CPH3144-TL-E

CPH3144 / CPH3244 Ordering number : ENN8165 CPH3144 / CPH3244 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications ( ) : CPH3144 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 V Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)5 V IC (--)2 A Collector Current Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg (--)5 (--)400 Mounted on a ceramic board (600mm2✕0.8mm) A mA 0.9 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain Conditions Ratings min typ max VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA Output Capacitance Cob VCB=(--)10V, f=1MHz 200 Unit (--)0.1 µA (--)0.1 µA 560 (440)400 (17)12 Marking : CPH3144 : BD, CPH3244 : DP MHz pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004EA TS IM TB-00000973 No.8165-1/4 CPH3144 / CPH3244 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Storage Time min IC=(--)1.5A, IB=(--)75mA IC=(--)1.5A, IB=(--)75mA Collector-to-Base Breakdown Voltage Turn-ON Time Ratings Conditions IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ Unit typ max (--170)160 (--260)240 (--)0.94 (--)1.2 mV V (--30)40 V (--)30 V IE=(--)10µA, IC=0 See specified Test Circuit. (--)5 V ton tstg See specified Test Circuit. (200)350 ns tf See specified Test Circuit. (23)30 ns Fall Time Package Dimensions (45)40 ns Switching Time Test Circuit unit : mm 2150A IB1 PW=20µs D.C.≤1% 2.9 0.4 INPUT 0.6 3 OUTPUT IB2 0.2 0.15 VR RB RL=24Ω 1.6 2.8 0.05 + 470µF + 100µF 0.6 2 1 50Ω 1.9 VBE= --5V 0.7 0.9 0.2 1 : Base 2 : Emitter 3 : Collector VCC=12V IC=20IB1= --20IB2=500mA For PNP, the polarity is reversed. SANYO : CPH3 IC -- VCE --15mA --2 1.8 --10mA --1.4 --8mA --1.2 --6mA --1.0 --4mA --0.8 --0.6 --2mA --0.4 15 1.6 1.4 A 10m A 0m 8mA 2 6mA 4mA 1.2 1.0 0.8 2mA 0.6 0.4 --0.2 0.2 IB=0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V --1.8 0 Collector Current, IC -- A --1.25 --0.50 --25°C --0.75 25°C Ta=75 ° C --1.00 --0.25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT08908 CPH3244 VCE=2V 1.75 --1.50 0.4 IC -- VBE 2.00 CPH3144 VCE= --2V --1.75 0.2 Collector-to-Emitter Voltage, VCE -- V IT08907 IC -- VBE --2.00 IB=0 CPH3244 0 --2.0 1.50 1.25 1.00 0.75 0.50 --25°C --0.2 Ta=75 °C 0 25°C 0 Collector Current, IC -- A mA A 0m -30 - --4 IC -- VCE 2.0 0mA 30m --1.6 mA 40mA mA --5 0 --1.8 Collector Current, IC -- A A 50mA CPH3144 Collector Current, IC -- A --2.0 0.25 0 0 0 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V --1.0 IT08909 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 IT08910 No.8165-2/4 CPH3144 / CPH3244 hFE -- IC 1000 5 Ta=75°C 25°C 2 --25°C 100 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A Gain-Bandwidth Product, f T -- MHz 25°C --25°C 2 7 5 3 2 100 7 3 5 7 --0.1 2 5 7 3 5 7 --1.0 2 2 0.1 3 5 7 CPH3244 VCE=10V 5 3 2 100 7 2 3 5 7 2 0.1 3 5 7 CPH3244 f=1MHz 5 Output Capacitance, Cob -- pF 2 3 IT08914 Cob -- VCB 7 3 2 1.0 Collector Current, IC -- A IT08913 CPH3144 f=1MHz 3 IT08912 f T -- IC 7 5 0.01 3 5 2 1.0 Collector Current, IC -- A Cob -- VCB 7 3 1000 CPH3144 VCE= --10V 2 2 IT08911 Collector Current, IC -- A Output Capacitance, Cob -- pF Ta=75°C 3 7 0.01 3 f T -- IC 1000 5 --0.01 5 100 Gain-Bandwidth Product, f T -- MHz 7 --0.01 CPH3244 VCE=2V 7 DC Current Gain, hFE DC Current Gain, hFE 7 3 hFE -- IC 1000 CPH3144 VCE= --2V 3 2 10 7 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 5 0.1 5 3 --0.1 7 7 = Ta 3 C 5° --2 25 5 7 1.0 2 3 5 7 °C 2 2 10 Collector-to-Base Voltage, VCB -- V 3 5 IT08916 VCE(sat) -- IC CPH3244 IC / IB=20 3 2 5 3 5 CPH3144 IC / IB=20 C 5° 2 IT08915 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 10 --0.1 2 0.1 7 5 75 = Ta 3 2 °C 25 5°C °C --2 0.01 7 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 IT08917 5 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT08918 No.8165-3/4 CPH3144 / CPH3244 VBE(sat) -- IC --1.0 Ta= --25°C 7 75°C 25°C 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 75°C 25°C 5 3 2 3 5 7 2 0.1 3 n io at er op s m s 10 0m C D 10 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 5 7 2 1.0 Collector Current, IC -- A 3 IT08920 PC -- Ta CPH3144 / CPH3244 0.9 CPH3144 / CPH3244 Ta=25°C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm2✕0.8mm) 2 3 7