D45H11G

DATA SHEET www.onsemi.com Complementary Silicon Power Transistors 10 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS D44H Series (NPN), D45HSeries (PNP) COLLECTOR 2, 4 These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. 1 BASE COLLECTOR 2, 4 1 BASE EMITTER 3 Features • • • • NPN PNP Low Collector−Emitter Saturation Voltage Fast Switching Speeds Complementary Pairs Simplifies Designs These Devices are Pb−Free and are RoHS Compliant* Collector−Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Symbol VCEO Value Vdc 60 80 5.0 Vdc IC 10 Adc Collector Current − Peak (Note 1) ICM 20 Adc Total Power Dissipation @ TC = 25°C @ TA = 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg 1 2 D4xHyy = Device Code x = 4 or 5 yy = 8 or 11 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package W −55 to +150 D4xHyyG AYWW 3 70 2.0 °C ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%. THERMAL CHARACTERISTICS Characteristic TO−220 CASE 221A STYLE 1 Unit VEB Collector Current − Continuous MARKING DIAGRAM 4 MAXIMUM RATINGS Rating EMITTER 3 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.8 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 275 °C Device Package Shipping D44H8G TO−220 (Pb−Free) 50 Units/Rail D44H11G TO−220 (Pb−Free) 50 Units/Rail D45H8G TO−220 (Pb−Free) 50 Units/Rail D45H11G TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 August, 2021 − Rev. 14 1 Publication Order Number: D44H/D D44H Series (NPN), D45H Series (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 60 80 − − − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO − − 10 mA 60 40 − − − − − − 1.0 − − 1.5 − − 90 160 − − − − 50 40 − − − − 300 135 − − − − 500 500 − − − − 140 100 − − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0 Adc) D44H8, D45H8 D44H11, D45H11 ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 2.0 Adc) (VCE = 1.0 Vdc, IC = 4.0 Adc) hFE Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1.0 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series D45H Series Ccb pF fT D44H Series D45H Series MHz SWITCHING TIMES Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series D45H Series td + tr D44H Series D45H Series D44H Series D45H Series ns ts ns tf ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 D44H Series (NPN), D45H Series (PNP) 1000 1000 VCE = 1 V 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 125°C −40°C 100 10 0.01 0.1 1 125°C 25°C 100 10 10 −40°C 0.01 Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain 1000 hFE, DC CURRENT GAIN 25°C −40°C 100 0.01 0.1 1 100 −40°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain 0.6 0.30 −40°C 0.25 0.20 25°C 0.15 125°C 0.10 0.05 0.1 25°C IC, COLLECTOR CURRENT (AMPS) VCE(sat) @ IC/IB = 10 0.35 125°C 10 10 SATURATION VOLTAGE (VOLTS) hFE, DC CURRENT GAIN VCE = 5 V 125°C 0.40 SATURATION VOLTAGE (VOLTS) 10 IC, COLLECTOR CURRENT (AMPS) VCE = 5 V 0 1 IC, COLLECTOR CURRENT (AMPS) 1000 10 0.1 1 VCE(sat) @ IC/IB = 10 0.5 0.4 0.3 25°C 125°C 0.2 0.1 0 10 −40°C 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. D44H11 ON−Voltage Figure 6. D45H11 ON−Voltage www.onsemi.com 3 10 D44H Series (NPN), D45H Series (PNP) 1.4 −40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 IC, COLLECTOR CURRENT (AMPS) SATURATION VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.1 1 0.6 25°C 0.4 0.2 0.1 1 100 ms 10 ms TC ≤ 70° C dc DUTY CYCLE ≤ 50% 1.0 ms 0.5 0.3 0.2 D44H/45H8 D44H/45H10,11 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TA TC 3.0 60 2.0 40 TC TA 1.0 20 0 0 0 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Maximum Rated Forward Bias Safe Operating Area 1.0 0.7 0.5 140 160 Figure 10. Power Derating 0.1 0.1 0.02 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.03 0.01 60 100 120 80 T, TEMPERATURE (°C) 0.2 0.2 0.02 40 D = 0.5 0.3 0.07 0.05 10 Figure 8. D45H11 ON−Voltage 1.0 ms 1.0 125°C Figure 7. D44H11 ON−Voltage 10 0.1 0.8 IC, COLLECTOR CURRENT (AMPS) 50 30 20 1.0 −40°C 1.0 IC, COLLECTOR CURRENT (AMPS) 100 5.0 3.0 2.0 VBE(sat) @ IC/IB = 10 1.2 0 10 PD, POWER DISSIPATION (WATTS) SATURATION VOLTAGE (VOLTS) 1.2 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 11. Thermal Response www.onsemi.com 4 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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