FCP400N80Z

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP400N80Z N-Channel SuperFET® II MOSFET 800 V, 14 A, 400 m Features Description • • • • • • • SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. Typ. RDS(on) = 340 m Ultra Low Gate Charge (Typ. Qg = 43 nC) Low Eoss (Typ. 4.1 uJ @ 400 V) Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability Applications • AC-DC Power Supply • LED Lighting D G GD S TO-220 S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM EAS IAR EAR Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt dv/dt PD Parameter TL (f >1 Hz) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 25oC) (TC = - Derate Above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Power Dissipation TJ, TSTG - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed FCP400N80Z 800 ±20 ±30 14 8.9 33 339 2.2 1.95 100 20 195 1.56 -55 to +150 Unit V W W/oC oC 300 oC FCP400N80Z Unit V A A mJ A mJ V/ns Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. 0.64 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2015 Fairchild Semiconductor Corporation FCP400N80Z Rev. 1.0 1 oC/W www.fairchildsemi.com FCP400N80Z — N-Channel SuperFET® II MOSFET December 2015 Part Number FCP400N80Z Top Mark FCP400N80Z Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 800 - - V ID = 1 mA, Referenced to 25 C - 0.8 - V/oC VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125oC VGS = ±20 V, VDS = 0 V - - 25 250 ±10 VGS = VDS, ID = 1.1 mA VGS = 10 V, ID = 5.5 A VDS = 20 V, ID = 5.5 A 2.5 - - 0.34 12 4.5 0.4 - V  S - 1770 51 0.5 28 138 43 8.6 17 2.3 2350 70 56 - pF pF pF pF pF nC nC nC  - 20 12 51 2.6 50 34 112 15 ns ns ns ns - 395 7.4 14 33 1.2 - A A V ns C Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 1 mA, TJ = 25C o A A On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance Dynamic Characteristics Ciss Coss Crss Coss Coss(eff.) Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance VDS = 100 V, VGS = 0 V, f = 1 MHz VDS = 480 V, VGS = 0 V, f = 1 MHz VDS = 0 V to 480 V, VGS = 0 V VDS = 640 V, ID = 11 A, VGS = 10 V (Note 4) f = 1 MHz Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 400 V, ID = 11 A, VGS = 10 V, Rg = 4.7  (Note 4) Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 11 A Reverse Recovery Time VGS = 0 V, ISD = 11 A, dIF/dt = 100 A/s Reverse Recovery Charge Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.2 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD  14 A, di/dt  200 A/s, VDD  BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. ©2015 Fairchild Semiconductor Corporation FCP400N80Z Rev. 1.0 2 www.fairchildsemi.com FCP400N80Z — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2015 Fairchild Semiconductor Corporation FCP400N80Z Rev. 1.0 3 www.fairchildsemi.com FCP400N80Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Eoss vs. Drain to Source Voltage ©2015 Fairchild Semiconductor Corporation FCP400N80Z Rev. 1.0 4 www.fairchildsemi.com FCP400N80Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCP400N80Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve PDM t1 ©2015 Fairchild Semiconductor Corporation FCP400N80Z Rev. 1.0 5 t2 www.fairchildsemi.com FCP400N80Z — N-Channel SuperFET® II MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VGS Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2015 Fairchild Semiconductor Corporation FCP400N80Z Rev. 1.0 6 www.fairchildsemi.com FCP400N80Z — N-Channel SuperFET® II MOSFET Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2015 Fairchild Semiconductor Corporation FCP400N80Z Rev. 1.0 7 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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