DATA SHEET
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Dual NPN General Purpose
Amplifier Transistor
DUAL NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
EMX2DXV6T5
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT−563 package which is
designed for low power surface mount applications, where board
space is at a premium.
(3)
Features
•
•
•
•
(2)
(1)
Q2
Reduces Board Space
High hFE, 210 −460 (Typical)
Low VCE(sat), < 0.5 V
These are Pb−Free Devices
Q1
(4) (5)
MARKING
DIAGRAM
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
60
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
RqJA
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Max
Unit
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
350 (Note 1)
°C/W
Max
Unit
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
250 (Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
(6)
6
1
SOT−563
CASE 463A
STYLE 2
3R M G
G
1
3R = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
EMX2DXV6T5G
SOT−563
(Pb−Free)
8000/Tape & Reel
EMX2DXV6T1G
SOT−563
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2005
April, 2022 − Rev. 3
1
Publication Order Number:
EMX2DXV6T5/D
EMX2DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
60
−
−
Vdc
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
−
Vdc
Emitter-Base Breakdown Voltage
(IE = 50 mAdc, IE = 0)
V(BR)EBO
7.0
−
−
Vdc
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
−
−
0.5
mA
Emitter-Base Cutoff Current
(VEB = 7.0 Vdc, IB = 0)
IEBO
−
−
0.5
mA
−
−
0.4
120
−
560
fT
−
180
−
MHz
COB
−
2.0
−
pF
Collector-Emitter Saturation Voltage (Note 2)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
DC Current Gain (Note 3)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
Transition Frequency
(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
Vdc
−
EMX2DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
60
1000
160 mA
50
140 mA
40
120 mA
100 mA
30
80 mA
20
60 mA
10
IB = 20 mA
TA = - 25°C
100
40 mA
0
0
2
4
6
VCE, COLLECTOR VOLTAGE (V)
10
0.1
8
1
Figure 1. IC − VCE
900
TA = 25°C
800
COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR‐EMITTER VOLTAGE (V)
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
2
1.5
1
0.5
700
600
500
400
TA = 25°C
VCE = 5 V
300
200
100
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
0
0.2
100
1
5
10
20
40
60
80
100
150 200
Figure 4. On Voltage
7
20
6
Cob, CAPACITANCE (pF)
18
16
14
12
10
0.5
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Cib, INPUT CAPACITANCE (pF)
VCE = 10 V
TA = 25°C
TA = 75°C
DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
TA = 25°C
5
4
3
2
0
1
2
3
1
4
0
10
20
VEB (V)
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
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3
30
40
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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