BUH50G
Switch‐mode NPN Silicon
Planar Power Transistor
The BUH50G has an application specific state−of−art die designed
for use in 50 W HALOGEN electronic transformers and switch-mode
applications.
www.onsemi.com
Features
• Improved Efficiency Due to Low Base Drive Requirements:
•
•
•
•
POWER TRANSISTOR
4 AMPERES
800 VOLTS, 50 WATTS
High and Flat DC Current Gain hFE
Fast Switching
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproductible Parametric Distributions
Specified Dynamic Saturation Data
Full Characterization at 125°C
These Devices are Pb−Free and are RoHS Compliant*
COLLECTOR
2,4
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
500
Vdc
Collector−Base Breakdown Voltage
VCBO
800
Vdc
Collector−Emitter Breakdown Voltage
VCES
800
Vdc
Emitter−Base Voltage
VEBO
9
Vdc
IC
4
Adc
ICM
8
Adc
IB
2
Adc
IBM
4
Adc
PD
50
0.4
W
W/_C
TJ, Tstg
−65 to 150
_C
Collector Current
− Continuous
Collector Current
− Peak (Note 1)
Base Current
− Continuous
Base Current
− Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Temperature
3
EMITTER
4
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
BUH50G
AY WW
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristics
RqJC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260
_C
1
BUH50
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 8
1
Device
Package
Shipping
BUH50G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUH50/D
BUH50G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
VCEO(sus)
500
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
100
mAdc
Collector Cutoff Current
@ TC = 25°C
(VCE = Rated VCES, VEB = 0) @ TC = 125°C
ICES
100
1000
mAdc
Emitter−Cutoff Current (VEB = 9 Vdc, IC = 0)
IEBO
100
mAdc
ON CHARACTERISTICS
VBE(sat)
Base−Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.33 Adc)
(IC = 2 Adc, IB = 0.66 Adc) 25°C
(IC = 2 Adc, IB = 0.66 Adc) 100°C
Collector−Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.33 Adc)
@ TC = 25°C
Vdc
VCE(sat)
0.86
0.94
0.85
1.2
1.6
1.5
0.2
0.5
Vdc
(IC = 2 Adc, IB = 0.66 Adc)
@ TC = 25°C
@ TC = 125°C
0.32
0.29
0.6
0.7
(IC = 3 Adc, IB = 1 Adc)
@ TC = 25°C
0.5
1
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25°C
DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
hFE
7
13
5
10
−
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
4
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
50
100
pF
Input Capacitance (VEB = 8 Vdc)
Cib
850
1200
pF
VCE(dsat)
1.75
5
V
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 ms and
3 ms respectively after
rising IB1 reaches
90% of final IB1
IC = 1 A
IB1 = 0.33 A
VCC = 300 V
IC = 2 A
IB1 = 0.66 A
VCC = 300 V
@ 1 ms
@ TC = 25°C
@ TC = 125°C
@ 3 ms
@ TC = 25°C
@ TC = 125°C
0.3
0.5
V
@ 1 ms
@ TC = 25°C
@ TC = 125°C
6
14
V
@ 3 ms
@ TC = 25°C
@ TC = 125°C
0.75
4
V
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc
VCC = 125 Vdc
@ TC = 25°C
ton
95
250
ns
@ TC = 25°C
toff
2.5
3.5
ms
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
VCC = 125 Vdc
@ TC = 25°C
ton
110
250
ns
@ TC = 25°C
toff
0.95
2
ms
IC = 1 Adc, IB1 = 0.3 Adc
IB2 = 0.3 Adc
VCC = 125 Vdc
@ TC = 25°C
ton
100
200
ns
@ TC = 25°C
toff
2.9
3.5
ms
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
Storage Time
Crossover Time
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 1 Adc
Fall Time
Storage Time
Crossover Time
IC = 2 Adc
IB1 = 0.66 Adc
IB2 = 1 Adc
@ TC = 25°C
@ TC = 125°C
tf
80
95
150
ns
@ TC = 25°C
@ TC = 125°C
ts
1.2
1.7
2.5
ms
@ TC = 25°C
@ TC = 125°C
tc
150
180
300
ns
@ TC = 25°C
@ TC = 125°C
tf
90
100
150
ns
@ TC = 25°C
@ TC = 125°C
ts
1.7
2.5
2.75
ms
@ TC = 25°C
@ TC = 125°C
tc
190
220
350
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
BUH50G
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 5 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 1 V
TJ = 125°C
TJ = 25°C
10
TJ = -40°C
1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
TJ = 25°C
10
TJ = -40°C
1
0.01
10
Figure 1. DC Current Gain @ 1 Volt
10
TJ = 25°C
VCE , VOLTAGE (VOLTS)
IC/IB = 3
4A
3A
1
2A
1A
1
TJ = -40°C
TJ = 125°C
0.1
IC = 500 mA
0.1
0.01
TJ = 25°C
0.1
1
IB, BASE CURRENT (mA)
0.01
0.01
10
Figure 3. Collector Saturation Region
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 4. Collector−Emitter Saturation Voltage
10
10
IC/IB = 3
IC/IB = 5
TJ = -40°C
VBE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
10
Figure 2. DC Current Gain @ 5 Volt
10
VCE , VOLTAGE (VOLTS)
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
0.1
TJ = 25°C
1
TJ = 125°C
TJ = -40°C
TJ = 25°C
TJ = 125°C
0.01
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0.1
0.01
10
Figure 5. Collector−Emitter Saturation Voltage
1
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Base−Emitter Saturation Region
www.onsemi.com
3
10
BUH50G
TYPICAL STATIC CHARACTERISTICS
10
10000
C, CAPACITANCE (pF)
VBE , VOLTAGE (VOLTS)
IC/IB = 5
TJ = 125°C
1
TJ = -40°C
TJ = 25°C
0.1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Cib (pF)
1000
TJ = 25°C
f(test) = 1 MHz
100
Cob (pF)
10
1
10
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Base−Emitter Saturation Region
100
Figure 8. Capacitance
TYPICAL SWITCHING CHARACTERISTICS
3000
4000
TJ = 125°C
TJ = 25°C
2500
IBoff = IC/2
VCC = 125 V
PW = 20 ms
TJ = 125°C
TJ = 25°C
3000
IBoff = IC/2
VCC = 125 V
PW = 20 ms
t, TIME (ns)
t, TIME (ns)
2000
IC/IB = 5
1500
2000
IC/IB = 3
1000
1000
500
IC/IB = 3
IC/IB = 5
0
0
1
2
4
3
IC, COLLECTOR CURRENT (AMPS)
5
1
Figure 9. Resistive Switching, ton
5
Figure 10. Resistive Switch Time, toff
300
4000
IC/IB = 3
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
200
t, TIME (ns)
3000
t, TIME (ns)
4
2
3
IC, COLLECTOR CURRENT (AMPS)
2000
tc
100
1000
TJ = 125°C
TJ = 25°C
0
1
tfi
IC/IB = 5
TJ = 125°C
TJ = 25°C
0
2
3
IC, COLLECTOR CURRENT (AMPS)
1
4
3
2
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Storage Time,
tc & tfi @ IC/IB = 3
Figure 11. Inductive Storage Time, tsi
www.onsemi.com
4
4
BUH50G
TYPICAL CHARACTERISTICS
4000
250
TJ = 125°C
TJ = 25°C
tc
t si , STORAGE TIME (μs)
t, TIME (ns)
200
150
100
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
50
0
1
3000
IC = 1 A
2000
1000
IC = 2 A
tfi
0
3
2
IC, COLLECTOR CURRENT (AMPS)
3
4
5
4
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5
6
7
hFE, FORCED GAIN
8
9
10
Figure 14. Inductive Storage Time
150
350
130
IC = 1 A
120
t c , CROSSOVER TIME (ns)
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
140
110
100
90
80
70
TJ = 125°C
TJ = 25°C
60
50
2
4
IC = 1 A
250
150
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC = 2 A
TJ = 125°C
TJ = 25°C
IC = 2 A
50
6
hFE, FORCED GAIN
10
8
3
7
hFE, FORCED GAIN
5
Figure 15. Inductive Fall Time
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL DERATING
0.4
0.2
0
20
40
9
Figure 16. Inductive Crossover Time
1
POWER DERATING FACTOR
t fi , FALL TIME (ns)
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
100
80
120
60
TC, CASE TEMPERATURE (°C)
140
Figure 17. Forward Power Derating
www.onsemi.com
5
160
11
BUH50G
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC −VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 20 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be de−rated when TC > 25°C. Second
breakdown limitations do not de−rate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 20 may be found at any case temperature by using the
appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figure 22. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 21). This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
TYPICAL CHARACTERISTICS
10
VCE
90% IC
IC
9
dyn 1 ms
8
6
0V
tfi
tsi
7
dyn 3 ms
10% IC
10% Vclamp
Vclamp
5
tc
4
IB
90% IB
3
1 ms
2
1
3 ms
0
TIME
Figure 18. Dynamic Saturation Voltage
10
1 ms
5 ms
1
DC
1
2
3
4
TIME
5
6
8
7
5
1 ms
10 ms
0
Figure 19. Inductive Switching Measurements
EXTENDED
SOA
0.1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
90% IB1
IB
GAIN ≥ 3
4
3
2
-5 V
1
0V
0.01
TC ≤ 125°C
LC = 500 mH
-1.5 V
0
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
300
1000
Figure 20. Forward Bias Safe Operating Area
600
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 21. Reverse Bias Safe Operating Area
www.onsemi.com
6
900
BUH50G
TYPICAL CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
3W
100 W
3W
IC PEAK
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
50
W
COMMON
MJE210
150 W
3W
500 mF
IB2
RB2
MTP12N10
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
1 mF
-Voff
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
P(pk)
0.1
0.1
0.05
t1
0.02
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
RqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
10
t, TIME (ms)
Figure 22. Typical Thermal Response (ZqJC(t)) for BUH50
www.onsemi.com
7
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative