BC847BDW1T1G

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features SOT−363/SC−88 CASE 419B STYLE 1 • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* Symbol BC846 BC847 BC848 Unit Collector −Emitter Voltage VCEO 65 45 30 V Collector −Base Voltage VCBO 80 50 30 V Emitter −Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current − Continuous (2) Q1 MAXIMUM RATINGS Rating (3) Q2 (4) (5) Characteristic Total Device Dissipation Per Device FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range Symbol Max Unit PD 380 250 mW mW (6) MARKING DIAGRAM 6 1x MG G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (1) 1 1x x M G = Specific Device Code = B, F, G, L = Date Code = Pb−Free Package (Note: Microdot may be in either location) 3.0 RqJA TJ, Tstg mW/°C °C/W 328 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. °C −55 to +150 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 August, 2016 − Rev. 11 1 Publication Order Number: BC846BDW1T1/D BC846BDW1, BC847BDW1, BC848CDW1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) BC846 BC847 BC848 V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC846 BC847 BC848 V(BR)CES Collector −Base Breakdown Voltage (IC = 10 mA) BC846 BC847 BC848 V(BR)CBO Emitter −Base Breakdown Voltage (IE = 1.0 mA) BC846 BC847 BC848 V(BR)EBO V 65 45 30 − − − V 80 50 30 − − − − − − V 80 50 30 Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) − − − − − − − − − V 6.0 6.0 5.0 − − − − − − − − − − 15 5.0 ICBO nA mA ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B BC847C, BC848C (IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B BC847C, BC848C Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) − − − 150 270 − − 200 420 290 520 450 800 − − − − 0.25 0.6 − − 0.7 0.9 − − 580 − 660 − 700 770 100 − − − − 4.5 − − 10 V V mV SMALL− SIGNAL CHARACTERISTICS fT Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) MHz Cobo Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) pF NF dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC846BDW1 600 600 VCE = 10 V 150°C 400 25°C 300 200 −55°C 100 0 0.001 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 500 0.01 0.1 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 1 Figure 1. DC Current Gain at VCE = 5 V Figure 2. DC Current Gain at VCE = 10 V IC/IB = 10 0.20 0.15 150°C 0.10 25°C 0.05 −55°C 0.00 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC/IB = 20 0.25 0.2 0.15 25°C 0.1 0.05 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) IC/IB = 10 −55°C 150°C −55°C 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 4. VCE(sat) at IC/IB = 20 1.10 0.90 1 0.3 Figure 3. VCE(sat) at IC/IB = 10 0.20 0.0001 0.1 IC, COLLECTOR CURRENT (A) 0.25 1.00 0.01 IC, COLLECTOR CURRENT (A) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 5 V 1.10 1.00 IC/IB = 20 0.90 0.80 0.70 −55°C 25°C 0.60 0.50 0.40 150°C 0.30 0.20 0.0001 Figure 5. VBE(sat) at IC/IB = 10 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 6. VBE(sat) at IC/IB = 20 www.onsemi.com 3 0.1 BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC846BDW1 1000 VCE = 5 V 1.10 fT, CURRENT−GAIN − BANDWIDTH PRODUCT VBE(on), BASE−EMITTER VOLTAGE (V) 1.20 1.00 0.90 −55°C 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 0.1 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 7. VBE(on) at VCE = 5 V Figure 8. Current − Gain − Bandwidth Product VCE, COLLECTOR−EMITTER VOLTAGE (V) TA = 25°C Cib C, CAPACITANCE (pF) 100 IC, COLLECTOR CURRENT (A) 10 Cob 1 1 10 100 2 1.6 TA = 25°C IC = 10 mA IC = 20 mA IC = 50 mA IC = 100 mA 1.2 0.8 0.4 0 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 9. Capacitances Figure 10. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) 0.1 VCE = 10 V TA = 25°C −0.2 VCE = 5 V −0.6 −1 −1.4 qVB, for VBE −1.8 −55°C to 150°C −2.2 −2.6 −3 0.1 1 10 IB, BASE CURRENT (mA) 100 Figure 11. Base−Emitter Temperature Coefficient www.onsemi.com 4 100 BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC847BDW1 hFE, DC CURRENT GAIN 150°C 500 400 25°C 300 −55°C 200 100 0 0.0001 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 600 VCE = 5 V 0.25 0.001 0.01 0.1 150°C 500 400 25°C 300 −55°C 200 100 0.001 Figure 12. DC Current Gain at VCE = 5 V Figure 13. DC Current Gain at VCE = 10 V 0.15 0.10 25°C 150°C 0.05 −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 IC/IB = 20 0.25 0.20 0.15 25°C 0.10 0.05 −55°C 0.80 25°C 0.60 150°C 0.40 0.20 0.1 IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) 1.00 0.01 150°C −55°C 0.00 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 15. VCE at IC/IB = 20 IC/IB = 10 0.001 1 0.30 Figure 14. VCE at IC/IB = 10 0.00 0.0001 0.1 IC, COLLECTOR CURRENT (A) 0.20 1.20 0.01 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.00 0.0001 VCE = 10 V 0 0.0001 1 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 1.20 IC/IB = 20 1.00 0.80 −55°C 25°C 0.60 0.40 150°C 0.20 0.00 0.0001 Figure 16. VBE(sat) at IC/IB = 10 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 17. VBE(sat) at IC/IB = 20 www.onsemi.com 5 0.1 BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC847BDW1 1.10 1000 VCE = 5 V 1.00 0.90 −55°C 0.80 0.70 100 25°C 0.60 0.50 150°C 0.40 0.30 0.20 0.0001 VCE = 10 V TA = 25°C fT, CURRENT−GAIN − BANDWIDTH PRODUCT VBE(on), BASE−EMITTER VOLTAGE (V) 1.20 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 10 0.1 2 TA = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 100 Figure 19. Current − Gain − Bandwidth Product Cib Cob 1 10 100 TA = 25°C 1.6 IC = 10 mA 1.2 IC = 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 20. Capacitances Figure 21. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) 1 0.1 10 IC, COLLECTOR CURRENT (mA) Figure 18. VBE(on) at VCE = 5 V 10 1 VCE = 5 V −0.2 −0.6 −1 qVB, for VBE −1.4 −55°C to 150°C −1.8 −2.2 −2.6 −3 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 22. Base−Emitter Temperature Coefficient www.onsemi.com 6 100 BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC848CDW1 1000 800 700 600 25°C 500 400 −55°C 300 200 100 0.001 0.01 0.1 800 700 25°C 600 500 400 −55°C 300 200 0 0.0001 1 0.001 Figure 23. DC Current Gain at VCE = 5 V Figure 24. DC Current Gain at VCE = 10 V IC/IB = 10 0.14 0.12 0.10 150°C 0.08 25°C 0.06 0.04 −55°C 0.02 0.00 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 0.30 0.25 0.20 0.15 25°C 0.10 0.05 VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) IC/IB = 10 0.9 −55°C 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.0001 0.001 0.01 150°C −55°C 0.00 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 26. VCE at IC/IB = 20 1.1 0.7 1 IC/IB = 20 Figure 25. VCE at IC/IB = 10 0.8 0.1 IC, COLLECTOR CURRENT (A) 0.16 1.0 0.01 IC, COLLECTOR CURRENT (A) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 0.18 VCE = 10 V 100 0 0.0001 0.20 150°C 900 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 VCE = 5 V 150°C 900 0.1 IC, COLLECTOR CURRENT (A) 1.2 IC/IB = 20 1.0 0.8 −55°C 25°C 0.6 0.4 150°C 0.2 0.0 0.0001 Figure 27. VBE(sat) at IC/IB = 10 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 28. VBE(sat) at IC/IB = 20 www.onsemi.com 7 0.1 BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC848CDW1 1000 VCE = 5 V 0.9 fT, CURRENT−GAIN − BANDWIDTH PRODUCT VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 −55°C 0.8 25°C 0.7 0.6 0.5 0.4 150°C 0.3 0.2 0.1 0.0 0.0001 0.001 0.01 0.1 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 29. VBE(on) at VCE = 5 V Figure 30. Current − Gain − Bandwidth Product 2 TA = 25°C C, CAPACITANCE (pF) Cib Cob 1 10 100 IC = 1.6 10 mA TA = 25°C IC = 20 mA 1.2 IC = 50 mA IC = 100 mA 0.8 0.4 0 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 31. Capacitances Figure 32. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) 0.1 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 1 VCE = 10 V TA = 25°C VCE = 5 V −0.2 −0.6 −1 −1.4 qVB, for VBE −1.8 −55°C to 150°C −2.2 −2.6 −3 0.1 1 10 IB, BASE CURRENT (mA) 100 Figure 33. Base−Emitter Temperature Coefficient www.onsemi.com 8 100 BC846BDW1, BC847BDW1, BC848CDW1 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZqJA(t) = r(t) RqJA RqJA = 3285C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0k 10k 100k 1.0M Figure 34. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 35 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. T J(pk) may be calculated from the data in Figure 34. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 -50 -10 -5.0 -2.0 -1.0 TA = 25°C TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 35. Active Region Safe Operating Area www.onsemi.com 9 BC846BDW1, BC847BDW1, BC848CDW1 ORDERING INFORMATION Markings Package Shipping† BC846BDW1T1G 1B SOT−363 (Pb−Free) 3,000 / Tape & Reel SBC846BDW1T1G* 1B SOT−363 (Pb−Free) 3,000 / Tape & Reel BC847BDW1T1G 1F SOT−363 (Pb−Free) 3,000 / Tape & Reel SBC847BDW1T1G* 1F SOT−363 (Pb−Free) 3,000 / Tape & Reel BC847BDW1T3G 1F SOT−363 (Pb−Free) 10,000 / Tape & Reel SBC847BDW1T3G* 1F SOT−363 (Pb−Free) 10,000 / Tape & Reel NSVBC847BDW1T2G* 1F SOT−363 (Pb−Free) 10,000 / Tape & Reel BC847CDW1T1G 1G SOT−363 (Pb−Free) 3,000 / Tape & Reel SBC847CDW1T1G* 1G SOT−363 (Pb−Free) 3,000 / Tape & Reel BC848CDW1T1G 1L SOT−363 (Pb−Free) 3,000 / Tape & Reel NSVBC848CDW1T1G* 1L SOT−363 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 10 BC846BDW1, BC847BDW1, BC848CDW1 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D A D 6 5 GAGE PLANE 4 2 L L2 E1 E 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. H DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b ddd TOP VIEW M A2 C A-B D DETAIL A A 6X ccc C A1 SIDE VIEW C SEATING PLANE c MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 END VIEW STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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