BC490

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors Order this document by BC490/D PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER BC490,A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –80 –80 –4.0 –0.5 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO –80 –80 –4.0 — — — — — — — — –100 Vdc Vdc Vdc nAdc ON CHARACTERISTICS* DC Current Gain (IC = –10 mAdc, VCE = –2.0 Vdc) (IC = –100 mAdc, VCE = –2.0 Vdc) (IC = –1.0 Adc, VCE = –5.0 Vdc) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. hFE BC490 BC490A 40 60 100 15 — — 140 — — 400 250 — — Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC490,A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Min Max Unit ON CHARACTERISTICS(1) (Continued) Collector – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) Base – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) VCE(sat) — — VBE(sat) — — –0.9 –1.0 –1.2 — –0.25 –0.5 –0.5 — Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. fT Cob Cib — — — 150 9.0 110 — — — MHz pF pF TURN–ON TIME 5.0 µs +10 V 0 tr = 3.0 ns Vin 5.0 µF –1.0 V 100 RB 100 VCC +40 V RL OUTPUT Vin TURN–OFF TIME +VBB 100 RB 5.0 µF 5.0 µs tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT *CS < 6.0 pF *CS < 6.0 pF Figure 1. Switching Time Test Circuits 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC490,A f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) 200 VCE = –2.0 V TJ = 25°C 100 70 50 C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25°C 10 30 7.0 20 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) –200 5.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS) Cobo –50 –100 Figure 2. Current–Gain — Bandwidth Product Figure 3. Capacitance 1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 ts td @ VBE(off) = –0.5 V VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C tf tr 10 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 IC, COLLECTOR CURRENT (mA) –500 Figure 4. Switching Time r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0 D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–469) TJ(pk) – TC = P(pk) ZθJC(t) TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k ZθJC(t) = r(t) • RθJC ZθJA(t) = r(t) • RθJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k 2.0 5.0 10 Figure 5. Thermal Response Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BC490,A –1.0 k –700 IC, COLLECTOR CURRENT (mA) –500 –300 –200 TA = 25°C –100 –70 –50 –30 –20 –10 –1.0 TC = 25°C 100 µs 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 1.0 s 1.0 ms 0.4 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC490 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 Figure 6. Active Region, Safe Operating Area Figure 7. “On” Voltages VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA RθVB, TEMPERATURE COEFFICIENT (mV/°C) 1.0 –0.8 –1.2 0.6 –1.6 0.4 –2.0 RθVB for VBE –2.4 0.2 0 0.05 0.1 0.2 1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA) 20 50 –2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 500 Figure 8. Collector Saturation Region Figure 9. Base–Emitter Temperature Coefficient 400 TJ = 125°C hFE , DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 –0.5 VCE = –1.0 V –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) –50 –70 –100 –200 –300 –500 Figure 10. DC Current Gain 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC490,A –1.0 TJ = 25°C –0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) –1.0 TJ = 25°C –0.8 –0.6 IC = –10 mA –0.4 –50 mA –100 mA –250 mA –500 mA –0.4 –0.2 VCE(sat) @ IC/IB = 10 0 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 –0.2 0 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA) –10 –20 –50 Figure 11. “On” Voltages Figure 12. Collector Saturation Region RθVB, TEMPERATURE COEFFICIENT (mV/°C) –0.8 –1.2 –1.6 RθVB for VBE –2.0 –2.4 –2.8 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 Figure 13. Base–Emitter Temperature Coefficient Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 BC490,A PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 17: PIN 1. COLLECTOR 2. BASE 3. 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