FAN7842M

DATA SHEET www.onsemi.com High- and Low-Side Gate Driver SOIC8 (8−SOP) CASE 751EG FAN7842 Description The FAN7842, a monolithic high and low side gate drive IC, which can drive MOSFETs and IGBTs that operate up to +200 V. onsemi’s high−voltage process and common−mode noise canceling technique provide stable operation of the high−side driver under high−dv/dt noise circumstances. An advanced level−shift circuit allows high−side gate driver operation up to VS = −9.8 V (typical) for VBS = 15 V. The input logic level is compatible with standard TTL−series logic gates. The UVLO circuits for both channels prevent malfunction when VCC and VBS are lower than the specified threshold voltage. Output driver current (source/sink) is typically 350 mA/650 mA, respectively. MARKING DIAGRAM 7842 ALYW 7842 A L YW = Specific Device Code = Assembly Site = Wafer Lot Number = Assembly Start Week Features • Floating Channels Designed for Bootstrap Operation to +200 V • Typically 350 mA/650 mA Sourcing/Sinking Current Driving • • • • • • • • Capability for Both Channels Common−Mode dv/dt Noise Canceling Circuit Extended Allowable Negative VS Swing to −9.8 V for Signal Propagation at VCC = VBS = 15 V VCC & VBS Supply Range from 10 V to 20 V UVLO Functions for Both Channels TTL Compatible Input Logic Threshold Levels Matched Propagation Delay Below 50 ns Output In−phase with Input Signal This Device is Pb−Free, Halide Free and is RoHS Compliant ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. Applications • Battery Based Motor Applications (E−bike, Power Tool) • Telecom DC−DC Converter Related Resources • AN−6076 − Design and Application Guide of Bootstrap Circuit • • for High−Voltage Gate−Drive IC AN−9052 − Design Guide for Selection of Bootstrap Components AN−8102 − Recommendations to Avoid Short Pulse Width Issues in HVIC Gate Driver Applications © Semiconductor Components Industries, LLC, 2006 July, 2022 − Rev. 2 1 Publication Order Number: FAN7842/D FAN7842 TYPICAL APPLICATION CIRCUIT 600 V 15 V RBOOT DBOOT 1 VCC VB 8 Q1 HIN 2 HIN HO 7 LIN 3 LIN VS 6 4 COM LO 5 R1 R2 CBOOT Q2 C1 R3 Load R4 Figure 1. Application Circuit for Half−Bridge INTERNAL BLOCK DIAGRAM 8 VB 7 HO 6 VS 1 VCC 5 LO 4 COM UVLO HS(ON/OFF) 500K NOISE CANCELLER RR S Q DRIVER 2 PULSE GENERATOR HIN UVLO DELAY 3 DRIVER LS(ON/OFF) LIN 500K Figure 2. Functional Block Diagram www.onsemi.com 2 FAN7842 PIN ASSIGNMENTS VCC 1 8 VB HIN 2 7 HO LIN 3 6 VS COM 4 5 LO Figure 3. Pin Configuration (Top View) PIN DEFINITIONS Name Description VCC Low−Side Supply Voltage HIN Logic Input for High−Side Gate Driver Output LIN Logic Input for Low−Side Gate Driver Output COM Logic Ground and Low−Side Driver Return LO Low−Side Driver Output VS High−Voltage Floating Supply Return HO High−Side Driver Output VB High−Side Floating Supply www.onsemi.com 3 FAN7842 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VS High−side Offset Voltage VB High−side Floating Supply Voltage Min Max Unit VB − 25 VB + 0.3 V −0.3 225 VS − 0.3 VB + 0.3 VHO High−side Floating Output Voltage HO VCC Low−side and Logic Fixed Supply Voltage −0.3 25 VLO Low−side Output Voltage LO −0.3 VCC + 0.3 VIN Logic Input Voltage (HIN, LIN) −0.3 VCC + 0.3 VCC − 25 VCC + 0.3 Allowable Offset Voltage Slew Rate − 50 V/ns Power Dissipation − 0.625 W qJA Thermal Resistance, Junction−to−ambient − 200 °C/W TJ Junction Temperature − 150 °C TSTG Storage Temperature − 150 °C COM Logic Ground dVS/dt PD (Note 1) (Note 2) (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR−4 glass epoxy material). 2. Refer to the following standards: JESD51−2: Integral circuits thermal test method environmental conditions − natural convection JESD51−3: Low effective thermal conductivity test board for leaded surface mount packages 3. Do not exceed PD under any circumstances. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V VB High−side Floating Supply Voltage VS + 10 VS + 20 VS High−side Floating Supply Offset Voltage 6 − VCC 200 VHO High−side (HO) Output Voltage VS VB VLO Low−side (LO) Output Voltage COM VCC VIN Logic Input Voltage (HIN, LIN) COM VCC VCC Low−side Supply Voltage 10 20 Ambient Temperature −40 125 TA °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 4 FAN7842 ELECTRICAL CHARACTERISTICS (VBIAS (VCC, VBS) = 15.0 V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to VS and COM and are applicable to the respective outputs HO and LO.) Symbol Characteristics Test Condition Min Typ Max Unit V VCCUV+ VBSUV+ VCC and VBS Supply Under−voltage Positive Going Threshold 8.2 9.2 10.0 VCCUV− VBSUV− VCC and VBS Supply Under−voltage Negative Going Threshold 7.6 8.7 9.6 VCCUVH VBSUVH VCC Supply Under−voltage Lockout Hysteresis − 0.6 − ILK Offset Supply Leakage Current VB = VS = 200 V − − 50 IQBS Quiescent VBS Supply Current VIN = 0 V or 5 V − 45 120 IQCC Quiescent VCC Supply Current VIN = 0 V or 5 V − 70 180 IPBS Operating VBS Supply Current fIN = 20 kHz, rms value − − 600 IPCC Operating VCC Supply Current fIN = 20 kHz, rms value − − 600 VIH Logic “1” Input Voltage 2.9 − − VIL Logic “0” Input Voltage − − 0.8 VOH High−level Output Voltage, VBIAS−VO − − 1.0 VOL Low−level Output Voltage, VO − − 0.6 IIN+ Logic “1” Input Bias Current VIN = 5 V − 10 20 IIN− Logic “0” Input Bias Current VIN = 0 V − 1.0 2.0 IO+ Output High Short−circuit Pulsed Current VO = 0 V, VIN = 5 V with PW < 10 ms 250 350 − IO− Output Low Short−circuit Pulsed Current VO = 15 V, VIN = 0 V with PW < 10 ms 500 650 − VS Allowable Negative VS Pin Voltage for HIN Signal Propagation to HO − −9.8 −7.0 IO = 20 mA mA mA V mA mA V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DYNAMIC ELECTRICAL CHARACTERISTICS (VBIAS (VCC, VBS) = 15.0 V, VS = COM, CL = 1000 pF and, TA = 25°C, unless otherwise specified.) Symbol Characteristics Test Condition Min Typ Max Unit ton Turn−on Propagation Delay VS = 0 V 100 170 300 ns toff Turn−off Propagation Delay VS = 0 V or 200 V (Note 4) 100 200 300 ns tr Turn−on Rise Time 20 60 140 ns tf Turn−off Fall Time − 30 80 ns Delay Matching, HS & LS Turn−on/off − − 50 ns MT 4. This parameter guaranteed by design. www.onsemi.com 5 FAN7842 TYPICAL CHARACTERISTICS 250 300 VCC = VBS COM = 0 V CL = 1 nF TA = 25°C 200 Turn−On Propagation Delay (ns) Turn−On Propagation Delay (ns) 300 High−Side 150 Low−Side 100 10 12 14 16 18 275 250 225 High−Side 200 175 Low−Side 150 125 100 75 50 −40 20 VCC = VBS = 15 V COM = 0 V CL = 1 nF −20 0 Supply Voltage (V) 300 VCC = VBS COM = 0 V CL = 1 nF TA = 25°C 260 240 High−Side 200 Low−Side 160 140 120 100 10 12 14 16 18 275 64 Turn−On Raising Time (ns) Turn−On Raising Time (ns) 56 54 Low−Side High−Side 46 44 11 12 13 14 15 16 High−Side Low−Side 200 175 150 −20 0 20 40 60 80 100 120 Figure 7. Turn−Off Propagation Delay vs. Temperature VCC = VBS COM = 0 V CL = 1 nF TA = 25°C 60 58 42 10 120 Temperature (°C) 62 48 100 225 125 −40 20 Figure 6. Turn−Off Propagation Delay vs. Supply Voltage 50 80 VCC = VBS = 15 V COM = 0 V CL = 1 nF 250 Supply Voltage (V) 52 60 Figure 5. Turn−On Propagation Delay vs. Temperature Turn−Off Propagation Delay (ns) Turn−Off Propagation Delay (ns) 300 280 180 40 Temperature (°C) Figure 4. Turn−On Propagation Delay vs. Supply Voltage 220 20 17 18 19 20 80 VCC = VBS = 15 V 75 70 COM = 0 V 65 CL = 1 nF 60 55 50 Low−Side 45 40 High−Side 35 30 25 20 15 10 5 0 −40 −20 0 20 40 60 80 100 Supply Voltage (V) Temperature (°C) Figure 8. Turn−On Rising Time vs. Supply Voltage Figure 9. Turn−On Rising Time vs. Temperature www.onsemi.com 6 120 FAN7842 TYPICAL CHARACTERISTICS (CONTINUED) 50 VCC = VBS COM = 0 V CL = 1 nF TA = 25°C 32 30 28 45 Turn−Off Falling Time (ns) Turn−Off Falling Time (ns) 34 High−Side 26 24 Low−Side 22 20 18 40 VCC = VBS = 15 V COM = 0 V CL = 1 nF 35 High−Side 30 Low−Side 25 20 15 16 10 11 12 13 14 15 16 17 18 19 10 −40 20 −20 0 Supply Voltage (V) 20 40 60 80 100 120 Temperature (°C) Figure 10. Turn−Off Falling Time vs. Supply Voltage Figure 11. Turn−Off Falling Time vs. Temperature 440 VCC = VBS COM = 0 V LO = HO = 0 V TA = 25°C 500 450 Output Sourcing Current (mA) Output Sourcing Current (mA) 600 550 400 350 High−Side 300 Low−Side 250 200 150 100 10 VCC = VBS = 15 V COM = 0 V LO = HO = 0 V 420 400 380 High−Side 360 Low−Side 340 320 300 280 12 14 16 18 20 −40 −20 0 Supply Voltage (V) 40 60 80 100 120 Temperature (°C) Figure 12. Output Sourcing Current vs. Supply Voltage Figure 13. Output Sourcing Current vs. Temperature 900 850 VCC = VBS COM = 0 V LO = VCC, HO = VB TA = 25°C 800 700 Low−Side 600 Output Sinking Current (mA) Output Sinking Current (mA) 20 High−Side 500 400 300 10 VCC = VBS = 15 V COM = 0 V LO = VCC, HO = VB 800 750 700 High−Side 650 Low−Side 600 550 500 12 14 16 18 −20 20 Supply Voltage (V) 0 20 40 60 80 100 120 Temperature (°C) Figure 14. Output Sinking Current vs. Supply Voltage Figure 15. Output Sinking Current vs. Temperature www.onsemi.com 7 FAN7842 −4 Allowable Negative VS Voltage for Signal Propagation to High−Side (V) Allowable Negative VS Voltage for Signal Propagation to High−Side (V) TYPICAL CHARACTERISTICS (CONTINUED) VCC = VBS COM = 0 V TA = 25°C −6 −8 −10 −12 −14 −16 −18 10 12 14 16 18 20 −9.0 −9.2 VCC = VBS = 15 V COM = 0 V −9.4 −9.6 −9.8 −10.0 −10.2 −10.4 −40 −20 0 Supply Voltage (V) 40 60 80 100 120 Temperature (°C) Figure 16. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Supply Voltage Figure 17. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Temperature 95 100 VBS = 15 V COM = 0 V HIN = LIN = 0 V TA = 25°C VCC = VBS = 15 V COM = 0 V HIN = LIN = 0 V 90 85 80 IQCC (mA) 80 IQCC (mA) 20 60 40 75 70 65 60 55 20 50 45 −40 0 0 5 10 15 20 −20 0 Supply Voltage (V) 20 40 60 80 100 120 Temperature (°C) Figure 18. IQCC vs. Supply Voltage Figure 19. IQCC vs. Temperature 80 60 VCC = 15 V COM = 0 V HIN = LIN = 0 V 50 48 50 IQBS (mA) IQBS (mA) 52 VCC = 15 V COM = 0 V HIN = LIN = 0 V TA = 25°C 70 40 30 46 44 42 40 20 38 10 36 0 0 5 10 15 20 −40 Supply Voltage (V) −20 0 20 40 60 80 Temperature (°C) Figure 20. IQBS vs. Supply Voltage Figure 21. IQBS vs. Temperature www.onsemi.com 8 100 120 FAN7842 TYPICAL CHARACTERISTICS (CONTINUED) 0.60 0.7 VCC = VBS COM = 0 V HIN = LIN = 5 V IL = 20 mA TA = 25°C 0.5 0.50 VOH (V) VOH (V) 0.6 0.55 High−Side 0.4 VCC = VBS = 15 V COM = 0 V HIN = LIN = 5 V IL = 20 mA 0.45 Low−Side 0.40 High−Side Low−Side 0.35 0.3 0.30 0.2 10 12 14 16 18 0.25 −40 20 −20 0 20 Supply Voltage (V) 0.22 0.20 0.18 VOL (V) VOL (V) 0.16 80 100 120 Figure 23. High−Level Output Voltage vs. Temperature VCC = VBS COM = 0 V HIN = LIN = 0 V IL = 20 mA TA = 25°C 0.17 60 Temperature (°C) Figure 22. High−Level Output Voltage vs. Supply Voltage 0.18 40 0.15 High−Side VCC = VBS = 15 V COM = 0 V HIN = LIN = 0 V IL = 20 mA High−Side 0.16 Low−Side 0.14 0.14 0.12 Low−Side 0.13 0.10 0.12 10 12 14 16 18 20 −40 −20 0 20 Supply Voltage (V) Figure 24. Low−Level Output Voltage vs. Supply Voltage 60 80 100 120 Figure 25. Low−Level Output Voltage vs. Temperature 16 40 VCC = VBS COM = 0 V IN = VCC or IN = 0 V TA = 25°C 30 HIN = LIN = 5 V 14 IN+/IN− (mA) 35 IN+/IN− (mA) 40 Temperature (°C) 25 IN+ 20 15 12 LIN 10 HIN 8 10 6 5 IN− 0 0 5 10 15 4 −40 20 Supply Voltage (V) −20 0 20 40 60 80 100 Temperature (°C) Figure 26. Input Bias Current vs. Supply Voltage Figure 27. Input Bias Current vs. Temperature www.onsemi.com 9 120 FAN7842 10.0 10.0 9.8 9.8 9.6 9.6 VSBUV+/VSBUV+ (V) VCCUV+/VCCUV+ (V) TYPICAL CHARACTERISTICS (CONTINUED) VCCUV+ 9.4 9.2 9.0 VCCUV− 8.8 8.6 9.2 9.0 8.6 8.4 8.2 8.2 −20 0 20 40 60 80 100 8.0 −40 120 Temperature (°C) Input Logic Threshold Voltage (V) VB−to−COM = 650 V ILK (mA) 4 3 2 1 0 20 40 60 0 20 40 60 80 100 120 Figure 29. VBS UVLO Threshold Voltage vs. Temperature 5 −20 −20 Temperature (°C) Figure 28. VCC UVLO Threshold Voltage vs. Temperature 0 −40 VSBUV− 8.8 8.4 8.0 −40 VSBUV+ 9.4 80 100 120 3.4 3.2 3.0 VIN (LIN) 2.8 2.6 2.4 VIH (HIN) 2.2 2.0 VIL (LIN) 1.8 1.6 1.4 1.2 VIL (HIN) 1.0 0.8 0.6 0.4 0.2 0.0 −40 −20 0 20 Temperature (°C) VCC = VBS = 15 V COM = 0 V 40 60 80 100 Temperature (°C) Figure 30. VB to COM Leakage Current vs. Temperature Figure 31. Input Logic Threshold Voltage vs. Temperature www.onsemi.com 10 120 FAN7842 TYPICAL CHARACTERISTICS (CONTINUED) 15 V 15 V 100 nF 10 mF 1 VCC 4 COM VB 8 10 mF VS 6 100 nF 1 nF HIN 2 HIN HO 7 LIN 3 LIN LO 5 1 nF Figure 32. Switching Time Test Circuit Figure 33. Input / Output Timing Diagram Figure 34. Switching Time Waveform Definition Figure 35. Delay Matching Waveform Definition ORDERING INFORMATION Part Number FAN7842MX (Note 5) Package Operating Temperature Range Shipping† SOIC8 (8−SOP) (Pb−Free, Halide Free) −40°C~125°C 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 5. These devices passed wave soldering test by JESD22A−111. www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EG ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13741G SOIC8 DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative