necessary. Beside biasing and impedance matching, the proposed network also provides low pass filtering to limit spurious emission. Single−ended Antenna Interface VREG LC1 CC1 CB1 CM1 LT1 CT1 LB2 LF1 CF1 IC Antenna Pins LT2 LC2 CT2 CC2 CF2 50 W single−ended equipment or antenna CB2 CM2 LB1 Optional filter stage to suppress TX harmonics VREG Figure 5. Structure of the Antenna Interface to 50 W Single−ended Equipment or Antenna Table 18. Frequency Band LC1,2 [nH] CC1,2 [pF] LT1,2 [nH] CT1,2 [pF] CM1,2 [pF] LB1,2 [nH] CB1,2 [pF] LF1 [nH] CF1,2 [pF] 868 / 915 MHz 68 1.2 12 18 2.4 12 2.7 0W NC 433 MHz 120 2.7 39 7.5 6.0 27 5.2 0W NC Voltage Regulator The AX5031 has an integrated voltage regulator which generates a stable supply voltage VREG from the voltage applied at VDD_IO. Use VREG to supply all the VDD supply pins. www.onsemi.com 18 AX5031 QFN Soldering Profile Preheat Reflow Cooling tP TP Temperature TL tL TsMAX TsMIN ts 25°C T25°C to Peak Time Figure 6. QFN Soldering Profile Table 19. Profile Feature Pb−Free Process Average Ramp−Up Rate 3°C/s max. Preheat Preheat Temperature Min TsMIN 150°C Temperature Max TsMAX 200°C Time (TsMIN to TsMAX) ts 60 – 180 sec Time 25°C to Peak Temperature T25°C to Peak 8 min max. Liquidus Temperature TL 217°C Time over Liquidus Temperature tL 60 – 150 s Peak Temperature tp 260°C Time within 5°C of actual Peak Temperature Tp 20 – 40 s Reflow Phase Cooling Phase Ramp−down rate 6°C/s max. 1. All temperatures refer to the top side of the package, measured on the the package body surface. www.onsemi.com 19 AX5031 QFN Recommended Pad Layout 1. PCB land and solder masking recommendations are shown in Figure 7. A = Clearance from PCB thermal pad to solder mask opening, 0.0635 mm minimum B = Clearance from edge of PCB thermal pad to PCB land, 0.2 mm minimum C = Clearance from PCB land edge to solder mask opening to be as tight as possible to ensure that some solder mask remains between PCB pads. D = PCB land length = QFN solder pad length + 0.1 mm E = PCB land width = QFN solder pad width + 0.1 mm Figure 7. PCB Land and Solder Mask Recommendations 3. For the PCB thermal pad, solder paste should be printed on the PCB by designing a stencil with an array of smaller openings that sum to 50% of the QFN exposed pad area. Solder paste should be applied through an array of squares (or circles) as shown in Figure 8. 4. The aperture opening for the signal pads should be between 50−80% of the QFN pad area as shown in Figure 9. 5. Optionally, for better solder paste release, the aperture walls should be trapezoidal and the corners rounded. 6. The fine pitch of the IC leads requires accurate alignment of the stencil and the printed circuit board. The stencil and printed circuit assembly should be aligned to within + 1 mil prior to application of the solder paste. 7. No−clean flux is recommended since flux from underneath the thermal pad will be difficult to clean if water−soluble flux is used. 2. Thermal vias should be used on the PCB thermal pad (middle ground pad) to improve thermal conductivity from the device to a copper ground plane area on the reverse side of the printed circuit board. The number of vias depends on the package thermal requirements, as determined by thermal simulation or actual testing. 3. Increasing the number of vias through the printed circuit board will improve the thermal conductivity to the reverse side ground plane and external heat sink. In general, adding more metal through the PC board under the IC will improve operational heat transfer, but will require careful attention to uniform heating of the board during assembly. Assembly Process Stencil Design & Solder Paste Application 1. Stainless steel stencils are recommended for solder paste application. 2. A stencil thickness of 0.125 – 0.150 mm (5 – 6 mils) is recommended for screening. Figure 8. Solder Paste Application on Exposed Pad www.onsemi.com 20 AX5031 Minimum 50% coverage 62% coverage Maximum 80% coverage Figure 9. Solder Paste Application on Pins www.onsemi.com 21 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS QFN20 4x4, 0.5P CASE 485EE ISSUE A DATE 20 NOV 2015 SCALE 2:1 A B D ÉÉÉ ÉÉÉ ÉÉÉ PIN ONE REFERENCE 2X ÇÇ ÉÉ ÉÉ EXPOSED Cu E A3 ÉÉÉ ÇÇÇ ÇÇÇ A1 DETAIL B 0.10 C ALTERNATE CONSTRUCTIONS 2X 0.10 C MOLD CMPD TOP VIEW L L A3 DETAIL B A L1 0.10 C DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS 0.08 C NOTE 4 A1 SIDE VIEW D2 DETAIL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. C 20X 6 DIM A A1 A3 b D D2 E E2 e L L1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.25 0.35 4.00 BSC 2.75 2.85 4.00 BSC 2.75 2.85 0.50 BSC 0.25 0.35 0.00 0.15 GENERIC MARKING DIAGRAM* SEATING PLANE L XXXXXX XXXXXX ALYWG G 11 E2 1 20 20X e XXXXXX= Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package b 0.10 C A B 0.05 C BOTTOM VIEW NOTE 3 SOLDERING FOOTPRINT* 4.30 (Note: Microdot may be in either location) 20X 0.50 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.95 1 2.95 4.30 PKG OUTLINE 20X 0.35 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON04195G QFN20 4X4, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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