EMX1DXV6T5G

EMX1DXV6T1G, EMX1DXV6T5G Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. Features • • • • Reduces Board Space High hFE, 210 −460 (Typical) Low VCE(sat), < 0.5 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com DUAL NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT (6) (5) Tr2 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Tr1 (1) (2) (3) 6 Symbol Total Device Dissipation TA = 25°C Derate above 25°C Max Unit 357 (Note 1) 2.9 (Note 1) mW mW/°C 350 (Note 1) °C/W PD Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) (4) RqJA 1 SOT−563 CASE 463A STYLE 1 MARKING DIAGRAM Symbol Total Device Dissipation TA = 25°C Derate above 25°C Max Unit 500 (Note 1) 4.0 (Note 1) mW mW/°C °C/W 3X MG G PD Thermal Resistance − Junction-to-Ambient RqJA 250 (Note 1) Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 1 3X = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 April, 2016 − Rev. 2 1 Publication Order Number: EMX1DXV6T1/D EMX1DXV6T1G, EMX1DXV6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 60 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 7.0 − − Vdc Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO − − 0.5 mA Emitter-Base Cutoff Current (VEB = 7.0 Vdc, IB = 0) IEBO − − 0.5 mA − − 0.4 120 − 560 fT − 180 − MHz COB − 2.0 − pF Collector-Emitter Saturation Voltage (Note 2) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Vdc hFE Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. ORDERING INFORMATION Package Shipping† EMX1DXV6T1G SOT−563 (Pb−Free) 4000 Units / Tape & Reel EMX1DXV6T5G SOT−563 (Pb−Free) 8000 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 EMX1DXV6T1G, EMX1DXV6T5G TYPICAL ELECTRICAL CHARACTERISTICS 60 1000 160 mA 140 mA 40 120 mA 100 mA 30 80 mA 60 mA 20 TA = - 25°C 100 40 mA 10 0 IB = 20 mA 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 Figure 1. IC − VCE IC = 100 mA 1.8 1 mA 900 TA = 25°C 10 mA 800 1.6 1.4 1.2 1 0.8 0.6 50 mA 100 mA 0.4 0.2 700 600 500 400 TA = 25°C VCE = 5 V 300 200 100 0 0.0001 0.01 0.1 IB, BASE CURRENT (mA) 0.001 1 0 0.2 10 0.5 1 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. On Voltage 20 7 6 Cob, CAPACITANCE (pF) 18 16 14 12 10 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain COLLECTOR VOLTAGE (mV) VCE , COLLECTOR‐EMITTER VOLTAGE (V) 2 Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25°C TA = 75°C DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) TA = 25°C 50 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance www.onsemi.com 3 30 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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