FCA20N60-F109

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Description Features • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications SuperFET® MOSFET is ON Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Solar Inverter • AC-DC Power Supply D G G D S TO-3PN S MOSFET Maximum Ratings TC = 25 Symbol o C unless otherwise noted. FCA20N60 / FCA20N60-F109 600 Parameter VDSS Drain to Source Voltage VGSS Gate-Soure voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy Unit V ±30 - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed V 20 A 12.5 (Note 1) 60 A (Note 2) 690 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL - Derate Above 25oC 208 W 1.67 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCA20N60 / FCA20N60_F109 RθJC Thermal Resistance, Junction to Case, Max. 0.6 RθJA Thermal Resistance, Junction to Ambient, Max. 41.7 ©2008 Semiconductor Components Industries, LLC. October-2017,Rev. 3 Unit o C/W Publication Order Number: FCA20N60/D FCA20N60 — N-Channel SuperFET® MOSFET FCA20N60 Part Number FCA20N60 Top Mark FCA20N60 Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units FCA20N60-F109 FCA20N60 TO-3PN Tube N/A N/A 30 units Electrical Characteristics Symbol TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC 600 - - V ID = 250 μA, VGS = 0 V, TJ = 150oC - 650 - V ID = 250 μA, Referenced to 25oC - 0.6 - V/oC VGS = 0 V, ID = 20 A - 700 - V VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 0.15 0.19 Ω gFS Forward Transconductance VDS = 40 V, ID = 10 A - 17 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 2370 3080 pF - 1280 1665 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 95 - Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 65 85 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 165 - pF VDS = 480 V, ID = 20 A, VGS = 10 V - 75 98 nC - 13.5 18 nC - 36 - nC Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) - 62 135 ns - 140 290 ns - 230 470 ns - 65 140 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 20 A - - 1.4 V trr Reverse Recovery Time - 530 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 20 A, dIF/dt = 100 A/μs - 10.5 - μC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 20 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FCA20N60 — N-Channel SuperFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 2 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 o 150 C 1 10 o 25 C o -55 C 0 10 * Notes : 1. 250μs Pulse Test * Note 1. VDS = 40V o 2. 250μs Pulse Test 2. TC = 25 C -1 0 10 2 1 10 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 0.3 VGS = 10V 0.2 VGS = 20V 0.1 1 10 o 150 C 0 10 o 25 C * Notes : 1. VGS = 0V 2. 250μs Pulse Test o * Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 7000 Coss 5000 4000 * Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz 3000 2000 Crss 1000 0 -1 10 0 10 1.4 1.6 VDS = 100V 1 10 VGS, Gate-Source Voltage [V] Crss = Cgd 6000 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 8000 1.0 Figure 6. Gate Charge Characteristics 10000 9000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 10 10 IDR , Reverse Drain Current [A] RDS(ON) [Ω], 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.4 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 20A 0 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 60 70 80 FCA20N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 20 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 20 ID, Drain Current [A] ID, Drain Current [A] 100 us 1 ms 1 10 10 ms DC 0 10 * Notes : o 1. TC = 25 C -1 10 15 10 5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 D = 0 .5 10 * N o te s : 0 .2 -1 o 1 . Z θ J C (t) = 0 .6 C /W M a x. 0 .1 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ JC (t) 0 .0 5 PDM 0 .0 2 t1 0 .0 1 θJC o ZθJC Thermal Response Z(t),(t), Thermal Response[ C/W] 10 10 -2 10 t2 s in g le p u ls e -5 10 -4 125 o VDS, Drain-Source Voltage [V] 10 -3 10 -2 10 -1 t 1 ,t1S, q u a re W a v ePulse P u ls Duration e D u ra tio[sec] n [s e c ] Rectangular www.onsemi.com 4 10 0 10 1 150 FCA20N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics (Continued) FCA20N60 — N-Channel SuperFET® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FCA20N60 — N-Channel SuperFET® MOSFET DUT ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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