FAN73611MX-OP

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FAN73611_OP Single-Channel High-Side Gate Drive IC Features  Floating Channel for Bootstrap Operation to +600V  250 mA/500 mA Sourcing/Sinking Current Driving      Capability Common-Mode dv/dt Noise-Canceling Circuit 3.3 V and 5 V Input Logic Compatible Output In Phase with Input Signal Under-Voltage Lockout for VDD and VBS 8-Lead Small Outline Package (SOP) The FAN73611_OP is a monolithic high-side gate drive IC that can drive MOSFETs and IGBTs operating up to +600 V. Fairchild’s high-voltage process and commonmode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8 V (typical) for VBS=15 V. The UVLO circuits prevents malfunction when VDD or VBS is lower than the specified threshold voltage. The output drivers typically source/sink 250 mA/500 mA; respectively, which is suitable for Plasma Display Panel (PDP) application, motor drive inverter, and switching mode power supply applications. Applications 8-SOP  PDP Scan Driver  Motor Driver  Switching-Mode Power Supply (SMPS) Related Application Notes  AN-6076 — Design and Applicaiton Guide of Boostrap Circuit for High-Voltage Gate-Drive IC  AN-9052 — Design Guide for Selection of Bootstrap Components  AN-8102 — Recommendations to Avoid Short Pulse Width Issues in HVIC Gate Driver Applications Description Ordering Information Part Number FAN73611MX_OP (1) Package Operating Temperature Packing Method Description 8 SOP -40°C ~ 125°C Tape & Reel General Application Note: 1. This device passed wave soldering test by JESD22A-111. © 2015 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 www.fairchildsemi.com FAN73611_OP — Single-Channel High-Side Gate Drive IC September 2015 VIN 15V RBOOT DBOOT FAN73611 PWM 1 VDD VB 8 2 IN HO 7 3 NC VS 6 R1 CBOOT C1 4 GND NC 5 L1 R2 C2 D1 VOUT FAN73611 Rev.01 Figure 1. Step-Down (Buck) DC-DC Converter Application Internal Block Diagram 1 UVLO UVLO 2 100K GND PULSE GENERATOR IN NOISE CANCELLER 4 R S R Q Shoot-through current compensated gate driver VDD 8 VB 7 HO 6 VS Pin 3 and 5 are no connection. FAN73611 Rev.02 Figure 2. Functional Block Diagram © 2015 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 www.fairchildsemi.com 2 FAN73611_OP — Single-Channel High-Side Gate Drive IC Typical Application Diagrams FAN73611_OP — Single-Channel High-Side Gate Drive IC Pin Configuration VDD 1 IN 2 NC 3 GND 4 FAN73611 8 VB 7 HO 6 VS 5 NC FAN73611 Rev.01 Figure 3. Pin Configuration (Top View) Pin Definitions Pin # Name Description 1 VDD 2 IN Logic Input for High-Side Gate Driver Output 3 NC No Connection 4 GND 5 NC No Connection 6 VS High-Voltage Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply Supply Voltage Ground © 2015 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 www.fairchildsemi.com 3 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Symbol Characteristics Min. Max. Unit VS High-Side Floating Offset Voltage VB-25 VB+0.3 V VB High-Side Floating Supply Voltage -0.3 625.0 V VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V VDD Low-Side and Logic Supply Voltage -0.3 25.0 V Logic Input Voltage -0.3 VDD+0.3 V Allowable Offset Voltage Slew Rate ± 50 V/ns PD Power Dissipation(2, 3, 4) 0.625 W JA Thermal Resistance 200 C/W TJ Junction Temperature -55 +150 C TSTG Storage Temperature -55 +150 C VIN dVS/dt Notes: 2. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material). 3. Refer to the following standards: JESD51-2: Integrated circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages. 4. Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit VB High-Side Floating Supply Voltage VS+10 VS+20 V VS High-Side Floating Supply Offset Voltage 6-VDD 600 V VS VB V GND VDD V VHO High-Side Output Voltage VIN Logic Input Voltage VDD Supply Voltage 10 20 V Operating Ambient Temperature -40 +125 C TA © 2015 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 www.fairchildsemi.com 4 FAN73611_OP — Single-Channel High-Side Gate Drive IC Absolute Maximum Ratings VBIAS(VDD, VBS) = 15.0 V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Characteristics Test Condition Min. Typ. Max. Unit Power Supply Section IQDD Quiescent VDD Supply Current VIN=0 V or 5 V, CLOAD=1000 pF 80 140 A IPDD Operating VDD Supply Current CLOAD=1000 pF, fIN=20 KHz, RMS value 80 160 A VDDUV+ VBSUV+ VDD and VBS Supply Under-Voltage Positive VDD=Sweep, VBS=Sweep Going Threshold Voltage 7.8 8.8 9.8 V VDDUVVBSUV- VDD and VBS Supply Under-Voltage Negative Going Threshold Voltage 7.3 8.3 9.3 V VDDHYS VBSHYS VDD and VBS Supply Under-Voltage Lockout VDD=Sweep, VBS=Sweep Hysteresis Voltage VDD=Sweep, VBS=Sweep 0.5 ILK Offset Supply Leakage Current VB=VS=600 V IQBS Quiescent VBS Supply Current VIN=0 V or 5 V, CLOAD=1000 pF IPBS Operating VBS Supply Current CLOAD=1000 pF, fIN=20 KHz, RMS Value V 10 A 60 100 A 420 600 A Input Logic Section VIH Logic “1” Input Voltage 2.5 VIL Logic “0” Input Voltage IIN+ Logic Input High Bias Current VIN=5 V IIN- Logic Input Low Bias Current VIN=0 V RIN Input Pull-Down Resistance V 50 60 0.8 V 75 A 2 A 100 K Gate Driver Output Section VOH High Level Output Voltage (VBIAS - VO) No Load 0.1 V VOL Low Level Output Voltage No Load 0.1 V IO+ Output High, Short-Circuit Pulsed Current VHO=0 V, VIN=5 V, PW 10 µs 200 250 mA IO- Output Low, Short-Circuit Pulsed Current VHO=15 V,VIN=0 V, PW 10 µs 400 500 mA VS Allowable Negative VS Pin Voltage for IN Signal Propagation to HO VBS=15 V -9.8 -7.0 V Dynamic Electrical Characteristics VDD=VBS=15 V, CLOAD=1000 pF, and TA=25°C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit ton Turn-On Propagation Delay Time VS=0 V 70 120 170 ns toff Turn-Off Propagation Delay Time VS=0 V 70 120 170 ns tr Turn-On Rise Time 70 140 ns tf Turn-Off Fall Time 30 60 ns . © 2015 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 www.fairchildsemi.com 5 FAN73611_OP — Single-Channel High-Side Gate Drive IC Electrical Characteristics 170 150 150 130 130 tOFF [ns] tON [ns] 170 110 90 70 -40 110 90 -20 0 20 40 60 80 100 70 -40 120 -20 0 Temperature [°C] Figure 5. Turn-On Propagation Delay vs. Temperature 60 120 50 60 80 100 120 40 80 tF [ns] tR [ns] 100 60 30 20 40 10 20 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 20 40 60 80 100 120 Temperature [°C] Figure 7. Turn-On Rise Time vs. Temperature Figure 8. Turn-Off Fall Time vs. Temperature 140 100 120 80 100 IQBS [A] IQDD [A] 40 Figure 6. Turn-Off Propagation Delay vs. Temperature 140 0 -40 20 Temperature [°C] 80 60 40 60 20 40 20 -40 -20 0 20 40 60 80 100 0 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 9. Quiescent VDD Supply Current vs. Temperature Figure 10. Quiescent VBS Supply Current vs. Temperature © 2010 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 -20 www.fairchildsemi.com 6 FAN73611_OP — Single-Channel High-Side Gate Drive IC Typical Characteristics 160 600 140 550 500 100 IPBS [A] IPDD [A] 120 80 60 400 350 40 300 20 0 -40 450 -20 0 20 40 60 80 100 250 -40 120 -20 0 Temperature [°C] 10.0 10.0 9.5 9.5 9.0 9.0 8.5 8.0 7.5 7.5 0 20 40 60 80 100 7.0 -40 120 -20 0 Temperature [°C] 9.5 9.5 9.0 9.0 VBSUV- [V] VBSUV+ [V] 10.0 8.5 8.0 7.5 7.5 20 40 60 80 100 7.0 -40 120 Temperature [°C] 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 Temperature [°C] Figure 15. VBS UVLO+ vs. Temperature Figure 16. VBS UVLO- vs. Temperature © 2010 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 120 8.5 8.0 0 100 Figure 14. VDD UVLO- vs. Temperature 10.0 -20 80 Temperature [°C] Figure 13. VDD UVLO+ vs. Temperature 7.0 -40 60 8.5 8.0 -20 40 Figure 12. Operating VBS Supply Current vs. Temperature VDDUV- [V] VDDUV+ [V] Figure 11. Operating VDD Supply Current vs. Temperature 7.0 -40 20 Temperature [°C] www.fairchildsemi.com 7 FAN73611_OP — Single-Channel High-Side Gate Drive IC Typical Characteristics (Continued) 3.0 3.0 2.5 VIL [V] VIH [V] 2.5 2.0 2.0 1.5 1.5 1.0 1.0 -40 -20 0 20 40 60 80 100 0.5 -40 120 Temperature [°C] 0 40 60 80 100 120 Figure 18. Logic LOW Input Voltage vs. Temperature 75 140 65 120 RIN [K] 55 45 100 80 35 25 -40 -20 0 20 40 60 80 100 60 -40 120 -20 0 Temperature [°C] 40 60 80 100 120 Figure 20. Input Pull-Down Resistance vs. Temperature 100 80 80 VOL [mV] 100 60 40 20 0 -40 20 Temperature [°C] Figure 19. Logic HIGH Input Bias Current vs. Temperature VOH [mV] 20 Temperature [°C] Figure 17. Logic HIGH Input Voltage vs. Temperature IIN+ [A] -20 60 40 20 -20 0 20 40 60 80 100 0 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 21. High-Level Output Voltage vs. Temperature Figure 22. Low-Level Output Voltage vs. Temperature © 2010 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 -20 www.fairchildsemi.com 8 FAN73611_OP — Single-Channel High-Side Gate Drive IC Typical Characteristics (Continued) -4 -8 -6 -9 -8 VS [V] VS [V] -7 -10 -10 -11 -12 -12 -14 -13 -40 -20 0 20 40 60 80 100 -16 10 120 12 Temperature [°C] 170 170 150 150 130 130 110 90 18 20 110 90 12 14 16 18 70 10 20 12 Supply Voltage [V] 14 16 18 20 Supply Voltage [V] Figure 25. Turn-On Propagation Delay vs. Supply Voltage Figure 26. Turn-Off Propagation Delay vs. Supply Voltage 140 60 120 50 tF [ns] 100 tR [ns] 16 Figure 24. Allowable Negative VS Voltage vs. Supply Voltage tOFF [ns] tON [ns] Figure 23. Allowable Negative VS Voltage vs. Temperature 70 10 14 Supply Voltage [V] 80 40 30 60 20 40 10 20 0 10 12 14 16 18 0 10 20 Figure 27. Turn-On Rise Time vs. Supply Voltage 14 16 18 20 Figure 28. Turn-Off Fall Time vs. Supply Voltage © 2010 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 12 Supply Voltage [V] Supply Voltage [V] www.fairchildsemi.com 9 FAN73611_OP — Single-Channel High-Side Gate Drive IC Typical Characteristics (Continued) 140 100 80 100 IQBS [A] IQDD [A] 120 80 40 60 20 40 20 10 60 12 14 16 18 0 10 20 12 Supply Voltage [V] Figure 29. Quiescent VDD Supply Current vs. Supply Voltage 600 140 550 IPBS [A] IPDD [A] 120 100 80 60 18 20 500 450 400 350 40 300 20 12 14 16 18 250 10 20 Supply Voltage [V] 12 14 16 18 20 Supply Voltage [V] Figure 31. Operating VDD Supply Current vs. Supply Voltage Figure 32. Operating VBS Supply Current vs. Supply Voltage © 2010 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 16 Figure 30. Quiescent VBS Supply Current vs. Supply Voltage 160 0 10 14 Supply Voltage [V] www.fairchildsemi.com 10 FAN73611_OP — Single-Channel High-Side Gate Drive IC Typical Characteristics (Continued) 15V 10µF 10µF VDD 10nF 0.1µF 50% VB 15V tON VS GND 50% IN FAN73611 tR tOFF 90% 90% 1nF tR HO IN OUT 10% 10% FAN73611 Rev.02 FAN73611 Rev.02 Figure 33. Switching Time Test Circuit and Waveform Definitions 15V UF4007 0.1µF VDD 10µF 0.1µF VB GND VS GND -Vs FAN73611 1000pF IN OUTPUT MONITOR HO FAN73611 Rev.03 Figure 34. Floating Supply Voltage Transient Test © 2015 Fairchild Semiconductor Corporation FAN73611_OP • Rev. 1.0 www.fairchildsemi.com 11 FAN73611_OP — Single-Channel High-Side Gate Drive IC Switching Time Definitions C 0.35 5.12 4.72 8 A 5 B 6.30 5.70 1.75 0.65 4.15 3.75 5.60 1.27 1 4 1.27 PIN #1 ID 0.25 M C B A TOP VIEW 1.85 1.35 1.75 1.25 C B C 0.51 0.31 (8X) 0.10 C 0.25 0.10 OPTION A BEVEL EDGE BEVEL 8° 4° SEATING PLANE DETAIL "B" SCALE 2:1 0.25 0.15 OPTION B NON-BEVEL EDGE NOTES: UNLESS OTHERWISED SPECIFIED R0.10 A. 0.25 B. C 1.04 C SIDE VIEW FRONT VIEW GAGE PLANE LAND PATTERN RECOMMENDATION 0.80 0.30 D. E. F. THIS PACKAGE CONFORMS TO JEDEC MS-012 VARIATION A EXCEPT WHERE NOTED. ALL DIMENSIONS ARE IN MILLIMETERS OUT OF JEDEC STANDARD VALUE DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. LAND PATTERN AS PER IPC SOIC127P600X175-8M DRAWING FILENAME: MKT-M08Brev2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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